关于热生长SiO_2薄膜厚度的测量

在半导体硅器件的研究工作中,需要准确地测量和控制SiO_2薄膜的厚度。由于干涉原理,SiO_2薄膜在白光照射下呈现颜色。但薄膜厚度与颜色相应的单色光的波长并不成简单的函数关系。本文叙述了用干涉显微镜测量热生长SiO_2薄膜厚度的方法。由测量结果得到SiO_2薄膜的折射率以及SiO_2和硅界面及空气和硅界面反射相移之差。并且测量了一组标准样品的薄膜厚度,列出了薄膜厚度与干涉颜色的对应关系。所得结果与从Rollet数据所推算的结果大致符合。样品厚度还包括了Rollet数据中所未包括的范围(3300—4200)。     

光纤白光干涉法与膜厚纳米测量新技术研究

运用薄膜光学干涉原理、光纤技术和干涉光谱分析技术,用光纤反射式干涉光谱仪(Reflectromic Interference Spectroscopy)直接测试宽带入射光在单晶硅表面超薄SiO₂膜层前后界面反射形成的干涉光谱曲线,并用专业软件对被测光谱信号数据处理后,可直接用公式准确计算出SiO₂氧化膜的厚度和光学折射率通过对单晶硅片表面超薄SiO₂氧化膜的实测,并与成熟的椭圆偏振仪测试结果相比,测试误差≤2nm但该方法测试简单、快速,精度高,不需要制定仪器曲线和数表,可对薄膜任意位置的厚度在线测试经过对不同厚度聚苯乙烯薄膜的厚度测试表明,该方法适合0.5～20μm薄膜厚度的精确在线测量,测量误差小于7nm.     

ZrO2/SiO2溶胶-凝胶薄膜膜层间的渗透行为

 分别以丙醇锆和正硅酸乙酯为原料，采用溶胶-凝胶工艺制备了性能稳定的ZrO₂和SiO₂溶胶。用旋转镀膜法在K9玻璃上分别制备了单层SiO₂薄膜、单层ZrO₂薄膜、ZrO₂/ SiO₂双层膜和SiO₂/ZrO₂双层膜。采用原子力显微镜观察了薄膜的表面形貌，用椭偏仪测量薄膜的厚度与折射率，用紫外-可见光分光光度计测量了薄膜的透射率。对薄膜的透射光谱和椭偏仪模拟的数据进行分析，发现SiO₂/ZrO₂双层膜之间的渗透十分明显，而ZrO₂/SiO₂双层膜之间几乎不发生渗透。利用TFCalc模系设计软件,采用三层膜模型对薄膜的透射率进行模拟，得出的透射曲线与用紫外-可见光分光光度计测量的透射曲线十分符合。     

ZrO2/ SiO2多层膜的化学法制备研究

 分别以ZrOCl₂·8H₂O 和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO₂和SiO₂溶胶。用旋转镀膜法分别在K9玻璃和单晶硅片上制备了ZrO₂/ SiO₂多层膜。采用溶剂替换和紫外光处理等手段,有效地解决了ZrO₂/SiO₂多层膜中膜层开裂和膜间渗透等问题。应用扫描电子显微镜观测了薄膜的表面和剖面微观形貌,并用椭偏仪测得薄膜的厚度和折射率,研究了薄膜厚度、折射率与热处理温度、紫外光处理时间的关系,对所获得薄膜的紫外-可见、红外光谱进行了分析。用输出波长1064nm ,脉宽15ns 的电光调Q光系统产生的强激光进行了单层膜的辐照实验,结果发现溶剂替换后激光损伤阈值有所提高。     

氧化物激光薄膜的离子束溅射制备技术

 研究了由Ta₂O₅和SiO₂组成的多层氧化物激光薄膜的双离子束溅射制备工艺。简要介绍了离子束溅射技术的基本工作原理和应用，着重分析了薄膜厚度均匀性的调控方法。先后得到了Ta₂O₅和SiO₂单层薄膜厚度均匀性调控结果以及不同波长处薄膜折射率，并定性地分析比较了离子束溅射和电子束蒸发制备的薄膜结构；制备并测试了633nm,1 315nm反射薄膜以及增透膜。结果表明：采用离子束溅射技术能够制备出优良的、满足需要的激光高反射薄膜元件。     

