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| 激光直写光刻中线条轮廓的分析 | |
| 引用本文： | 李凤有,谢永军,孙强,曹召良,卢振武,王肇圻.激光直写光刻中线条轮廓的分析[J].光子学报,2004,33(2):136-139. |
| 作者姓名： | 李凤有 谢永军 孙强 曹召良 卢振武 王肇圻 |
| 作者单位： | 1. 南开大学现代光学研究所,天津,300071;中科院长春光机所应用光学国家重点实验室,吉林长春,130022 2. 中科院长春光机所应用光学国家重点实验室,吉林长春,130022 3. 南开大学现代光学研究所,天津,300071 |
| 基金项目： | 国家自然科学基金 (6 0 0 780 0 6 )，中科院创新基金资助项目 |
| 摘 要： | 考虑了光刻胶对光吸收作用,在已有描述胶层内光场分布模型的基础上,较为准确地推导出光刻胶层内不同深度位置的光场分布.使用迭代方法计算得到了胶层内曝光量空间分布曲线,分析了不同曝光量下胶层内的线条轮廓,为直写光刻中曝光量的选择提供了依据.实验结果分析与理论分析的结果一致. |
| 关 键 词： | 激光直写光刻 曝光量 线条轮廓 |
| 收稿时间： | 2003-04-07 |
| 修稿时间： | 2003年4月7日 |
Analyzing of Line Profile for Laser Direct Writing Lithography |
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.Analyzing of Line Profile for Laser Direct Writing Lithography[J].Acta Photonica Sinica,2004,33(2):136-139. |
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| Authors: | |
| Institution: | (1 Institute of Modern Optics, Nankai University, Tianjin 300071) (2 State Key Lab of Applied Optics,Changchun Institute of Optics, Fine Mechanics and Physics, The Chinese Academy of Sciences, Changchun,Jilin 130022) |
| Abstract: | Considering effect of the photoresist film absorbing light energy, a model for describing the intensity distribution under various depths in the photoresist is more accurately presented on the base of previous model. The numerical values of the exposure distribution are calculated by using iterative method, and its plots related to the depth in photoresist are given subsequently. Line profile in photoresist is analyzed in term of the plots of the exposure distribution under different exposure dose so as to give a scheme for choosing optimum exposure dose in laser direct writing lithography. The experimental results in laser direct writing lithography show good agreements with theoretical calculation by using this model. |
| Keywords: | Laser direct writing lithography Exposure dose Line profile |
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