离子束溅射沉积Ir膜真空紫外反射特性研究

根据吸收材料基底上单层金属膜数学计算模型,对不同基片上各种厚度的Ir膜真空紫外反射率进行了优化计算.采用离子束溅射沉积技术,在石英、K9玻璃和Si基片上沉积了不同厚度的Ir膜,研究了基片、表面厚度、离子束能量及镀后热处理对Ir膜反射率的影响,在波长120 nm处获得了近30％正入射反射率.     

真空紫外波段铝反射膜制备

为制备出在130～210nm波段具有良好光谱性能的铝反射膜,优化设计了铝反射镜中铝层和保护层氟化镁的厚度,理论确定铝层和氟化镁保护层最佳厚度分别为80nm和33nm。采用热舟蒸发工艺,在BK7基片上制备了Al反射膜样品,获得了130～210nm波长范围内反射率均大于80%的金属铝膜。研究了铝层沉积速率和紫外辐照处理对薄膜性能的影响,并考察了铝膜光谱性能的时效性。结果表明铝层沉积速率越快,制备的铝膜反射率越高;合理地存放铝膜元件,可以长时间内保持铝膜的光谱性能。适当的紫外辐照处理能进一步提高铝膜在真空紫外波段的反射率。     

真空紫外铝+氟化镁膜偏振特性的研究

研究了铝＋氟化镁膜在真空紫外波段的偏振特性。理论上数值模拟计算了铝＋氟化镁膜在真空紫外波段的反射率及其与入射平面平行和垂直两方面的分量，分析了铝＋氟化镁膜反射率的两分量随入射条件和氟化镁膜厚度的变化规律，在此基础上研究了铝＋氟化镁膜的偏振特性，并与单层铝膜的相应特性作了比较，以氟化锂堆作偏振器，在Seya-Namioka真空紫外反射率计上实验研究了铝＋氟化镁膜的偏振特性。研究结果表明，铝＋氟化镁膜的偏振特性由于受到氟化镁厚度的调制，存在反射率的垂直分量小于平行分量的情形，从而使铝＋氟化镁膜的消光比在非正入射的条件下接近1。理论计算结果与实验结果一致。     

K9和石英玻璃基片上Au膜真空紫外反射特性研究

采用离子束溅射法,分别在经过不同前期清洗方法处理过的K9及石英玻璃光学基片上,选择不同的镀膜参量,镀制了多种厚度的Au膜。对镀制的Au膜在真空紫外波段较宽波长范围内的反射率进行了连续测量。测试结果表明:辅助离子源的使用方式、Au膜厚度对反射镜的反射率有重大影响。基片材料、镀前基片表面清洗工艺等对反射率也有一定影响。采用镀前离子轰击,可显著提高Au膜反射率及膜与基底的粘合力;获得最高反射率时的最佳膜厚与基片材料、镀膜工艺密切相关。对经过离子清洗的石英基片,膜厚在30 nm左右反射率最高;比较而言,石英基片可获得更高的反射率;辅助离子源的使用还显著影响获得最高反射率时对应的最佳膜厚值,且对K9基片的影响更显著。     

利用等效层的消偏振宽带减反膜设计

分析了倾斜入射条件下导致光学薄膜产生偏振的原因,针对不同偏振态的等效导纳与等效相位进行了分析,并计算了对称膜层在45°入射条件下不同偏振态的等效折射率与等效相位厚度,采用等效层方法设计了光学性能良好的600～900 nm波段消偏振宽带减反膜。最后利用电子束蒸发技术制备了薄膜样品,样品的光谱性能完全能够满足使用要求。其中在600～900 nm波段范围内,平均反射率均小于1．38%,反射率的偏振度均低于0．89%。另外,通过对其理论及实验光学性能、角度敏感性、膜层厚度误差敏感性等方面的分析结果可知,对称膜层组合法是设计消除倾斜入射下宽带减反膜偏振效应的一种行之有效的方法。     

4.48 nm正入射软X射线激光用Cr/C多层膜高反射镜的研制

针对4.48nm类镍钽软X射线激光及其应用实验,设计制备了工作于这一波长的近正入射多层膜高反射镜。选择Cr/C为制备4.48nm高反射多层膜的材料对,通过优化设计,确定了多层膜的周期、周期数以及两种材料的厚度比。模拟了多层膜非理想界面对高反射多层膜性能的影响。采用直流磁控溅射方法在超光滑硅基片上实现了200周期Cr/C多层膜高反射镜的制备。利用X射线衍射仪测量了多层膜结构,在德国BessyⅡ同步辐射上测量了在工作波长处多层膜反射率,测量的峰值反射率达7.5%。对衍射仪测量的掠入射反射曲线和同步辐射测量的反射率曲线分别进行拟合,得到的粗糙度和厚度比的结果相近。测试结果表明,所制备的Cr/C多层膜样品结构良好,在指定工作波长处有较高的反射峰,达到了设计要求。     

光纤激光器光学膜设计与制备

针对激光在传输过程中的光能损失,本文根据光学薄膜理论,设计制备了减反射膜和抗激光的高反射膜,并对激光膜的镀膜材料、膜系设计、沉积工艺及离子辅助沉积等参数进行了深入研究.研究结果表明,制备的减反膜的反射率＜O.2%,激光以25°～65°入射时高反射膜的反射率＞99.7%.对50μm光纤和K9玻璃镀膜前后的输出功率测试显示...     

