HTS磁体性能实验研究

系统介绍 HTS实验磁体的液氮、液氦实验和固氮浸渍实验 ,获得 78.6～ 4 .2 K不同温度下磁体的伏～安特性曲线和 Ic～ T曲线 ,在很宽的范围内研究了 HTS实验磁体性能。     

制冷机冷却型超导磁体杜瓦的研制

介绍了带制冷机冷却的超导磁体系统杜瓦的设计、制作及实验结果分析。杜瓦采用 4 0 K、10 K双制冷屏结构 ,其室温磁场孔径为 75 mm,长 4 15 m m。试验结果为 :液氦蒸发率为 0 .6 9升 /天 (在 2 0天连续试验期内 ) ,优于合同规定的指标 (2 .4升 /天 )。双制冷屏由一台双级 G- M制冷机冷却 ,工作时一级冷屏温度为 35 K,二级冷屏温度为 7.0 K。磁体系统的磁场强度为 3T,满足了用户的使用要求     

基于电阻应变片的低温应变测量方法研究

超导磁体在降温及通电情况下将受到热及电磁应力,拟采用电阻应变片测量CFETR CS模型线圈在降温及通电过程中产生的应变。为了修正温度和磁场对电阻应变片的影响,采用惠斯通电桥法补偿应变片由于温度及磁场引起的偏差,并实际测量了316L不锈钢样品从室温降到液氦温度的热收缩值,测量结果与ITER数据库数值进行了对比、分析,并研究了磁场对应变测量信号的影响,结果表明惠斯通电桥法能够修正温度和磁场对应变测量的影响,并达到测量的精度要求,可以用于CFETR CS模型线圈的应变测量。     

Fe1.01Se0.4Te0.6单晶的超导电性研究

本文采用自助溶剂法生长得到Fe1.01Se0.4Te0.6单晶样品,超导零电阻温度Tczero=11.0 K,部分样品经400℃进行48小时退火之后,超导零电阻温度变为Tczero=7.0K.分析表明退火后样品的Fe含量变大,超导电性被部分抑制.通过磁场下电阻率-温度曲线的实验测量,用WHH(Werthamer-Helfand-Hohenberg)方法估算得到退火前后样品在0K附近的上临界场分别为83.2T和61.3T.上临界场μ0Hc2(T)随温度变化曲线在0T附近向高温方向上翘,说明样品具有"二流体"行为.直流磁化曲线在40K和120K分别出现向下弯曲,40K处的变化可能对应于过量Fe的自旋冻结.应变测量结果显示样品在117K时应变值发生一个突变,变化量约为晶格参数的0.06%,显示样品发生一个结构相变.因此,120K处的磁化下降对应于样品从四方相到正交相的结构转变.     

基于掺铒光纤的微型光纤法布里-珀罗干涉传感器

提出了一种化学腐蚀掺铒光纤制作微型光纤法布里-珀罗干涉传感器的方法。通过对掺铒光纤进行化学腐蚀,形成凹槽,再与单模光纤直接熔接制作而成。实验制作的微型法布里-珀罗干涉传感器干涉条纹光滑,对比度达到15dB。对该微型光纤法布里珀罗干涉腔进行了应变和温度传感实验。实验结果表明,在0-600με￡内,波谷移动随应变改变的灵敏度达到1．7pm／με,线性度为0．9998,从73～23℃,波谷移动随温度改变的灵敏度3．9pm／℃,线性度为0．9982。该方法制作的微型光纤法布里-珀罗传感器具有操作简单,一次成型,制作成本低的优点。     

相分离Gd_5Ge_4合金温度依赖的多重磁转变行为研究

系统研究了Gd5Ge4合金的结构和磁特性的温度依赖关系,结果表明,实验样品Gd5Ge4室温下具有典型的pnma空间群正交结构,通过测量该合金场冷(FC)和零场冷(ZFC)下的热磁曲线以及交流磁化率随温度变化曲线,结合不同温度下的磁滞回线(M～H),观察到当外加磁场为1T时,体系在几个特征温度T1=10K、T2=26K、T3=127K和T4=235K附近磁化强度出现了异常变化,反映在这些特征温度下的体系出现了复杂的多重磁转变行为,初步分析了在各特征温度附近发生的磁相变的属性,探讨了相分离中铁磁成分与温度的关联,其结果对扩展包括强关联锰氧化物在内的相分离体系物理机理的理解具有一定的参考价值和借鉴意义。     

