高重复频率相干衍射辐射超宽谱太赫兹源

研究了一种新型相干衍射辐射（CDR）太赫兹源,该太赫兹源基于中国工程物理研究院自由电子激光相干强太赫兹源（FEL-THz）的加速器电子束束流,具有MHz量级重复频率。理论分析、数值计算和PIC模拟证明了此太赫兹源时间长度可达到ps量级,中心频率在100~400 GHz可调,截止频率位于1~2 THz,脉冲峰值功率可达10 kW量级,平均功率可达到W量级,并且功率随束流流强成平方正比关系。     

Study on the characteristics of linac based THz light source

There are many methods based on linac for THz radiation production.As one of the options for the Beijing Advanced Light, an ERL test facility is proposed for THz radiation.In this test facility, there are 4 kinds of methods to produce THz radiation: coherent synchrotron radiation (CSR), synchrotron radiation (SR), low gain FEL oscillator, and high gain SASE FEL.In this paper, we study the characteristics of the 4 kinds of THz light sources.     

An Artificially Garnet Crystal Materials Using In Terahertz Waveguide

A hypothesis is brought forward that the materials with low propagation loss in both optical and microwave band may exhibit good performance in terahertz （THz） band because THz wave band interspaces those two wave bands. For the purpose-of exploring a kind of low-loss material for THz waveguide, Lu2.1Bi0.9Fe5O12（LuBiIG） garnet films are prepared by liquid phase epitaxy （LPE） method on a gadolinium gallium garnet （GGG） substrate from lead-free flux because of the good properties in both optical and microwave bands. In microwave band, the ferromagnetic resonance （FMR） linewidth of the film 2△H = 2.8-5.1Oe; in optical band, the optical absorption coefficient is 600cm^-1 at visible range and about 100-170cm^-1 when the wavelength is longer than 800nm. In THz range, our hypothesis is well confirmed by a THz-TDS measurement which shows that the absorbance of the film for THz wave is 0.05-0.3 cm 1 and the minimum value appears at 2.3 THz. This artificial ferromagnetic material holds a great promise for magnetic field tunable THz devices such as waveguide, modulator or switch.     

用于真空电子太赫兹器件的微型热阴极电子束源研究

太赫兹波辐射源是太赫兹(THz)波技术的关键.真空电子太赫兹器件在高频、大功率太赫兹源发展中较其他技术有明显的优势,微米尺度高电流密度微型电子束源则是研制真空电子太赫兹器件的核心之一.本文在研制低温、大电流纳米粒子氧化钪掺杂含钪扩散阴极(nanosized-scandia doped dispenser cathode)的基础上,采用发射抑制膜沉积与聚焦离子束(FIB)刻蚀技术,研制无需压缩直接提供高电流密度的微型电子束的电子源.所研究的电子束源直径400μm,在工作温度950fiC,提供空间电荷限制电流密度50 A/cm2时,已稳定工作1000 h以上,并且层流性良好.本文阐述了阴极制备工艺、电子发射特性、微米尺度电子束源的获得和特性,介绍了发射抑制膜的结构和抑制特性的评估.并探讨了镀膜和刻蚀对发射的影响机理.这一电子束源在常规毫米尺度电子源的基础上产生微米尺度的微区高电流密度的电子束,为真空电子太赫兹辐射源的研制提供了新的途径.     

Compact narrow-band THz radiation source based on photocathode rf gun

Narrow-band THz coherent Cherenkov radiation can be driven by a subpicosecond electron bunch traveling along the axis of a hollow cylindrical dielectric-lined waveguide. We present a scheme of compact THz radiation source based on the photocathode rf gun. On the basis of our analytic result, the subpicosecond electron bunch with high charge (800 pC) can be generated directly in the photocathode rf gun. According to the analytical and simulated results, a narrow emission spectrum peaked at 0.24 THz with 2 megawatt (MW) peak power is expected to gain in the proposed scheme (the length of the facility is about 1.2 m).     

