正性光刻胶制作光学分划图形技术

<正> 光刻胶是为适应集成电路的需要而发展起来的一种胶种,有正性和负性二种类型。迄今为止,光学分划元件大部分仍沿用负性胶。最近我们在制作的光学零件分划图形中,用近期     

光刻胶照相镀铬法

<正> 一、前言在六十年代,我国开始用光刻胶制造晶体管集成电路,光学界也很快将这一工艺用于照相刻划了。由于光刻胶具有分辨率高、性能稳定、抗腐蚀力强等优点,所以它在光学工业中很有发展前途。在用虫胶照相复制变黑处理制取分划时,线条牢固性不好,需要用玻璃胶合保护。而用光刻胶就可以直接用照相腐蚀铬制取分划,牢固性好而不必用玻璃保护。下面介绍一种以聚乙烯醇肉桂酸酯为光刻胶的照相镀铬分划工艺。二、问题的提出及解决办法众所周知,光刻胶是应集成电路的需要而发展起来的,因此它对于相应的基体(SiO_2、Si、Al和其它金属)具有良好的粘结性。但光刻胶聚乙烯醇肉桂酸酯对玻璃的附着力是很差的,经曝光、显影后用水一冲整个膜层就会脱     

2.5D空间光滤波器设计与制备

纯相位迭代全息图可以用来设计空间光滤波器.由于介质与空气存在折射率差,空间光在经过全息干板时,会产生相位变化.文章以每个像素光刻胶的高度调制相位,设计出了 2.5D灰度全息空间光滤波器.文章还利用电子束光刻机进行灰度曝光,制备不同高度的光刻胶,通过干法刻蚀将图案刻蚀到硅片上.对电子束曝光工艺、显影参数、刻蚀工艺等进行了...     

基于ZnS金属网栅制作工艺的改进

为了制作基于ZnS的对雷达波高效电磁屏蔽的金属网栅,采用了一种新型的先胶后镀的光刻复制工艺。但在制作过程中,发现影响金属网栅成品率的主要因素为ZnS材料的颜色,即由于多晶ZnS的颜色和所用光刻胶的颜色相似,很难判断网栅是否显影彻底,进而影响真空镀膜过程中金属网栅膜的形成。结合金属网栅的制作工艺,通过采用镀一层过渡膜的方式,即采用镀膜、涂胶、显影、腐蚀、镀膜、去胶、腐蚀的工艺,有效地解决了ZnS颜色带来的影响。实验表明,采用该工艺一次性成功制作出线宽为8 μm、周期为400 μm的金属网栅。该工艺使基于ZnS金属网栅的成品率在90%以上。     

基于ZnS金属网栅制作工艺的改进

为了制作基于ZnS的对雷达波高效电磁屏蔽的金属网栅,采用了一种新型的先胶后镀的光刻复制工艺。但在制作过程中,发现影响金属网栅成品率的主要因素为ZnS材料的颜色,即由于多晶ZnS的颜色和所用光刻胶的颜色相似,很难判断网栅是否显影彻底,进而影响真空镀膜过程中金属网栅膜的形成。结合金属网栅的制作工艺,通过采用镀一层过渡膜的方式,即采用镀膜、涂胶、显影、腐蚀、镀膜、去胶、腐蚀的工艺,有效地解决了ZnS颜色带来的影响。实验表明,采用该工艺一次性成功制作出线宽为8μm、周期为400μm的金属网栅。该工艺使基于ZnS金属网栅的成品率在90%以上。     

氟化镁场镜上的调制盘光刻技术

<正> 引言调制盘在红外搜索跟踪系统中起着主要作用,它既能提供运动目标的位置信息,又能滤去强烈的背景辐射,使系统信噪比大大提高。它的制造工艺采用光刻技术。光刻是一种复印图象同化学腐蚀相结合的综合性技术,它先采用照相复印的方法,将光刻母版上的图形精确地复印在涂有感光胶的金属层上,然后利用光刻胶的保护作用对金属层进行选择性化学腐蚀,从而在金属层上得到与光刻胶相应的图案,目前采用的光刻方法是接触曝光法。     

用光刻胶制作计算机全息图和计量光栅

本文叙述了光刻胶材料的基本光化学性质;论述了用这种用材料制作浮雕型相位全息图的优点;还介绍了制作光刻胶光学元件的工艺过程,并给出实验结果。     

用拼刻法刻制大型中间板

<正> 目前,光学仪器中的分划板,其制作工艺一般采用两种手段:一是刻度;二是照相。对于简单、线条不多、线粗一致、数字和字母较少、精度不太高的分划,经常采用常规工艺即做成铜质的模板在仿刻机上进行比例缩放刻     