荧光粉CaWO4：Eu3+中WO2-4与Eu3+间的能量转递*

通过高温固相法分别制备了CaWO4和CaWO4：1%Eu3+样品.测量了样品不同温度(10-300 K)的荧光光谱、荧光衰减曲线和时间分辨荧光光谱.样品的荧光光谱表明：在240 nm紫外光激发下,两个样品在430 nm处都展现出来源于WO2?4的蓝色发射;样品CaWO4：Eu3+的Eu3+(5D0→7F1,2,3,4)的特征发射则归属于WO2?4到Eu3+间的能量传递.由样品室温(300 K)荧光衰减曲线发现：纯CaWO4的荧光寿命为8.85μs, Eu3+掺杂之后WO2?4的荧光寿命缩短至6.27μs,这从另一方面证明了WO2?4与Eu3+间能量传递的存在.由荧光寿命得到T =300 K时, CaWO4：1%Eu3+中WO2?4与Eu3+间的能量传递效率(ηET)为29.2%,能量传递速率(ωET)为4.65×104 s?1.通过时间分辨荧光光谱,获得了从WO2?4到Eu3+之间的能量传递的时间演变过程,当温度由10 K增加到300 K时,能量传递出现的时间单调变小.测试了不同温度(10-300 K)对CaWO4：Eu3+的荧光寿命的影响,发现在10-50 K时, Eu3+的荧光寿命增加,但温度超过50 K时发生猝灭,荧光寿命开始下降;WO2?4的荧光寿命则是随着温度的升高逐渐缩短.     

荧光光纤光栅传感特性的实验研究

在载氢掺铒光纤上写入Bragg光纤光栅，得到新型光子学器件-荧光光纤光栅.分别对其Bragg波长（λB）及荧光寿命（τ）的温度（T）及应变（ε）响应特性进行了实验研究，并且给出了λB和τ分别关于（T，ε）的拟合方程.实验结果表明：荧光光纤光栅的λB对T和ε的响应具备一般Bragg光纤光栅的优良特性，测得温度灵敏度为11.1pm /℃，应变灵敏度为1.19pm/με；而且τ对T和ε的响应也具有良好的线性关系，温度灵敏度为0.59 μs/℃，应变灵敏度为6.16 ns/με.实验结论为解决温度应力交叉敏感、实现温度应力的同时监测提供一条新颖的途径.     

Ag掺杂对La0.7Ca0.2Sr0.1MnO3室温磁电阻效应的增强

本文采用固相反应法制备了一系列La07Ca0.2Sr0.1MnO3/Ag复合物样品,分别测量了样品的XRD图、电阻-温度曲线、磁化强度-温度曲线及磁电阻随温度、磁场的变化关系.实验结果表明,金属Ag颗粒均匀地填隙在La0.7Ca0.2Sr01MnO3晶界处,没有与母体La0.7Ca02Sr0.1MnO3发生反应.该系列样品的金属-绝缘体转变温度Tp及居里温度Tc与LCSMO的Tp及Tp保持一致,没有受到Ag填隙原子的影响.值得注意的是室温下的磁电阻效应显著增强,当Ag掺杂量为25%时,磁电阻效应分别达到23%(316 K,0.3 T)和40%(303 K,2.5 T).这是因为填隙在La07Ca0.2Sr01MnO3晶界上的Ag有效地改善了晶粒边界,使得磁电阻效应增强.     