不同抽运光强激发窄带隙半导体产生太赫兹辐射的研究

研究了窄带隙材料InAs和三种不同掺杂浓度的InN在不同抽运光强激发下产生太赫兹(THz)波的辐射特性.实验结果表明:在相同的抽运光强下,InN和InAs辐射的THz信号强度在同一量级,InAs较InN辐射效率要高一些.随着抽运光强的增大,这几种材料的发射光谱变得更宽,当抽运光增大到一定强度时,它们的发射光谱半极大值全宽(HMFW)趋于恒定.InN比InAs更容易在较低功率的抽运光作用下获得宽带太赫兹光谱.研究也表明,不同掺杂浓度对辐射THz波的强度及辐射效率有很大影响.这项研究对于探索半导体表面辐射太赫 关键词： InN InAs 太赫兹 抽运光强     

光子学太赫兹源研究进展

为了进一步开发、利用高功率、高效率、可调谐且在室温下稳定运转的太赫兹(THz)源,介绍、分析了国内外利用光子技术产生THz波的研究进展,包括THz气体激光器、空气等离子体THz源、光电导天线以及基于非线性光学效应的光学整流、光学差频、参量振荡等THz源,并指出了光子学THz源未来发展所面临的困难和需要解决的关键技术。     

Coupled THz Waveguide Utilizing Surface Plasmon Polaritons on Thin Dielectric Slab Sandwiched between Two Corrugated Metallic Claddings

We present a comprehensive experimental study of terahertz （THz） wave propagation utilizing surface plasmon polaritons （SPPs） on the interfaces of a thin dielectric core layer sandwiched between two corrugated metallic claddings. THz wave impinges on the structured surfaces at normal incidence. Long-lasting oscillation propagation features are observed in the temporal waveform after traveling through the periodic arrays. The enhanced THz transmission can be achieved due to the coupling between incident waves to SPPs at the bottom and top interfaces. The finite element method is used to simulate the field distribution and the transmission mode in the waveguide. The hybrid waveguide with low absorption has great potential applications in THz integrated devices.     

紧凑型THz源的史密斯-帕塞尔辐射模拟

 采用模拟和数值计算的方法,研究了THz波段的受激史密斯-帕塞尔辐射特性。实验装置以“上海电子束离子阱”为原型,采用紧凑型设计以便最终实现其可移动性。束流动力学模拟表明,此装置采用强磁场,可以得到平均流强为0.2 A、束流半径为75 μm的高品质电子束,为电子束工作在自由电子激光模式下创造了条件。基于Andrews和 Brau的理论,优化了光栅参数,保证了辐射角度在60°。其中消散场的计算频率为0.365 9 THz。采用particle-in-cell(PIC)程序模拟了光栅表面的辐射场以及电子的动力学特性。模拟结果表明电子有群聚效应,且二次谐波（0.723 THz,约为消散频率的2倍）得到增强。采用后处理方法计算了史密斯-帕塞尔辐射的功率空间分布。计算显示辐射角度与理论角度相一致,表明了方法的有效性。输出的功率约为2 mW。     

并行多注THz折叠波导行波管的理论分析与数值模拟

为了提高THz行波管的输出功率,通过并行多注和功率合成的方法,完成了并行多注D波段折叠波导行波管的理论分析与数值模拟。计算结果表明:单束行波管在0.135～0.157THz频率区间具有很好的色散平坦度,3dB带宽为13GHz,0.14THz处获得了20.88dB的最大增益;多束合成行波管在0.14THz处获得了20.8dB的合成增益,3dB带宽区间合成效率不低于92%。数值模拟表明该方法很好地实现了多路放大信号的合成输出。并行多注行波管具有输出功率大、单束电流小、聚焦磁场低等优点,能够在低发射电流密度条件下实现大功率THz辐射。     

Time-Domain Simulation of Power Combining in a Chain of THz Gunn Diodes in a Transmission Line

Solid-state THz devices usually suffer from low power output. This, however, can be overcome by efficient power combining. In this paper, the power combining of a chain of active devices (longitudinal array of N Gunn diodes) in a semi-infinite transmission line has been simulated. Superlinear growth of power P is found in a line with inductive-capacitive elements: P is quadratic in N when P is small and becomes linear when P is large. Intricate auto-modulation due to coupling between the devices is shown to accompany power combining.     