Cu/Ti超晶格薄膜的强紫外反射性能研究

采用直流磁控溅射方法制备了一维二组元Cu/Ti周期超晶格金属薄膜 ,研究了基片温度、膜周期数、基片取向与紫外反射的关系。当基片加热温度为 470℃时 ,在硅 (10 0 )晶面上生长的 30层Cu/Ti膜 ,层间膜厚控制在1∶3、膜总厚度控制为 30 0nm时 ,所制备的超晶格薄膜在 5°入射角下对 2 0 0nm的紫外光 ,其反射率可高达 90 %。     

4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备

在4H-SiC基底上设计并制备了Al2O3SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性.利用编程计算得到Al2O2和SiO2的最优物理膜厚分别为42.0 nm和96.1 nm以及参考波长λ=280 nm处最小反射率为0.09%.由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率.实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715.用电子束蒸发法在4H-SiC基底上淀积Al2O3SiO2双层膜,厚度分别为42 nm和96 nm.SEM截面图表明淀积的薄膜和基底间具有较强的附着力.实测反射率极小值为0.33%,对应λ=276 nm,与理论结果吻合较好.与传统SiO2单层膜相比,Al2O3SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景.     

卫星激光通信滤光膜的研制

为满足卫星激光通信中超高速数据传输的特殊要求,采用电子束和离子辅助沉积技术,制备了532nm、632nm和1 064nm波长处高反射,808nm和1 550nm处高透射的多波段滤光膜.选取了H4和SiO2作为高低折射率材料,通过对膜系设计曲线的不断优化,减少了灵敏层的个数,得到了相对易于制备的膜系结构;采用电子束加热蒸发方法并加以离子辅助沉积系统制备薄膜,采用光控与晶控同时监控的方法控制膜厚;通过不断调整工艺,提高了薄膜的抗激光损伤能力,减小了膜厚控制误差,提高了透射波段的透过率及反射波段的反射率,最终得到了光谱性能较好的滤光膜.该薄膜能够承受雨淋、盐雾、高低温等环境测试,满足使用要求.     

吸收层特性和异质结界面电荷对12.5 μm长波HgCdTe光伏探测器响应率的影响研究

研究了12.5 μm长波HgCdTe探测器的吸收层厚度和异质结界面电荷对器件光响应率的影响.分析了吸收层厚度与吸收长度、扩散长度之间的联系,获得了设计最佳吸收层厚度的经验公式.研究结果显示入射光波长超过截止波长时,响应率随吸收层厚度增加单调增加,并逐渐饱和.响应率峰值对应的波长随吸收层厚度增加,有向长波偏移的趋势.最佳吸收层厚度值随少子寿命或入射光波长的增大而增大.同时,研究了衬底、钝化层与HgCdTe材料之间异质界面电荷对光响应率的影响,发现正的界面电荷在衬底异质结界面处形成诱导pn结,对响应率影响显著 关键词： 长波HgCdTe器件 光伏型红外探测器 光响应率 少子寿命     

Tunable surface-plasmon-resonance wavelength of silver island films

This paper experimentally and theoretically investigates the effect of the underlayer medium on tuning of the surface plasmon resonance (SPR) wavelength of silver island films,and the effect of substrate temperature on the morphologies and optical properties of the films.From the absorption spectra of single Ag with various thickness and overcoated (Ag/TiO 2) films deposited on glass substrates at various substrate temperatures by RF magnetron sputtering,we demonstrate that the surface plasmon resonance wavelength can be made tunable by changing the underlayer medium,the thickness of metal layer and the substrate temperature.By varying substrate temperatures,the interparticle coupling effects on plasmon resonances of nanosilver particles enhance as the spacing between the particles reduces.When the substrate temperature is up to 500 C,the absorption peak decreases sharply and shifts to shorter wavelength side due to the severe coalescence between silver islands in the film.     

Predictive estimation of vacuum ultraviolet emission intensity in a low-pressure inductively coupled hydrogen plasma based on the branching ratio technique

Vacuum ultraviolet (VUV) emission has recently attracted attention in low pressure processing plasmas because of the possibility of high-energy photon damages on the substrates. To quantify the VUV induced damages during the plasma processes, it is need to use of a VUV spectrometer equipped with vacuum systems not readily available in industries. In this work, therefore, we report a simple method to estimate the VUV emission intensity of hydrogen plasmas utilizing a conventional visible spectrometer widely used in plasma processes. From the measurement of hydrogen emission spectra in the visible wavelength region, the VUV emission line (Lyman-β) was calculated using the branching ratio technique and enabled the estimation of Lyman-α emission intensity based on the Boltzmann relation with given plasma parameters. In addition, it was found that the method could also predict the VUV emission intensity for high density hydrogen plasma cases by considering the self-absorption effect by hydrogen atoms.     

