干涉法诊断由纳秒激光诱导产生的大气等离子体的电子密度

通过改进的马赫-曾德尔干涉仪获得了高质量的Nd:YAG激光诱导大气等离子体干涉条纹图.利用快速傅里叶变换（FFT）分析法恢复了干涉图波面,通过Abel逆变换进行密度反演,重建了不同时刻激光等离子体电子密度的三维分布,并得到了激光等离子体膨胀速度与延迟时间的关系.结果显示,纳秒激光诱导大气击穿形成的等离子体具有等离子体通道结构,等离子体膨胀速度的迅速衰减,对等离子体通道的塌陷起到了促进作用,等离子体形状的离心率在大约48 ns时达到最大值,然后开始向圆形演变. 关键词： 激光等离子体电子密度 干涉测量 Abel逆变换     

准分子激光等离子体开关控制脉宽研究

 利用准分子激光等离子体技术，在紫外预电离XeCl准分子激光器上获得了最短1.58 ns的短脉冲激光输出。实验中分析了聚焦到薄膜表面的光束能量密度对所产生的等离子体密度的影响，并对不同等离子体密度及维持时间情况下脉冲压缩效果进行了讨论，给出了激光器谐振腔在稳定腔及非稳腔两种工作方式下的实验结果。激光器在稳定腔工作时，脉宽可压缩至2.87 ns；采用非稳腔结构时，在脉冲能量不变情况下减小聚焦光斑面积，提高入射到薄膜表面的能量密度，得到了最短1.58 ns的短脉冲激光输出。该技术适用于任何其它准分子器件。     

全息术诊断激光产生蒸汽羽等离子体

介绍了用脉冲激光全息二次曝光法诊断Q开关钕玻璃激光脉冲与LY12铝靶(φ50×3)耦合产生蒸汽羽等离子体的原理和实验。在打靶激光脉宽约50ns,功率密度约5GW/cm~2条件下,拍摄了激光产生蒸汽羽等离子体的全息干涉图。运用Abel变换和Saha方程,对全息干涉图进行数据处理,得到对激光与物质相互作用机理研究的有用参数。     

激光干涉法诊断空气开关等离子体的技术研究

介绍了激光干涉技术用于诊断等离子体的基本原理、实验装置及图像处理方法等,通过Mach-Zehnder激光干涉仪诊断了空气开关等离子体。结果表明,该实验装置能够获得高质量的干涉图。通过对干涉图的数值处理,重建了等离子体电子密度的三维分布。空气开关放电后75ns时刻,等离子体的平均电子密度为2×10~(18) cm~(-3),电子温度为0.11eV,等离子体半径为1.1mm,扩散速度为1.4×10~4 m/s。     

皮秒和纳秒单脉冲激光加热Al/NC复合纳米含能材料的热动力学分析

对纳米金属颗粒复合含能材料这一新兴体系的单脉冲激光作用的热动力学过程进行了理论分析. 推导了分散在介质中的纳米金属颗粒吸收脉冲激光能量的瞬时功率密度. 从热分解机理出发对纳米金属铝复合硝化纤维(Al/NC)薄膜吸收脉冲激光能量过程以及伴随着放热化学反应的热点热量传播过程进行了数值模拟,计算了不同质量分数的Al/NC薄膜样品分别在100ps,10ns,25ns脉冲激光作用下的化学反应直径. 计算结果与实验数据相比较,表明了热分解基本符合10ns,25ns脉冲激光引发含能材料反应的机理,但它并不符合100ps 关键词： 热分解 化学反应 脉冲激光 含能材料     

