Ir(Fppy)_3掺杂PVK体系发光特性的研究

对蓝色磷光材料Ir(Fppy)3不同浓度掺杂PVK薄膜的光致发光(PL)和电致发光(EL)特性进行了研究。并制备了结构为ITO/PEDOT:PSS/PVK:Ir(Fppy)3/BCP/Alq3/LiF/Al的蓝色磷光有机电致发光器件。实验结果发现,磷光材料掺杂浓度不同,器件发光特性不同。当Ir(Fppy)3掺杂浓度比较低时,EL光谱中可以观察到PVK较弱的发光;当Ir(Fppy)3掺杂浓度较高时,会发生浓度猝灭;当Ir(Fppy)3掺杂浓度比较适中时,EL光谱中观察不到PVK的发光,只有Ir(Fppy)3的发光。通过I-V-L特性的比较,当掺杂浓度为4%时,器件的光电特性最好。     

Ir(ppy)3掺杂PVK体系发光特性的研究

对常温下磷光染料Ir(ppy)3掺杂PVK薄膜的光致发光(PL)和电致发光(EL)特性进行了研究。器件结构为ITO/PEDOT:PSS/PVK:Ir(ppy)3/BCP/Alq3/Al。实验发现随磷光材料掺杂浓度的不同,器件的发光性能发生变化。当浓度适宜时,主体材料PVK的发光很弱,主要为Ir(ppy)3的磷光发射。通过L-I-V特性曲线的比较,掺杂浓度为5%的光电性能最好,说明器件在掺杂浓度为5%时效果最佳。     

Electroluminescence of organic light-emitting diodes consisting of an undoped (pbi)2Ir(acac) phosphorescent layer

The electroluminescence (EL) characteristics of phosphorescent organic light-emitting diodes (OLEDs) with an undoped bis(1,2-dipheny1-1H-benzoimidazole) iridium (acetylacetonate) [(pbi)₂Ir(acac)] emissive layer (EML) of various film thicknesses were studied. The results showed that the intensity of green light emission decreased rapidly with the increasing thickness of (pbi)₂Ir(acac), which was relevant to the triplet excimer emission. It suggested that the concentration quenching of monomer emission in the undoped (pbi)₂Ir(acac) film was mainly due to the formation of triplet excimer and partly due to the triplet-triplet annihilation (TTA) and triplet-polaron annihilation (TPA). A green OLED with a maximum luminance of 26,531 cd/m², a current efficiency of 36.2 cd/A, and a power efficiency of 32.4 lm/W was obtained, when the triplet excimer emission was eliminated. Moreover, the white OLED with low efficiency roll-off was realized due to the broadened recombination zone and reduced quenching effects in the EML when no electron blocking layer was employed.     

Efficient Solution-Processed Blue Electrophosphorescent Devices Based on a Novel Small-Molecule Host

Efficient blue small molecular phosphorescent fight-emitting diodes with a blue phosphorescent dye bis（3,5- difluoro-2-（2-pyridyl）-phenyl-（2-carboxypride） iridium （Ⅲ） （Flrpic） doped into a novel small-molecule host 9,9- bis[4-（3,6-di-tert-butylcarbazol-9-yl）phenyl] fluorene （TBCPF） as the light-emitting layer have been fabricated by spin-coating. The host TBCPF can form homogeneous amorphous films by spin-coating and has triplet energy higher than that of the blue phosphorescent dye Flrpic. All the devices with different Flrpic concentration in the emitting layer give emission from Flrpic indicating complete energy transfer from TBCPF to Flrpic. The device shows the best performance with a peak brightness of 8050 cd/m^2 at 10.2 V and the maximum current efficiency up to 3.52 cd/A, when the Flrpic doped concentration is as high as 16%.     

A study on the characteristics of OLEDs using Ir complex for blue phosphorescence

Several iridium-based complexes were investigated as phosphorescent dopants. They achieved about 100% internal quantum efficiency, due to utilization of both singlet and triplet excitons in the radiative processes. We have fabricated phosphorescent OLEDs with 8% Ir(ppz)₃ as a triplet emissive dopant in various host materials. CBP, which has an efficiency of 0.20 cd/A, is the best host material. Furthermore, we synthesized metal-organic phosphor complexes based on Ir with different ligands as to (Im)₂Ir(acac), (Im-R)₂Ir(acac), and Ir(ppz)₂(acac).     

