外磁场作用下的磁等离子体动力学过程仿真

磁等离子体动力学推力器是空间高功率电推进装置的典型代表,磁等离子体动力学过程是其核心工作机制.为深入理解外磁场对其工作特性的影响,本文采用粒子云(particle in cell,PIC)方法结合基于自相似准则的缩比模型,进行外加磁场作用下磁等离子体动力学推力器工作过程的建模仿真,通过与实验结果对比验证模型和方法的可靠性,并重点分析推力器点火启动过程的等离子特性参数分布,以及外磁场和阴极电流对推力器工作性能的影响.研究结果表明:阴阳极放电电弧构建是推力器启动和高效工作的关键步骤;外磁场强度较低工况不利于构建稳定放电电弧,等离子体束流集中于轴线附近,推力主要产生机制是自身场加速;外磁场强度较高时,阴阳极放电电弧稳定,推力产生主要机制是涡旋加速,推力、比冲随外磁场强度线性增大;推力器效率随阴极电流和外磁场强度增大而增大;放电电压随阴极电流增大而增大,但随外磁场强度的增大表现出先减小后增大的趋势.     

外磁场作用下的磁等离子体动力学过程仿真

磁等离子体动力学推力器是空间高功率电推进装置的典型代表,磁等离子体动力学过程是其核心工作机制.为深入理解外磁场对其工作特性的影响,本文采用粒子云(particle in cell,PIC)方法结合基于自相似准则的缩比模型,进行外加磁场作用下磁等离子体动力学推力器工作过程的建模仿真,通过与实验结果对比验证模型和方法的可靠性,并重点分析推力器点火启动过程的等离子特性参数分布,以及外磁场和阴极电流对推力器工作性能的影响.研究结果表明:阴阳极放电电弧构建是推力器启动和高效工作的关键步骤;外磁场强度较低工况不利于构建稳定放电电弧,等离子体束流集中于轴线附近,推力主要产生机制是自身场加速;外磁场强度较高时,阴阳极放电电弧稳定,推力产生主要机制是涡旋加速,推力、比冲随外磁场强度线性增大;推力器效率随阴极电流和外磁场强度增大而增大;放电电压随阴极电流增大而增大,但随外磁场强度的增大表现出先减小后增大的趋势.     

场致爆炸发射阴极有效发射面积研究

通过改变阴阳极间隙，得到在不同外加电场情况下，场致爆炸发射石墨阴极有效发射面积随时间变化的实验结果。结果表明，在起始的一定时间内，阴极有效发射面积随时间的增加而增大。阴极有效发射面积达到1.0的时间随阴阳极间隙内电场的增加而减小；当二极管阴阳极之间的平均电场约为100 kV/cm时，阴极有效发射面积达到1.0的时间约为20 ns；阴极有效发射面积相对电压波形的延迟时间随电场的变化近似呈指数衰减曲线。     

分段表面放电沉积效率研究

利用一种结构紧凑的分段表面放电辐射源模块，详细研究了在不同电压、电容、气压实验条件下回路等效电阻、等效电感及放电能量沉积效率的变化规律，利用四分幅相机拍摄获得了不同实验条件下的放电等离子体通道图像，分析讨论了放电等离子体运动对放电能量沉积效率的影响，提出了提高能量放电沉积效率的有效途径。     

Über den Gleichspannungsdurchschlag im Ultrahochvakuum

DC-breakdowns with arc-conditioned electrodes in vapour-free vacuum have been investigated with high temporal resolution. The breakdowns started always with a cathode flare, the ignition voltage of which was strongly correlated with prebreakdown field emission. The temporal development of gap plasma, discharge current and gap voltage during the breakdowns could be satisfactorily explained by the models of explosive electron emission and space-charge limited diode conduction. No change of mechanism was observed with gap distances up to 6 mm and voltages up to 120 kV. Generally the resistance of the discharge channel became low enough for a transition to the arc stage. However, in a few cases a self-limitation of the discharge occurred due to starvation of the material transfer from the cathode. At higher gap distances the surrounding walls had a distinct influence on the ignition of the discharges.     

