磁控溅射沉积薄膜实验参数优化光谱诊断

采用磁控溅射仪、Omni-λ300系列光栅光谱仪、CCD数据采集系统和光纤导光系统等构成的等离子体光谱分析系统,采集了以Cu和Al为靶材、氩气为工作气体,射频磁控溅射法沉积硅基薄膜时的等离子体发射光谱。以CuⅠ324.754 nm,CuⅠ327.396 nm,CuⅠ333.784 nm,CuⅠ353.039 nm,AlⅠ394.403 nm和AlⅠ396.153 nm为分析线,研究了Cu和Al等离子体发射光谱强度随溅射时间、溅射功率、靶基距和气体压强等实验参数的变化。并与射频磁控溅射沉积薄膜实验参数的选择进行对比,表明发射光谱法对射频磁控溅射薄膜生长条件的优化有着很好的指导作用。     

Deposition of Ag nanostructures on TiO2 thin films by RF magnetron sputtering

Ag nanostructures on TiO₂ films were deposited by RF magnetron sputtering under variable deposition parameters, such as DC potential, RF-power and total pressure. The concentration, shape, and distribution of the deposited nanostructures and continuous Ag films on thin films of TiO₂ can be tailored by careful variation of the deposition parameters. Controllable clusterlike, islandlike and film Ag structures on TiO₂ film were obtained, respectively. DC potential was found as an appropriate parameter to tailor the change of Ag nanostructure and the overall Ag amount. The compositions, nanostructures and morphologies of nanocomposite films appreciably influence the optical response.     

直流磁控溅射制备AlN薄膜的结构和表面粗糙度

采用直流磁控反应溅射法,在Si(111)基底上成功制备了多晶六方相AlN薄膜.研究了溅射过程中溅射气压对薄膜结构和表面粗糙度的影响.结果表明:当溅射气压低于0.6 Pa时,薄膜为非晶态,在傅里叶变换红外光谱中,没有明显的吸收峰;当溅射气压不低于0.6 Pa时,薄膜的X射线衍射图中均出现了六方相的AlN(100)、(11...     

Paschen curve approach to investigate electron density and deposition rate of Cu in magnetron sputtering system

In this work, Paschen curve for argon gas was obtained during copper deposition using a DC magnetron sputtering system. Five process parameters of Paschen curve were used to obtain the electron density and deposition rate of the deposited nanostructured thin films. Plasma parameter such as electron density was correlated with the deposition rate. It is observed that a minimum deposition rate was obtained for the plasma process parameter corresponding to the Paschen minimum. This investigation helps to understand and optimize the quality of nanostructured thin films depending on the process parameters.     

The behaviors of the carrier concentrations and mobilities in indium-tin-oxide thin films by DC and RF-superimposed DC reactive magnetron sputtering at the various process temperatures

Indium-tin-oxide (ITO) thin films were deposited by DC and RF-superimposed DC (RF-DC) reactive magnetron sputtering at the various process temperatures from 70 to 380 °C. And the behaviors of the carrier concentrations and mobilities in ITO thin films by different plasma excitation modes were investigated by means of the Hall technique. The relationship between the carrier concentrations and mobilities in ITO thin films by both DC and RF-DC sputtering had two distinct regions: (i) region I at low process temperatures, where both the carrier concentrations and mobilities increased together; (ii) region II at high process temperatures, where the carrier concentrations further increased but the carrier mobilities decreased.At low process temperatures of region I, the crystallinities were low and the grain boundary scattering was dominant. However, at high process temperatures of region II, ITO thin films were highly crystallized and the ionized impurity scattering from high carrier concentrations was dominant.The overall characterizations, related to the carrier concentrations and mobilities, were also performed using X-ray diffractometer, scanning electron microscopy, UV/vis/NIR spectrometer and atomic force microscope.     

