Er‐ and Eu‐doped GaP‐oxide porous composites for optoelectronic applications

We demonstrate the controlled preparation of Er‐ and Eu‐doped GaP‐oxide porous composites. The fabrication procedure entails the use of porous semiconductor templates and the impregnation of rare earth ions from a rare earth salt solution in alcohol and thermal treatment. The composites exhibit strong green and red emission that comes from finely dispersed ErPO₄ and EuPO₄ oxide submicron phases in the composite. These materials may prove useful in future generations of optoelectronic and photonic devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Stability of Optically Injected Two‐State Quantum‐Dot Lasers

Simultaneous two‐state lasing is a unique property of semiconductor quantum‐dot (QD) lasers. This not only changes steady‐state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single‐state laser devices, we find a strong suppression of dynamical instabilities in two‐state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all‐optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required.     

从电动力学到量子电动力学：纳米光电子器件

纳米尺度下的光电器件的研制与米、毫米、微米尺度下电子器件或光学器件的研制在基本原理与制造技术上有本质的不同。必须采用量子电动力学和介观物理作为基本原理。在量子电动力学中,光子与电子可以相互转化,光子也可以储存在“空腔”中。光一电转换或光一电一光的转换甚至可以在远小于一个光波的尺度内实现（如100nm以下）。基于大量最新现象发现的启示与推动,产生了一种全新的光予技术：纳米光子技术。在这种全新的纳光子技术中,人们将光子电子的输运与转化联合起来进行考虑,非线性光学获得了长足的发展。微电子技术和概念被大量地推广应用于纳光子技术开发。创新型元件如集成激光器、30dB光放大器、效率为30％的1．55μm滤波器等层出不穷地涌现。纳米技术的研发为信息储存、输运和处理开辟了新的天地。进入21世纪,纳米光子技术研究日新月异。在摩尔经验规律的指导下,不断发展的微电子工业的制造精度已进入100nm领域。大规模应用纳米电子、纳米光子技术的时代已经来临。一些新型的光通讯线路已开始应用纳米光子器件。对公众而言,用于照明的LED只是一个应用实例。报告将结合法国国家纳米研究平台的研发成果来阐述纳米光子学的原理和纳米光子器件发展的趋势。     

Photonics applications in switching: An ATM optical node

An ATM optical node architecture that carries out cell routing and buffering by photonic means, controlled by electronic circuits, is presented. An evolutionary approach, where cell aggregation and compression are introduced to achieve a large throughput, with a high performance, is also described. And we report experimental results that demonstrate the feasibility of all the relevant photonic functions, based on advanced optoelectronic devices, namely: fast wavelength reassignment, suitable for multigigabit operation, based on fast tunable lasers and semiconductor optical amplifiers; high bit rate packet storage in a multiwavelength fiber loop memory including fast optical gates; dynamic wavelength selection, based on distributed feedback (DFB) filters with nanosecond tuning response; and all optical demultiplexing of multigigabit/s time division multiplexing (TDM) signals by means of saturated semiconductor optical amplifiers.     

Photonics applications in switching: An ATM optical node

Abstract

An ATM optical node architecture that carries out cell routing and buffering by photonic means, controlled by electronic circuits, is presented. An evolutionary approach, where cell aggregation and compression are introduced to achieve a large throughput, with a high performance, is also described. And we report experimental results that demonstrate the feasibility of all the relevant photonic functions, based on advanced optoelectronic devices, namely: fast wavelength reassignment, suitable for multigigabit operation, based on fast tunable lasers and semiconductor optical amplifiers; high bit rate packet storage in a multiwavelength fiber loop memory including fast optical gates; dynamic wavelength selection, based on distributed feedback (DFB) filters with nanosecond tuning response; and all optical demultiplexing of multigigabit/s time division multiplexing (TDM) signals by means of saturated semiconductor optical amplifiers.     

Self‐organized colloidal crystals for photonics and laser applications

We present an overview of recent developments in the fabrication and uses of colloidal crystals (CCs) for photonics and laser applications. Microparticles with a diameter in the range from 10 nm to 10 μm often have an intrinsic capability to spontaneously organize themselves from a colloidal suspension into 3D lattice structures. Such highly ordered 3D architectures of microparticles are called colloidal crystals (CCs). The CC structures have received tremendous attention as one of the facile and high‐throughput fabrication techniques of photonic crystals (PCs). We introduce here interesting precedents not only of diverse techniques of high‐quality CC structures, but also of their versatile applications in optical sensors responding to various external stimuli. This review also highlights a new potential use of the CCs as low‐threshold laser devices. We believe that a wide variety of CC architectures will play leading roles in the next generation of optoelectronic devices.     