Enhancement and stabilization of cathodic arc using mesh anode

The performance and characteristics of a cathodic arc deposition apparatus consisting of a titanium cathode, an anode with and without a tungsten mesh, and a coil producing a focusing magnetic field between the anode and cathode arc investigated. The arc voltage V_a is measured with a fixed arc current for an anode diameter of 40 mm. The relationship between V_a and the magnetic field B with and without a mesh is obtained. In addition, the relationship between the arc current I_a and V_c, the voltage to which the artificial transmission line was charged, is measured with and without the mesh to determine the minimum ignition voltage for the arc when the anode hole diameter is 40 mm. The arc resistance increases with the focusing magnetic strength B and decreases when using the mesh. Our results indicate that the high transparency and large area of the mesh allows a high plasma flux to penetrate the anode from the cathodic arc. The mesh also stabilizes the cathodic arc and gives better performance when used in concert with a focusing magnetic field     

回旋速调管双阳极磁控注入电子枪的设计与优化

 根据8 mm回旋速调管放大器对双阳极磁控注入电子枪的要求，分析了电极形状、阳极电压、磁场、注电流对电子注横纵速度比和速度零散的影响，并进行了粒子模拟。分析表明：这些因素可归根为电场和磁场的作用，阴极附近高的电场有助于提高横纵速度比和降低速度零散；而高的磁场及低的磁压缩比将降低横纵速度比，但对速度零散影响无明显规律。在此基础上通过优化电极形状、磁场分布、电流、第一阳极电压和第二阳极电压，模拟并试制出工作电压65 kV、电流12 A、磁场1.4 T的双阳极电子枪，得到的横纵速度比值为1.4，横向速度零散为4.5%， 为8 mm回旋速调管提供了稳定高质量的电子注。     

Generation of a submillisecond electron beam with a high-density current in a plasma-emitter diode under the conditions of open plasma boundary emission

The generation of a 250-μs-wide electron beam in a plasma-emitter diode is studied experimentally. A plasma was produced by a pulsed arc discharge in hydrogen. The electron beam is extracted from a circular emission hole 3.8 mm in diameter under open plasma boundary conditions. The beam accelerated in the diode gap enters into a drift space in the absence of an external magnetic field through a hole 4.1 mm in diameter made in the anode. The influence of electron current deposition at the edge of the anode hole on the beam’s maximum attainable current, above which the diode gap breaks down, is studied for different accelerating voltages and diode gaps. The role of processes occurring on the surface of the electrodes is shown. For an accelerating voltage of 32 kV, a mean emission current density of 130 A/cm² is achieved. The respective mean strength of the electric field in the acceleration gap is 140 kV/cm. Using the POISSON-2 software package, the numerical simulation of the diode performance is carried out and the shape of steady plasma emission boundaries in the cathode and anode holes is calculated. The influence of the density of the ion current from the anode plasma surface on the maximum attainable current of the electron beam is demonstrated.     

THE EFFECT OF MESH ANODE ON CATHODIC ARC IN FOCUSING MAGNETIC FIELD

The performance and characteristics of a cathodic arc deposition apparatus consisting of a titanium cathode, an anode with and without a tungsten mesh, and a coil producing a focusing magnetic field between the anode and cathode are investigated. The arc voltage V_a is measured with a fixed arc current. The relationship between V_a and the magnetic field B with and without a mesh is obtained. In addition, the relationship between the arc current I_a and V_c, the voltage to which the artificial transmission line was charged, is measured with and without the mesh to determine the minimum ignition voltage for the arc. The arc resistance increases with the focusing magnetic strength B and decreases when using the mesh. Our results indicate that the high transparency and large area of the mesh allows a high plasma flux to penetrate the anode from the cathodic arc. The mesh also stabilizes the cathodic arc and gives better performance when used in concert with a focusing magnetic field.     

High-voltage microwave-triggered switches

The operation of three types of experimental high voltage microwave-triggered switches developed by the University of St. Andrews and DRA Malvern is described. The POLOTRON and the microwave-triggered three-gap-switch (MTGS) are closing switches and the microwave-triggered tacitron, (MITTON) is a closing and opening switch. The switches are robust hydrogen thyratron type devices, with an annular geometry, where closure is achieved using microwave fields to ionize the low pressure gas within the switch. In the case of the MITTON, the switch is opened by the application of a negative bias voltage to a large area metal grid. The POLOTRON is designed for fast switching applications. Its annular geometry results in an inherent low inductance and anode fall-times of less than 3 ns have been measured for a cold-cathode POLOTRON at charging voltages up to 30 kV. The MTGS, also a cold cathode switch, was developed for use in the DUOTRON transient generator (a voltage doubler). Output voltages of up to 16 kV have been measured at repetition rates of 90 Hz. The MITTON has closing characteristics similar to the POLOTRON and anode voltage fall-times of less than 10 ns have been measured at voltages up to 16 kV. Opening times of 0.5 μs have been achieved with an anode voltage of 10 kV and current of 10 A     