纳秒单脉冲激光诱导AgInSbTe薄膜的相变特性

利用磁控溅射法在K9玻璃基底上制备了Ag8In14Sb55Te23(AIST)纳米薄膜,并利用激光抽运-探测技术测量了薄膜的时间分辨反射率变化特性。研究结果表明,在合适能量密度的单脉冲纳秒激光脉冲作用下,AIST薄膜可以快速从沉积非晶态转化为晶态结构,晶化过程包含中间熔化态。在较低能量密度范围内,反射率变化量和晶化时间都随能量密度变化呈线性增加趋势。     

Influence of the Argon Pressure at dc Magnetron Sputtering on Contaminations in CrSi Thin Films

This paper deals with the influence of process parameters, especially of argon pressure, power, and target-substrate spacing on impurity content and properties of Cr-Si thin films deposited by dc magnetron sputtering in a non-heated high vacuum apparatus. The results confirm the well-known fact that in such a unit by means of a magnetron pure films can be produced without any difficulties. However, this has proved to be possible only in the case of low argon pressure being preferentially employed in magnetron sputtering. Boosting the argon pressure yields drastic film contaminations by oxygen and hydrogen, which are caused by a reinforced release of adsorbats from the apparatus walls under these operating conditions. A high argon pressure effects simultaneously a change in the film microstructure resulting together with the contaminants in modified electrical properties.     

氧化钒薄膜微观结构的研究

采用直流磁控反应溅射在Si(100)衬底上溅射得到(001)取向的V₂O₅薄膜.x射线衍射(XRD)、扫描电镜(SEM)和傅里叶变换红外光谱(FTIR)的结果表明，氧分压影响薄膜的成分和生长取向，在氧分压0.4Pa时溅射得到(001)取向的纳米V₂O₅薄膜，即沿c轴垂直衬底方向取向生长的薄膜.V₂O₅薄膜经过真空退火得到(001)取向的VO₂薄膜，晶体颗 关键词： 微观结构 氧化钒薄膜 择优取向 直流磁控溅射     

Spectral and X-Ray Studies of Indium Oxide Films on Sapphire Substrates

Optics and Spectroscopy - The results of studying the optical transmission and X-ray diffraction spectra of thin In2O3 films obtained by DC magnetron sputtering on Al2O3 (012) substrates are...     

Fluctuating in the hopping rate of CuO thin films with respect to substrate temperature

Electrical transport properties in CuO thin films processed using d.c. magnetron sputtering technique is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent conductivity of the investigated films is controlled by the multi-phonon hopping conduction mechanism. A detailed analysis in terms of carrier hopping parameters is used to correlate electrical transport properties with the d.c. magnetron sputtering conditions.     

直流磁控溅射厚度对Cu(Inx,Ga1-x)Se2背接触Mo薄膜性能的影响

采用直流磁控溅射工艺, 在一定条件下通过控制溅射时间, 在钠钙玻璃上制备了不同厚度的用于Cu(In_x, Ga_1-x)Se₂薄膜太阳电池背接触材料的Mo薄膜, 并利用X射线衍射 (XRD)、场发射扫描电子显微镜 (SEM)、四探针测试仪、台阶仪研究了厚度对溅射时间、薄膜微结构、电学性能及力学性能的交互影响. Mo薄膜的厚度与溅射时间呈线性递增关系; 随厚度的增大, Mo薄膜 (110) 和 (211) 面峰强均逐渐增大, 择优生长从(110)方向逐渐向 (211)方向转变, 方块电阻值只随 (110) 方向上的生长而急剧减小直到一特定值约2 Ω/⇑, 电导率随薄膜的 (110) 择优取向程度的降低而线性减小直到一特定值约0.96×10^-4 Ω·cm; Mo薄膜内部是一种多孔的长形簇状颗粒和颗粒间隙交织的结构, 并处于拉应力态, 其内部应变随薄膜厚度的增大而减小. 关键词： Mo薄膜 CIGS背接触 厚度 微结构     