层间热处理对SiO2/ZrO2双层膜的影响

 以正硅酸乙酯和丙醇锆为前驱体,用溶胶-凝胶法在K9基片上提拉镀制SiO₂/ZrO₂双层膜。采用不同实验步骤制备了2个样品,样品1镀完SiO₂后直接镀ZrO₂ ,样品2镀完SiO₂经热处理后再镀ZrO₂。采用原子力显微镜、椭偏仪、紫外-可见分光光度计对薄膜进行表征。针对SiO₂/ZrO₂双层膜,考虑到膜间渗透的影响,采用３层Cauchy模型进行椭偏模拟,椭偏参数的模拟值曲线与椭偏仪的测量值曲线十分吻合,进而发现热处理可以使SiO₂/ZrO₂双层膜之间的渗透减少近23 nm,从而提高其峰值透射率。利用输出波长1.064 mm,脉宽8.1 ns的激光束对样品进行了损伤阈值的测试,用光学显微镜观察损伤形貌,结果发现两者损伤阈值分别为13.6 J/c2和14.18 J/cm²,均为膜的本征损伤。     

紫外波段SiO2/Si3N4介质膜分布式布拉格反射镜的制备与研究

采用光学传递矩阵方法设计了紫外波段SiO₂/Si₃N₄介质膜分布式布拉格反射镜, 并利用等离子体增强化学气相沉积技术在蓝宝石(0001)衬底上制备了SiO₂/Si₃N₄介质膜分布式布拉格反射镜. 光反射测试表明, 样品反射谱的峰值波长仅与理论模拟谱线相差10 nm, 并随着反射镜周期数的增加而蓝移. 由于SiO₂与Si₃N₄具有相对较大的折射率比, 因而制备的周期数为13的样品反射谱的峰值反射率就已大于99%. 样品反射谱的中心波长为333 nm, 谱峰的半高宽为58 nm. 样品截面的扫描电子显微镜和表面的原子力显微镜测量结果表明, 样品反射谱的中心波长蓝移是由子层的层厚和界面粗糙度的变化引起的. X射线反射谱表明,子层界面过渡层对于反射率的影响较小, 并且SiO₂膜的质量比Si₃N₄差, 也是造成反射率低于理论值的原因之一.     

采用溶胶凝胶协同自组装方法制备SiO2反蛋白石结构薄膜及其光学性质研究

研究了溶胶凝胶协同自组装制备大面积高质量SiO₂反蛋白石结构薄膜的方法. 向单分散的聚苯乙烯(PS)胶体溶液中添加SiO₂前驱物溶液,用垂直自组装法一步得到微球空隙中均匀填充有凝胶的 复合PS胶体晶体薄膜,在空气中烧结去除PS后得到SiO₂反蛋白石结构薄膜.通过对添加前驱物溶液比例、 自组装温度以及烧结温度等参数的研究,用不同粒径的PS微球制备了不同孔径的高质量SiO₂反蛋白石结构薄膜. 用扫描电子显微镜和X射线能量色散谱仪对制备得到的薄膜样品进行显微形貌和成分表征,并测试了其透射光谱. 结果表明:溶胶凝胶协同自组装法制备的SiO₂反蛋白石结构薄膜大面积高度有序,孔径可以控制且选择范围宽; 薄膜的透射光谱带隙明显,带隙中心波长与理论计算结果相符.     

磷在SiO2-Si系统中的扩散

用中子激活方法,对气态P₂O₅在SiO₂-Si系统中的扩散分布进行了直接测量。样品为p型Si单晶,电阻率为3—5欧姆·厘米,氧化层是在1250℃下水汽中生长的,其厚度为0.45—0.47微米。实验结果表明:对于完全掩蔽的样品,磷在SiO₂层中的浓度分布有个陡峭的边界;对于掩蔽失效情形,在靠近SiO₂-Si交界面约0.1微米的SiO₂层内,磷的浓度显著地降低,出现一个明显的交界层,在交界层以外的SiO₂层中磷的浓度是均匀的和恒定的,而交界层中磷的浓度及磷在Si中的表面浓度都随时间的延长而显著地升高,文中对所得的结果作了简单讨论。     

高损伤阈值三倍频分离膜

 设计了Nd：YAG激光用三倍频分离膜,膜层材料为SiO₂和HfO₂。经过优化,膜系在355 nm处的反射率在99%以上,在532 nm和1 064 nm处透射率也在99%以上。采用电子束蒸发技术,在熔融石英基底上制备了样品,经测量,制备的分离膜光学性能与设计值接近。分离膜在355 nm激光辐照下的损伤阈值为5.1 J/cm²,并用微分干涉显微镜表征了薄膜损伤形貌。     

Intensity analysis of XPS spectra to determine oxide uniformity: Application to SiO2/Si interfaces

A simple method of determining oxide uniformity is derived which requires no knowledge of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO₂ films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20–30 Å thick is found near the SiO₂/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.     