Directed self‐assembly of single quantum dots for telecommunication wavelength optical devices

The ability to control the nucleation site of a single quantum dot will have a profound effect on the development of quantum dot‐based photonic devices. The deterministic approach will provide a truly scalable technology that can take full advantage of conventional semiconductor processing for device fabrication. In this review, we discuss the progress towards the integration of deterministically nucleated single quantum dots with top‐down quantum optical devices targeting telecommunication wavelengths. Advances in site‐controlled quantum dot nucleation using selective‐area epitaxy now makes it possible to position quantum dots at predetermined positions on a substrate in registry with alignment markers. This, in turn, has allowed for devices fabricated in subsequent processing steps to be aligned to individual quantum dots. The specific devices being targeted are gated‐single dots and coupled dot‐cavity systems which are key components of efficient sources of single photons and entangled photon pairs.     

红荧烯晶体薄膜的制备及应用研究进展

红荧烯具有导电性好、吸收系数高等优良的荧光特性和半导体特性,是目前报道的单晶迁移率最高的材料,在有机光电器件中有很好的发展前景,受到科研人员的广泛关注。目前国内外主要采用真空蒸镀方法和溶液加工方法制备红荧烯晶体薄膜,采用各种制备工艺来提高红荧烯薄膜质量。本文在系统介绍红荧烯晶体薄膜制备工艺研究进展的基础上,归纳总结了掺杂种类/聚合物浓度、后处理工艺/实验温度等对红荧烯晶体性能的影响,简要概述了红荧烯薄膜在有机光电子器件应用研究中所取得的研究成果,最后展望了基于红荧烯晶体薄膜的光电器件的发展趋势。     

Organic materials in future integrated optoelectronic circuits

During the last two decades, lithium niobate has been extensively studied for applications in integrated optical circuits. However, it is difficult to integrate lithium niobate optical devices with semiconductor electronic devices because the materials are incompatible. In recent years, semiconductor materials have been emerging as the main contenders in applications; these materials have the advantage of allowing both optical and electronic devices to be integrated. Further, the semiconductor technology has advanced rapidly, allowing us to engineer device parameters very precisely. In semiconductor optoelectronic devices, that is, bulk and quantum well structures, electroabsorption has mainly been used for amplitude modulation of light. The electrorefraction effect is the most useful for devices employing phase-modulation techniques, but this effect cannot be effectively utilized in semiconductors since the strongest electrorefraction effect is near the absorption edge of the material. Recently, organic materials have been shown to have electro-optic coefficients equal to or larger than that of lithium niobate. There are major advantages of organic materials: (1) the organics can be deposited on semiconductor substrates, and therefore both electronic and optical circuits can be integrated; (2) in organic materials the electrorefraction can be effectively utilized to obtain both amplitude and phase modulation; (3) the organic material composition can be adjusted to satisfy some device requirements. In this paper, a comparison of these material systems are made in terms of device applications.     

Photonic Engineering Group of the University of Cantabria: Recent R&D Contributions in Photonic Sensing Technology

The recent research and development results of the Photonic Engineering Group in the photonic sensing field are reported. This article includes a sample of contributions in several of the ongoing R&D lines: fiber sensing using Bragg grating technology; gas sensing, high temperature monitoring; optoelectronic instrumentation for laser welding monitoring; fiber active devices; and, finally, on sensing technology using plastic optical fiber.     

Photonic Engineering Group of the University of Cantabria: Recent R&D Contributions in Photonic Sensing Technology

The recent research and development results of the Photonic Engineering Group in the photonic sensing field are reported. This article includes a sample of contributions in several of the ongoing R&D lines: fiber sensing using Bragg grating technology; gas sensing, high temperature monitoring; optoelectronic instrumentation for laser welding monitoring; fiber active devices; and, finally, on sensing technology using plastic optical fiber.     

Multiple air-gap filters and constricted mesa lasers – material processing meets the front of optical device technology

Real three-dimensional material structures enable enormous perspectives in the functionality of advanced electronic and optoelectronic III/V semiconductor devices. We report on the technological implementation of surface-micromachined III/V semiconductor devices for optoelectronic applications. Considering fabrication technology, the general principles can be reduced to three fundamental process steps: deposition of a layered heterostructure on a substrate, vertical structurization and horizontal undercutting by selectively removing sacrificial layers. Very useful quality-control elements for precise process control are presented. The basic principles are applied and illustrated in detail by presenting two selected optoelectronic examples. (i) The fabrication technology of buried mushroom stripe lasers is shown. Bent waveguides on homogeneous grating fields are used to obtain chirped gratings, enabling a high potential to tailor specific performances. Excellent optical properties are obtained. (ii) The fabrication technology of vertical optical cavity based tunable single- or multi-membrane devices including air gaps is shown. Record optical tuning characteristics for vertical cavity Fabry–Pérot filters are presented. Single parametric wavelength tuning over 142 nm with an actuation voltage of only 3.2 V is demonstrated. PACS 85.60.-q; 87.80.Mj; 68.65.Ac     

突破光学衍射极限,发展纳米光学和光子学

信息技术已经进入纳米时代,纳米光学和光子学正是为满足快速和高密度信息技术的需求而产生、发展的.先进的纳米光学和光子学器件应该是高速、高分辨率和高集成的,形成各类光学和光子学芯片和盘片.由于器件最小特征尺寸和加工分辨率受限于光的衍射极限,现有技术已接近实用化技术的理论极限并且成本很高,只有突破光学衍射极限才能进一步发展纳...     

