滤波器增强的高灵敏度室温HEMT太赫兹探测器

制备了一种集成有太赫兹低通滤波器的高速、高灵敏度GaN/AlGaN高电子迁移率晶体管(HEMT)太赫兹探测器。实验研究表明,当在太赫兹天线与引线电极之间加入低通滤波器时,太赫兹耦合天线的谐振性能恢复,室温下器件的响应度达到了1.05×10~3 V/W;测试带宽为1Hz时,器件的噪声等效功率达到了4.7×10~(-11) W。利用该探测器单元对不同材料进行了快速扫描成像,结果表明,该探测器单元具有较好的成像分辨率,且器件的响应速度优于商用的气动探测器的和热释电探测器的。     

高精度太赫兹探测器响应度定标系统

为了保障太赫兹探测器测试的准确度和可信度,对太赫兹探测器响应度定标溯源技术进行研究,针对常用太赫兹探测器黑体辐射测试技术存在对环境、设备要求高和搭建难度大等问题,以中国计量科学研究院的热电型太赫兹探测器作为计量标准,提出一种校准方案,设计搭建了一套太赫兹探测器响应度定标系统。为提高定标准确度,实验测试了定标光学系统的光束质量,并合理设置光阑孔径以满足定标要求。在0.1 THz频点处对2个响应度未知的场效应自混频太赫兹探测器进行响应度定标。结果表明,定标的相对扩展不确定度为6.80% (k=2),验证了定标系统的可行性,系统可实现太赫兹探测器功率响应度溯源到国家激光功率标准,保障太赫兹功率测量的准确可靠。     

黑砷磷室温太赫兹探测器

由于太赫兹波与众多物质之间存在着丰富的相互作用,太赫兹技术在众多领域均有应用需求。因此,基于独特物理机制和优异材料特性的高灵敏度、便携式太赫兹探测器的研制刻不容缓。黑砷磷是一种新型二维材料,其带隙和输运特性随化学组分可调,在光电探测领域被广泛关注。目前基于黑砷磷的研究集中在红外探测方面,而对于太赫兹探测的应用未见报道。本文介绍了一种基于黑砷磷的天线耦合太赫兹探测器。实验结果表明,在探测过程中存在两种不同的探测机制,并且两者之间存在竞争关系。通过改变黑砷磷的化学组分可以定制不同的探测机制,使其达到最优响应性能。在平衡材料带隙和载流子迁移率的情况下,探测器实现了室温下对0.37 THz电磁波的灵敏探测,其电压响应度和噪声等效功率分别为28.23 V/W和0.53 nW/Hz1/2。     

圆环孔阵列超材料对热释电太赫兹探测器性能影响关系研究

本文提出了新的基于圆环孔阵列超材料的钽酸锂热释电太赫兹探测器,以提高0.1—1 THz频段太赫兹波探测性能.仿真分析了内外径、周期、厚度等特征参数对圆环孔阵列超材料太赫兹波透射带宽及透射率的定量影响关系,阐明了圆环孔阵列超材料与热释电探测器的不同结合方式对探测器的带宽及噪声等效功率的作用机理;制备了两种圆环孔阵列超材料钽酸锂热释电太赫兹探测器;测试了圆环孔阵列超材料的透射特性和两类热释电探测器的噪声等效功率.结果表明,所制备的圆环孔阵列超材料在0.25—0.65 THz频段透射率大于40%,实现了带通滤波.当圆孔阵列超材料与热释电探测器保持足够间距时,在0.315 THz点频其噪声等效功率为11.29μW/Hz^0.5,是带通波段外0.1 THz噪声等效功率的6.3%,实现了带通探测;当圆环孔阵列超材料与热释电探测器贴合时,在0.315 THz点频其噪声等效功率为4.64μW/Hz^0.5,是无圆环孔阵列超材料探测器噪声等效功率的29.4%,实现了窄带探测.上述结论可用于生物成像、大分子探测等领域中特定太赫兹波段的带通与窄带探测.     

