金属纳米团簇复合薄膜Au/BaTiO3与Fe/BaTiO3的PLD制备及其光吸收特征

用脉冲激光沉积技术制备了掺杂纳米金属颗粒Au或Fe的BaTiO₃复合薄膜.用透射电子显微镜和x射线光电子能谱表征了金属颗粒的形态和化学态.330—800nm范围的吸收谱研究表明，掺Au颗粒的BaTiO₃薄膜在580nm附近有一个明显的共振吸收峰，而掺Fe颗粒的BaTiO₃薄膜没有这样的吸收峰.用Mie散射理论对结果进行了分析. 关键词： 复合薄膜 金属颗粒 脉冲激光沉积 吸收谱     

Selective deposition of Au films on GaAs by projection-patterned excimer laser doping combined with electroless plating

Resistless microfabrication of Au thin films on n-type GaAs by projection-patterned laser doping using a KrF excimer laser and a 10% SiH₄-He gas is described. Gold thin films with a linewidth as narrow as 1.57 m are deposited selectively on the doped regions by electroless plating in a commercial Au-24s aqueous solution. The isotropic growth of the deposited films is discussed by comparing the linewidth of the deposited films with that of the doped regions. Furthermore, the dependence of the deposition characteristics of Au thin films on the laser irradiation conditions is investigated.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

Dielectric properties of SrZrO3 thin films prepared by pulsed laser deposition

SrZrO₃ (SZO) thin films have been prepared on Pt-coated silicon substrates and directly on Si substrates by pulsed laser deposition (PLD) using a ZrSrO target at a substrate temperature of 400 °C in 20 Pa oxygen ambient. X-ray –2 scans showed that the as-deposited films remain amorphous at a substrate temperature of 400 °C. The dielectric constant of SZO has been determined to be in the range 24–27 for the Pt/SZO/Pt structure. Capacitance–voltage (C–V) characteristics of a metal-oxide-semiconductor (MOS) structure for SZO films deposited in 20 Pa oxygen ambient and 20 Pa nitrogen ambient (SZON) indicated that incorporation of nitrogen during the substrate heating and film deposition can suppress the formation of an interfacial SiO₂ layer, and the SZON films have a lower equivalent oxide thickness (EOT) than that of the SZO films. However, the leakage current of the SZON films is larger than that of the SZO films. The EOT is about 1.2 nm for a 5-nm SZON film deposited at 400 °C. The leakage-current characteristics of as-deposited SZON films and SZON films post-annealed in oxygen ambient by rapid thermal annealing (RTA) have been studied comparatively. The films post-annealed with RTA have a lower leakage current than the as-deposited SZON films. Optical transmittance measurements showed that the band gap of the films is about 5.7 eV. It is proposed that SrZrO₃ films prepared at 400 °C are potential materials for alternative high-k gate-dielectric applications. PACS 77.84.Bw; 77.84.-s; 77.55.+f     

Growth of polycrystalline La0.5Sr0.5CoO3 films by femtosecond pulsed laser deposition

In this paper we present the growth of La_0.5Sr_0.5CoO₃ (LSCO) films on MgO, quartz, and silicon substrates by pulsed laser deposition (PLD) using a Ti:sapphire laser (50 fs, 800 nm wavelength). The morphology and the structure of the films were studied by X-ray diffraction, atomic force microscopy, and scanning electron microscopy. The films were polycrystalline and exhibit a good adherence to the Si substrate. Different deposition parameters such as substrate temperature, oxygen pressure, and laser fluence were varied to achieve good surface quality and low resistivity crystalline films. We also defined the optimum conditions in which the deposited film surface is particulate free. The best films (droplets free) were grown at 625 °C, in an ambient oxygen pressure of 6 mbar, with an incident laser fluence of 0.19 J/cm². This is a mandatory step in the complex work of fabricating La_0.5Sr_0.5CoO₃/BaTiO₃/La_0.5Sr_0.5CoO₃ heterostructures for the development of thin film capacitors for non-volatile ferroelectric access memory devices. PACS 81.15 Fg; 42.62-b; 68.65.Ac     