基于振动弛豫理论提高光抽运太赫兹激光器输出功率的研究

以半经典密度矩阵理论和分子振动弛豫理论为基础,研究添加适当比例缓冲气体与适当减小波导芯径对光抽运太赫兹激光器输出光强的影响.计算结果表明,加入适当比例缓冲气体或适当减小波导的芯径均能提高太赫兹激光的输出光强;同时优化两个参数能进一步提高抽运激光能量转化为太赫兹激光能量的效率,延长工作腔中的有效激活区,延缓抽运饱和效应的出现,提高太赫兹激光输出光强.该研究对提高光抽运太赫兹激光器的能量转化效率、提高光抽运太赫兹激光器的输出功率及实现光抽运太赫兹激光器的小型化有重要的指导意义.     

平面天线在场效应晶体管太赫兹探测器中的应用

为了提高场效应晶体管太赫兹探测器的响应度并降低噪声等效功率,需要对探测器集成平面天线的结构进行合理设计与优化,本文对集成平面天线结构的场效应晶体管太赫兹探测器的研究进行了深入调研。首先,对场效应晶体管太赫兹探测器的工作原理进行了分析,介绍了集成平面天线如何解决耦合太赫兹波效率低的问题。然后,介绍了一些常用的平面天线结构,包括偶极子天线、贴片天线、缝隙天线、grating-gate和其他类型的结构,比较了各种天线的性能以及引入后对太赫兹探测器响应度的影响。通过对比不同天线结构的探测器响应度和噪声等效功率等参数指标,发现:采用平面天线结构之后,场效应晶体管太赫兹探测器的响应度有了大幅度的提升,各种类型的天线对探测器响应度都有不同程度的提升。本文着重介绍了几种集成于场效应晶体管的平面天线结构,包括各种天线的性能和研究进展,最后分析了场效应晶体管太赫兹探测器存在的问题和发展趋势。     

Design and analysis of a metallic waveguide with a DAST cap for continuously phase-matched terahertz difference frequency generation

We present a novel source for continuous terahertz (THz) wave generation using an organic ionic salt, 4-dimethylamino-N-methyl-4-stilbazolium-tosylate (DAST). THz waves are generated based on difference frequency generation (DFG) in the device. Phase matching condition and THz generation between 1.3 THz and 2.7 THz, for optical pump around 1.6 μm, are investigated. Our calculations predict that the device produces a relatively high THz output power of 11.07 μW from a 4 cm long waveguide at 2 THz.     

反应离子刻蚀ZnTe的THz辐射和探测研究

运用电光采样技术揭示了反应离子刻蚀（RIE）ZnTe晶体表面THz辐射的光学整流产生机制， 观察到0.25 ps的THz场分布.通过比较刻蚀前后以及不同刻蚀条件下ZnTe样品在不同激发功 率下的THz辐射强度，发现由于反应离子刻蚀破坏了ZnTe样品表面的有序性，晶体的电光系 数随射频功率的增加而减小.借助于计算不同刻蚀条件下ZnTe晶体的频率响应函数，分析了 随射频功率增加ZnTe晶体响应频谱展宽的现象. 关键词： THz辐射 反应离子刻蚀 ZnTe     

Terahertz (THz) Frequency Sources and Antennas - A Brief Review

In this paper we review THz radiation properties, generation methods, and antenna configurations. This paper suggests some new class of antennas that can be used at THz frequency, like optical antennas or Carbon nanotube antennas. THz technology has become attractive due to the low energy content and nonionizing nature of the signal. This property makes them suitable for imaging and sensing applications. But at the same time detection and generation of THz signals has been technologically challenging. This paper presents a comparative study of the generation techniques for THz frequency signals giving emphasis to the some new techniques like Quantum Cascade lasers which has created significant research interest. The main aim for this study is to find out the materials suitable for fabricating THz devices and antennas, a suitable method for generation of high power at THz frequency and an antenna that will make THz communication possible.     