一种太赫兹探测器绝对光谱响应度测量方法研究

绝对光谱响应度是探测器的重要技术参数之一，随着太赫兹探测技术的发展，精确测量太赫兹探测器的绝对光谱响应度变得越来越重要。由于在太赫兹波段缺乏连续可调谐的太赫兹光源以及分光系统，因此无法采用传统测量红外探测器绝对光谱响应度的方法来实现对太赫兹探测器绝对光谱响应度的测量。基于反射法测量了2～10 THz相对光谱响应度，通过CO₂泵浦气体激光器作为泵浦光源测量了2.52和4.25 THz绝对响应度，转化得到2～10 THz探测器的绝对光谱响应度，并且对2.52和4.25 THz绝对响应率和相对光谱响应度这两个频率点进行了相互验证，2.52和4.25 THz绝对响应度测量值之比为0.753,相对光谱响应度测量平均值之比为0.749,两者之差仅为0.004,因此，说明本文采用的反射法测量太赫兹探测器相对光谱响应度的方法是可行的。另外水汽在太赫兹波段的测试有很大的影响，对1.5～10 THz波段大气的衰减特性进行了测试，试验表明水汽对太赫兹波有明显的衰减作用，在不同环境湿度下测量时会产生不同的结果，因此在太赫兹探测器测量过程中需要严格的控制大气的湿度，从测试数据可得到，大气中...     

二维电子气等离激元太赫兹波器件

固态等离激元太赫兹波器件正成为微波毫米波电子器件技术和半导体激光器技术向太赫兹波段发展和融合的重要方向之一。本综述介绍AlGaN/GaN异质结高浓度和高迁移率二维电子气中的等离激元调控、激发及其在太赫兹波探测器、调制器和光源中应用的近期研究进展。通过光栅和太赫兹天线实现自由空间太赫兹波与二维电子气等离激元的耦合,通过太赫兹法布里-珀罗谐振腔进一步调制太赫兹波模式,增强太赫兹波与等离激元的耦合强度。在光栅-谐振腔耦合的二维电子气中验证了场效应栅控的等离激元色散关系,实现了等离激元模式与太赫兹波腔模强耦合产生的等离极化激元模式,演示了太赫兹波的调制和发射。在太赫兹天线耦合二维电子气中实现了等离激元共振与非共振的太赫兹波探测,建立了太赫兹场效应混频探测的物理模型,指导了室温高灵敏度自混频探测器的设计与优化。研究表明,基于非共振等离激元激发可发展形成室温高速高灵敏度的太赫兹探测器及其焦平面阵列技术。然而,固态等离激元的高损耗特性仍是制约基于等离激元共振的高效太赫兹光源和调制器的主要瓶颈。未来的研究重点将围绕高品质因子等离激元谐振腔的构筑,包括固态等离激元物理、等离激元谐振腔边界的调控、新型室温高迁移率二维电子材料的运用和高品质太赫兹谐振腔与等离激元器件的集成等。     

热电型太赫兹探测器响应度校准技术

为保证太赫兹辐射强度测量的准确可靠,对热电型太赫兹探测器的响应度进行了校准。首先,基于替代法构建了太赫兹探测器响应度校准装置,该装置的合成标准不确定度为2.4%。然后,在1.63 THz频率点处,利用校准装置对12D-3S-VP型太赫兹探测器进行了校准,得到的响应度校准结果为197.6 mV/W,与厂家标称值一致。对自主研制的热电型太赫兹探测器进行了校准,得到的响应度和合成标准测量不确定度分别为362.2 mV/W和2.7%。最后,将校准结果的标准偏差值与合成标准不确定度进行了比较,发现标准偏差值在合理范围内,这进一步证明了校准方法、校准结果以及不确定度分析的合理性。     

4.2K硅辐射热太赫兹探测器的响应度校准（英文）

提出一种基于标准黑体辐射源对宽谱太赫兹探测器进行响应度定标的方法.该方法包含一个直线型校准装置、两个定标流程和相应的模拟程序.考虑实验室温度、湿度和低通滤波器的透射特性,用该方法实现了4.2K硅辐射热太赫兹探测器的响应度定标.对黑体辐射的傅里叶变换光谱进行测试,验证了定标程序和定标结果.分析定位了定标装置的三种主要误差来源,并提出相应的改进措施.所提定标方法适用于热释电太赫兹探测器、微型辐射热太赫兹探测器等宽谱太赫兹探测器的响应度定标.     