Observation of the early stages of growth and the formation of growth spirals in epitaxial YBa2Cu3O7-δ thin films by AFM

Ultrathin epitaxial films of YBa₂Cu₃O_7– on SrTiO₃ prepared by Direct Current (DC) sputtering and pulsed laser deposition were imaged by Atomic Force Microscopy (AFM) to follow the different stages of growth of the thin films. Series of films with thicknesses between 1.2 nm and 12 nm (1–10 monolayers of YBa₂Cu₃O_7–) were prepared under identical conditions, optimized with respect to electrical and structural properties, to obtain information on the mechanisms responsible for the formation of growth spirals which are commonly observed in films having a thickness of several 10 nm or more. It could be shown that few layers are formed by a layered growth mode where material is attached laterally to 2D islands which are only one c-axis unit cell in height. In a later stage of growth when about 8–10 layers have been formed, the growth process changes to a mode which is mediated by growth spirals. This could be directly monitored in the AFM images where different defect structures like vertically sheared growth fronts and dendrite-like terraces of stacked islands as well as the resulting growth spirals could be identified.     

Photokinetic etching of polyethylene terephthalate films by continuous wave ultraviolet laser radiation

Continuous wave laser radiation from an argonion laser in the wavelength range 275–330 nm can be used to etch polyethylene terephthalate (PET) films with as little thermal damage as from a pulsed, ultraviolet laser (248 nm or 308 nm) provided the beam is focussed to a spot of 10–100 kW/cm² of power density and is moved over the surface at speeds at which the transit time over its own diameter (which can be looked upon as a pulse width) is on the order of 10–200 s. In contrast to results which had been obtained previously on the photokinetic etching of polyimide and doped polymethyl methacrylate films under similar conditions, the sensitivity of PET to etching is >5-fold greater than either of these polymers and increases steadily with increasing pulse width. There is lateral thermal damage as the pulse widths increase to >200 s. The material that is removed is vaporized in part. More than 20% is probably ejected in a molten state and resolidifies at the edge of the cut. There is no acoustic report similar to that seen in ablative photodecomposition. The process appears to be largely thermal in nature.     

Barium ferrite (BaFe12O19) thin films prepared by pulsed laser deposition on MgO buffered Si substrates

Barium ferrite (BaFe₁₂O₁₉) thin films have been deposited by pulsed laser deposition (PLD) on Si substrates with MgO underlayers. The films were deposited in oxygen atmosphere by excimer laser (=248 nm, pulse duration=23 ns) in the temperature range 750–900 °C. The experiments showed that the substrate temperature has remarkable effect on the films magnetic and structural properties. The BaFe₁₂O₁₉ films deposited at 900 °C in 200 mTorr oxygen showed some perpendicular orientation, with a perpendicular squareness of 0.5 and an in-plane squareness of 0.3. Such thin BaFe₁₂O₁₉ films have platelet grains with a size of about 300 nm. The perpendicular saturation magnetization and coercivity are 185 emu/cm³ and 1.4 kOe, respectively. PACS 81.15.Fg.; 75.70.Ak; 75.50.Pp; 68.55.j     

Optical bistability in fluorescein dyes

Optical bistability has been observed in highly concentrated fluorescein dye solutions and in thin (1 m) doped polymeric films. At concentrations larger than 10^–5 mole/l dye dimers are formed. For fluorescein dye, the dimer-monomer equilibrium constant is 10⁵ l/mole so that most of the dye species are in the dimer form. At 480 nm the dimer absorption cross section is 10^–18 cm²/molecule, while that for the dye monomer molecule is 7.6×10^–17 cm²/molecule. Upon laser excitation dimers dissociate to form monomers thus providing a highly nonlinear laser induced absorption. This high nonlinear absorption coefficient can be utilized for optically bistable response of the dye system.Optical bistability was observed by placing dye solutions or dye thin films inside a Fabry-Perot resonator and exciting it with 480 nm dye laser pulses of 10 ns duration. The effect is more pronounced in 10^–4 mole/l fluorescein than in 10^–6 mole/l fluorescein in which dimer formation is not that efficient.In disodium fluorescein no significant dimer formation is observed even at 10^–3 mole/l dye concentration. The observed bistability both in solution and in thin films can be explained in terms of recent models for optical bistability in nonlinearly absorbing molecular systems.     

