|
|||||
|
|
| GaMnAs薄膜洛伦兹振子模型参数提取以及材料缺陷分析 | |
| 引用本文： | 蔡娟露,程兴华,钟玉杰,何志刚,史同飞,龚敏,石瑞英.GaMnAs薄膜洛伦兹振子模型参数提取以及材料缺陷分析[J].光散射学报,2011,23(3):238-243. |
| 作者姓名： | 蔡娟露 程兴华 钟玉杰 何志刚 史同飞 龚敏 石瑞英 |
| 作者单位： | 1. 四川大学物理科学与技术学院微电子学系,成都,610064 2. 微电子技术四川省重点实验室,成都,610064 3. 中科院固体物理所 |
| 基金项目： | 国家自然科学基金(60676052) |
| 摘 要： | 利用改进的遗传算法从GaMnAs外延薄膜的远红外反射光谱中提取了GaMnAs薄膜的洛伦兹振子模型参数,发现GaAs掺入Mn后,ωTO向低频方向移动,ωLO基本保持不变,ε∞和εs均减小,γ有很大变化.并通过XRD以及近红外谱发现Mn的掺入会引入缺陷,这种缺陷会影响晶格质量,导致γ发生很大变化. |
| 关 键 词： | GaMnAs 遗传算法 洛伦兹振子模型 缺陷 XRD 红外光谱 |
| 收稿时间： | 2011/4/29 |
The Parameter extraction of GaMnAs Lorentz Oscillator Model and Defect Analysis |
|
| CAI Juan-lu,CHENG Xing-hua,ZHONG Yu-jie,HE Zhi-gang,SHI Tong-fei,Gong Ming,SHI Rui-ying.The Parameter extraction of GaMnAs Lorentz Oscillator Model and Defect Analysis[J].Chinese Journal of Light Scattering,2011,23(3):238-243. | |
| Authors: | CAI Juan-lu CHENG Xing-hua ZHONG Yu-jie HE Zhi-gang SHI Tong-fei Gong Ming SHI Rui-ying |
| Institution: | CAI Juan-lu,CHENG Xing-hua,ZHONG Yu-jie,HE Zhi-gang,SHI Tong-fei,Gong Ming,SHI Rui-ying(1.Department of Microelectronics,Sichuan University,Chengdu 610064,China,2.Key Lab of Microelectronics technology of Sichuan province,China) |
| Abstract: | The revised genetic algorithm was successfully used to extract the Lorentz oscillator model parameters of GaMnAs from far-infrared reflectance spectra.Comparing the Lorentz oscillator model parameters of GaMnAs with those of GaAs,it was found that ωTO moved to lower frequencies,ε∞ and εs decreased,γ changed greatly,but the ωLo was almost not changed.Analysis on XRD and near-infrared spectrum of GaMnAs shows that introduced defects by Mn incorporation affects the quality of lattice and leads γ changed dramatically. |
| Keywords: | GaMnAs genetic algorithm lorentz oscillator model defect XRD infrared spectroscopy |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |