Tunneling spin injection into single layer graphene

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO? seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.     

Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density–voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson–Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler–Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.     

Performance improvement of GaN-based light-emitting diode with a p-InAIGaN hole injection layer

The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.     

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

The characteristics of a blue light-emitting diode(LED)with a p-InAlGaN hole injection layer(HIL)is analyzed numerically.The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power,a reduction in current leakage and alleviation of efficiency droop.These improvements can be attributed to the p-InAlGaN serving as hole injection layers,which can alleviate the band bending induced by the polarization field,thereby improving both the hole injection efficiency and the electron blocking efficiency.     

具有新型双空穴注入层的有机发光二极管

采用新型双空穴注入层N, N, N', N'-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件结构:ITO/MeO-TPD(15 nm)/CuPc(15 nm)/ N, N'-Bis(naphthalen-1-yl)-N, N'-bis(phenyl)benzidine (NPB, 15 nm)/8-hydroxyquinoline (Alq₃, 50 nm)/LiF(1 nm)/Al(120 nm), 研制出高效有机发光二极管(器件D), 与其他器件(器件A, 没有空穴注入层的器件; 器件B, MeO-TPD单空穴注入层; 器件C, CuPc单空穴注入层)相比, 其性能得到明显改善. 器件D的起亮电压降至3.2 V, 比器件A, B, C的起亮电压分别降低了2, 0.3, 0.1 V. 器件D在10 V时, 其最大亮度为23893 cd/m², 最大功率效率为1.91 lm/W, 与器件A, B, C的最大功率效率相比, 分别提高了43% (1.34 lm/W), 22% (1.57 lm/W), 7% (1.79 lm/W). 性能改善的主要原因是由于空穴注入和传输性能得到了改善, 通过单空穴型器件的J-V 曲线对这一现象进行了分析. 关键词： 有机发光二极管 空穴注入层 功率效率 势垒     

Enhanced luminance of organic light-emitting diodes with metal nanoparticle electron injection layer

Improvement of the performance of organic light-emitting diodes (OLEDs) was achieved by implementing Magnesium-Nickel nanoparticles at the cathode–organic interface using pulsed laser deposition technique. The small geometry of Mg-Ni nanoparticles acts to enhance the localized electric field around them, thus increasing electron injection through tunneling, from the cathode to the organic layer. Improved current and luminance characteristics were demonstrated for both small molecule and polymer-based OLEDs when the nanoparticle layer was incorporated.     

Solution-processed WOx hole injection layer for efficient fluorescent blue organic light-emitting diode

Solution-processed tungsten oxide (s-WO_x) interfacial layer for efficient hole injection in fluorescent blue organic light-emitting diode (OLED) is demonstrated. The OLED using 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) as emitter shows luminous efficiency of 3.3 cd/A, power efficiency of 2.5 lm/W and external quantum efficiency of 4.6% with Commission Internationale d'Eclairage (CIE) color coordinates of (0.154, 0.102). Using MADN doped 1-4-di-[4-(N,N-diphenyl)amino]styryl-benzene as emitter, luminous efficiency of 10.8 cd/A, power efficiency of 6.4 lm/W and external quantum efficiency of 7.2% with CIE color coordinates of (0.167, 0.283) are achieved. Atomic force microscopy and X-ray photoelectron spectroscopy show that s-WO_x features superior film morphology and non-stoichiometry with slight oxygen deficiency. Current-voltage characteristics and impedance spectroscopy analysis indicate that s-WO_x behaves slightly enhanced hole injection and accordingly contributes to improved device performance in comparison with conventional vacuum thermal evaporation WO_x. Our results pave an alternative way for broadening WO_x application with solution process and advancing fluorescent blue OLEDs.     

Heat exchange in boundary layer on permeable plate at injection and combustion

The peculiarities of the heat and mass exchange in a laminar boundary layer with combustion at the injection of the fuel mixture H²/N² through the permeable surface are considered. It is shown that at a certain value of the injection parameter, the value of the heat flux into the wall averaged over the length has a maximum. An analytic estimate is proposed for determining the maximum heat flux at the combustion depending on the injection intensity. The obtained relations agree with the results of experimental studies and numerical modelling.     

Low-temperature and solution-processable inorganic hole injection layer for flexible quantum-dot light-emitting diodes

A low-temperature solution-processable inorganic vanadium oxide (V₂O₅) hole injection layer (HIL) was synthesized for flexible quantum-dot light-emitting diodes (QLEDs). Efficient hole injection characteristics were observed in the hole-only devices; furthermore, the process temperature of V₂O₅ was as low as 30 °C. We investigated the source of the efficient hole injection behavior using ultraviolet and x-ray photoelectron spectroscopy. The density of gap states was found to increase in accordance with process temperature reduction. Therefore, QLEDs with low-temperature solution-processable V₂O₅ HILs were fabricated on a glass substrate, which showed excellent characteristics. The maximum luminance and luminous efficiency of the device were 56,717 Cd/m² and 4.03 Cd/A, respectively. Due to the low-temperature process of the V₂O₅ HIL, it was also possible to fabricate QLEDs on a flexible plastic substrate without mechanical or thermal deformation of the substrate. Our results suggest that the low-temperature V₂O₅ inorganic HIL is a feasible alternative to organic HILs for flexible QLEDs.     

