Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

Improvement of electron injection of organic light-emitting devices by inserting a thin aluminum layer into cesium carbonate injection layer

We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device's maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.     

Narrowband perfect terahertz absorber based on polar-dielectrics metasurface

We theoretically propose a narrowband perfect absorber metasurface(PAMS) based on surface phonon polaritons in the terahertz range. The PAMS has unit cell consisting of a silver biarc on the top, a thin polar-dielectric in the middle and a silver layer at the bottom. The phonon polaritons are excited at the interface between the silver biarc and the polar dielectric, and enhance the absorption of the PAMS. The absorption peak is at 36.813 μm and the full width half maximum(FWHM) is nearly 36 nm, independent of the polarization and incidence angle. The electric fields are located at the split of the biarc silver layer and the quality factor Q is 1150. The FWHM decreases with the decreasing split width. When the thickness of the bottom layer is larger than 50 nm, the narrow band and high absorption are insensitive to the thickness of those layers. The designed absorber may have useful applications in terahertz spectra such as energy harvesting, thermal emitter, and sensing.     

Giant low-frequency magnetoelectric torque (MET) effect in polyvinylidene-fluoride (PVDF)-based MET device

A polyvinylidene-fluoride(PVDF)-based magnetoelectric torque(MET) device is designed with elastic layer sandwiched by PVDF layers, and low-frequency MET effect is carefully studied. It is found that elastic modulus and thickness of the elastic layer have great influences on magnetoelectric(ME) voltage coefficient(α_(ME)) and working range of frequency in PVDF-based MET device. The decrease of the modulus and thickness can help increase the α ME. However,it can also reduce the working range in the low frequency. By optimizing the parameters, the giant α_(ME) of 320 V/cm·Oe(1 Oe = 79.5775 A·m~(-1) at low frequency(1 Hz) can be obtained. The present results may help design PVDF-based MET low-frequency magnetic sensor with improved magnetic sensitivity in a relative large frequency range.     

Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method

Two kinds of InAs/GaAs quantum dot(QD) structures are grown by molecular beam epitaxy in formation–dissolution–regrowth method with different in-situ annealing and regrowth processes. The densities and sizes of quantum dots are different for the two samples. The variation tendencies of PL peak energy, integrated intensity, and full width at half maximum versus temperature for the two samples are analyzed, respectively. We find the anomalous temperature dependence of the InAs/GaAs quantum dots and compare it with other previous reports. We propose a new energy band model to explain the phenomenon. We obtain the activation energy of the carrier through the linear fitting of the Arrhenius curve in a high temperature range. It is found that the Ga As barrier layer is the major quenching channel if there is no defect in the material. Otherwise, the defects become the major quenching channel when some defects exist around the QDs.     

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

The influence of a deep-level-defect(DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN(p++-GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping(VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p++-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p++-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97×10-4?·cm2 is achieved.     

Theoretical investigation of exchange bias

The exchange bias of bilayer magnetic films consisting of ferromagnetic (FM) and antiferromagnetic (AFM) layers in an uncompensated case is studied by use of the many-body Green's function method of quantum statistical theory. The effects of the layer thickness and temperature and the interfacial coupling strength on the exchange bias H_E are investigated. The dependence of the exchange bias H_E on the FM layer thickness and temperature is qualitatively in agreement with experimental results. When temperature varies, both the coercivity H_C and H_E decrease with the temperature increasing. For each FM thickness, there exists a least AFM thickness in which the exchange bias occurs, which is called pinning thickness.     

Optimization of TiO_2/Cu/TiO_2 multilayers as a transparent composite electrode deposited by electron-beam evaporation at room temperature

Highly transparent indium-free composite electrodes of Ti O2/Cu/Ti O2 are deposited by electron-beam evaporation at room temperature. The effects of Cu thickness and annealing temperature on the electrical and optical properties of the multilayer film are investigated. The critical thickness of Cu mid-layer to form a continuous conducting layer is found to be 11 nm. The multilayer with a mid-Cu thickness of 11 nm is optimized to obtain a resistivity of 7.4×10-5Ω·cm and an average optical transmittance of 86% in the visible spectral range. The figure of merit of the Ti O2/Cu(11 nm)/Ti O2 multilayer annealed at 150ΩC reaches a minimum resistivity of 5.9×10-5Ω·cm and an average optical transmittance of 88% in the visible spectral range. The experimental results indicate that Ti O2/Cu/Ti O2 multilayers can be used as a transparent electrode for solar cell and other display applications.     

Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

Formation of ZnGa_2O_4 films by multilayer deposition and subsequent thermal annealing

The Ga203/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga203 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa204 film is achieved via the annealing of the Ga203/ZnO multilayer film. The influences of original Ga203 sublayer thickness on the optical and structural properties of Ga203/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga203 sublayer, the optical band-gap of Ga203/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga203 and ZnGa204.     

Observation of excitonic quenching by long-range dipole-dipole interaction in sequentially doped organic phosphorescent host-guest system

We studied the quenching mechanisms responsible for the low efficiency of thin film phosphorescence by a specially designed organic light-emitting diode with an emission layer consisting of a few repeating cells made of a sequentially evaporated host and guest. Variation of the thickness of the guest layer in each cell enables the study of the effect of molecule aggregation on the quantum efficiency. On the other hand, variation of the thickness of the host layer reveals a new long-range quenching mechanism involving a F?rster-like dipole-dipole interaction. The quantitative analysis shows that the external quantum efficiency as a function of the host layer thickness follows the characteristic of the long-range F?rster process. Our study provides a new understanding of quenching mechanisms in phosphorescent material and extends the existing knowledge on long-range energy transfer.     

掺杂有机电致发光中电压调制变色两种机制的探讨

研究两种掺杂电致发光器件聚乙烯基咔唑（PVK）：Rubrene和Alq3:MN-PPV。通过其光致发光及电致发光特性的研究，发现两种器件的光致发光与电致发光有较大差别。分析认为这是能量传递及电致发光中陷阱对载流子吸引的共同作用使得PVK激子在光致发光和电致发光中的复合速率不同造成的；同时发现对于不同浓度的PVK：Rubrene及Alq3:MN-PPV电致发光随电压增加都发生变色现象，但是它们分别是由两种不同的机制造成的：前者作为染料分子Rubrene，不能形成类似Alq3那样的分相体系，Rubrene发光主要来自PVK的能量传递及陷阱电子对PVK空穴的吸引；后者是由于分相造成载流子在两相中的迁移不平衡。     

DCM掺杂PVK体系的超快光谱

利用稳态荧光光谱和时间分辨超快光谱研究了DCM掺杂PVK(聚乙烯咔唑)体系的发光特性和能量转移。根据DCM的吸收光谱与PVK的荧光光谱,用Frster理论估算出DCM:PVK掺杂体系能量转移的临界半径及其效率。在DCM:PVK掺杂薄膜中,随着掺杂浓度的升高,DCM的发射强度增强,PVK的发射强度减弱,两者相对强度之比与估算结果一致。还利用时间分辨超快光谱研究了DCM:PVK掺杂薄膜体系的能量转移动力学过程,观察到DCM:PVK掺杂薄膜的荧光寿命随着掺杂浓度的升高逐渐变短。结果表明,在DCM:PVK掺杂薄膜中,存在从PVK到DCM较为有效的Frster能量转移。     

5,6,11,12-四苯基四苯并掺杂8-羟基喹啉铝薄膜的荧光谱及发光机理

用高荧光染料的5，6，11，12－四苯基四苯并对8－羟基喹啉铝进行掺杂，测量其光致发光和电致发光谱。结果表明：在低掺杂时，主发光体是Alq，掺入的Rubrene作为客发光体只是在Alq带隙中引入了分立能级；随着掺入的Rubrene浓度增加，Rubrene成了主发光体，Alq变成了客发光体，出现了发光体的互换现象。由于Rubrene的吸收光谱与Alq的发射谱重叠较大，在光致发光中存在从Alq向Rubrene的能量传递和电荷转移过程，而电致发光则是由于Rubrene导带中电子浓度远大于注入到Alq导带中电子浓度，造成Rubrene导带电子与价带空穴复合的几率比Alq中的复合几率大得多，其EL主要是Rubrene的发光。     

Organic low-dimensional structure electroluminescent material characteristics and devices

Photoluminescence (PL) characteristics of organic doped films are studied as a function of dopant concentration, doped layer thickness. The luminescence properties of doped films are decided by Förster energy transfer rate between host and guest and fluorescence quenching effect of guest. For Alq:rubrene doped film at 5% doping level, we fabricated and characterized organic doped quantum-well structure device, and observed significant quantum size effect. For Alq:QAD doping system, at low doping level of 0.4%, the intermolecular spacing between QAD molecules is relatively large, the interaction between neighboring QAD molecules is very small due to the strong localization of the carriers in the single QAD molecules, the PL properties of Alq:QAD doped films only depends on the PL properties of single isolated QAD molecules, which is somewhat similar to the inorganic quantum dot structure. We also reported the electroluminescent performance of the Alq:QAD system.     