赝能隙导致的YBa2(Cu1-xMx)3O7-δ(M=Co,Zn)薄膜的输运性质异常

报道了两类典型元素替代的超导Y123相体系-YBa2(Cu1-xCox)3O7-δ(x=0.01,0.02)和YBa2(Cu1-yZny)3O7-δ(y=0.005,0.010)薄膜的电阻率-温度特性(ρ(T))和Hall效应(RH (T)).研究表明,Co掺杂的Y123相体系十分类似于氧欠掺杂的情况,对Co掺杂的薄膜样品,由电阻率-温度特性定义的赝能隙打开的温度T*分别为193和225K.而Zn掺杂的样品没有观察到赝能隙打开对电阻率-温度特性的影响.由Hall效应的测量和Hall角(cotθH)定义了另一个特征温度T 0,介于Tc与T*之间,这一特征温度与核磁共振(NMR)给出的赝能隙打开温度相近,说明可能源于电子自旋自由度上的能隙打开.在室温到Tc范围内,电阻率-温度特性和Hall效应分别定义了两类不同的转变温度(T*和T 0),可能分别源于电子电荷和自旋通道上的赝能隙的打开,预示着电荷和自旋自由度分别进入某种基态.     

Kerr effect in liquid helium at temperatures below the superfluid transition

The electro-optical Kerr effect induced by a slowly varying electric field in liquid helium at temperatures below the lambda point is investigated. The Kerr constant of liquid helium is measured to be (1.43+/-0.02(stat)+/-0.04(sys)) x 10(-20) (cm/V)(2) at T=1.5 K. Within experimental uncertainty, the Kerr constant is independent of temperature in the range T=1.5 K to 2.17 K, which implies that the Kerr constant of the superfluid component of liquid helium is the same as that of normal liquid helium. Pair and higher correlations of He atoms in the liquid phase account for about 23% of the measured Kerr constant. Liquid nitrogen was used to test the experimental setup; the result for the liquid nitrogen Kerr constant is (4.38+/-0.15) x 10(-18) (cm/V)(2). Kerr effect can be used as a noncontact technique for measuring the magnitude and mapping out the distribution of electric fields inside these cryogenic insulants.     

温度和应变对光纤折射率的影响

采用迈克尔逊（Ｍｉｃｈｅｌｓｏｎ）光纤白光干涉系统，通过测量随着温度或应变改变而变化的光程，给出了单模光纤有效折射率的温度和应变相关特性。对于ＳＭＦ－２８型单模光纤，测得折射率温度系数和应变温度系数在波长为１３００ｎｍ处分别为０．７６２×１０－５／℃及－０．１３３２×１０－６／με；在波长１５５０ｎｍ处则为０．８１１×１０－５／℃及－０．１６４９×１０－６／με。并与几种不同光纤相应的数据进行了比较。     

An AC magnetic susceptibility bridge and cryostat for the temperature range 2–300 K

A mutual inductance bridge to measure low frequency magnetic susceptibilities of magnetic materials has been constructed. Salient features of the bridge, which uses a variable mutual inductance simulated using operational amplifiers, the cryostat and the coil assembly are described in this paper. The apparatus has been employed for accurate measurement of superconducting transition temperatures and for sensitive detection of magnetic ordering transitions in liquid helium and liquid nitrogen temperature ranges respectively. The bridge has been calibrated to determine the static susceptibility of magnetic materials as a function of temperature.     

超导腔垂直测量系统中的磁屏蔽

简要介绍空间磁场对纯铌超导加速腔性能的影响,以及在超导腔垂直测量时对空间磁场进行有效屏蔽的方法.由于多数磁性材料对应力和温度变化非常敏感,而且国内缺乏在低温下相关磁屏蔽材料性能的数据,为此对8种国产铁磁和软磁材料在低温下的初始磁导率进行了测量,并给出了相应的测试结果.最后介绍了作者研制的1.3GHz超导腔垂直测量低温恒温器内置式磁屏蔽装置及其性能.     

High resolution temperature insensitive interrogation technique for FBG sensors

In this letter, we propose a high resolution temperature insensitive interrogation technique for FBG sensors where one FBG acts as an edge filter to interrogate a separate FBG sensor. A high resolution of better than 5 με in strain measurement range from 0 to 1100 με and the best resolution of better than 1 με were verified by experiments. An error of only ±2.2 με is achieved over a temperature range from 15 to 50 °C, indicating that this strain interrogation technique is temperature insensitive. Using an altered system configuration, the temperature was also measured simultaneously with a resolution better than 0.2 °C.     