基于光放大的长脉冲抽运太赫兹激光

为了获得较窄增益带宽、较大光强的太赫兹辐射,尝试了利用TEA CO₂激光器对6 W可调谐连续波CO₂种子激光实行双程光放大实验,以期望获得长脉冲、高峰值功率的抽运光.通过实验,获得了大约30倍的放大系数,放大光输出功率随种子光注入功率的增加而增加,其中10 P （20）支线表现更加突出,并且被放大的激光支线半峰全宽在14 μs左右.基于这种长脉冲抽运源,建立了一种产生脉冲太赫兹的动力学模型,给出了产生太赫兹辐射的饱和抽运光强表达式,确定了抽运光的光强范围.另外, 关键词： 激光物理 长脉冲 动力学模型 太赫兹激光     

The effect of two-photon absorption and optical excitation area on the generation of THz radiation

It was found experimentally that the THz radiation throughput based on optical rectification is strongly related to the optical excitation size in a ZeTe emitter. The factors affecting the THz radiation throughput are investigated in detail both experimentally and theoretically. By taking into account optical rectification, diffraction and two-photon absorption effects, a theoretical model is established to describe the emitting field intensity of THz radiation. There is excellent agreement between the theoretical results and the experimental data under high excitation power. Both theoretical and experimental results demonstrate that there is a trade-off between these three effects for THz radiation, and that in order to increase the THz radiation throughput based on optical rectification, one should choose suitable excitation size under a given pump power.     

0.14THz基模多注折叠波导行波管的理论与模拟研究

为解决THz行波管工作电流过小、输出功率低等问题,提出了基模多注工作模式的折叠波导行波管.首先,获得了基模多注折叠波导色散特性的等效传输线计算模型,并与数值模拟结果进行了比较;然后,对基模多注折叠波导的传输特性进行了模拟计算;最后,通过模拟和理论计算完成了0.14 THz基模多注折叠波导行波管的注波互作用特性分析.电子注参数为12 m A,15.75 k V时,获得的3 d B带宽为25 GHz(128—153 GHz),最大增益为33.61 d B,最大峰值功率为23 W;电子注参数为30 m A,15.75 k V时,在0.14 THz处获得了38 d B增益,最大脉冲输出功率为63.1 W.对比同条件下基模单注折叠波导行波管,3 d B带宽提升了1倍,0.14 THz处输出功率增大了9.66倍,互作用效率增大了3.22倍;当增益相同时,多注方式的互作用长度较单注缩短了33%.该方法能够有效增大THz行波管的工作电流,提高互作用增益及效率、3 d B带宽、输出功率;在增益相同时,基模多注行波管可以做得更短更紧凑.     

On‐chip THz spectrometer for bunch compression fingerprinting at fourth‐generation light sources

The layout of an integrated millimetre‐scale on‐chip THz spectrometer is presented and its peformance demonstrated. The device is based on eight Schottky‐diode detectors which are combined with narrowband THz antennas, thereby enabling the simultaneous detection of eight frequencies in the THz range on one chip. The size of the active detector area matches the focal spot size of superradiant THz radiation utilized in bunch compression monitors of modern linear electron accelerators. The 3 dB bandwidth of the on‐chip Schottky‐diode detectors is less than 10% of the center frequency and allows pulse‐resolved detection at up to 5 GHz repetition rates. The performance of a first prototype device is demonstrated at a repetition rate of 100 kHz at the quasi‐cw SRF linear accelerator ELBE operated with electron bunch charges between a few pC and 100 pC.