数百千伏电压下杆箍缩二极管模拟

为了探索杆箍缩二极管(RPD)在冲击加载下物质低密度区成像应用中的可行性,开展了低电压(≤500 kV)运行条件下RPD箍缩物理特性模拟研究。基于Particle-in-cell(PIC)模拟方法,从二极管加载电压幅值、阴极盘厚度、阴阳电极孔径比等方面开展了二极管模拟,从电子箍缩效率、质子流、电子利用率、电场和磁场分布等角度对箍缩物理过程进行了分析。模拟表明:低电压运行条件下普通结构二极管电流较低,不能为电子提供足够的磁场力从而导致较低的电子箍缩效率;采用组合杆结构,并优化阳极杆到轫致辐射靶区的过渡区设计,是在低电压条件下实现小焦斑、高剂量辐射光源的值得探索的技术途径。     

超紧凑型飞秒电子衍射仪的设计

由于空间电荷效应的限制,产生百飞秒的极短电子脉冲是超快电子衍射技术的一大难点.同时,电子的穿透深度随着电子能量的增加而增加,而电子的散射几率却具有相反的规律.因而,除了时间分辨的提升,还需要可宽范围调节的电子能量以优化不同厚度样品对其的需求.基于此,提出并设计了一种新型超紧凑电子枪,结合均匀场阴极和可移动阳极的配置,可在10-125 kV加速电压范围内实现100 fs量级时间分辨率.通过优化设计高压电极轮廓,使得其轴上和整个阴极面的场增强因子在不同阴阳极间距下均小于约4%,从而保证了不同加速电压下最大轴上场强均可达10 MV/m量级,有效地抑制了电子脉冲的展宽效应;进一步将阳极小孔设计成可放置致密电镜载网的阶梯孔,一方面可将载网支撑的样品紧贴小孔后方放置,最大程度上缩短了电子从阴极到样品的时间弥散,同时也可以有效地减弱阳极孔对电子束的散焦效应,提升电子束的横向聚焦性能.     

金属表面镀高分子膜对真空击穿阈值的影响

探索提高金属表面真空击穿阈值的方法，对脉冲功率技术的发展和应用具有重要意义。在金属表面电子发射理论分析的基础上，采用有限元法计算阴极杆表面电场随二极管电压的变化规律，设计了实验系统，并开展了实验研究。实验对比了在脉宽约30 ns、阴极杆与阳极筒间隙12 mm时，钛合金TC4阴极杆在不同种类高分子膜（膜厚30～60 μm）下真空击穿阈值的变化情况。在表面粗糙度R_z（轮廓最大高度）为0.8 μm的TC4阴极杆表面分别镀环氧树脂膜和丙烯酸膜，实验结果表明，镀丙烯酸膜阴极杆的击穿阈值约505 kV/cm，相对于不镀膜阴极杆，击穿场强提高了约20.6%；在表面粗糙度R_z为0.2 μm的TC4阴极杆表面分别镀聚酰亚胺膜和聚醚醚酮膜，实验结果表明，镀聚酰亚胺膜阴极杆的击穿阈值为584 kV/cm，相对于不镀膜阴极杆，击穿场强提高了约28.1%。因此，在金属表面镀丙烯酸膜、聚酰亚胺膜可以有效提高金属表面的真空击穿阈值。     

Voltage of the vacuum arc with a ring anode in an axial magneticfield

The plasma jet focusing and voltage distribution in the interelectrode gap of a vacuum arc with a ring anode and subjected to an axial magnetic field were studied theoretically. A two-dimensional model was developed based on the free plasma jet expansion into vacuum, and the steady-state solution of the fully ionized plasma in the hydrodynamic approximation was analyzed. It was found that the imposition of an axial magnetic field reduces the radial expansion of the plasma jet. The characteristic jet angle decreases from about 40° in the zero magnetic field case and approaches a value of about 20° with a 0.02 T magnetic field. The arc voltage consisting of the cathode drop, the plasma voltage drop, and anode sheath drop increased, with the imposition of a magnetic field, and decreased with the anode length. The model was compared to experimental measurements of the vacuum arc voltage behavior in an axial magnetic field, and good agreement was found     

