Sn自溶剂含量对Al掺杂Ⅷ型Sn基单晶笼合物电传输特性的影响

通过Sn自熔剂法制备了Al掺杂Ⅷ型Sn基单晶笼合物Ba8Ga10Al6Snx(x=40,50,60;Sn40,Sn50,Sn60),并研究Ba8Ga10Al6Snx单晶笼合物的结构和电传输特性对自熔剂Sn初始含量的依赖性.结果表明,Al的实际含量随Sn自熔剂含量的增加而基本保持不变,说明Sn的起始含量对Al在该笼合物中固溶度的影响较小;室温下Sn60样品的载流子浓度较高,这可能是因Al在笼合物Ga8 Ga16Sn30中的占位不同而导致费米能级附近能带色散关系发生变化所引起;另一方面,在300～600 K的温度范围内,获得较高功率因子的是Sn初始含量为50的样品,在488 K处获得最大值1.82×10-3 W·m-1·K-2;获得较低功率因子的是Sn初始含量为40的样品,而功率因子较低主要是由于该样品电导率较低.     

Large inverse and normal magnetocaloric effects in HoBi compound with nonhysteretic first-order phase transition

HoBi single crystal and polycrystalline compounds with NaCl-type structure are successfully obtained, and their magnetic and magnetocaloric properties are studied in detail. With temperature increasing, HoBi compound undergoes two magnetic transitions at 3.7 K and 6 K, respectively. The transition temperature at 6 K is recognized as an antiferromagnetic-to-paramagnetic (AFM-PM) transition, which belongs to the first-order magnetic phase transition (FOMT). It is interesting that the HoBi compound with FOMT exhibits good thermal and magnetic reversibility. Furthermore, a large inverse and normal magnetocaloric effect (MCE) is found in HoBi single crystal in the $H|| [100]$ direction, and the positive $\Delta S_{\rm M}$ peak reaches 13.1 J/kg$\cdot$K under a low field change of 2 T and the negative $\Delta S_{\rm M}$ peak arrives at $-18 $ J/kg$\cdot$K under a field change of 5 T. These excellent properties are expected to be applied to some magnetic refrigerators with special designs and functions.     

Ge覆盖层诱导晶化多晶Si薄膜的晶化特性研究

采用电子束蒸发技术在衬底温度为180℃条件下生长具有Ge覆盖层的非晶Si薄膜,并于500℃、600℃、700℃真空退火5h.采用Raman散射、X射线衍射(XRD)、全自动数字式显微镜等对所制备薄膜的晶化特性进行研究.结果表明,Ge覆盖层具有诱导非晶Si薄膜晶化的作用,且随着退火温度的升高a-Si薄膜晶化越显著.具有Ge覆盖层非晶薄膜经500℃退火5h沿Si(400)方向开始晶化,对应晶粒尺寸约为4.9 nm.将退火温度升高到700℃时,非晶硅薄膜几乎全部晶化,晶化多晶Si薄膜在Si(400)方向表现出很强的择优取向特性,晶粒尺寸高达23.3μm.与相同条件下制备的无Ge覆盖层的非晶Si薄膜相比,晶化温度降低了300℃.     

并联模型研究双层热电薄膜热电性能

目前,热电双层膜的电输运性能测量及预测一般采用并联模型理论,然而并联模型使用条件缺乏理论和实验的支持和验证.本文借助于COMSOL Multiphysics软件采用有限元理论模拟得到了Cu/Si, Ag/Si双层膜在施加温度差下的塞贝克系数,并与并联模型进行比较.研究双层膜两端是否镀金属Pt层、双层膜之间插入高阻/低阻/绝缘界面对双层膜的塞贝克系数测量结果的影响.研究发现,当冷热端无Pt时,高阻和电绝缘界面时Si和Cu两侧电势分别沿温度梯度方向均匀分布,测得其塞贝克系数分别与材料本身的值相同,低阻界面时Cu侧热电势随着探针间距L均匀变化, Si侧呈现非均匀变化.有Pt时, Cu和Si侧的热电势沿着温度梯度的方向分布均匀,无论在绝缘/高阻/低阻界面中, Si和Cu两侧测量值均与Cu塞贝克系数相同.实验研究了Si/Ag和Bi/Ag双层膜,无Pt时, Si/Ag双层膜Si侧的塞贝克系数的绝对值随着温度的降低而降低,但是Ag侧塞贝克系数的绝对值随着温度的降低而升高.有Pt时, Bi/Ag双层膜两侧的塞贝克系数相同.     