Triplet exciton diffusion and phosphorescence quenching in iridium(III)-centered dendrimers

A study of triplet-triplet exciton annihilation and nonradiative decay in films of iridium(III)-centered phosphorescent dendrimers is reported. The average separation of the chromophore was tuned by the molecular structure and also by blending with a host material. It was found that triplet exciton hopping is controlled by electron exchange interactions and can be over 600 times faster than phosphorescence quenching. Nonradiative decay occurs by weak dipole-dipole interactions and is independent of exciton diffusion, except in very thin films (<20 nm) where surface quenching dominates the decay.     

Ir（PPY）3对Rubrene荧光材料的敏化性研究

最近几年,磷光器件是有机电致发光研究领域和产业化的一大热点。在实验中作者发现PVK∶PBD∶Rubrene共掺体系的发光中存在较强的PVK发光,能量传递不充分。由于一些具有重金属离子的有机物,存在强的自旋-轨道耦合作用,引入到共掺体系可以充分利用单线态和三线态的发光,从而获得高于一般有机材料器件所达到的内量子效率。为获得单色性较好的Rubrene发光,作者将磷光敏化剂Ir(ppy)3引入到PVK∶PBD∶Rubrene共掺溶液中,得到了纯正Rubrene发光,Forester能量传递也更加充分。当进一步提高Rubrene掺杂浓度以后,单色性Rubrene发光更加明显,并讨论了Ir(ppy)3所起的作用和器件的发光机理。磷光材料与有机小分子材料共掺的方法,可以有效提高器件的发光亮度及效率。     

Energy transfer in a thin film of TPD fluorescent molecules doped with PtOEP and Ir(ppy)3 phosphorescent molecules

A thin film of triphenylamine dimer, N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine (TPD), doped with fac tris(2-phenylpyridine) iridium (Ir(ppy)₃) and platinum octaethyl porphine (PtOEP) is characterized by photoluminescence emission measurements at several excitation wavelengths and photoluminescence excitation measurements at relevant emission wavelengths in the temperature range from 10 K to room temperature. The investigated film is a phosphorescent OLED material with singlet absorbing host (TPD) and triplet emitting guests [Ir(ppy)₃ and PtOEP]. At short wavelength excitation simultaneous triple band emission from singlet TPD, triplet Ir(ppy)₃ and TPD, and from triplet PtOEP is observed. Förster-type singlet-singlet state energy transfer from TPD to Ir(ppy)₃ and PtOEP, intra-component intersystem crossing, and Dexter-type triplet-triplet energy transfer between the substituents are studied.     

采用瞬态电致发光研究磷光掺杂体系发光瞬时过冲的发射机理

掺杂型有机电致发光器件中载流子累积、载流子复合等物理过程的深入了解对提高器件效率和稳定性有重要作用。通过瞬态电致发光测量可以研究掺杂型有机电致发光器件内部载流子累积。对结构为: ITO/NPB(30 nm)/host: Ir(ppy)₃/BCP(10 nm)/Alq₃(20 nm)/LiF(0.7 nm)/Al(100 nm)的器件分别研究主体材料以及客体掺杂浓度变化对有机掺杂型器件瞬态发光行为的影响。实验发现,当单脉冲驱动电压关闭后,只有TAZ: Ir(ppy)₃掺杂器件出现发光瞬时过冲现象,即发光强度衰减到一定时间时突然增强;且随着客体掺杂浓度的增加,瞬时过冲强度逐渐增强。通过分析TAZ: Ir(ppy)₃掺杂器件的瞬时过冲强度对主体材料与掺杂浓度的依赖关系,进一步发现,瞬时过冲效应强度主要受限于发光层内部积累的电子载流子;TAZ: Ir(ppy)₃发光层内电子容易被客体材料分子俘获并积累,电场突变时陷阱电子容易跳跃到主体材料上并与主体材料上积累的空穴形成激子,激子能量传递到客体材料上并复合发光继而出现发光强度的瞬时过冲现象。研究发光瞬时过冲行为可探究器件发光层内的载流子和激子的动态行为,有利于指导器件的设计,从而减少积累电荷的影响,提高器件的性能。     