Efficient organic light-emitting diodes with zinc acetate as an effective electron injection layer

We report on the fabrication of organic light-emitting diodes (OLEDs) using a zinc acetate ((CH₃COO)₂Zn) layer as the cathode buffer layer. The results show that the device containing a (CH₃COO)₂Zn interlayer shows improved luminance and efficiency due to the Zn–N bond formation resulting in the occurrence of Alq₃ anion and also due to the band bending at the Alq₃/Al interface, which is beneficial to electron injection by lowering electron injection barrier. And the devices with structured cathodes (CH₃COO)₂Zn/LiF/Al and LiF/(CH₃COO)₂Zn/Al have a higher luminance and efficiency than the LiF/Al cathode-based device.     

Stability of supersonic boundary layer under the influence of heavy gas injection: experimental study

Experiments were performed on the influence of distributed injection of a heavy gas (elegas SF₆) into the near-wall region of the supersonic (freestream Mach number М_∞ = 2) boundary layer on its stability in relation to natural disturbances. Heavy gas injection for the case of linear development of disturbance field results in boundary layer stabilization. It was experimentally proved that the elegas injection can suppress disturbances at the frequencies higher than 15 kHz for the tested range of the streamwise coordinate.     

Effects of hole injection layer thickness on the luminescent properties of white organic light-emitting diodes

This work investigates how the thickness of the hole injection layer (HIL) influences the luminescent characteristics of white organic light-emitting diodes (WOLED). Experimental results indicate that inserting a thin HIL (<200 Å) into a WOLED without an HIL reduces the brightness and clearly changes the chromaticity because the surface of the 4,4′,4″-tris{N,-(3-methylphenyl)-N-phenylamino}-triphenylamine) (m-MTDATA) film is extremely rough. In contrast, a dense film structure and the fine surface morphology of m-MTDATA of moderate thickness (350-650 Å) provides a uniform conducting path on which holes cross the indium tin oxide (ITO)/HIL interface, improving luminescent performance, associated with the relatively stable purity of the color of the emission, with Commission Internationale 1′Eclairage (CIE) coordinates of (x = 0.40, y = 0.40). However, inserting a thick HIL (>650 Å) reduces the luminescent performance and causes red-shift, because the holes and electrons in the effective emissive confinement region become less optimally balanced. Moreover, optimizing the device structure enables a bright WOLED with CIE coordinates of (x = 0.34, y = 0.33) to reach a luminance of 7685 cd/m² at a current density of 100 mA/cm², with a maximum luminous efficiency of 1.72 lm/W at 5.5 V.     

Improved efficiencies of hybrid organic light‐emitting diodes using efficient electron injection layer

Hybrid organic‐inorganic light‐emitting diodes were developed with pristine ZnO (2.0 wt%) and Cu‐doped ZnO (2.0 wt%) as electron injection layer and iridium(III)‐bis‐2‐(4‐fluorophenyl)‐1‐(naphthalen‐1‐yl)‐1H‐phenanthro[9,10‐d]imidazole (acetylacetonate) [Ir(fpnpi)₂ (acac)] as green emissive layer (521 nm). The pristine ZnO and Cu‐doped ZnO are deposited at indium tin oxide cathode and emissive layer interface. The electroluminescent performances increased by electron injection layer–Cu‐doped ZnO compared with ZnO‐based device because Cu‐doped ZnO injects electron efficiently result in balanced h⁺ ? e^? recombination in emissive layer than ZnO‐based device. The Cu‐doped ZnO (2.0 %) device shows luminance (L) of 10 982 cd/m² at 23.0 V (ZnO, 1450 cd/m² at 23.0 V).     

Implementation of air injection into the turbulent boundary layer of aircraft wing using external pressurized flow

The possibility of using the injection of air into the incompressible turbulent boundary layer of an axisymmetric wing through a finely perforated area provided on the wing surface was studied. The air blowing was implemented via the supply of external pressurized flow through a permeable leading edge of the wing. It is shown that, with the blowing section located on the “flat” side of the wing, only an insignificant reduction in airfoil drag could be achieved. Simultaneously, the data obtained show that there exists a possibility of raising the lift-drag ratio due to a more appropriate choice of blowing-section location in the rarefaction region of the flow.     

Efficient and color-saturated inverted bottom-emitting organic light-emitting devices with a semi-transparent metal-assisted electron injection layer

We report the development of highly efficient and color-saturated green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-benzo[l]pyrano-[6,7,8-ij]quinolizin-11-one dye-doped inverted bottom-emitting organic light-emitting diode (IBOLED). This was enabled by the insertion of a silver (Ag) based semi-transparent metal-assisted electron injection layer between the ITO cathode and n-doped electron transporting layer. This IBOLED with ITO/Ag bilayer cathode with its synergistic microcavity effect achieved luminous efficiencies of 20.7 cd/A and 12.4 lm/W and a saturated CIE_x,y of (0.22, 0.72) at 20 mA/cm², which are twice better than those of the conventional OLED and have over 60% improvement on IBOLED without ITO/Ag bilayer cathode.     

Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy

Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy . At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes (OLEDs).     

Numerical simulations of shock-wave interaction with a boundary layer in the plane supersonic flows with jet injection

A supersonic air flow in a plane channel with a transverse turbulent jet of hydrogen injected through a slot on the bottom wall is simulated. The algorithm for solving the Favre-averaged Navier-Stokes equations for the flow of a perfect multispecies gas on the basis of the WENO scheme is proposed. The main attention is paid to the interaction of the shock-wave structure with the boundary layers on the upper and lower duct walls under the conditions of an internal turbulent flow. Namely, a detailed study of the structure of the flow is done, and separation and mixing depending on the jet slot width are investigated. It is found that in addition to well-known shock-wave structures produced by the interaction of the free stream with the transverse jet and the bow shock interaction with the boundary layers near the walls, an additional system of shock waves and the flow separation arise on the bottom wall downstream at some distance from the jet. The comparison with the experimental data is performed.