Mechanical tests of the conduit tubes of a conductor for the Toroidal winding of the International Thermonuclear Experimental Reactor (ITER)

Extremely stringent requirements, which include the impact toughness at the liquid-helium temperature, are imposed on the material of the conduit tubes for International Thermonuclear Experimental Reactor (ITER) Toroidal Field (TF) conductors. Modified 316LN-IG stainless steel is recommended as the conduit tube material. Steel 316LN-IG tube samples (both full-size samples and sub-sized samples) are subjected to mechanical tests at various stages of the process of conductor production: in the as-recieved state and after compacting, preliminary elongation by 2.5% at room temperature, and annealing at 650°C for 200 h in a pure helium gas atmosphere. The tests are carried out at room, liquid nitrogen, and liquid helium temperatures and satisfy the standards of the American Society of Mechanical Engineers (ASME and ASTM). The results of sub-size and full-size samples testing show that the last one gives more representative results to qualify the weld joints in liquid nitrogen. When the temperature decreases or the strain increases, the magnetization of the samples increases, especially in the weld area. Strain measurements with an extensometer demonstrate that the intracrystal processes occurring at the liquid-helium temperature can lead to a significant change in the local load, up to complete unloading in a deformation zone. Unusual local serrated deformation is observed with an extensometer installed in the weld area during tests in liquid helium: this deformation is the result of compressive jumps opposite to the loading direction.     

Indigenous design and fabrication of a 6.5 T superconducting magnet and a magnetotransport measurement set-up

A low-cost apparatus for measuring Hall effect and magnetoresistance is designed and built indigenously. This includes a 6.5 T superconducting magnet and a variable temperature sample holder assembly. A superinsulated liquid helium dewar with a low liquid helium boil-off rate is chosen as the low-temperature bath for doing magnetotransport measurements. A pair of high-T _c superconducting leads for energizing the magnet reduces the liquid helium consumption further and makes it economically beneficial, especially for laboratories with limited budget. The performance of the apparatus is tested over a wide range of temperatures (4.2 to 300 K) and fields up to 6.5 T. Reproducible magnetotransport data are obtained with excellent temperature and field stability.      

Channeling study of boron implanted silicon: Liquid nitrogen temperature implantation

Silicon samples have been boron implanted at 150 keV at liquid nitrogen temperature to a dose of 3.6 × 10¹⁵/cm². This dose rendered the implanted layer amorphous as viewed by helium ion backscattering. Four kinds of room temperature measurements were made on the same set of samples as a function of the isochronal annealing temperature. The measurements made were the determination of the substitutional boron content by the channeling technique using the B¹¹(p, α) nuclear reaction, observation of the disorder by helium ion backscattering, determination of the carrier concentration by van der Pauw Hall measurements, and the sheet resistivity by four point probe measurements. These measurements are compared with results from samples implanted at room temperature. The carrier concentration correlates well with the substitutional boron content for both room temperature and liquid nitrogen temperature implantations. Following annealing temperatures in the 600 to 800°C range, a much larger percentage of the boron lies on substitutional lattice sites, and therefore the carrier concentration is larger, if the implantation is done at liquid nitrogen temperature rather than at room temperature. Following liquid nitrogen temperature implantation, reverse annealing is observed from 600 to 800°C in the substitutional boron content, carrier concentration and sheet resistivity. The boron is more than 90 per cent substitutional after annealing to 1100°C for both the room temperature and liquid nitrogen temperature implantations. The low temperature implantation produced a buried amorphous layer, and this layer was observed to regrow from both the surface and substrate sides at approximately equal rates.     

HT-7U超导模型线圈电阻应变测量

针对 HT- 7U超导模型线圈实验中应变测量的特点 ,介绍了低温强磁场特殊条件下电阻应变测量方法 ,从测量电路、应变片粘贴布置方案、应变计算公式、测量结果等方面进行了具体分析。