溶胶-凝胶法制备氧化锌薄膜的压电行为

"采用溶胶-凝胶技术在单晶硅Si(111)上制备了ZnO压电薄膜,并以扫描电镜、X射线衍射仪(XRD)和原子力显微镜(AFM)进行了表征．XRD衍射实验表明ZnO薄膜随着膜厚的增大,其(002)取向逐渐增强;AFM研究了薄膜的表面形貌、粗糙度与晶粒大小的结果表明,ZnO压电薄膜的粗糙度与晶粒寸随着薄膜厚度的增大而减小．粗糙度为2.188~0.914 nm．利用PFM研究压电系数,发现随着薄膜厚度的增加,(002)生长方向增强,压电系数逐渐增大;当力参数小于薄膜的表面粗糙度时,压电系数测量不准确且在较大幅度     

Structure and ferro-/piezoelectric properties of bimorph-shape CaBi4Ti4O15 films on Pt foils

In-plane c-axis oriented CaBi₄Ti₄O₁₅ (CBTi144) films were fabricated on Pt foils using a complex metal alkoxide solution. The a/b-axis orientation of the ferroelectric films was affected by the preferred orientation of Pt foil, which is associated with the thickness. The 500 nm-thick CBTi144 films showed good ferro- and piezoelectric properties on 0.010 mm-thick Pt foils. The Pr and Ec were 26 C/cm² and 230 kV/cm, respectively, at an applied voltage of 75 V. The d₃₃ was characterized as 25–34 pm/V by piezoresponse force microscopy. The values enhanced compared to those of the CBTi144 thin film with random orientation. The polar-axis oriented CBTi144 films would open for novel devices as Pb-free piezoelectric materials. PACS 77.84.-s; 68.37.-d; 81.15.-z     

Nanoscale imaging of surface piezoresponse on GaN epitaxial layers

Surfaces of GaN films were investigated by atomic force microscopy (AFM) with implemented piezoelectric force microscopy technique. A model of PFM based on the surface depletion region in GaN films is discussed. The local piezoelectric effect of the low frequency regime was found to be in phase with the applied voltage on large domains, corresponding to a Ga-face of the GaN layer. Low piezoresponse is obtained within the inter-domain regions. The use of frequencies near a resonance frequency enhances very much the resolution of piezo-imaging, but only for very low scanning speed the piezo-imaging can follow the local piezoelectric effect. An inversion of the PFM image contrast is obtained for frequencies higher than the resonance frequencies. The effect of a chemical surface treatment on the topography and the piezoresponse of the GaN films was also investigated. Textured surfaces with very small domains were observed after the chemical treatment. For this kind of surfaces, piezo-induced torsion rather than bending of the AFM cantilever dominates the contrast of the PFM images. A small memory effect was observed, and explained by surface charging and confinement of the piezoelectric effect within the carrier depletion region at the GaN surface.     

Multiferroic and resistive switching behaviors in BiFe0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates

Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe_0.95Cr_0.05O₃ (BFCO) thin films grown on Pt/Ti/SiO₂/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d _33,f ～55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.     

Piezoelectric non-linearity in PbSc0.5Ta0.5O3 thin films

Epitaxial (001)-oriented PbSc_0.5Ta_0.5O₃ (PST) thin films were deposited by pulsed laser deposition. Local piezoelectric investigations performed by piezoelectric force microscopy show a dual slope for the piezoelectric coefficient. A piezoelectric coefficient of 3 pm/V was observed at voltages up to 0.8 V. However, at voltages above 0.8 V, there is a steep increase in piezoelectric coefficient mounting to 23.2 pm/V. This nonlinear piezoelectric response was observed to be irreversible in nature. In order to better understand this nonlinear behavior, voltage dependent dielectric constant measurements were performed. These confirmed that the piezoelectric non-linearity is indeed a manifestation of a dielectric non-linearity. In contrast to classical ferroelectric systems, the observed dielectric non-linearity in this relaxor material cannot be explained by the Rayleigh model. Thus the dielectric non-linearity in the PST films is tentatively explained as a manifestation of a percolation of the polar nano regions.     