Structure-related infrared optical properties of BaTiO3 thin films grown on Pt/Ti/SiO2/Si substrates

BaTiO₃ thin films with different thickness have been grown on Pt/Ti/SiO₂/Si substrates by a modified sol-gel method. X-ray diffraction analyses show that the BaTiO₃ thin films are polycrystalline. The crystalline quality of the films is improved with increasing thickness. The infrared optical properties of the BaTiO₃ thin films have been investigated using an infrared spectroscopic ellipsometry in the wave number range of 800-4000 cm⁻¹ (2.5-12.5 μm). By fitting the measured pseudodielectric functions with a three-phase model (Air/BaTiO₃/Pt), and a derived classical dispersion relation for the thin films, the optical constants and thicknesses of the thin films have been simultaneously obtained. The refractive index of the BaTiO₃ thin films increases and on the other hand, the extinction coefficient does not change with increasing thickness in the entirely measured wave number range. The dependence of the refractive index on the film thickness has been discussed in detail and was mainly due to both the crystalline quality of the films and packing density. Finally, the absorption coefficient was calculated in the infrared region for applications in the pyroelectric IR detectors.     

Au/SiO2纳米多层薄膜的制备及其性质表征

利用多靶磁控溅射技术制备了Au/SiO₂纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO₂的沉积时间及SiO₂的沉积时间一定而改变薄膜厚度时，多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明：具有纳米层状结构的Au/SiO₂多层薄膜在560 nm波长附近有明显的表面等离子共振吸收峰，吸收峰的强度随Au颗粒的浓度增加而增强，在Au颗粒浓度相同的情况下，复合薄膜 关键词： 2纳米复合薄膜')" href="#">Au/SiO₂纳米复合薄膜 多靶磁控溅射 吸收光谱 有效介质理论     

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

We report the fabrication and electrical characteristics of thin film transistors based on MgZnO thin films with different thicknesses of MgO buffer layer. The MgZnO thin films with MgO buffer layers were grown on SiO₂/p-Si substrates by plasma assisted molecular beam epitaxy. The effects of the buffer layer thickness on the structural properties of MgZnO films are investigated by X-ray diffraction, and the results show that the crystal quality of the MgZnO film is enhanced with 4 nm MgO buffer layer. The MgZnO TFT with 4 nm MgO buffer layer exhibits an n-type enhancement mode characteristics with a field effect mobility of 1.85 cm²/V s, a threshold voltage of 27.6 V and an on/off ratio of above 10⁶.     

单层SiO2物理膜与化学膜激光损伤机理的对比研究

采用离子束溅射沉积技术和溶胶-凝胶技术在K9基片上镀制了厚度相近的SiO₂单层介质膜，用表面热透镜技术对两类膜层分别进行了热吸收及实时动态热畸变实验测试，结合散射光阈值测试及实验前后膜层的显微观测，对相同基底、相同膜层材料而采用不同方法镀制的光学膜层，发现化学膜的强激光损伤阈值远高于相应物理膜；从热力学响应及膜层特性差异的角度揭示了化学膜层的强激光损伤阈值远高于相应物理膜层的微观机理，即物理膜具有高吸收下的致密膜层快传导的基底热冲击效应，而化学膜则有低吸收下的疏松空隙填充慢传导的延缓效应，大量的实验数据及现象都证实了这一结论. 关键词： 强激光辐照损伤 损伤形貌 热冲击 热吸收     

Effects of interface between SnO2 thin film and Si substrate on growth time

SnO₂ thin film was grown on Si substrate using the low pressure chemical vapor deposition (LPCVD) method. The SnO₂ thin film was grown in the direction of (110) as deposition time increased. The atomic ratio of O decreased by 62.4, 57.6, and 45.6%, and the thickness of the thin film increased to 0.2, 0.3, and 0.7 ? as the deposition time increased to 10, 20, and 30 min, respectively. The interface of the thin film was examined using high-resolution transmission electron microscope (HRTEM) and energy dispersive spectroscopy (EDS) analysis. The SiO₂ layer was observed at between the SnO₂ thin film and the Si substrate. This layer decreased in thickness as the deposition time increased, which indicates that the deposition time affected the interface of the thin film.     