同步辐射真空紫外(VUV)区中的团簇物理

本文概述了同步辐射在团簇物理研究中的应用,讨论主要集中在真空紫外(VUV)区。重点说明其实验方法、研究进展状况和实验设计的一般考虑;并选择介绍德国DESY的团簇物理实验站CLULU;最后,对未来的发展方向提出作者的一些观点。     

Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier

Growth and nucleation behavior of Ir films grown by atomic layer deposition (ALD) on different interfacial layers such as SiO₂, surface-treated TaN, and 3-nm-thick TaN were investigated. To grow Ir thin film by ALD, (1,5-cyclooctadiene) (ethylcyclopentadienyl) iridium (Ir(EtCp)(COD)) and oxygen were employed as the metalorganic precursor and reactant, respectively. To obtain optimal deposition conditions, the deposition temperature was varied from 240 to 420 °C and the number of deposition cycles was changed from 150 to 300. The Ir film grown on the 3-nm-thick TaN surface showed the smoothest and most uniform layer for all the deposition cycles, whereas poor nucleation and three-dimensional island-type growth of the Ir layer were observed on Si, SiO₂, and surface-treated TaN after fewer number of deposition cycles. The uniformity of the Ir film layer was maintained for all the different substrates up to 300 deposition cycles. Therefore we suggest that the growth behavior of the Ir layer on different interface layer is related to the chemical bonding pattern of the substrate film or interface layer, resulting in better understand the growth mechanism of Ir layer as a copper diffusion barrier. The ALD-grown Ir films show the preferential direction of (1 1 1) for all the reflections, which indicates the absence of IrO₂ in metallic Ir.     

Iridium/silicon multilayers for extreme ultraviolet applications in the 20-35 nm wavelength range

We have developed an Ir/Si multilayer for extreme ultraviolet (EUV) applications. Normal incidence reflectance measurements of a prototype film tuned to 30 nm wavelength show superior performance relative to a conventional Mo/Si multilayer structure; we also find good stability over time. Transmission electron microscopy and electron dispersive x-ray spectroscopy have been used to examine the microstructure and interface properties of this system: we find amorphous Si layers and polycrystalline Ir layers, with asymmetric interlayer regions of mixed composition. Potential applications of Ir/Si multilayers include instrumentation for solar physics and laboratory EUV beam manipulation.     

L12 phase formation and giant exchange anisotropy in Mn3Ir/Co–Fe bilayers

The degree of order S of Mn–Ir layers and the exchange anisotropy of Mn–Ir/Co–Fe bilayers were investigated for various chemical compositions of Mn–Ir layers, underlayer materials, and underlayer thicknesses. It was found that: (1) The compositional range over which L1₂-phase Mn₃Ir could be formed is 22–32 at% Ir and giant exchange anisotropy is obtained in this range. (2) Ru is favorable as an underlayer material for avoiding interdiffusion with the Mn–Ir layer during deposition on the temperature elevated substrate. (3) The underlayer thickness could be reduced to 5 nm while maintaining a giant exchange anisotropy in excess of 1 erg/cm².     

Extremely low-loss hollow core waveguide for VUV light

A new type of an extremely low-loss optical waveguide is proposed. In the vacuum-ultra-violet (VUV) region (wavelength less than 300 nm) most solid-state materials have a refractive index less than unity due to plasma vibration of electrons. The energy of VUV light is confined within the hollow core due to the smaller n_r than unity of the cladding material of the hollow core waveguide. Typical expected loss for 50 nm-wavelength VUV light of a 0.1 mm hollow-core waveguide is on the order of 0.05 dB/km.     

提高极紫外光谱纯度的多层膜设计及制备

极紫外光刻是实现22nm技术节点的候选技术。极紫外光刻使用的是波长为13.5nm的极紫外光,但在160～240nm波段,极紫外光刻中的激光等离子体光源光谱强度、光刻胶敏感度以及多层膜的反射率均比较高,光刻胶在此波段的曝光会降低光刻系统的光刻质量。从理论和实验两方面验证了在传统Mo/Si多层膜上镀制SiC单层膜可对极紫外光刻中的带外波段进行有效抑制。通过使用X射线衍射仪、椭偏仪以及真空紫外(VUV)分光光度计来确定薄膜厚度、薄膜的光学常数以及多层膜的反射率,设计并制备了[Mo/Si]40SiC多层膜。结果表明,在极紫外波段的反射率减少5%的前提下,带外波段的反射率减少到原来的1/5。