THz谐振腔型石墨烯光电探测器的设计

由于石墨烯在太赫兹波范围内只发生带内跃迁,相比在可见光范围内,其光学吸收特性有显著优势,通过集成石墨烯与谐振腔,将太赫兹波限制在腔内,可进一步增强石墨烯对太赫兹波的吸收.采用麦克斯韦方程组并结合电磁场边界条件,研究了单层石墨烯在太赫兹波段范围内的光吸收机理;推导出石墨烯的传输矩阵和吸收系数方程,发现在太赫兹波段石墨烯的吸收是在可见光波段吸收的9—22倍;通过建立谐振腔型石墨烯光电探测器在太赫兹波段的光吸收模型及求解探测器吸收率方程,发现在0.12 THz处,吸收率可达0.965,相比无腔状态下石墨烯在太赫兹波段的最大吸收率0.5,提高了93%;优化设计器件结构参数并表征,最终器件响应度最高达到236.7 A/W,半高全宽为0.035 THz.理论分析表明,采用谐振腔型石墨烯光电探测器对太赫兹波进行探测,具有高吸收率、高响应度.研究结果对于太赫兹谐振腔型石墨烯光电探测器的设计和应用提供了理论参考.     

高速太赫兹探测器

太赫兹(terahertz,THz)技术在高速空间通信、外差探测、生物医学、无损检测和国家安全等领域具有广阔的应用前景.能响应1 GHz调制速率以上THz光的高速THz探测器是快速成像、THz高速空间通信、超快光谱学应用技术和THz外差探测等领域的核心器件.传统的THz热探测器难以实现高速工作,而基于半导体的THz探测器在理论上可实现高速工作.光导天线具有超快的响应速度,可实现常温和宽谱探测;肖特基势垒二极管混频器、超导-绝缘体-超导混频器和超导热电子混频器具有转换效率高、噪声低等优点,可用于高速THz空间外差和直接探测;基于高迁移率二维电子气的天线耦合场效应晶体管灵敏度高、阻抗低,可实现常温高速THz探测;THz量子阱探测器是一种基于子带间跃迁原理的单极器件,非常适合高频和高速探测应用,亚波长金属微腔耦合机理可显著提高器件的工作温度及光子吸收效率.本文对上述几种高速THz探测器进行了综述并分析了各种探测器的优缺点.     

Terahertz (THz) Frequency Sources and Antennas - A Brief Review

In this paper we review THz radiation properties, generation methods, and antenna configurations. This paper suggests some new class of antennas that can be used at THz frequency, like optical antennas or Carbon nanotube antennas. THz technology has become attractive due to the low energy content and nonionizing nature of the signal. This property makes them suitable for imaging and sensing applications. But at the same time detection and generation of THz signals has been technologically challenging. This paper presents a comparative study of the generation techniques for THz frequency signals giving emphasis to the some new techniques like Quantum Cascade lasers which has created significant research interest. The main aim for this study is to find out the materials suitable for fabricating THz devices and antennas, a suitable method for generation of high power at THz frequency and an antenna that will make THz communication possible.     

太赫兹半导体探测器研究进展

太赫兹（THz）探测器是THz技术应用的关键器件之一．基于半导体的全固态THz量子阱探测器（THzQWIP）具有探测响应速度快、制作工艺成熟、体积小和易集成等优点．文章简要介绍了THz探测器的分类和特点，重点介绍了THzQWIP的工作原理和研究进展．     

Evaluation of nano-slot antenna for mid-infrared detectors

To improve the response performance of superconducting infrared detectors, we propose using a photonic antenna with a micro-detector in conjunction with a nano-structure. In this paper, we report evaluation results that show the basic characteristics of a photonic antenna in the mid-infrared region. The antenna consists of a nano-slot antenna and a thin-film load resistance placed in the center of the antenna. The antennas were designed for operation at approximately several tens of THz by using an electromagnetic simulator. Through measurements of the spectral reflectance characteristics, clear absorptions caused by the antenna properties were observed at approximately 50 THz, and high polarization dependencies were also observed. The results of the simulation qualitatively agreed with the results of the experiment. The effective area of the antenna was also evaluated and was found to be approximately 3.5 μm² at 54 THz.     

Analytical framework of small-gap photoconductive dipole antenna using equivalent circuit model

A compact planar antenna sources with on-chip fabrication and high directivity in order to achieve large depth-of-field for better image resolution is the prospective demand for THz imaging application. Therefore, the small-gap photoconductive dipole antennas have been explored to fulfil such applications demand. However, there are certain modalities for improving the photoconductive dipole antenna performance which need to identify to accomplish high THz average radiated power and improved total efficiency. The unit-cell small-gap photoconductive dipole antenna radiation power enhancement methods need to optimize the design parameters with photoconductive material selection from theoretical simulation. Further, the potential improvement of coupling efficiency of THz wave with air as well as femto-second laser incident efficiency is also important parameters to enhance the radiation power of small-gap photoconductive dipole antenna. In this paper, we have presented an analytical procedure employing explicit mathematical expression leading to the physical behaviour of small-gap photoconductive dipole antenna. The effects of biased lines on the antenna performance parameters are discussed with the help of proposed equivalent circuit model. We have explored the effect of gap-size on the THz radiated power and on total radiation efficiency from the proposed photoconductive dipole antennas.     

