Optimization of Zn dopant profiles in a pin-diode/FET by combination of depth profiling techniques: a SIMS, ECV and AES study

Three depth profiling techniques have been combined to optimize the buried p-(Zn)-layer for the monolithic integration of a photodiode (PD) and a field-effect transistor (FET) for optoelectronic application. The Zn diffusion behaviour during MOVPE (metal organic vapour phase epitaxy) growth has been investigated. To meet the requirements of a shallow and a wide Zn profile simultaneously in one substrate a procedure including SiN_x masking, selective reactive ion etching (RIE) and substrate etching has been developed. The depth profiling analyses proved to be valuable tools for process optimization.     

Potential for micromachined actuation of ultra-wide continuously tunable optoelectronic devices

Tailored scaling represents a principle of success that, both in nature and in technology, allows the effectiveness of physical effects to be enhanced. Mutation and selection in nature are imitated in technology, e.g. by model calculation and design. Proper scaling of dimensions in natural photonic crystals and our fabricated artificial 1D photonic crystals (DBRs, distributed Bragg reflectors) enable efficient diffractive interaction in a specific spectral range. For our optical microsystems we illustrate that tailored miniaturization may also increase the mechanical stability and the effectiveness of spectral tuning by thermal and electrostatic actuation, since the relative significance of the fundamental physical forces involved considerably changes with scaling. These basic physical principles are rigorously applied in micromachined 1.55-μm vertical-resonator-based devices. We modeled, implemented and characterized 1.55-μm micromachined optical filters and vertical-cavity surface-emitting laser devices capable of wide, monotonic and kink-free tuning by a single control parameter. Tuning is achieved by mechanical actuation of one or several air-gaps that are part of the vertical resonator including two ultra-highly reflective DBR mirrors of strong refractive index contrast: (i) Δn=2.17 for InP/air-gap DBRs (3.5 periods) using GaInAs sacrificial layers and (ii) Δn=0.5 for Si₃N₄/SiO₂ DBRs (12 periods) with a polymer sacrificial layer to implement the air-cavity. In semiconductor multiple air-gap filters, a continuous tuning of >8% of the absolute wavelength is obtained. Varying the reverse voltage (U=0–5 V) between the membranes (electrostatic actuation), a tuning range of >110 nm was obtained for a large number of devices. The correlation of the wavelength and the applied voltage is accurately reproducible without any hysteresis. In two filters, tuning of 127 and 130 nm was observed for about ΔU=7 V. The extremely wide tuning range and the very small voltage required are record values to the best of our knowledge. For thermally actuated dielectric filters based on polymer sacrificial layers, Δλ/ΔU=-7 nm/V is found. Received: 10 May 2002 / Published online: 8 August 2002     

Design and application of a femtosecond optical parametric oscillator for time-resolved spectroscopy of semiconductor heterostructures

Femtosecond pulses of a collinearly pumped Optical Parametric Oscillator (OPO) are applied for investigations of the carrier dynamics in ternary and quaternary semiconductor quantum wells. The design and the specifications of the OPO are given in detail. We show that no measurable jitter exists between the pump pulses and the output pulses of the OPO. Therefore, it is possible to use the OPO and its pump laser for two-color experiments with a time resolution limited by the pulse lengths. We present and discuss results of transient four-wave mixing experiments on (InGa) As/InP quantum wells, and find a new kind of polarization-dependent quantum beat phenomenon. In addition, non-degenerate experiments on quantum wells from the quaternary (InGaAl) As material system, using two pulses at different wavelengths (one from the OPO and one from the pump laser), are discussed as a novel experimental technique to study carrier trapping into quantum wells.     

Antiprotozoal 6-substituted-5,6-dihydro-alpha-pyrones from Raimondia cf. monoica

Dichloromethane extracts of both the roots and the leaves of Raimondia cf. monoica showed in vitro antiplasmodial and leishmanicidal activities against Plasmodium falciparum and Leishmania panamensis, respectively. Three 6-substituted 5,6-dihydro-2H-pyran-2-ones were isolated. (1) and (2) were identified as (6S)-(5'-oxohepten-1'E,3'E-dienyl)-5,6-dihydro-2H-pyran-2-one (1) and (6R)-(5'-oxohepten-1'Z,3'E-dienyl)-5,6-dihydro-2H-pyran-2-one (2), respectively. (-)-Arentilactone (3) was also isolated. The structure of the new compound (1) was determined by spectroscopic methods; additional spectroscopic data for (2) are reported for the first time.     

Focused terahertz radiation formed by coherently scattered surface plasmon polaritons from partially uncorrugated metal surfaces

We present that a focus of terahertz radiation can be tailored based on coherent scattering of surface plasmon polaritons (SPPs) from a partially defected metal corrugation based on numerical simulations. The introduction of teeth defects in the corrugation allows coupling of the guided SPPs with the radiation and the far-field behavior is tailored by the spatial arrangement of such defects. The proposed structures serve as a kind of planar lenses which are quite thin and inexpensive. Promising applications include interfacing lens antennas between terahertz plasmonic integrated circuits and the external free space, which make terahertz systems very compact and low-cost.