Pulsed laser deposition of hard coatings in atmospheric air

A new laser plasma technique for non-vacuum deposition of thin films has been proposed and experimentally realized. It is based on the fact that the plasma plume, which occurs under ablation of a target in air by high-intensity short laser pulses, can penetrate through a dense gas environment without significant cooling at the distance of about 1 mm. The technique has been applied to deposit diamond-like carbon (DLC) coatings on stainless steel substrates using four different values of pulse duration: 10 ns, 300 ps, 5 ps and 130 fs. Optimization of different experimental parameters including distance between the target and the substrate, laser intensity and gases (He, Ar, N₂, compressed air) blown in the deposition zone, has been performed. The deposition rate in the experiments was estimated as 2–5×10^-4 nm/(cm²pulse) for the pulse energy of 1–4 mJ. The deposited amorphous carbon films with thickness of several hundred nanometers have shown high average nanohardness (10–25 GPa depending on the irradiation conditions) and good adhesion to substrates (60 MPa). According to X-ray electron spectroscopy analysis the films consist of both sp²- and sp³-bonded carbon and contain 3–7% of free oxygen in bulk. The mechanisms of DLC non-vacuum laser deposition are discussed. To demonstrate the large potential of this technique, the first results on deposition of titanium nitride using ablation of titanium in air with nitrogen jet assistance are also presented. PACS 52.38.Mf; 81.15.Fg; 81.05.Uw     

Stimulated emission at the second order stop-zone edge of the two-dimensional opal–zinc oxide photonic crystal

The fabrication of the 2D periodic structures in ZnO thin films by magnetron sputtering on the opal matrices was developed. The microstructures were characterized by AFM and SEM. The spontaneous and stimulated emissions of the ZnO layers on opal were studied at N₂ laser excitation (λ = 337 nm). The stimulated emission near 397 nm was observed at room temperature from ZnO–opal structure. The threshold of the electron–hole plasma recombination laser process was 300 kW/cm² for this structure. This threshold is two orders of magnitude smaller of that one for the flat ZnO–SiO₂ films owing to DFB resonator effect in 2D structure.     

Pulsed laser deposition of PZT/Pt composite thin films with high dielectric constants

PbZr_0.53Ti_0.47O₃ (PZT) thin films containing nanoparticles of Pt (3–10 nm) were produced using pulsed laser deposition (PLD). The Pt content can be tuned by varying the energy density of the laser beam. Phase and microstructure analysis of the thin films was performed using XRD, SEM, TEM and AFM. The electrical properties were investigated by C–V and I–V measurements. The effective dielectric constant of the composite films increased substantially through the Pt dispersion. These films are promising candidates, for instance, for high-density dynamic random access memory (DRAM) devices. PACS 77.22.Ch; 77.84.Lf; 81.15.Fg     

Laser deposited YBaCuO thin films

YBa₂Cu₃O_7-x thin films were deposited by laser ablation using KrF excimer laser. In deposition on polycrystalline ZrO₂/(1–102) sapphire substrates influence of deposition conditions on film properties were studied. Zero resistance temperatureT _z of 83 K of epitaxially grown YBaCuO films on poly-ZrO₂/sapphire substrates was reached. Epitaxially grown yttria stabilized zirconia (YSZ) buffer layers were deposited by laser ablation on (1–102) sapphire substrates. On YSZ/sapphire, SrTiO₃ and NdGaO₃ substrates, temperatures T_z between 89–90 K were measured. Results of X-ray diffraction and SEM are also presented.We would like to express our thanks to L. Cibulka, L. and L. Rouek, and J. Stránský for their efficient help during the solution of technological problems connected with the construction of experimental apparatus.     