High-efficiency red phosphorescent electroluminescence devices based on mixed p/n host matrices

In this Letter, we demonstrate a way to control the charge carrier transport mechanisms in phosphorescent organic light-emitting devices based on the mixing of two p and n host materials in the emissive layer (EML). The matrices have been selected in order to fulfill the requirements of the energy level mismatch with the transporting and emitting materials. By using the mixed-host approach in combination with a phosphorescent red emitter, namely (1-phenylisoquinoline) iridium (III) [Ir(piq)(3)], maximum external and power efficiencies of 14.3% and 10 lm/W, respectively, have been achieved, with an average external efficiency value of 12% in the luminance range 100-10,000 cd/m(2).     

Highly efficient polymer phosphorescent light-emitting devices based on a new polyfluorene derivative as host

Several highly efficient iridium-complex polymer light-emitting devices (PLEDs) are fabricated,with a newly synthesized blue conjugated polymer,poly[(9,9-bis(4-(2-ethylhexyloxy)phenyl)-fluorene)-co-(3,7-dibenziothiene-S,S-dioxide15)] (PPF-3,7SO15),chosen as host.High luminous efficiencies of 7.4 cd·A 1 and 27.4 cd·A 1 are achieved in red and green PLEDs,respectively,by optimizing the doping concentrations of red phosphorescent dye iridium bis(1-phenylisoquinoline) (acetylacetonate) (Ir(piq)) and green phosphorescent dye iridium tris(2-(4-tolyl)pyridinato-N,C 2) (Ir(mppy) 3).Furthermore,highly efficient white PLEDs (WPLEDs) with the Commission Internationale de l’Eclairage (CIE) coordinates of (0.35,0.38) are successfully produced by carefully controlling the doping concentration of the irid-ium complex.The obtained WPLEDs show maximal efficiencies of 14.4 cd·A 1 and 10.1 lm·W 1,which are comparable to those of incandescent bulbs.Moreover,the electroluminescent spectrum of the white device with an initial luminance of about 1000 cd·m 2 is stable,subject to constant applied current stress,indicating that good device stability can be obtained in this system.     

Observation of excitonic quenching by long-range dipole-dipole interaction in sequentially doped organic phosphorescent host-guest system

We studied the quenching mechanisms responsible for the low efficiency of thin film phosphorescence by a specially designed organic light-emitting diode with an emission layer consisting of a few repeating cells made of a sequentially evaporated host and guest. Variation of the thickness of the guest layer in each cell enables the study of the effect of molecule aggregation on the quantum efficiency. On the other hand, variation of the thickness of the host layer reveals a new long-range quenching mechanism involving a F?rster-like dipole-dipole interaction. The quantitative analysis shows that the external quantum efficiency as a function of the host layer thickness follows the characteristic of the long-range F?rster process. Our study provides a new understanding of quenching mechanisms in phosphorescent material and extends the existing knowledge on long-range energy transfer.     

Study of different roles phosphorescent material played in different positions of organic light emitting diodes

Phosphorescent materials are crucial to improve the luminescence and efficiency of organic light emitting diodes (OLED), because its internal quantum efficiency can reach 100%. So the studying of optical and electrical properties of phosphorescent materials is propitious for the further development of phosphorescent OLED. Phosphorescent materials were generally doped into different host materials as emitting components, not only played an important role in emitting light but also had a profound influence on carrier transport properties. We studied the optical and electrical properties of the blue 4,4′-bis(2,2-diphenylvinyl)-1,1′-biphenyl (DPVBi)-based devices, adding a common yellow phosphorescent material bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′] iridium(acetylacetonate) [(t-bt)₂Ir(acac)] in different positions. The results showed (t-bt)₂Ir(acac) has remarkable hole-trapping ability. Especially the ultrathin structure device, compared to the device without (t-bt)₂Ir(acac), had increased the luminance by about 60%, and the efficiency by about 97%. Then introduced thin 4,4′-bis(carbazol-9-yl)biphenyl (CBP) host layer between DPVBi and (t-bt)₂Ir(acac), and got devices with stable white color.     

