Solar cells based on the poly(N-vinylcarbazole):porphyrin: tris(8-hydroxyquinolinato) aluminium blend system

Organic solar cells based on poly(N-vinylcarbazole)(PVK):porphyrin:tris(8-hydroxyquinolinato) aluminium(Alq3) blend p-n junction systems have been fabricated in this work.The roles of the different components in the blend system and of the amount of porphyrin have been investigated.The 5,10,15,20-tetraphenylporphyrin(TPP) and 5,10,15,20-tetra(o-chloro)phenylporphyrinato-copper(CuTClPP) are used in the solar cells.The results show that TPP is better than CuTClPP in enhancing the performance of PVK:Alq3 solar cells.When the weight ratio of PVK:TPP:Alq3 is 1:1.5:1,the best performance of solar cell is obtained.The open circuit voltage(V oc) is 0.87 V,and the short circuit current(J sc) is 17.5 μA·cm 2.In the ternary bulk hereojunction system,the device may be regarded as a cascade of three devices of PVK:TPP,TPP:Alq3 and PVK:Alq3.PVK,TPP and Alq3 can improve the hole mobility,light absorption intensity and electron mobility of the ternary bulk hereojunction system,respectively.     

Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy

The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm~2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm~2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.     

Thermal stability and electrical transport properties of Ge/Sn-codoped single crystalline β-Zn_4Sb_3 prepared by the Sn-flux method

This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_(4.4)Sb_3 Ge_xSn_3(x = 0–0.15). The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability.Compared with the polycrystalline Ge-substituted β-Zn_4Sb_3, the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10~4S·m~(-1) at room temperature for the x = 0.1 sample.The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10~(-3)W·m~(-1)·K~(-2) at 543 K.     

Paraconductivity study in ErBa_2Cu_(3-x)M_xO_(7-δ)(M=Zn,Fe) superconductors

We report here the paraconductivity of ErBa_2Cu_(3-x)M_xO_(7-δ)(M=Zn, Fe) superconductors.The logarithmic plots of excess conductivityσand reduced temperatureCreveal two different exponents corresponding to crossover temperature as a result of shifting the order parameter from 2 to 3.The first exponent in the normal field region is close to1,in which the order parameter dimensionality(OPD)is 2.The second exponent in the critical field region is close to 0.5,in which the OPD is 3.The coherence length,interlayer coupling,interlayer separation and carrier concentration decrease with increasing doping content,and their values for Fe samples are different from those of Zn samples.While anisotropy is increased with increasing doping content,it is generally higher for a Zn sample than that for an Fe sample.We also estimate several physical parameters such as upper critical magnetic fields in the a–b plane and along the c axis(Baband Bc),and critical current density J at 0 K.Although Baband Bcare generally increased with doping content increasing,the value of Babis found to be twice more than that of Bc.A similar behavior is obtained for J(0 K)and its value is higher in the Fe sample than that in the Zn sample.These results are discussed in terms of oxygen deficiency,localization of carriers,and flux pinning,which are produced by doping.     

Effects of Ag Doping on Magnetoresistance of La0.833 K0.167MnO3 Polycrystalline Perovskite Manganites

The microstructure,magnetic and transport properties of the heterogeneous system with a nominal composi-tion (1/m)Ag2O-La0.833K0.167MnO3 (1/m is molar ratio with m=32,16,8,4,and 2) have been studied.The x-ray diffraction patterns show that all the samples are two-phase composite and consist of a magnetic La0.833K0.167MnO3 (LKMO) perovskite phase and a nonmagnetic metal Ag phase.The room-temperature magnetoresistance (MR) effect is enhanced significantly due to the addition of Ag.For the m=4 sample,we obtain MR values up to 32％ under a lower field of 0.5 T and 64％ under a higher field of 5.5 T at the temperature of 300K,which are much larger than the corresponding MR values (10％and 35％) of the LKMO sample withoutAg.In the low-temperature range from 4.2K to 250K,the MR values of the Ag-added samples however decrease with the increasing Ag content in the samples.This effect is discussed qualitatively by using the relative contribution from the intrinsic MR effect and the extrinsic MR effect including the spin-polarized-tunnelling and spin-dependent scattering effects in different temperature regions.     