The effect of an axial external magnetic field on the output power of a small-bore CuBr laser

In this work, the effect of an axial external moveable magnetic field on the output power of a CuBr laser with small-bore tube has been investigated. In all experiments, by applying an EMF along the tube axis, the laser output power has been decreased and by moving the EMF toward the cathode region, more substantial decrease of output power has been observed. The effect is more significant at a magnetic field intensity of 1100 G, Ne gas pressure of 35 Torr, frequency of 19 kHz and voltage of 3.8 kV, such that there was no laser emission when the EMF was placed around the cathode.     

太赫兹源场致发射电子源

通过粒子模拟(PIC)软件模拟计算了在ps级别下二极与三极结构碳纳米管场致发射的电流密度与电子注聚焦性能。阳极电压在2 kV时,二极结构下电流密度达到1.85 A/cm2;三极结构下,栅压700 V时发射电流密度达到2.3 A/cm2,且在一定的三极结构参数与电极电压下,可以获得较好的电子注聚束效果。通过碳纳米管二极管发射实验,获得了6.6 A/cm2的发射电流密度,总发射电流达到52.1 mA,可以为太赫兹器件提供连续发射的电子注。     

碳纤维阴极的场致发射特性实验研究

 研究了具有一定导电性能的碳纤维的直流场致发射电子束特性，实验分别在大气环境、低真空（10^-1 Pa）及高真空(10^-5 Pa)环境下进行。实验结果表明，碳纤维具有一定的场致发射能力，并且发射特性和发射环境的真空度密切相关。在大气环境下，发射电子束流与所施加的电压符合Fowler-Nordheim关系，当电压为7 kV，电流为61.4 μA时，根据Fowler-Nordheim定理推算出碳纤维场致发射场增强因子为3.75×10⁵。在低真空条件下阳极只收集到微弱的电流；在高真空条件下，阴极发射明显，在较低电压下就能观测到阳极电流，放电前阳极最高电流是大气条件下的3~4倍，发射的束流大小和所施加在尖端的电压关系接近Child-Langmiur定律。     

3.5 MeV注入器脉冲功率系统

用于直线感应加速器的3.5 MeV注入器脉冲功率系统采用了感应叠加原理。整个系统包含了脉冲形成系统、触发系统以及感应腔负载。脉冲形成系统主要由Marx发生器和Blumlein脉冲形成线组成，产生12个脉宽约90 ns，幅度约200 kV的高压脉冲，通过12个感应腔和变阻抗阴阳极杆，在阴阳极间隙处产生3.5 MV的二极管电压，由天鹅绒阴极发射强流电子束。触发系统主要由两级触发开关构成，严格控制12个高压脉冲的输出时间，时间分散性统计值小于1 ns(动作时间抖动)。采用该脉冲功率系统注入器能产生能量约3.5 MeV，电流2～3 kA的强流电子束。     

大回旋电子束双磁会切电子枪的设计

 分析了Ka波段二次谐波回旋行波管双磁会切电子枪的理论模型，计算了电子枪的设计参数；采用EGUN软件进行模拟，设计出了产生大回旋电子束的双磁会切电子枪。该枪电压为70 kV，电流为3.35 A，电子束横纵速度比为1.62，速度零散为4.2%。给出了电子束速度比、速度零散沿轴线的分布，进而讨论了阳极电压对电子束性能的影响，结果表明选择适当的阳极电压和阴极磁场对得到好的电子束参量作用明显。     

The Gamitron - A High Power Crossed-Field Switch Tube for HVDC Interruption

A high power crossed-field discharge device has been developed for use as a high voltage direct current interrupter. This device operates at low pressure (0.05 Torr), conducting current at a fixed voltage (~500 V) only in the presence of a weak magnetic field (~100 G) which is substantially perpendicular to the electric field between the electrodes. When the magnetic field is removed, ionization ceases and current interruption results. Physical phenomena occurring in this device have been investigated, including the glow-to-arc transition, gas cleanup, and high voltage breakdown. Based on the results of these investigations, switch tubes have been developed and successfully tested at the 2 kA, 100 kV level, with recovery rates in excess of 2 kV/?s. The availability of such devices will make possible many applications including HVDC circuit breakers, ac current limiters, and practical inductive energy storage.