Millimeter wave twin slot antennas on layered substrates

We have constructed a planar, monolithic twin slot antenna integrated with a bismuth microbolometer detector for operation near 94 GHz. In this paper, we briefly discuss the theory of operation for planar antennas on a dielectric stack. We then cover the fabrication details, including a short discussion of a photoresist bridge technique used to fabricate the microbolometer detectors. Measured receiver gain beam patterns are then compared with theoretical patterns for a number of cases.This work was supported by the National Science Foundation under grant number ECS-8552868 and by the Joint Services Electronic Program under grant number AFOSR 49620-89-0044.     

Millimeter-wave imaging using FET detectors integrated with printed circuit antennas

The application of field effect transistor (FET) detectors integrated with planar twin dipole microstrip antennas to millimeter-wave imaging has been demonstrated. Circuits were configured as practical heterodyne mixers, as elements in a 2×3 element planar focal plane array for imaging, and as receivers in frequency modulated (FM) radars for three-dimensional imaging, at 63 GHz. These experiments show that quasioptical circuits, using conventional present-day FETs and simple printed circuit construction, can be applied usefully in the millimeter-wave region.     

NOVEL TERAHERTZ PHOTOCONDUCTIVE ANTENNAS

The photoconductive (PC) antenna is a key device for the recent terahertz (THz) photonics based on laser-pumped generation and detection of THz radiation. In this paper we report on two new types of PC antennas: the Schottky PC antenna and the multi-contacts PC antenna. The former one is able to detect THz radiation intensity without the time-delay scan and useful for applications where spectroscopic information is not important, such as the THz intensity imaging. The latter one is useful for the polarization sensitive THz spectroscopy, such as the THz ellipsometry. The characteristic features of these new types of PC antennas are studied by using a THz time-domain spectroscopy system.     

Integrated nanostrip dipole antennas for coherent 30 THz infrared radiation

We report on the experimental study of infrared nanostrip dipole antennas which are connected to thin-film nanometer Ni-NiO-Ni diodes. The integrated Ni-NiO-Ni diodes are used to detect 30 THz (10 µm) CO₂-laser radiation.The diodes are deposited on 385 µm silicon substrates which are covered with a layer of 1.6 µm SiO₂ on both sides. We have found that in low-power applications 1.6 µm of SiO₂ yields excellent quarter-wave matching layers for wavelengths centered at ₀ = 10.8 µm. By this method 79% of the incident CO₂-laser radiation is transmitted into the Si substrate compared to 48% without SiO₂ layer. The use of SiO₂ quarter-wave matching layers considerably improves the efficiency of infrared nanostrip dipole antennas. This has been confirmed by the study of the laser-induced response of the Ni-NiO-Ni diode detectors as a function of the lengthL of the dipole antenna. Thus, we have observed that the laser-induced response strongly increases for shorter antennas and exhibits a distinct maximum atL=2.8 ± 0.3 µm. For the first time, we have investigated the 30 THz radiation patterns of nanostrip dipole antennas of different lengths. On this occasion, we have observed that the radiation pattern changes when the lengthL of the dipole antenna is varied. This observation indicates that antenna currents propagate on the nanostrip dipole antenna.     

Terahertz spectroscopy with a Josephson oscillator and a SINIS bolometer

The voltage response of a thin-film normal-metal hot-electron bolometer based on a SINIS (superconductor-insulator-normal metal-insulator-superconductor) structure to the radiation of a high-temperature Josephson junction in the terahertz frequency region was measured. Bolometers were integrated with planar log-periodic and double-dipole antennas, and Josephson junctions were integrated with log-periodic antennas. Measurements showed that the Josephson junction at a temperature of 260 mK was overheated by the transport current, so that its electron temperature exceeded 3 K at a bias voltage of 1 mV. The maximum response of a bolometer with a double-dipole antenna was observed at a frequency of 300 GHz, which agreed well with the calculated value. The Josephson radiation was observed at frequencies up to 1.7 THz. The voltage response of a bolometer reached 4×10⁸ V/W, and the total noise-equivalent power reached 1.5×10^?17 W/Hz^1/2.