Efficient red light phosphorescence emission in simple bi-layered structure organic devices with fluorescent host-phosphorescent guest system

Highly efficient red phosphorescent devices comprising a simple bi-layered structure using tris(1-phenylisoquinoline)iridium (Ir(piq)₃) doped in a narrow band-gap fluorescent host material, bis(10-hydroxybenzo [h] quinolinato)beryllium complex (Bebq₂) are reported. The driving voltage to reach 1000 cd/m² is 3.5 V in Bebq₂:Ir(piq)₃ red phosphorescent device. With a dopant concentration of as low as 4%, the current and power efficiency values of 8.41 cd/A and 7.34 lm/W are obtained in this PHOLEDs, respectively. External quantum efficiency (EQE) of 14.5% is noticed in this red phosphorescent device, promising to high brightness applications.     

两种主体材料中Ir(ppy)_3和Rubrene的能量传递特性

OLED技术被认为是最有可能取代液晶显示的全新技术,而OLED中的有机电致磷光器件是近年来的研究热点.有机电致磷光器件的发光层往往采用主客体掺杂体系,主客体分子内的能量传递是磷光发光体分子被激发的主要途径,因此选择吸收能量和传递能量好的主体材料是改进有机电致磷光器件性能的主要途径之一.文章分别以PVK和CBP作为主体材料,以磷光材料Ir(PPY)3和荧光材料Rubrene作为掺杂剂,制备了不同配比的器件,研究了主体材料和掺杂剂之间的能量传递特性.结果发现,这两种主体材料分别通过Ir(ppy)3向Rubrene传递能量是主要的能量传递机制,而且CBP作为主体时能量传递比PVK更充分.另外掺入Ir(ppy)3后的器件比不掺Ir(ppy)3的器件在相同电压下的光功率明显增强.当我们增加Ir(PPY)3的浓度时,相同电压下的光功率下降,浓度猝灭效应增强.     

磷光材料fac-tris(2-phenylpyridinato-N，C2′)iridium(Ⅲ)对不同荧光材料的敏化作用及发光机制分析

在荧光材料中掺杂合适的磷光敏化剂,可以大大提高荧光有机电致发光器件(OLED)的效率。选择磷光材料知fac-tris(2-phenylpyridinato-N,C^2′)iridium(Ⅲ)(Ir(ppy)3)分别与荧光材料4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl(DCJTB)、5,6,11,12,-tetraphenylnaphthacene(Rubrene)掺杂作为发光层,当掺杂质量比合适时,磷光材料的发光消失,得到了纯正的荧光材料的发光。同时,对磷光材料的敏化作用及发光机制进行了分析,比较了Ir(ppy)3对两种不同荧光材料的敏化作用强弱,发现Ir(ppy)3对荧光材料Rubrene的敏化作用更强。对影响敏化作用的因素进行了分析,推测其原因与磷光材料和荧光材料的相容性质有关。     

Phosphorescent iridium(III) complexes with hetero (C ˆN) ligands

In order to improve luminescence efficiency, it is necessary to design a phosphorescent material which is capable of transferring the excited energy without triplet–triplet (T–T) annihilation. For this purpose, new types of metal complexes were designed with different species of (C ˆN) ligands. Herein, Ir(ppy)₂(piq), Ir(ppy)₂(piq-F) and Ir(ppy)₂(piq-CF₃) were designed and prepared, where ppy, piq, piq-F and piq-CF₃ represent 2-phenylpyridine, 1-(phenyl)isoquinoline, 1-(4′-fluorophenyl)isoquinoline and 1-(4′-trifluoromethylphenyl)isoquinoline, respectively. These Ir(III) complexes having two different ligands (hetero-Ir complexes) are expected to have a high luminescence efficiency by intramolecular energy transfer from the energy absorbing ligand to the luminescent ligand leading to a decrease in quenching or energy deactivation. To compare luminescent characteristics of these hetero-Ir complexes, homo-Ir complexes Ir(ppy)₃, Ir(piq)₃, Ir(piq-F)₃ and Ir(piq-CF₃)₃ were prepared and investigated photophysically.     