The effect of BZO doping concentration and thickness dependent properties of YBCO films grown by PLD on buffered NiW substrates

The effect of BaZrO₃ (BZO) doping is systematically studied in YBa₂Cu₃O_6+x (YBCO) thin films deposited by pulsed laser deposition (PLD) on buffered NiW substrates. Based on the structural and magnetic properties, the optimal BZO doping concentration is obtained to vary between 4 and 7.5 wt.%, depending mainly on applied magnetic field. This relatively high optimal concentration is linked to the nanograined target material and metal substrate that cause low-angle grain-boundaries and in-plane spread of YBCO crystals on NiW. Thickness dependent analysis of undoped and BZO-doped YBCO films predicts differences in growth mechanisms where early growth next to the substrate interface is 2D-type in BZO-doped films. This leads to the situation where crystallographic structure as well as superconducting properties are improved when the film develops and the thickness is increased. Therefore from the resistivity measurements a threshold thicknesses where reasonable properties occur are determined for both set of films. Measurements in thermally activated flux-flow regime (TAFF) indicate that above the threshold thickness relatively strong and isotropic vortex pinning is realized in BZO-doped YBCO films. Generally, this paper demonstrates that especially for thin film applications on NiW substrates even more compatible buffer layer structures should be utilized.     

Morphological and optical characterization of thermally evaporated copper sulphide thin films

Thin films of Cu₂S on opaque gold layers and quartz substrates at the temperature of 393 K were deposited by a thermal evaporation technique. The surface morphology of the Cu₂S thin films at different thicknesses is investigated by AFM. It is seen that all the films are composed of highly coordinated spherical nano-sized particles well adhered to the substrate. The transmittance and reflectance spectra of Cu₂S thin films on the quartz substrate were recorded by a UV–visible spectrophotometer. The results show that the thermally evaporated Cu₂S thin films have the characteristic transmittance and reflectance suitable for optoelectronic applications. The stoichiometry and surface morphology of a grown Cu₂S thin film were confirmed by energy-dispersive X-ray spectroscopy (EDAX) and scanning electron microscopy (SEM), respectively. The dependence of the refractive index and the extinction coefficient on the photon energy for both the surface film and the opaque gold layer have been determined by ellipsometry. From the spectral behaviour of the absorption coefficient at two distinct absorption regions, a dual-band scheme of optical absorption for a Cu₂S thin film is described. The indirect and direct edges of Cu₂S are found to be about at 0.91 eV and 2.68 eV, respectively.     

Comparative study on diameter distribution of single-walled carbon nanotubes using growth templates with different pore sizes: Zeolite-L,ZSM-5, and MCM-41

We report a comparative study on diameter distribution of single-walled carbon nanotubes (SWNTs) grown using nanoporous templates having different pore sizes, namely, zeolite-L, ZSM-5, and MCM-41. The change in the tube diameter based on catalytic film thickness and growth temperature was systematically investigated. We prepared very thin Fe catalyst films with nominal thicknesses of 0.5, 0.7, 1, and 2 Å, and the growth temperature was varied from 850 to 925 °C. We found that the SWNT mean diameter and size distribution width decreased with decreasing catalyst film thickness, growth temperature, and pore sizes of the templates. In addition, all SWNTs grown from the nanoporous templates have narrower diameter distribution compared to the SWNTs grown from SiO₂ planar surface. The obtained results are straightforward and suggest that the template growth has potential for SWNT growth with very narrow diameter distribution.     

Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

Ba(Zr_0.05Ti_0.95)O₃ (BZT) thin films grown on Pt/Ti/SiO₂/Si(1 0 0) substrates were prepared by chemical solution deposition. The structural and surface morphology of BZT thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results showed that the random oriented BZT thin film grown on Pt/Ti/SiO₂/Si(1 0 0) substrate with a perovskite phase. The SEM surface image showed that the BZT thin film was crack-free. And the average grain size and thickness of the BZT film are 35 and 400 nm, respectively. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Ti, and Zr exist mainly in the forms of BZT perovskite structure.