掺杂型红色有机电致发光显示器件

全色显示是有机电致发光显示(OLED)器件发展的目标,而高性能红色发光器件一直是制约全彩色OLED器件实用化的瓶颈,也是目前有机电致发光显示研究的热点。制作了掺杂DCJTB和不同浓度的rubrene两种荧光染料的红色有机电致发光显示器件,以NPB和Alq₃分别作为空穴传输层和电子传输层,发现器件性能与只掺杂DCJTB的器件相比有明显提高,发光效率提高到2～3倍。通过Frster理论和能带理论分析了器件的能量转移机理,研究发现Frster能量转移不是掺杂器件能量转移的主要形式,载流子俘获机制才是器件效率提高的主要原因;rubrene的引入使得能量能够更有效地从Alq₃转移到DCJTB,从而显著地提高了器件的发光效率和性能。     

Red top-emitting organic light-emitting device using 6, 13-di-(3, 5-diphenyl)phenylpentacene doped emitting system

Fluorescent red organic light-emitting devices (OLEDs) with narrow emission and negligible current-induced quenching by using a pentacene derivative of 6,13-di-(3,5-diphenyl)phenylpentacene (PDT) doped emitting system were demonstrated. With the incorporation of C₆₀ outcoupling layer, the PDT-based top-emitting OLED showed superior electroluminescence performances with Commission Internationale d’Eclairage color coordinates of (0.64, 0.36) and luminous efficiency of ～3 cd/A. To clarify the actual energy transfer process in PDT-doped emitting system, the Förster’s radius was calculated. The results indicated that the energy transfer process is predominantly from the host of tris(8-hydroquinoline) aluminum to guest of PDT via the assistant dopant of 5,6,11,12-tetraphenylnaphthacene.     

Intermolecular interaction and a concentration-quenching mechanism of phosphorescent Ir(III) complexes in a solid film

Solid-state self-quenching processes of highly efficient Ir(III) phosphorescent emitters are investigated by the measurement of thin film photoluminescence quantum efficiency and transient lifetime as a function of doping concentration in a host matrix. The radiative decay rate constant is found to be independent from the average distance between dopant molecules (R), and the concentration-quenching rate constant is shown to be dependent on R(-6). The quenching dependence on R strongly suggests that luminescent concentration quenching in a phosphorescent Ir(III) complex:host film is controlled by dipole-dipole deactivating interactions as described by the F?rster energy transfer model.     

Energy transfer dynamics between Alq3 and CdTeS/ZnS core shell nanocrystals

The photoluminescence (PL) properties of the guest-host films, using CdTeS/ZnS core shell quantum dots (QDs) as the guest and organic small-molecule material Alq₃ as the host, are studied by steady-state and time-resolved PL spectroscopy. Both the relative intensity and the PL lifetime are intensively dependent on the weight ratio of Alq₃ and CdTeS/ZnS QDs. The detailed analysis provides clear evidence for a Förster energy transfer from Alq₃ host to QDs guest, based on the nonradiative resonant transfer mechanism. The results are relevant to the application of hybrid organic/inorganic systems to OLEDs.     

利用级联式能量传递的有机电致发光器件

为了提高掺杂型有机电致发光器件(OLED)中主体发光材料与客体荧光染料间能量传递的效率,2-对联苯-8-羟基喹啉锌(Zn ₂)作为NPB : DCJTB掺杂体系的能量助传递剂,制备了结构如:ITO/NPB/NPB : DCJTB/Zn ₂/BCP/Al的有机电致发光器件。助传递剂Zn ₂的加入,能够两次利用Frster能量转移,实现NPB向DCJTB级联式的能量传递过程,提高低浓度时掺杂染料DCJTB红光发射的纯度;此外,还探讨了三者间能量传递的有效距离,即当助传递剂与掺杂体系的距离在小于10 nm的范围内,其参与能量传递的效率随着距离的增加而逐渐下降。