等离子体闪光法识别薄膜损伤的误判消除方法

传统的等离子体闪光法,是根据探测器是否接收到来自薄膜样片周围发射的闪光信号,对薄膜是否发生损伤进行评判,这样的评判方法极易把空气与薄膜的等离子体闪光混淆而发生误判。为了消除这种误判,提出通过比较空气和薄膜各自的等离子体闪光的点燃时间,利用两者时间上的差异,实现对传统等离子体闪光法误判现象的消除方法。为了验证新方法的可靠性,借助于多光子吸收和级联电离理论,建立了空气等离体子体点燃时间的计算模型,根据薄膜与激光的相互作用原理建立了薄膜被击穿时的等离子体点燃时间计算模型,利用建立的模型仿真计算了空气和薄膜的等离子体闪光点燃时间分别为1.856和7.843 ns;搭建实验装置以实现对传统等离子体闪光法的更新,在装置中的不同位置设置三个光电探测器分别采集入射激光信号、空气和薄膜等离子体闪光信号,采集入射激光信号的光电探测器置于聚焦透镜的侧面,另外两个探测器位于薄膜样片周围且左右对称放置,分别用于采集薄膜的等离子体闪光信号和空气的等离子体闪光信号,所有光电探测器采集的信号转换为电信号后同步传输至示波器,以入射激光信号为基准信号,其与空气和薄膜等离子体闪光信号的起始时刻之差,分别为空气和薄膜等离子体闪光点燃时间。脉宽为10 ns、波长为1 064 nm的Nd∶YAG脉冲激光以0.015 cm的聚焦光斑半径、82.4 mJ的入射能量作用于光学厚度为λ/4、直径为20 mm的单层Al₂O₃薄膜样片上后,采集上述激光作用条件下的各路信号,经处理后得到的空气和薄膜的等离子体闪光点燃时间测试值分别为2.7和7.8 ns;理论计算和实验测试结果表明,空气的点燃时间总是小于薄膜的点燃时间,二者有很好的一致性。说明当强激光作用于单层Al₂O₃薄膜表面时,空气等离子体闪光先于薄膜等离子体闪光发生。基于空气和薄膜等离子体闪光点燃时间上的这种差异,利用闪光信号时间上的差别就可准确分辨出薄膜是否发生损伤,从而获得识别薄膜损伤与否的判据,这种从时间差异上识别薄膜等离子体闪光损伤的新方法,无论从理论上还是实验上均为传统等离子体闪光法误判现象的消除提供了技术基础。     

激光场对光学薄膜的作用

采用Mach-Zehnder干涉仪和光学延迟装置研究了Q开关激光与膜料折射率大于基底折射率和膜料折射率小于基底折射率的二类单层光学介质薄膜多次重复作用产生的等离子体形貌,从而对激光与介质薄膜相互作用的场效应进行了实验验证。     

脉冲准分子激光淀积薄膜的实验研究

利用两种脉宽 (30ns,5 0 0fs)的KrF准分子激光展开了淀积类金刚石薄膜的实验研究 ,并且成功地制备了大面积不含氢成分的HF DLC薄膜 ,运用时空分辨的等离子体发射光谱诊断系统和离子探针系统研究了等离子体特性对薄膜性能的影响。尝试了利用准分子激光制备非晶硅薄膜 ,研究了实验参数对非晶硅薄膜制备的影响 ,并分析了制备具有良好电学和光学性能的非晶硅薄膜的条件     

脉冲准分子激光淀积薄膜的实验研究

 利用两种脉宽(30ns，500fs)的KrF准分子激光展开了淀积类金刚石薄膜的实验研究，并且成功地制备了大面积不含氢成分的HF-DLC薄膜，运用时空分辨的等离子体发射光谱诊断系统和离子探针系统研究了等离子体特性对薄膜性能的影响。尝试了利用准分子激光制备非晶硅薄膜，研究了实验参数对非晶硅薄膜制备的影响，并分析了制备具有良好电学和光学性能的非晶硅薄膜的条件。     

两幅差分干涉诊断铝丝阵Z箍缩等离子体

研制了两幅激光差分干涉诊断系统,可在一次实验中获得两幅间隔3～12 ns的高分辨干涉图像。该系统采用分光延时装置产生两束有一定夹角和时间间隔的探测激光脉冲,采用特殊的偏轴4f传像系统在同一块CCD的不同区域产生两幅干涉图像。应用该系统开展了铝丝阵Z箍缩激光干涉诊断实验,获得了丝膨胀和消融、晕等离子体产生和发展、以及先驱等离子体产生和发展等Z箍缩演化过程的实验图像,并给出了Z箍缩早期阶段的等离子体电子密度分布。     