纳米光刻中调焦调平测量系统的工艺相关性

随着半导体制造步入1xnm技术节点时代,光刻机中的对焦控制精度需要达到几十纳米。在纳米精度范围内,硅片上的集成电路(IC)工艺显著影响调焦调平系统的测量精度。基于实际的调焦调平光学系统模型和三角法、叠栅条纹法测量原理,建立工艺相关性误差模型。研究表明,工艺相关性误差主要来源于测量光在光刻胶涂层内部的多次反射。选取3种光刻胶仿真分析发现,不同光刻胶的工艺相关性误差随光刻胶厚度的变化趋势相同,随测量光入射角(45°~85°)的增大而减小。在实验验证平台上分别测量7种工艺硅片,实验测量值与理论模型计算值差异统计平均值小于6nm。结果表明,光刻机中调焦调平系统的测量光有必要采用大入射角度,同时提高光刻胶的涂胶均匀性,以减少工艺相关性误差。     

采用溶胶凝胶协同自组装与光刻相结合的方法在反蛋白石结构薄膜中引入二维缺陷

采用溶胶凝胶协同自组装与光刻相结合的方法,在光子晶体反蛋白石结构中引入缺陷,通过溶胶凝胶协同自组装方法在硅片上垂直沉积胶体晶体复合薄膜,把BP212正性光刻胶均匀旋涂在复合薄膜上,通过曝光、显影等光刻工艺,把掩膜版图案复制在复合薄膜上,用此样品再次垂直沉积一层复合薄膜,使图案被复合薄膜覆盖.最后去除胶体微球与光刻胶图案,从而在反蛋白石结构中引入缺陷,用扫描电子显微镜对样品进行表征.分析了光刻胶图案对胶体微球排列的影响.     

Matrix Projection Exposure Using an Analogue Liquid Crystal Display Panel in Place of a Reticle

The most serious problems for the matrix projection exposure using a liquid crystal display (LCD) panel in place of a reticle are largely solved by a new breakthrough method. LCD matrix exposure is effective for small volume productions of print circuits, screen masks, micromachine parts, and other items. Since no reticles are needed, all reticle costs are saved, and turnaround times required for changing the patterns are greatly shortened. However, in the conventional method, pattern widths and positions were strictly restricted depending on the geometric size and pitch of the liquid crystal cells. In this paper, a new concept appointing the cell brightness grades continuously using an analogue interface LCD panel is proposed. Calculating the image intensity distributions for various appointments of cell brightness balances to print same wide patterns, it is clarified that the pattern widths and positions are not much different if the pattern widths are wider than 2 cell pitches of the LCD panel. Maximum width and position variations are less than ± 10% even when the patterns are printed at arbitrary positions, of course including halfway ones. The calculated results are proved by experiments using an analogue LCD panel with a cell pitch of 15 μm. Though the cell size are 13 × 10 μm², and different in x and y directions, almost same wide line-and-space patterns are successfully printed at all positions by only one exposure. It is not necessary to shift the reticle for overlapping exposures to print smooth patterns. Oblique patterns and complicated Chinese character patterns are also printed at arbitrary positions. The new breakthrough technology will make the LCD matrix exposure promising for wide uses of printing various rough patterns easily at small costs.     

激光直写光刻中线条轮廓的分析

考虑了光刻胶对光吸收作用,在已有描述胶层内光场分布模型的基础上,较为准确地推导出光刻胶层内不同深度位置的光场分布.使用迭代方法计算得到了胶层内曝光量空间分布曲线,分析了不同曝光量下胶层内的线条轮廓,为直写光刻中曝光量的选择提供了依据.实验结果分析与理论分析的结果一致.     

球面旋涂光刻胶膜厚分布的数学模型

提出了球面旋涂微米级厚度光刻胶膜层薄化率公式及径向位置演变公式,并得到了膜厚分布的演变公式。与平面涂胶相比,球面涂胶离心力及重力分量是在不断的变化。根据平面旋涂运动方程及球面面形特征,给出了球面旋涂运动方程;结合流体层流的表面条件及不可压缩流体的质量连续方程,推导出了膜厚h及径向位置r对时间t的演变公式,并得到了在径向位置r处初始厚度为h0的膜厚演变的数学模型。通过对模型参数的分析可知,球面旋涂光刻胶应采用主从轴偏心旋涂,旋涂时工件的开口应朝向侧面(旋转轴水平)。     