Amorphous-crystalline dual-layer structures resulting from metastable liquid phase separation in(Fe₅₀Co₂₅B₁₅Si₁₀)₈₀Cu₂₀ melt-spun ribbons

(Fe50Co25B15Si10)80Cu20 ribbons are prepared by using the single-roller melt-spinning method.A dual-layer structure consisting of a(Fe,Co)-rich amorphous phase and a Cu-rich crystalline phase forms due to metastable liquid phase separation before solidification.The magnetic hysteresis loops of the as-quenched and annealed samples are measured at room temperature.It is indicated that the coercivity of the ribbon is almost zero in the as-quenched state.The crystallization leads to the increase of coercivity and decrease of saturation magnetization.     

Effect of carrier mobility on performance of perovskite solar cells

The high carrier mobility and long diffusion length of perovskite material have been regarded because of its excellent photovoltaic performance. However, many studies have shown that a diffusion length longer than 1 μm and higher carrier mobility have no positive effect on the cells' performance. Studies of organic solar cells have demonstrated the existence of an optimal mobility value, while systematic research of the carrier mobility in the PSCs is very rare. To make these questions clear, the effect of carrier mobility on perovskite solar cells' performance is studied in depth in this paper by simulation.Our study shows that the optimal mobility value of the charge transportation layer and absorption layer are influenced by both doping concentration and layer thickness. The appropriate carrier mobility can reduce the carrier recombination rate and enhance the carrier concentration, thus improving the cells' performance. A high efficiency of 27.39% is obtained in the simulated cell with the combination of the optimized parameters in the paper.     

The Hole Transport Characteristics of 1,4,5,8,9 and 11-Hexaazatriphenylene-Hexacarbonitrile by Blending

The hole transport characteristics of molecule blends of 1,4,5,8,9 and 11-hexaazatriphenylene-hexacarbonitrile(HAT-CN):N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine(NPB) and HAT-CN:4,4'-cyclohexyhdenebis[N,Nbis(4-methylphenyl)benzenamine](TAPC) with various NPB and TAPC mixing concentrations(5-90 wt%) are studied.When the concentration is in the range of 5-80 wt%,it is found that the hole conductions in the two blends are space-charge-limited current(SCLC) with free trap distributions.The current-voltage characteristics of the two blends show SCLC with exponential trap distributions at the concentration of 90wt%.The hole mobilities of the two blends are very close(10~(-4)~10~(-3) cnr~2V~(-1)s~(-1)),the dependence of electric field and temperature can be described by the modified Poole—Prcnkel model.The hole mobility and activation energy of the two blends depending on concentration are similar.     

Improvement of Thermoelectric Performance in BiCuSeO Oxide by Ho Doping and Band Modulation

We try to use Ho doping combined with band modulation to adjust the thermoelectric properties for BiCuSeO.The results show that Ho doping can increase the carrier concentration and increase the electrical conductivity in the whole temperature range.Although Seebeck coefficient decreases due to the increase of carrier concentration,it still keeps relatively high values,especially in the middle and high temperature range.On this basis,the band-modulation sample can maintain relatively higher carrier concentration while maintaining relatively higher mobility,and further improve the electrical transporting performance.In addition,due to the introduction of a large number of interfaces in the band-modulation samples,the phonon scattering is enhanced effectively and the lattice thermal conductivity is reduced.Finally,the maximal power factor(PF) of 5.18μW·cm~(-1)K~(-2) and the dimensionless thermoelectric figure of merits(ZT) of 0.81 are obtained from the 10% Ho modulation doped sample at 873 K.     

Amorphous-crystalline dual-layer structures resulting from metastable liquid phase separation in （Fe50Co25B15Si10）80Cu20 melt-spun ribbons

（Fe50Co25B15Si10）80Cu20 ribbons are prepared by using the single-roller melt-spinning method. A dual-layer structure consisting of a （Fe, Co）-rich amorphous phase and a Cu-rich crystalline phase forms due to metastable liquid phase separation before solidification. The magnetic hysteresis loops of the as-quenched and annealed samples are measured at room temperature. It is indicated that the coercivity of the ribbon is almost zero in the as-quenched state. The crystallization leads to the increase of coercivity and decrease of saturation magnetization.     