直流磁控溅射镀膜实验条件的选择

介绍一台改制的直流以磁控溅射镀膜机用于溅射镀膜实验,选择实验条件,观察实验现象,得到多层薄膜。     

Synthesis and characterization of Al-N codoped p-type ZnO epitaxial films using high-temperature homo-buffer layer

Al-N codoped p-type ZnO thin films have been prepared by DC magnetron reactive sputtering reproducibly using a high-temperature (HT) homo-buffer layer. The influence of HT buffer layer deposition time (T_ht) on film properties was investigated by X-ray diffraction (XRD), scanning electron micro-spectra (SEM) and Hall measurement. The Al-N codoped ZnO film was improved evidently in its crystal quality by varying the value of T_ht. Results of Hall effect showed that all of the Al-N codoped ZnO thin films were p-type conduction and had resistivity mainly below 50 Ω cm. The optimum deposition time of HT buffer layer is around 3 min from the comprehensive consideration of structural, electrical, and optical properties. The obtained ZnO thin film can meet the need of application in optoelectronic devices based on ZnO.     

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

Thin films of p-type transparent conducting CuAlO₂ have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O₂ atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO₂ thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.     

NbN薄膜的制备与性能研究

采用磁控溅射和直流偏压二极溅射两种方法制备了NbN薄膜。用XRD和TEM测量比较了两种不同溅射方法获得的NbN薄膜的特点,并测量了NbN薄膜的超导转变温度T_c。采用两种溅射方法都得到了致密、均匀、单一δ相的多晶NbN薄膜,薄膜生长的择优取向受温度和氮气流量的影响很大,薄膜的超导转变温度受溅射室本底真空影响较大。     

Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique

Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique. A three-layer model based on transmission line theory and the genetic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interracial thermal resistance. The results show that the average thermal conductivity of 330- 1000nm aluminium oxide thin films is 3.3 Wm^-1K^-1 at room temperature. No significant thickness dependence is found. The uncertainty of the measurement is less than 10%.     

Fabrication of low phase transition temperature vanadium oxide films by direct current reactive magnetron sputtering and oxidation post-anneal method

Vanadium oxide thin films were deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target and subsequent oxidation annealing. The deposition and annealing parameters were given in detail. The samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM). The phase transitions of films were observed by measuring their electrical and optical property variations at different temperature. The results indicated that the films fabricated had a semiconductor–metal phase transition temperature of about 30 °C.     

Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering

Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42° at 350 °C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak (∼485 nm) and green peak (∼527 nm) increased noticeably after annealing. The origin of these emissions was discussed.     

用于彩色滤光片的低阻低应力ITO透明导电膜

探讨了用于彩色滤光片的低电阻和低压应力的ITO透明导电膜工艺。用磁控溅射方法在不同温度的衬底上制备了ITO薄膜。研究了膜形衬底温度与膜结晶化程度的关系,以及膜形衬底温度对膜电阻和压应力的影响。对不同衬底温度下形成的ITO薄膜进行了退火处理,并对退火后的ITO薄膜的电阻和压应力特性进行了分析。结果表明,采用室温沉积非晶态ITO膜,在真空退火下可获得低电阻、低压应力的多晶相ITO膜。     

纳米Cu3N薄膜的制备与性能

采用柱状靶多弧直流磁控溅射法，100℃基底温度下在玻璃衬底上制备了纳米氮化铜(Cu3₃N)薄膜.用x射线衍射研究了不同氮气分压对Cu3₃N薄膜晶体结构 及晶粒尺寸的影响.结果显 示薄膜由Cu3₃N和Cu的纳米微晶复合而成，其中Cu3₃N纳米微晶具有 立方反ReO3₃结构.通 过原子力显微镜对薄膜表征显示，膜表面比较光滑，具有较低的粗糙度.x射线光电子能谱对 薄膜表面的成分分析表明，Cu3 _{关键词： 氮化铜薄膜 多弧直流磁控溅射 3}结构')" href="#">立方反ReO3₃结构