Dielectric spectroscopy of ultrathin ferroelectric polymer films

The dielectric dispersion of poly(vinylidene fluoride-trifluoroethylene) copolymer films prepared using the Langmuir-Blodgett technique is studied. All films of different compositions and thicknesses undergo a Debye-type dielectric relaxation. The phenomenon of critical slowing down is investigated. It is found that the relaxation time τ and the kinetic coefficient ξ depend on the thickness of the film.     

半花菁有序超薄膜热释电效应的产生机理

利用Langmuir-Blodgett技术制备的半花菁有机分子超薄膜中存在电滞回线和热释电效应．通过电荷积分法测量其热释电系数在室温下约为12μC·m^-2·K^-1．利用偏振红外吸收光谱研究了有机超薄膜中半花菁分子取向结构随温度变化的关系．讨论了热释电性产生的微观机理. 关键词：     

纳米晶聚合物复合薄膜PbTiO3-PEK-c的电光特性及其弛豫过程的研究

制备了掺杂型纳米晶聚合物钛酸铅聚醚醚酮 (PbTiO3 PEK c)复合薄膜 ,采用简单透射技术测量了该复合薄膜的线性电光系数 ,并研究了该复合薄膜的电光特性的弛豫过程     

压力对纳米金刚石膜生长的影响

纳米金刚石膜具有高耐磨能力和低摩擦系数,在多个领域有广阔的应用前景。纳米金刚石膜可通过热丝化学气相沉积方法进行制备。其中,系统压力是关键的参数,适当的压力下可生长纳米金刚石膜,而改变压力则金刚石膜的表面形态将发生变化。实验通过不同压力下制备金刚石膜,采用扫描电镜进行形貌观察,并通过拉曼光谱确定纳米金刚石结构。实验表明,金刚石膜形态随压力变化而改变,一定压力下生长出纳米金刚石膜,降低压力则晶体颗粒变粗。分析其原因是与氢原子的运动密切相关。     

高能氮离子轰击对四面体非晶碳膜的表面改性和摩擦系数影响的研究

利用过滤阴极真空电弧技术制备了sp³键含量不小于80%的四面体非晶碳(ta-C)膜.利用冷阴极潘宁离子源产生不同能量的氮离子对制备的ta-C薄膜进行轰击,通过X射线光电子能谱和原子力显微镜对薄膜表面结构与形貌进行分析研究.研究表明,随着氮离子的轰击能量的增大,薄膜中的CN键结构略有增大,形成了轻N掺杂;同时,在薄膜表层发生了sp³键结构向sp²键结构的转化;薄膜的表面粗糙度在经过氮离子轰击后从0.2 nm减小至0.18 nm,然后随着轰击能 关键词： 四面体非晶碳 X射线光电子能谱 摩擦系数     

采用表面等离子激元波技术测定LB膜的光学参数

利用表面等离子激元波技术来测定极薄膜层的光学参量是相当灵敏的,但拟合计算结果往往会得到两组不确定的解。本文报道一种采用Otto耦合结构、通过测量相对于空气隙厚度变化取最小的反射率来唯一确定介质膜层复介电常数和厚度的方法。文章最后给出3对具有不同分子层数的Langmuir-Blodgett膜的测试结果。     

Large nonlinear optical response of polycrystalline Bi3.25La0.75Ti3O12 ferroelectric thin films on quartz substrates

We measure the nonlinear susceptibility of Bi(3.25)La(0.75)Ti(3)O(12) (BLT) thin films grown on quartz substrates using the Z-scan technique with picosecond laser pulses at a wavelength of 532 nm. The third-order nonlinear refractive index coefficient gamma and absorption coefficient beta of the BLT thin film are 3.1 x 10(-10) cm(2)/W and 3 x 10(-5) cm/W, respectively, which are much larger than those of most ferroelectric films. The results show that the BLT thin films on quartz substrates are good candidate materials for applications in nonlinear optical devices.     