Pulsed laser deposition of Er:BaTiO3 for planar waveguides

Laser radiation is used for the deposition of dielectric erbium doped BaTiO₃ thin films for photonic applications. Pulsed laser deposition with KrF excimer laser radiation (wavelength 248 nm, pulse duration 20 ns) is used to grow dense, transparent, amorphous, poly-crystalline and single crystalline erbium doped BaTiO₃ thin films. Visible emission due to up-conversion luminescence (wavelength 528 nm and 548 nm) under excitation with diode laser radiation at a wavelength of 970–985 nm is investigated as a function of the erbium concentration of 1–20 mol% and structural film properties. PACS 81.15.Fg; 42.55.Wd; 68.55; 78.55.Hx     

Al<Subscript>2</Subscript>O<Subscript>3</Subscript> plasma production during pulsed laser deposition

A Nd:YAG laser operating in second harmonic (532 nm), 3 ns pulse duration, 150 mJ pulse energy, and 10 Hz repetition rate, is employed to irradiate Al₂O₃ target placed in high vacuum. The produced plasma is investigated by an ion collector used in time-of-flight configuration and by a mass quadrupole spectrometer, in order to determine the equivalent plasma temperature and the atomic and molecular composition. Pulsed laser deposition technique has been used to produce thin films on different substrates placed close to the target. Different surface analyses, such as energy dispersive X-ray fluorescence (EDXRF), X-ray photoelectron spectroscopy (XPS) and surface profilometry are employed to characterize the produced films. Measurements of ablation yield, plasma equivalent temperature, acceleration voltage and characterization of grown thin films are presented and discussed.     

缺氧La0.6Ca0.4MnO3-δ薄膜的光响应特性

采用波长均为532 nm的连续激光和脉冲激光研究了缺氧La0.6Ca0.4MnO3-δ(LCMO)薄膜的光响应特性。分析了在金属态和绝缘态时,缺氧对LCMO薄膜光响应的不同影响。在脉冲宽度7 ns、峰值功率750 mW的脉冲激光作用下,缺氧LCMO薄膜在室温下呈现出明显的光响应信号,其光电导增大36.4%,上升时间约30 ns。由于光子能量大于LCMO的禁带宽度,光子注入在薄膜中产生了电子-空穴对,而电子很容易被氧空位俘获,从而在薄膜中产生大量额外的空穴载流子,大量的空穴载流子可能诱发局域绝缘-金属相变,从而在薄膜中产生明显的光电导效应。实验显示出缺氧钙钛矿薄膜在光电器件上的巨大应用潜力。     

Optically tuned dielectric characteristics of SrTiO_3/Si thin film in the terahertz range

Active control of the optical parameters in strontium titanate(SrTiO_3, STO) thin films is highly desirable for tunable terahertz(THz) integrated devices such as filters, phase modulators, and electro-optical devices. In this work, optically tuned dielectric parameters of a STO thin film epitaxially grown on a silicon wafer were characterized in the THz region with an 800 nm laser pump-THz detection system. The refractive index, extinction coefficient, and complex dielectric constant of the STO thin film were calculated using thin-film parameter extraction. Owing to carrier transportation and soft-mode oscillation, the above optical parameters changed notably with the pump power of the external laser. This study is of great significance for rapid and non-contact THz phase-modulation technology and may serve as a powerful tool to tune the dielectric properties of the STO thin films.     

Si—OH基团对SiCOH低k薄膜性能的影响与控制

研究了十甲基环五硅氧烷(D5)的电子回旋共振等离子体沉积的SiCOH薄膜中Si—OH基团对介电性能和漏电流的影响.结果表明Si—OH含量的增大会导致介电常数k的增大、漏电流的降低和介电色散的增强.由于Si—OH结构的强极化补偿了薄膜密度减小带来的介电常数降低，导致总的介电常数k增大.高Si—OH含量下漏电流的降低是由于封端的Si—OH基团降低了薄膜中Si—O网络的连通概率p而导致网络电导下降的缘故.介电色散的增强与Si—OH封端结构的快极化过程有关.改变放电参数以提高电子能量，从而提高源的电离程度，使更多的Si—OH基团断裂并通过缩合反应形成Si—O—Si网络，可以进一步降低薄膜的介电常数. 关键词： SiCOH薄膜 Si—OH结构 介电性能 ECR放电等离子体     

Room-temperature pulsed laser deposition and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on conductive substrates