III–V semiconductor interface properties as a knowledge basis for modern heterostructure devices

Some examples of interface studies are reported which show their close link with progress in III–V modern semiconductor device physics and technology. The surface electronic properties investigated in-situ by reflectance anisotropy spectroscopy during InGaP/InP growth (metal-organic vapor-phase epitaxy) are essential for the control of ordering phenomena in these layers, which is relevant for high-performance optoelectronic devices. Studies of electronic interface states at metal/narrow-gap III–V semiconductors are presented, which enabled the successful preparation of semiconductor/superconductor hybrid devices. For group-III nitrides with wurtzite structure the presence of fixed polarization interface charges yields new challenges in order to understand and control Schottky-barrier heights, band offsets and 2D confinement in heterostructure field-effect transistors. Received: 26 April 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

Advances in photonic crystals with MEMS and with semiconductor quantum dots

We discuss photonic crystals (PCs) with a microelectromechanical system (MEMS) and semiconductor quantum dots (QDs) as novel classes of PC devices. Integration of MEMS structures into PC devices enables one to realize several kinds of functional devices, such as modulators, switches, and tunable filters for highly integrated photonic circuits. We describe the basic concept of MEMS-integrated PC devices and show numerical and experimental demonstrations of MEMS-integrated functional PC devices. On the other hand, QDs are promising candidates for active media in PC devices. Spontaneous emission control of QD emission in PC nanocavities is especially important for novel optoelectronic devices and quantum information devices. In PC nanocavities, the interaction between QD excitons and photons is enhanced dramatically. The control of spontaneous emission spectrum and the enhancement of the luminescence intensity of InAs QDs by PC nanocavities are demonstrated at telecommunication wavelengths. The Purcell effect for ensemble and single QDs in PC nanocavities are also discussed.     

载流子色散型硅基CMOS光子器件

为了实现硅基单片光电子集成器件的实用化,介绍了采用P-I-N、双极型场效应晶体管、金属氧化物半导体和PN结结构的载流子色散型硅基CMOS光子器件的发展状况和特点,并汇报了硅基CMOS光子器件的设计和制作方面的工作.利用商业的CMOS工艺线制作的器件获得了较好的结果,光调制器消光比约18 dB,1×2光开关消光比约21 dB,谐振环的消光比8～12 dB.采用CMOS技术研制硅基光子器件,将能使集成光子学的发展上一个新的台阶.     

硅基光子集成研究进展

报道了国际上关于硅基光子集成的最新研究进展和本课题组在该领域的研究成果,包括对一些光收发模块、III-V族/硅基激光器等集成器件的结构改进和工艺的探索,展示了兼容互补金属氧化物半导体工艺的硅基光子集成在信息技术领域中的巨大前景.可以预见,硅基光子集成已成为硅光子学的主要研究内容,硅光子学及硅基光子集成的发展目标是趋向更高速率、更低功耗及更大集成密度.     

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of an InGaAlP Compound Semiconductor System

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated because some of the new devices are based on a wider diversity of materials to be etched. Conventional RIE (reactive ion etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. In this article, we suggest high-density plasmas such as ECR (electron cyclotron resonance) and ICP (inductively coupled plasma), for the etching of ternary compound semiconductors (InGaP, AlInP, AlGaP) that are employed for electronic devices such as heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. Operating at lower pressure, high-density plasma sources are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms that are described in this article can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride, because the InGaAlP system shares many of the same properties.     

Transparent,flexible and low‐resistive precision fabric electrode for organic solar cells

We report the use of conducting precision fabrics as transparent and flexible electrode for organic semiconductor‐based thin film devices. Precision fabrics have well‐defined mesh openings, excellent flexibility and are fabricated by high‐throughput roll‐to‐roll manufacturing. Optimized fabrics reached light transmittance over 95% throughout the visible and near infrared spectra. A significant part of the transmitted light is scattered, which is particularly advantageous for solar cell applications. Surface resistivity is as low as ～3 Ohms/square, which decreases Ohmic losses when scaling up to large area devices. We demonstrate that solar cells fabricated onto these electrodes show very similar characteristics to those prepared on ITO. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

半导体物理效应与光电子高技术产业

阐述了能带理论和晶格动力学的创建对半导体科学技术发展发展的历史意义，重点介绍了若干关键半导体物理效应的内涵及其对光电子器件与技术发展所作出的源头性贡献，描绘了以半导体激光器为代表的现代光电子高科技产业的发展现状与趋势，指出了光电子高科技持续发展的主要方向。