Simulation of Anisotropic Resistivity for Mixed-Phase Manganite La2／3Ca1／3MnO3 Thin Films

We utilize the random network model based on phase separation scenario to simulate the conductive behaviour and anisotropic characteristics of resistivity for La2/3Ca1/3MnO3 (LCMO) thin films. The simulated results agree well with our experimental data, showing a metal-to-insulator transition from a high-T paramagnetic (PM) insulating phase to a low-T ferromagnetic (FM) metallic phase in both the untilted film deposited on a (001) SrTiO3 (STO) substrate and the tilted film grown on a vicinal cut STO substrate. It is found that the resistivity of the tilted sample is higher than that of the untilted one, displaying prominent anisotropic characteristics. The studies reveal that the tilting not only decreases the conduction of the FM domains, but also increases the activation energy of the PM regions, inducing the enhancement of resistivity. All those results suggest that the intrinsic inhomogeneity in the phase separation system plays a significant role in the electrical conductivity and the resistive anisotropy is related to the structure of the crystal lattice.     

Carrier behavior of Hg Te under high pressure revealed by Hall effect measurement

We investigate the carrier behavior of Hg Te under high pressures up to 23 GPa using in situ Hall effect measurements.As the phase transitions from zinc blende to cinnabar, then to rock salt, and finally to Cmcm occur, all the parameters change discontinuously. The conductivity variation under compression is described by the carrier parameters. For the zinc blende phase, both the decrease of carrier concentration and the increase of mobility indicate the overlapped valence band and conduction band separates with pressure. Pressure causes an increase in the hole concentration of Hg Te in the cinnabar phase, which leads to the carrier-type inversion and the lowest mobility at 5.6 GPa. In the phase transition process from zinc blende to rock salt, Te atoms are the major ones in atomic movements in the pressure regions of 1.0–1.5 GPa and1.8–3.1 GPa, whereas Hg atoms are the major ones in the pressure regions of 1.5–1.8 GPa and 3.1–7.7 GPa. The polar optical scattering of the rock salt phase decreases with pressure.     

Complex alloying effect on thermoelectric transport properties of Cu_2Ge(Se_(1-x)Te_x)_3

To enhance the thermoelectric performance of Cu_2GeSe_3, a series of Te-alloyed samples Cu_2Ge(Se_(1-x)Te_x)_3 are synthesized and investigated in this work. It is found that the lattice thermal conductivity is reduced drastically for x = 0.1 sample, which may be attributed to the point defects introduced by alloying. However, for samples with x ≥ 0.2, the lattice thermal conductivity increases with increasing x, which is related to a less distorted structure. The structure evolution,together with the change in carrier concentration, also leads to a systemically change in electrical properties. Finally, a z T of 0.55@750 K is obtained for the sample with x = 0.3, about 62% higher than that for the pristine sample.     

Experimental investigation of photolunlinescence spectra of Yb~(3+) sensitized Er~(3+)-doped glass samples in series

Fabrication technology of the Yb3+:Er3+ co-doped glass samples is introduced. Photolummescence (PL) characteristics of a single sample were experimentally investigated. The PL peak intensities of two samples in series were measured and discussed. The results show that the PL peak intensities of two samples in series depend on pump manners and arrangement of the samples. The better amplification ability can be obtained by two samples in series doped with low-concentration ytterbium instead of a single sample doped with high-concentration ytterbium.     