Advances in thermoelectric (GeTe)x(AgSbTe2)100-x

The (GeTe)_x(AgSbTe₂)_100-x alloys, also called TAGS-x in short, have long been demonstrated as a promising candidate for thermoelectric applications with successful services as the p-type leg in radioisotope thermoelectric generators for space missions. This largely stems from the complex band structure for a superior electronic performance and strong anharmonicity for a low lattice thermal conductivity. Utilization of the proven strategies including carrier concentration optimization, band and defects engineering, an extraordinary thermoelectric figure of merit, zT, has been achieved in TAGS-based alloys. Here, crystal structure, band structure, microstructure, synthesis techniques and thermoelectric transport properties of TAGS-based alloys, as well as successful strategies for manipulating the thermoelectric performance, are surveyed with opportunities for further advancements. These strategies involved are believed to be in principle applicable for advancing many other thermoelectrics.     

Peltier系数的稳态法和瞬态法测量

在热电效应的研究中, Kelvin关系建立了Seebeck系数与Peltier系数之间的桥梁,它将热电材料的制冷与发电性能纳入了统一的评价体系,并且大大地简化了热电性能测量的过程.然而非线性Peltier效应的理论研究以及部分实验研究表明, Seebeck系数与Peltier系数之间不一定满足Kelvin关系. Peltier系数的精确测量是验证Kelvin关系以及研究非线性Peltier效应的基础,但目前其实验研究较少.本文基于低温电输运测试平台搭建一种采用悬臂梁结构的Peltier系数测量装置.通过测量通电后Bi2Te3块体样品表面沿热流方向相邻两点的温差,得到通电前后的稳态温差以及通电过程中温差随时间的瞬态变化的曲线,利用稳态法和瞬态法分别得到Peltier系数.通过测量,不仅仅可以得到材料的Peltier系数,还能得到测量接触点的界面电阻等信息.研究表明,在各温度下,稳态法和瞬态法测量的Peltier系数是可以相互印证的,验证了本实验中测量装置和方法的可靠性.碲化铋样品Peltier系数的测量值与Kelvin关系式计算的理论值随温度的变化趋势是一致的,测量值比理论值约大20%.     

Thermal stability and electrical transport properties of Ge/Sn-codoped single crystalline β-Zn_4Sb_3 prepared by the Sn-flux method

This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_(4.4)Sb_3 Ge_xSn_3(x = 0–0.15). The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability.Compared with the polycrystalline Ge-substituted β-Zn_4Sb_3, the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10~4S·m~(-1) at room temperature for the x = 0.1 sample.The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10~(-3)W·m~(-1)·K~(-2) at 543 K.     

灰锡自溶剂法Ba/Eu复合填充Ⅷ型Sn基单晶笼合物的制备及电传输特性

采用灰锡自溶剂法制备Ⅷ型Sn基单晶笼合物,并通过Eu对其进行掺杂.研究表明所制备样品均为空间群为I(4)3m的p型Ⅷ型Sn基单晶笼合物,Eu原子趋于取代Ba原子,且随着Eu元素起始含量的增加,材料晶格常数减小,熔点升高,较低的载流子浓度与较高的载流子迁移率使得材料Seebeck系数与电导率都有所提升,Eu起始含量x =0.50的样品其ZT值在480 K处获得最大值0.87.