聚丁二炔Langmuir-Blodgett薄膜的光声谱研究(Ⅰ)结构表征与光声吸收系数

本文在用Ｘ－射线小角衍射对聚合与转载先后次序不同的ＰＤＡＬＢ膜进行结构表征的基础上,不同厚度ＰＤＡＬＢ膜的光声斩波频率效应说明,随着ＰＤＡＬＢ膜厚度增加,ＬＢ膜的热学性质逐渐明显。此外,还探讨了如何从ＰＤＡＬＢ膜的光声谱求得光声吸收系数问题,本文的研究结果表明,光声谱技术是研究ＬＢ膜热学特性的有效手段。     

Size dependence of non-linear optical properties of SiO2 thin films containing InP nanocrystals

SiO₂ composite thin films containing InP nanocrystals were fabricated by radio-frequency magnetron co-sputtering technique. The microstructure of the composite thin films was characterized by X-ray diffraction and Raman spectrum. The optical absorption band edges exhibit marked blueshift with respect to bulk InP due to strong quantum confinement effect. Non-linear optical absorption and non-linear optical refraction were studied by a Z-scan technique using a single Gaussian beam of a He-Ne laser (632.8 nm). We observed the saturation absorption and two-photon absorption in the composite films. An enhanced third-order non-linear optical absorption coefficient and non-linear optical refractive index were achieved in the composite films. The nonlinear optical properties of the films display the dependence on InP nanocrystals size. Received: 27 June 2000 / Accepted: 27 June 2000 / Published online: 13 September 2000     

Low reflectance sputtered vanadium oxide thin films on silicon

Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100–700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200–2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.     

聚丁二炔Langmuir—Blodgett薄膜的光声谱研究：（Ⅰ）结构表征与光声？…

本在用Ｘ－射线小角衍射聚合与转载先后次序不同的ＰＤＡ ＬＢ膜进行结构表征的基础上,不同厚度的ＰＤＡ ＬＢ膜的光声新斩波频率效应说明,随着ＰＤＡ ＬＢ膜厚度增加,ＬＢ膜的热学性质逐渐明显。此外,还探讨了如何从ＰＤＡ ＬＢ膜的光声谱求得光声吸收系数问题,本的研究结果表明,光声谱技术是研究ＬＢ膜热学特性的有效手段。     

氢化硅薄膜光吸收近似特性研究

利用等离子体化学气相沉积系统在直流电压源和射频源的双重激励下,以康宁7059玻璃为衬底制备了氢化硅薄膜．过测定氢化硅薄膜Raman光谱,对薄膜微结构进行了表征;建立氢化硅薄膜的光吸收模型,计算出薄膜的光吸收系数和光学带隙,和实验结果基本一致,说明该模型符合实验结果;并利用该模型计算的光吸收系数和光学带隙,结合AMPS软件对设计的太阳电池结构进行了模拟,给出的I-V特性曲线变化趋势与实验结果基本符合,同时对实验结果与模拟结果存在差异的原因进行了分析,并给出合理解释． 关键词： 氢化硅薄膜 光吸收系数 光吸收模型     

Preparation and optical properties of barium titanate thin films

Barium titanate (BTO) films were prepared by sol-gel spin-coating technique. The crystal structure and optical properties of BTO films have been investigated. The results indicate that the BTO films are single perovskite phase having tetragonal symmetry. The band gap of the BTO films increases with the increasing of layer number and decreasing of solution concentration. The transmittance and band gap of the BTO films annealed at 900 °C is more than that of the BTO films annealed at 700 °C when wavelength is 200-1000 nm. When wavelength is 400-1000 nm, the absorption coefficient α obtained by experiment is higher than that obtained by calculation (close to zero).     

射频磁控溅射制备氧化钒薄膜的研究

氧化钒（VOx）薄膜是一种广泛应用于红外热成像探测的薄膜材料,研究VOx薄膜的制备工艺、获取高电阻温度系数（TCR）的VOx薄膜具有重要意义。以高纯金属钒作靶材,采用射频磁控溅射的方法在室温下制备了VOx薄膜。主要研究了氩氧流量比以及功率等工艺参数对薄膜TCR的影响,获得了较好的工艺参数。采用万用表和X射线光电子能谱仪（XPS）分别测试了不同条件下射频磁控溅射法制备的VOx薄膜的电阻特性和薄膜成分,测试结果表明,采用所获得的较好工艺参数制备的VOx薄膜TCR值大于1.8%。     

Annealing Effects on the Structural and Optical Properties of Thermally Deposited Tin Antimony Sulfide Thin Films

We report the deposition and characterization of tin antimony sulfide thin films on a soda glass substrate by a thermal evaporation technique. The thin films were annealed in argon gas at 150, 175, and 300 °C inside glass ampoules. The structural and optical properties of the deposited and annealed films are investigated. X-ray diffraction (XRD) patterns show that the films are polycrystalline in structure. Photoconductivity plot revealed good response in the NIR and visible regions, while the films show no transmittance below 700 nm. The absorption coefficient was of the order of 10⁶ cm^?1. Optical band gaps were also evaluated and a decrease in band gap was observed due to annealing. Hot point probe technique was employed for type of conductivity.     

Thin film piezoelectric response characterisation using atomic force microscopy with standard contact mode imaging

This article introduces a technique for observing and quantifying the piezoelectric response of thin films, using standard atomic force microscopes (AFMs). The technique has been developed and verified using strontium-doped lead zirconate titanate (PSZT) thin films, which are known for their high piezoelectric response. Quantification of the electro-mechanical voltage coefficient d(33) (pm/V) is made directly based on the applied peak-to-peak voltage and the corresponding peak-to-peak displacement in the obtained scan image. Under the proposed technique the AFM is configured in contact mode, where the silicon nitride tip is set to follow the film displacement at a single point. A known sinusoidal voltage is applied across the film and the displacement determined as a function of time, rather than the typical AFM measurement of displacement versus tip position. The resulting raster image contains several bands, which are directly related to the AFM scan frequency and the applied sinusoidal voltage and its frequency. Different combinations of the AFM scan frequency and the applied sinusoid frequency have been used to characterise the PSZT thin films, with estimated values of d(33) between 109 and 205 pm/V.     

Effects of copper concentration on electro-optical and structural properties of chemically deposited nanosized (Zn-Cd)S:Cu films

Nanocrystalline (Zn-Cd)S films have been co-deposited on glass slide substrates by chemical bath deposition (CBD) technique at 70 °C for 75 min. Electroluminescent (EL), photoluminescent (PL) and structural characteristics of these films doped with Cu have been investigated. Cu doping has significant effects on the growth, structural and optical properties of the deposited (Zn-Cd)S films. EL studies show the essentiality of copper for EL emission. The effect of Cu concentration is examined on XRD, SEM, UV-vis spectroscopy, etc. The morphology of these films investigated with SEM and XRD is used to determine crystalline nature of the films. The optical absorption coefficient of the films has been found to increase with increase in Cu concentration. Voltage and frequency dependence shows the effectiveness of acceleration-collision mechanism. The trap-depth values are calculated from temperature dependence of EL brightness.     

Reflectometry technique for studying metal nanolayers on a substrate

A new noncontact technique is proposed for determining the parameters of nanosized metal coatings (absorption coefficients, refractive indices, and thicknesses). It is based on processing the measured angular dependence of the energy reflection coefficient of a polarized laser beam reflected by a thin-film structure surface. Features of determining the parameters of films on silicon substrates have been considered.     

纳秒激光作用下二氧化钒薄膜相变特性

采用脉冲激光沉积法制备了VO2薄膜,应用X射线衍射和X射线光电子能谱分析表明样品为多晶薄膜。采用泵浦-探针方法研究了二氧化钒薄膜的相变特性,实验结果表明当激光重复频率为160 Hz时,样品最小相变响应为12ns,相变恢复时间与激光能量按照自然指数关系变化。仿真结果表明当激光能量一定时,二氧化钒薄膜相变恢复时间与衬底材料的热导率、热扩散系数有关。     

Optical and structural analysis of plasma-treated and annealed Al–Sb bilayer thin films

Aluminum–antimony (Al–Sb) seems to be a promising semiconducting material for high-temperature application especially for transistors and P–N junction diodes and is a highly coefficient solar material. No attempt has been made to study the bilayer diffusion properties of Al–Sb thin film by plasma exposure. In this paper, the characterization of plasma-exposed Al–Sb bilayer thin films is presented. Thin films were coated by thermal vapor coating technique, and after coating, the sample was annealed and exposed with plasma. Results were obtained from optical band gap data and X-ray diffraction for treated and untreated Al–Sb thin films, and these results were compared with annealed Al–Sb thin films.