Distinctive distribution of defects in CdZnTe:In ingots and their effects on the photoelectric properties

Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques. Samples cut from the head(T04) and tail(W02) regions of a crystal ingot show distinct differences in Te inclusion distribution. Obvious difference is not observed in Fourier transform infrared(FTIR) spectra, UV–Vis–NIR transmittance spectra, and Ⅰ–Ⅴ measurements. However, carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current(LBIC) measurements. Low temperature photoluminescence(PL) measurement presents sharp emission peaks of D~0 X and A~0 X, and relatively large peak of D~0 X(or A~0 X)/D_(complexfor) T04, indicating a better crystalline quality. Thermally stimulated current(TSC) spectrum shows higher density of shallow point defects, i.e.,Cd vacancies, In_(Cd)~+, etc., in W02 sample, which could be responsible for the deterioration of electron mobility.     

Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiN_x multilayers

Nanocrystalline Ge （nc-Ge） single layers and nc-Ge/SiNx multilayers are prepared by laser annealing amorphous Ge （a-Ge） films and a-Ge/SiNx multilayers. The microstructures as well as the electrical properties of laser-crystallized samples are systematically studied by using various techniques. It is found that the optical band gap of nc-Ge film is reduced compared with its amorphous counterpart. The formed nc-Ge film is of p-type, and the dark conductivity is enhanced by 6 orders for an nc-Ge single layer and 4 orders for a multilayer. It is suggested that the carrier transport mechanism is dominant by the thermally activation process via the nanocrystal, which is different from the thermally annealed nc-Ge sample at an intermediate temperature. The carrier mobility of nc-Ge film can reach as high as about 39.4 cm2.V ^-1 .s^-1, which indicates their potential applications in future nano-devices.     

The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency(RF) magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10-4.cm,with a high Hall mobility of 30 cm2.V-1.s-1 and a carrier concentration of 2.3×1020 cm-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.     

Magneto-optical Kerr Effect in Co/Alq3 Granular Films

A series of Co/Alq3 granular film samples are prepared using co-evaporating technique. The microstructures and magnetic properties are investigated. The Kerr spectra and optical constants of Cox（Alq3）1-x （0.19 ≤ x ≤ 1） granular films are measured using a magneto-optical Kerr spectrometer and a spectroscopic ellipsometer in the 1.5-4.5 eV photon energy range. The Kerr rotation reaches the maximum value of 0.5° in the x = 0.65 sample. The relationship between enhanced Kerr rotation and optical constants is discussed, and the concentration dependence of MOKE spectra is also investigated.     

Three—Colour SIngle—Mode Electroluminescence from Alq3 Tuned by microcavities

Organic metal microcavities were fabricated by using full-reflectivity aluminium film and semi-transparent silver film as cavity mirrors.Unlike conventional organic microcavities,such as the typical structure of glass/DBR/ITO/-organic layers /metal mirror,a microcavity with a shorter cavity length was obtained by using two metal mirrors,where DBR is the distributed Bragg reflector consisting of alternate quarter-wave layers of high and low refractive index materials.It is realized that red,green and blue single-mode electroluminescence(EL) from the microcavities with the structure,glass/Ag/TPD/Alq3/Al,are electrically-driven when the thickness of the Alq3 layer changes,Compared to a non-cavity reference sample whose EL spectrum peak is located at 520nm with a full width at half maximum(FWHM)of 93nm,the microcavity devices show apparent cavity effects.The EL spectra of red,green and bule microcavities are peaked at 604nm,540nm and 491nm,with FWHM of 43nm,38nm and 47nm respectively.     

Raman scattering study of phase transition in Lu_2O_3–Ta_2O_5

The lutetium tantalate compounds obtained from Lu2O3–Ta2O5 with a molar ratio of 0.515 : 0.485 were studied by Raman scattering and x-ray diffraction. The results of the room temperature Raman scattering indicate that the sample has a phase transition between 1830?C and 1872?C, the polycrystalline is a mixture of M-LuTaO4 and Lu3TaO7(F m3m)when it is prepared at 1830?C, and a mixture of M-LuTaO4(B112/b) and Lu3 Ta O7(Fm3m) when it is prepared at above 1872?C. The sample melts at a temperature of 2050?C. The phase transition of the sample prepared at 2050?C was also investigated by the high-temperature Raman spectra, and the result indicates that no phase transition occurs between room temperature and 1400?C, which is consistent with the results from the x-ray diffraction.