Bi_3.95Er_0.05Ti₃O₁₂ (BErT) thin films were prepared on Pt/Ti/SiO₂/Si and indium-tin-oxide (ITO)-coated glass substrates at room temperature by pulsed laser deposition. These thin films were amorphous with uniform thickness. Excellent dielectric characteristics have been confirmed. The amorphous BErT thin films deposited on the Pt/Ti/SiO₂/Si and ITO-coated glass substrates exhibited almost the same dielectric constant of 52 with a low dielectric loss of less than 0.02 at 1 kHz. Meanwhile, the dielectric properties of the thin films had an excellent bias voltage stability and thermal stability. The amorphous BErT thin films might have potential applications in microelectronic and optoelectronic devices.     

淀积气压对脉冲激光淀积La掺杂钛酸铅薄膜介电性能的影响

利用脉冲激光淀积法在Pt/Ti/SiO2/Si衬底上制备了28mol%La掺杂钛酸铅薄膜.采用不同的淀积氧气压，并分析了其对薄膜微观结构和介电性能的影响.结果表明，在2Pa左右的气压下淀积的薄膜具有好的结晶度和介电系数.在频率为10kHz时28mol%La掺杂钛酸铅薄膜的介电系数达852，并且保持了较低的损耗.同时制备了其他La掺杂浓度的PbTiO3薄膜，发现它们也有类似的特点.对此作了定性解释. 关键词： 脉冲激光淀积 PLT薄膜 气压 介电增强     

溶胶-凝胶ZrO_2/SiO_2薄膜的激光损伤研究

采用溶胶-凝胶工艺分别制备了SiO2和ZrO2单层薄膜、ZrO2/SiO2双层膜以及ZrO2/SiO2多层高反膜。用输出波长为1064nm、脉宽为6.3ns的YAG激光器对薄膜进行了激光损伤实验。观察了薄膜经强激光辐照后的损伤情况,讨论了薄膜的激光损伤行为,并从理论上分析了产生这些损伤的原因,为进一步镀制高质量的ZrO2/SiO2多层高反膜提供了依据。     

硅,锗片的激光损伤及加固研究

利用ＹＡＧ脉冲激光在二种脉宽下（１０ｎｓ、２５０μｓ），对Ｓｉ、Ｇｅ片进行了损伤研究，分别给出了表面损伤机制，并利用镀金风石膜、介质膜和激光预辐照进行加固，讨论了加固效果。     

Experimental and numerical investigations of heat transport and crystallization kinetics in laser-induced modification of barium strontium titanate thin films

Barium strontium titanate (BST) has a large application potential in microelectronics due to its implementation as a high-permittivity dielectric in thin-film capacitors. Technologies are therefore being investigated for the deposition of the ceramics as thin films onto semiconductor components. A two-step process will be presented in this paper: first, the deposition of an amorphous ceramic thin film on a platinum-coated silicon wafer and, secondly, the laser sintering of this film. A laser process with pulsed UV light of 248-nm and 193-nm wavelength and approximately 20-ns pulse length allows us to reduce the thermal load on the substrate during the sintering process by minimizing the interaction time between the heating source and the ceramic layer. The goal of this work is to investigate fundamental aspects of the solid-state physics and process technology during the laser sintering of amorphous, electroceramic thin films. Adjusting the film thicknesses prevents damage to the ceramic thin films by the laser treatment. Planar test structures are manufactured and characterized structurally and electrically. Characterization of the BST films reveals clearly improved dielectric properties in comparison to the amorphous films. The real part of the dielectric constant can be raised three- to fivefold at 10 kHz, while the imaginary part decreases by nearly an order of magnitude. Chemical analysis does not indicate any significant changes in the stoichiometry of the thin films due to the laser process. The laser-induced changes proceed similarly to the crystallization of the amorphous films in the furnace. Parallel to the experimental work, a numerical simulation model is developed, which, on the basis of thermal conduction, the Johnson–Mehl–Avrami crystallization kinetics, and thermoelasticity, models the temperature, crystallization, and mechanical load of the thin films. The simulation calculations are correlated with the results of the analysis of the laser-treated samples. PACS 77.84.Dy; 61.80.Ba; 77.55.+f