The three-dimensional photonic crystals coated by gold nanoparticles

We report on the fabrication of metallodielectric photonic crystals by means of interference lithography and subsequent coating by gold nanoparticles. The grating is realized in a SU-8 photoresist using a He-Cd laser of wavelength 442 nm. The use of the wavelength found within the photoresist low absorption band enables fabricating structures that are uniform in depth. Parameters of the photoresist exposure and development for obtaining a porous structure corresponding to an orthorhombic lattice are determined. Coating of photonic crystals by gold nanoparticles is realized by reduction of chloroauric acid by a number of reductants in a water solution. This research shows that the combination of interference lithography and chemical coating by metal is attractive for the fabrication of metallodielectric three-dimensionally periodic microstructures.     

Undercut structures fabricated by microtransfer printing combined with UV exposure and their applications

In this paper, the undercut structures were fabricated by microtransfer printing of metal films on the surface of photoresist combined with UV exposure and photoresist film developing. The patterned metal films were used as mask to realize the selective UV exposure of photoresist firstly. The undercut structures, which consist of the top metal films and the patterned bottom photoresist, formed in the subsequent developing process because of the lateral dissolving of photoresist at the edge of the unexposed regions. The method proposed in this paper has wider tolerance to the changing of the patterning parameters, but without effect on the patterning resolution since the metal film was used as the top layer. The undercut structures were used as separators to pattern passive-matrix display of organic light-emitting diodes (OLEDs). No visible difference of the device performance was observed compared with the OLEDs patterned by the shadow mask.     

凹球面涂布光刻胶均匀性研究

通过对离心法在凹球面上涂布光刻胶过程进行分析,阐明了离心状态下光刻胶在凹球面基底上的流动机理,结合试验提出影响凹球面涂布光刻胶膜厚均匀性的主要因素有胶液粘度、旋涂速度、旋涂时间,列举了以上因素引起的各种现象,并进行了理论分析。引用凹球面旋涂光刻胶的膜厚公式,建立了膜厚与速度关系数学模型;利用流体力学原理解释了有限圆形空间中流体速度对膜层均匀性的影响,从而解决了大曲率凹球面上制备微细图形结构的关键工艺问题,对非球面上制备微细图形具有借鉴作用。     

Three-dimensional photonic crystal of negative refraction achieved by interference lithography

A three-dimensional bicontinuous photonic crystal of a bcc lattice with all-angle negative refraction that can be achieved at optical frequencies by interference lithography is proposed. A numerical simulation of the focusing imaging of a slab of this crystal was performed to verify the property of all-angle negative refraction. The dependence of the negative-refraction frequency range on the threshold of photoresist development and on the dielectric constant is also discussed.     

弯月面涂胶及其胶厚均匀性的测量

为实现大面积基片的均匀涂胶,设计组装了一台小型弯月面涂胶样机,实验了200mm×200mm基片的涂胶。利用白光干涉光谱仪扫描测量了弯月面涂胶的胶厚分布,其胶厚均匀性峰谷值偏差低于5%。对弯月面涂胶系统引起的均匀度偏差做了初步分析研究,并对比了测试系统与经校准的台阶仪胶厚测量结果,偏差小于0.8%。     

Optimization for sinusoidal profiles in surface relief gratings recorded on photoresist

The formations of sinusoidal surface relief structures recorded in positive photoresist (Allresist AR-P 3120) have been studied and optimized for different recording parameters of gratings with spatial frequency of ～1200 grooves/mm. A stable sinusoidal pattern generated using a two-beam laser interferometric technique was recorded in thin films of positive photoresist deposited on glass substrates. Several gratings were generated by varying the exposure time of interference pattern and time of chemical development of exposed media. Time duration of exposure for 90 s and chemical development for 15 s were observed to be optimum for the translation of the sinusoidal interference pattern into nearly-sinusoidal profiled grooves in the gratings for a developer AR-300-26 of dilution of 2:1 (developer:de-ionized water).     

红外区二维光子晶体偏振分光镜透射谱分析

采用时域有限差分（Finite-Difference Time-Domain,FDTD）法模拟了垂直入射红外波段二维光子晶体偏振分光镜的透射谱,从而验证了用平面波展开方法计算的二维光子晶体能带结构.用电子束蒸发方法在光栅基板上制备了Ge/BaF2多层膜,实现了二维光子晶体偏振分光镜.实验初步证明了这种光子晶体在垂直入射时具有偏振特性,分析了实验结果与理论计算之间偏差的产生原因.