| X射线吸收谱对Ga0.946Mn0.054As薄膜中缺陷的研究 |
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| 引用本文： | 乔媛媛,肖正国,曹先存,郭浩民,史同飞,王玉琦.X射线吸收谱对Ga0.946Mn0.054As薄膜中缺陷的研究[J].物理学报,2011,60(1):16101-016101. |
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| 作者姓名： | 乔媛媛 肖正国 曹先存 郭浩民 史同飞 王玉琦 |
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| 作者单位： | 中国科学院固体物理研究所材料物理重点实验室,合肥 230031 |
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| 基金项目： | 中科院知识创新工程青年人才领域前沿项目基金(084N541121)资助的课题. |
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| 摘 要： | 采用低温分子束外延法(LT-MBE)制备出Ga0.946Mn0.054As稀磁半导体(DMS)薄膜.通过X射线吸收谱(XAS)研究影响Ga0.946Mn0.054As薄膜性质的主要缺陷Mn间隙原子(MnI)和As反位原子(AsGa).实验结果表明,在较低生长温度(TS=200℃)下Ga0.946Mn0.054
关键词：
0.946Mn0.054As稀磁半导体')" href="#">Ga0.946Mn0.054As稀磁半导体
X射线吸收谱
As反位缺陷
Mn间隙原子
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| 关 键 词： | Ga0.946Mn0.054As稀磁半导体 X射线吸收谱 As反位缺陷 Mn间隙原子 |
| 收稿时间： | 3/4/2010 12:00:00 AM |
The study of defects in Ga0.946 Mn0.054 As by X-ray absorption spectra |
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| Qiao Yuan-Yuan,Xiao Zheng-Guo,Cao Xian-Cun,Guo Hao-Min,Shi Tong-Fei,Wang Yu-Qi.The study of defects in Ga0.946 Mn0.054 As by X-ray absorption spectra[J].Acta Physica Sinica,2011,60(1):16101-016101. |
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| Authors: | Qiao Yuan-Yuan Xiao Zheng-Guo Cao Xian-Cun Guo Hao-Min Shi Tong-Fei Wang Yu-Qi |
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| Institution: | Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031,China;Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031,China;Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031,China;Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031,China;Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031,China;Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031,China |
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| Abstract: | The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (MnI) in the Ga0.946Mn0.054As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0.054As grown at lower temperature (TS=200℃) is mainly AsGa, but at TS>230℃ MnI is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove MnI out of the Ga0.946Mn0.054As lattice, and the highest Curie temperature (TC=130 K) is reached. Moreover, it is indicated that the LT-annealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving MnI defects to fill up the holes left by AsGa. |
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| Keywords: | Ga0 946Mn0 054As diluted magnetic semiconductor X-ray absorption spectra As antisites Mn interstitials |
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