Energy transfer probability in organic electrophosphorescence device with dopant

Based on the energy transfer process from host to dopant in an organic electrophosphorescent (EP) device, the expression of energy transfer probability ($\eta )$ between the host (TPD) and guest (Ir(ppy)$_{3})$ EP systems was proposed. The results show that: ({1}) The rate of the triplet energy transfer ($K_{\rm HG}$ and $K_{\rm GH})$ increases exponentially with increasing donor-acceptor molecular distance ($R$), whereas decreases as the intermolecular distance ($R_{\rm HH})$ increases from 0.8 to 2.4 nm. Furthermore, $K_{\rm GH}$ changes more quickly than $K_{\rm HG.}$ ({2}) The energy transfer probability ($\eta )$ increases as $R$ reduces, and the $R_{\rm HH}$ changes can be safely neglected for $R<$0.9 nm. The situation changes for 0.9nm$ < R < 1.1$nm, $R_{\rm HH }$ ($<1$nm) plays an essential role when $\eta $ changes and increases with the latter. However, if $R > 1.1$nm, the transfer probability will be below zero. Here, the energy transfer principle may be less important, and the high electroluminescence (EL) quantum efficiency of phosphorescent system will be attributed to the direct electron-hole recombination in phosphorescent molecules. ({3}) The $\eta $ will increase when the Forster radius ($R_{0})$ increases or Gibb's energy decreases.     

Role of annealing on morphological,linear and nonlinear properties of nanoparticle of Tris [2-phenylpyridinato-C2, N] Iridium III films prepared by electron beam evaporator

Tris(2-phenylpyridinato-C₂, N] Iridium III, Ir(ppy)₃, is experimentally investigated as a novel deposited thin film. Ir(ppy)₃ thin films were fabricated by the electron beam evaporator technique. X-ray diffraction (XRD) of Ir(ppy)₃ powder is investigated to be polycrystalline with triclinic crystal. XRD pattern of Ir(ppy)₃ film and the annealed film is analyzed, and the average of crystallite size slightly increases with thermal annealing from 14 to 40 nm. The linear optical parameters were estimated and found that the annealing effect on lattice dielectric constants, dispersion energy, oscillator energy, and the ratio of carrier concentration to its effective mass. The Urbach energy and optical energy gap are estimated at different thermal annealing. On the other hand, dielectric constants and optical conductivity were estimated and found that the annealing plays a remarkable role in the increasing of their values. The calculated values of third-order susceptibility were increased by thermal annealing. Thus, the thermal annealing can be utilized as a tool to modify the optical properties of Ir(ppy)₃ films, which can be used in many important applications such as high capacity communication network.     

基于7-（9H-carbazol-9-yl）-N,N-diphenyl-9, 9’-spirobi[fluoren]-2-amine主体材料的高效红色电致磷光器件

研究了基于新型骨架7-（9H-carbazol-9-yl）-N,N-diphenyl-9,9’-spirobi[fluoren]-2-amine（CzFA）双极性主体材料的红色电致磷光器件的光电特性。研究结果表明：将红色磷光染料iridium（Ⅲ）bis[2-methyldibenzo-（f,h）quinoxaline]（acetylacetonate）（Ir（MDQ）₂（acac））掺杂到CzFA主体材料中,以其制备的电致发光器件具有优良的特性,最大电流效率为27.8 cd/A,最大功率效率为21.8 lm/W,最大功率效率几乎是先前报道的主体材料为CBP器件（13.7 lm/W）的1.6倍。这种咔唑-螺二芴-二胺基团所组成的双极性主体材料对于提升磷光器件的性能起到了重要的作用。