磁光平面波导的单向传播特性

表面磁等离子体(surfacemagnetoplasmons,SMPs)是一种在电介质和偏置磁场作用下磁光材料界面处传播的近场电磁波.其独特的非互易传播特性引起了大量科研工作的关注,但在具体的波导结构设计上仍存在很多问题.本文研究了一种银-硅-磁光材料的3层平面波导结构,SMPs在磁光材料和硅的界面处传播,发现在特定的频率范围内,SMPs的基模及高阶模式均具有正向或反向的单向传播特性.分别计算了旋磁与旋电材料平面波导的色散方程,研究了硅层厚度与外加磁场对能带结构及SMPs单向传播区域的影响,发现无论是旋磁或旋电材料的结构,硅层厚度的增加使高阶模式使高阶模式出现在更低的频率位置,使单向传输带宽变小甚至消失,外加磁场的变大使磁光材料的能带结构频率增大的同时带隙中也引入了高阶模式.计算了2种磁光材料平面波导的正向和反向的单向传播带宽宽度,发现旋磁材料YIG的单向SMPs模式出现在GHz波段,最大单向带宽可达到2.45 GHz;旋电材料InSb的单向SMPs模式出现在THz波段,最大单向带宽达到3.9 THz.     

High-efficiency focusing grating coupler with optimized ultra-short taper

A novel high-efficiency focusing non-uniform grating coupler is proposed to couple light into or off silicon photonic chips for large-scale silicon photonic integration. This kind of grating coupler decreases the transition length of the linking taper between the grating and the single-mode waveguide by at least 80%. The radian of the grating lines and the size of the taper are optimized to improve the coupling efficiency. An experimental coupling efficiency of ~ 68% at 1556.24 nm is obtained after optimization and the whole size of the grating is 12 μm × 30 μm, with a very short taper transition of ~15 μm long.     

硅基光子集成研究进展

报道了国际上关于硅基光子集成的最新研究进展和本课题组在该领域的研究成果,包括对一些光收发模块、III-V族/硅基激光器等集成器件的结构改进和工艺的探索,展示了兼容互补金属氧化物半导体工艺的硅基光子集成在信息技术领域中的巨大前景.可以预见,硅基光子集成已成为硅光子学的主要研究内容,硅光子学及硅基光子集成的发展目标是趋向更高速率、更低功耗及更大集成密度.     

全光纤脉冲压缩器的理论及实验研究

对色散位移光纤＋普通单模光纤构成的全光纤脉冲压缩器进行了理论分析，分析了压 缩效果与光纤参数及输入脉冲参数的关系；对不同中心波长和脉宽的主动锁模光纤激光器的 输出脉冲进行了压缩实验，均得到了近变换限Sech的压缩脉冲，实验结果与理论分析一致. 关键词： 全光纤脉冲压缩器 压缩因子 基座能量 主动谐波锁模光纤 激光器     

Widely tunable all-optical wavelength converter based on four-wave mixing using two orthogonally polarized pumps

The principle of broad-band orthogonal-pump (BOP) four-wave mixing in semiconductor optical amplifiers is analyzed in theory. The conversion efficiency reduces rapidly as the detuning of wavelength between the signal and pump increase which can be solved by introducing a BOP method. The constant conversion efficiency and signal-to-noise ratio are obtained over a large wavelength detuning range. The wavelength conversion efficiency with variation smaller than 3.88 dB over 52-nm range has been experimentally demonstrated by using BOP, with the 10-GHz output of distributed feedback/electro-absorption modulator as signal. Conventional single-pump scheme is also performed for comparison and the experimental results fit well with the theory.     

非线性光纤环形镜的脉冲透过特性研究

研究了光纤反常色散区非线性环形镜（NOLM）的脉冲透过特性，得到NOLM周期性透过率函数 第一极大值处透过率、压缩比和对应的孤子阶数与环长之间的函数关系图.通过比较长环和 短环NOLM对无啁啾、啁啾脉冲的透过率和压缩比特性，得出了长环有利于脉冲整形而短环有 利于脉冲压缩的结论. 关键词： 非线性环形镜 透过率 压缩比 孤子阶数     

Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching

A 3-dB paired interference (PI) optical coupler in silicon-on-insulator (SOI) based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method (FD-BPM) and fabricated by potassium hydroxide (KOH) anisotropic chemical wet etching.The- oretically,tolerances of width,length,and port distance are more than 1,100,and 1μm,respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55μm.The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB.     

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.     

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

<正>We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator(SOI) dual-coupled micro-ring embedded with p-i-n diodes.A crosstalk of -23 dB is obtained in the 20-μm-radius micro-ring with the well-designing asymmetric dual-coupling structure.By optimizations of the doping profiles and the fabrication processes,the sub-nanosecond switch-on/off time of400 ps is finally realized under an electrical pre-emphasized driving signal.This compact and fast-response micro-ring switch,which can be fabricated by complementary metal oxide semiconductor(CMOS) compatible technologies,have enormous potential in optical interconnects of multicore networks-on-chip.