Nonlinearity in inverse and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 film actuators under AC and DC applied voltages

The motion of domain walls is a crucial factor in piezoelectric properties and is usually related to the irreversible and hysteretic behaviors. Herein, we report on the investigation of inverse and transverse piezoelectric coefficients of capacitor-based and microcantilever-based Pb(Zr_0.52Ti_0.48)O₃ films with a change in the DC bias and the AC applied voltage. A large inverse piezoelectric strain coefficient of about 350 p.m./V, and a low strain hysteresis of about 7.1%, are achieved in the film capacitors under a low applied voltage of 2 V (20 kV/cm) which can benefit the actuators for motion control in high-precision systems. The field-dependences of the transverse piezoelectric coefficients, obtained from four-point bending and microcantilever displacement, are in good agreement with each other. The results also reveal that the irreversible domain-wall motion is attributed to the nonlinearity in the field-dependent piezoelectric strain and cantilever displacement.     

基于FTO/VO2/FTO结构的VO2薄膜电压诱导相变光调制特性

采用直流磁控溅射和后退火工艺在掺氟的SnO₂(FTO)导电玻璃衬底上制备VO₂薄膜, 研究了不同退火时间和不同比例的氮氧气氛对VO₂薄膜性能的影响, 对VO₂薄膜的结晶取向、表面形貌、表面元素的相对含量和透过率随波长变化进行了测试分析, 结果表明在最佳工艺条件下制备得到了组分相对单一的VO₂薄膜. 基于FTO/VO₂/FTO结构在VO₂薄膜两侧的透明导电膜上施加电压并达到阈值电压时, 观察到了明显的电流突变. 当接触面积为3 mm×3 mm时, 阈值电压为1.7 V, 阈值电压随接触面积的增大而增大. 与不加电压的情况相比, FTO/VO₂/FTO结构在电压作用下高低温的红外透过率差值可达28%, 经反复施加电压, 该结构仍保持性能稳定, 具有较强的电致调控能力.     

Large piezoresponse of lead-free Bi0.5(Na0.85K0.15)0.5TiO3 thin film

0.85Bi_0.5Na_0.5TiO₃-0.15Bi_0.5K_0.5TiO₃ (BNKT15) lead-free thin films were prepared on Pt(111)/TiO₂/SiO₂/Si(100) substrates by the chemical solution deposition method. BNKT15 are MPB composition in the Bi_0.5Na_0.5TiO₃-Bi_0.5K_0.5TiO₃ (BNT-BKT) system. The maximum piezoelectric coefficient (d_33,f) value of BNKT15 thin film is approximately 75 pm/V, which is comparable to that of polycrystalline PZT thin films. These results suggest that BNKT15 thin film can be used as an alternative for PZT films in piezoelectric micro-electromechanical systems.     

Magnetic properties and structure of electrodeposited Zn-Co alloys granular thin films

We present several results concerning the preparation by means of electrolysis and characterization of Zn-Co alloys thin films. Films of Zn, Co and Zn-Co with various compositions (8-16 at% Co) were prepared in sulfate baths, using potentiostatic control, envisaging applications in the domain of corrosion resistant magnetic sensors. The effects of applied voltage on the magnetic properties, microstructure and phase content of the electrodeposited Zn-Co films were investigated. The applied voltage significantly influenced the film composition and their magnetic properties. These films, when deposited at an applied voltage of 4.5 V exhibited multiphase behavior due to the inclusion of new phases (cobalt hydroxide), whereas at 3.0 V, only Zn-Co alloys were deposited. The structure and morphology of the samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM).     

Piezoelectric evaluation of ion beam etched Pb(Zr,Ti)O3 thin films by piezoresponse force microscopy

The evolution of piezoelectric properties of Pb(Zr,Ti)O₃ (PZT) thin films after ion beam etching have been investigated at the nanoscale level by piezoelectric force microscopy. A comparison of the piezoelectric properties on etched and unetched films is realized. Piezoelectric contrasts imaging evidences a modification of the domain architecture at the film surface. Local piezoelectric hysteresis loops measurements on grains indicate that the coercive voltage for switching is much higher for the etched films (2.3 V) compared to the unetched ones (1.0 V) while the average piezoelectric activity is slightly lower. The results are explained in terms of grain-damaging during etching and domain-wall pinning.     

Evaluation of the contact resonance frequencies in atomic force microscopy as a method for surface characterisation (invited)

The combination of ultrasound with atomic force microscopy (AFM) opens the high lateral resolution of scanning probe techniques in the nanometer range to ultrasonics. One possible method is to observe the resonance frequencies of the AFM sensors under different tip-sample interaction conditions. AFM sensors can be regarded as small flexible beams. Their lowest flexural and torsional resonance frequencies are usually found to be in a range between several kHz and several MHz depending on their exact geometrical shape. When the sensor tip is in a repulsive elastic contact with a sample surface, the local indentation modulus can be determined by the contact resonance technique. Contact resonances in the ultrasonic frequency range can also be used to improve the image contrast in other dynamic techniques as, for example, in the so-called piezo-mode. Here, an alternating electric field is applied between a conducting cantilever and a piezoelectric sample. Via the inverse piezoelectric effect, the sample surface is set into vibration. This excitation is localised around the contact area formed by the sensor tip and the sample surface. We show applications of the contact resonance technique to piezoelectric ceramics.     

Two-step sputtered ZnO piezoelectric films for film bulk acoustic resonators

This study investigates high-performance ZnO piezoelectric films used for thin film bulk acoustic resonators (TFBAR). The ZnO piezoelectric film was deposited on a Pt/Ti electrode using an RF magnetron sputter by a two-step method at room temperature. The Pt/Ti electrode was deposited by a DC sputtering system, on which, ZnO piezoelectric films were deposited in one step and in two steps to minimize roughness in the first step and produce the preferred orientation in the second. Both field-emission scanning electron microscopy (FESEM) and atom force microscopy (AFM) revealed that ZnO piezoelectric film deposited by two-step sputtering exhibited favorable characteristics, such as a rigidly precise surface structure with surface roughness of 7.37 nm, even better than in one-step sputtering. Examining the ZnO thin film by X-ray diffraction (XRD) showed a much higher c-axis-preferring orientation than in one-step sputtering. The reflection coefficient of the resonator device was measured using an HP8720 network analyzer. The frequency response of the FBAR device exhibited a return loss of -25 dB at a resonant frequency of 2212 MHz with a high coupling coefficient of 6.7%. PACS 68.55.Jk; 43.35.Ns; 81.15.-z     

射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管

利用射频磁控溅射技术室温制备了铟镓锌氧(IGZO)薄膜,采用X射线衍射(XRD)表征薄膜的晶体结构,原子力显微镜(AFM)观察其表面形貌,分光光度计测量其透光率。结果表明:室温制备的IGZO薄膜为非晶态且薄膜表面均匀平整,可见光透射率大于80%。将室温制备的IGZO薄膜作为有源层,在低温(<200℃)条件下成功地制备了铟镓锌氧薄膜晶体管(a-IGZO TFT),获得的a-IGZO-TFT器件的场效应迁移率大于6.0 cm2.V-1.s-1,开关比约为107,阈值电压为1.2 V,亚阈值摆幅(S)约为0.9 V/dec,偏压应力测试a-IGZO TFT阈值电压随时间向右漂移。     

Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications

This paper focuses on the deposition and electromechanical characterization of lanthanum-doped lead hafnate titanate (PLHT) thin films as key material in piezoelectric microelectromechanical systems (pMEMS). PLHT (x/30/70) and PLHT(x/45/55) films with a thickness between 150 nm and 250 nm were deposited by chemical solution deposition (CSD). Thereby x varies between 0 and 10% La content. The electrical characterization shows that undoped (x=0) PLHT exhibit ferroelectric behavior similar to PZT of the same composition. La doping results in reduced ferroelectric properties and also affects the electromechanical properties. Measurements using a double beam laser interferometer yield a piezoelectric coefficient d ₃₃ of 60 pm/V, which stays constant with an increasing electric field. This leads to a linear displacement compared to undoped PLHT or conventional PZT films used for MEMS applications.     

铁电SBN薄膜电光系数的测量及其在波导中的应用

利用溶胶-凝胶法在MgO(001)衬底上获得C轴择优取向的铁电铌酸锶钡(SBN)薄膜,主要介绍MgO(001)衬底上SBN60薄膜及掺入的K离子与Nb离子摩尔比例为1：3的SBN60薄膜横向电光系数r51的测量,实验测得不掺K的SBN60薄膜r51值为37．6pm／V,掺K的r51值为58．5pm／V。并由此设计一种基于MgO(001)衬底上的马赫一曾德尔型SBN60薄膜波导调制器,计算出在633nm时,掺K比例为1：3的此种波导调制器半波调制电压值为10V,不掺K的半波电压值为16V,结果说明掺入K离子能增加薄膜的横向电光系数并有效的减少波导的半波调制电压。     

A novel drum piezoelectric-actuator

This paper presents a large displacement, piezoelectric-metal structure actuator, named the piezoelectric drum actuator. The drum actuator consists of a short, thick-walled steel cylinder sandwiched by two thin composite disks, which are fabricated from a brass disk bonded with a piezoceramic disk. The piezoceramic disk, which is polarized in its thickness direction, has a large diameter thickness ratio, producing a large radial displacement under an applied voltage in the thickness, leading to a large transverse deflection of the composite disks in the drum. The drum (outer diameter: 12.0 mm) has a displacement that is about eight times larger than that of a cymbal actuator made with the same ceramic material and comparable dimensions under the same dc driving voltage of 270 V. The drum actuator also showed a large resonance displacement of 56.7 μm under an ac voltage of 90 V. The effective piezoelectric charge coefficient d’₃₃ of the drum is about twice as large as that reported for the cymbal. PACS 77.65 -j; 85.50.+k; 43.38.fx     

Dielectric and piezoelectric properties of the Ba0.92Ca0.08Ti0.95Zr0.05O3 thin films grown on different substrate

Lead free Ba_0.92Ca_0.08Ti_0.95Zr_0.05O₃ (BCZT) thin films were deposited on Pt/Ti/SiO₂/Si and LaNiO₃(LNO)/Pt/Ti/SiO₂/Si substrates by a sol–gel processing technique, respectively. The effects of substrate on structure, dielectric and piezoelectric properties were investigated in detail. The BCZT thin films deposited on LNO/Pt/Ti/SiO₂/Si substrates exhibit (100) orientation, larger grain size and higher dielectric tunability (64%). The BCZT thin films deposited on Pt/Ti/SiO₂/Si exhibit (110) orientation, higher Curie temperature (75 °C), better piezoelectric property (d₃₃ of 50 pm/V) and lower dielectric loss (0.02). The differences in dielectric and piezoelectric properties in the two kinds of oriented BCZT films should be attributed to the difference of structure, in-plane stress and polarization rotation in orientation engineered BCZT films.     

High Accuracy and High Sensitivity Measurements of the Electrooptic Effect in Undoped and MgO-Doped LiNbO3 Crystals

Accurate measurements of the composite electrooptic (EO) coefficients r_c consisting of the EO coefficients r₁₃, r₃₃, and the piezoelectric constant d₃₁ in undoped and MgO-doped LiNbO₃ (LN) were made by extracting the fundamental and third harmonic components from photo-detection signals of the parallel Nicol optics including the LN crystal driven by minimal sinusoidal voltage. The analysis of relationship between multiple-reflection rays in the EO crystal and the accuracy of measurement indicates that anti-reflection films must be coated on the end faces of the crystal for highly accurate measurements. Measured values of r_c of undoped and MgO-doped LN crystals at a wavelength of 632.8 nm were 19.8 ± 0.1 pm/V and 19.2 ± 0.1 pm/V, respectively.     

The analysis of superconducting thin films modified by AFM lithography with a spectroscopic imaging technique

A practical application of nanolithography using atomic force microscopy (AFM) was accomplished in fabricating superconducting flux flow transistors (SFFTs). It was found that it is essential to oxidize a superconducting thin film, grown on LaAlO₃ substrates by a thermal CVD process, by an applied bias voltage between a conducting AFM tip and the films, since I/V characteristics of the device were mainly controlled by the modified gate area in the SFFT. After AFM lithography, the critical current of an YBCO thin film was found to be degraded. Raman lines in the modified YBCO film were observed at 340, 502, and 632 cm⁻¹ in Ar the laser system and 142, 225, and 585 cm⁻¹ in the He-Ne laser system. Raman fluorescence images were also produced by mapping the Raman peaks. A strain image of the peak at 142 cm⁻¹ was most clear, which means that a surface of the YBCO thin film was changed into the YBa₂Cu₃O₆ insulator. AFM nanolithography enables us to fabricate a channel between a source and a drain in SFFT in order to get I/V characteristics.