Generation of continuous-wave coherent radiation tunable down to 190.8nm in β-BaB2O4

Continuous-wave coherent radiation tunable in the wavelength range 190.8–196.1 nm has been generated by sum-frequency generation in -BaB₂O₄. The fundamental beams were supplied by a Ti:Al₂O₃ laser and a frequency-doubled argon-ion laser.     

Morphology dependence of the dielectric properties of epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO₃ films and epitaxial BaTiO₃/SrTiO₃ multilayers were grown by pulsed laser deposition on vicinal surfaces of (001)-oriented Nb-doped SrTiO₃ (SrTiO₃:Nb) single-crystal substrates. Atomic force microscopy was used to investigate the surface topography of the deposited films. The morphology of the films, of the BaTiO₃/SrTiO₃ interfaces, and of the column boundaries was investigated by cross-sectional high-resolution transmission electron microscopy. Measurements of the dielectric properties were performed by comparing BaTiO₃ films and BaTiO₃/SrTiO₃ multilayers of different numbers of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm and linearly decreases with decreasing film thickness below a thickness of 75 nm. At the same thickness of 75 nm, the thickness dependence of the dielectric constant also exhibits a change in the linear slope both for BaTiO₃ films and BaTiO₃/SrTiO₃ multilayers. This behaviour is explained by the change observed in the grain morphology at a thickness of 75 nm. For the thickness dependence of the dielectric constant, two phenomenological models are considered, viz. a series-capacitor model and a dead-layer model. PACS 77.22.-d; 77.22.Ch; 77.55.+f; 77.22.Gm; 77.84.Dy; 81.15.-z ; 81.16.Mk; 81.65.-b; 68.55.-a; 68.37.-d     

Influence of crystallisation on the photoluminescence properties of Y2-xErxTi2O7 sol-gel thin films

Optically active Er₂Ti₂O₇ (ETO) and Y_2-xEr_xTi₂O₇ (YETO) films have been successfully deposited using the aerosol-gel process. Several heat-treatment procedures are investigated in the 600–850 °C range. ETO and YETO films start to crystallise in the pyrochlore phase at about 750 °C, depending on the heat-treatment time. Crystalline YETO films form a solid solution where the erbium ions are well diluted. Up-conversion emission (UPE) in the visible wavelength range and infrared photoluminescence (PL) at 1.53 m are investigated. PL spectra are composed of several sharp peaks. Stark splitting of the ⁴I_13/2 and ⁴I_15/2 erbium levels is analysed. A clear correlation between spectroscopic properties and film microstructure is evidenced. YETO films exhibit strong PL compared to ETO films. PL lifetimes of up to 8.6 ms were measured on YETO films at an erbium concentration of 2×10²⁰ ions/cm³. The YETO compound is found to be a suitable material, improving the erbium active properties. PACS 81.20.Fw; 78.55; 78.66     

Pulsed laser deposition of fluoride glass thin films

The development of integrated waveguide lasers for different applications such as marking, illumination or medical technology has become highly desirable. Diode pumped planar waveguide lasers emitting in the green visible spectral range, e.g. thin films from praseodymium doped fluorozirconate glass matrix (called ZBLAN, owing to the main components ZrF₄, BaF₂, LaF₃, AlF₃ and NaF) as the active material pumped by a blue laser diode, have aroused great interest. In this work we have investigated the deposition of Pr:ZBLAN thin films using pulsed laser radiation of λ = 193 and λ = 248 nm. The deposition has been carried out on MgF₂ single crystal substrates in a vacuum chamber by varying both processing gas pressure and energy fluence. The existence of an absorption line at 210 nm in Pr:ZBLAN leads to absorption and radiative relaxation of the absorbed laser energy of λ = 193 nm preventing the evaporation of target material. The deposited thin films consist of solidified and molten droplets and irregular particulates only. Furthermore, X-ray radiation has been applied to fluoride glass targets to enhance the absorption in the UV spectral region and to investigate the deposition of X-ray treated targets applying laser radiation of λ = 248 nm. It has been shown that induced F-centres near the target surface are not thermally stable and can be easily ablated. Therefore, λ = 248 nm is not suitable for evaporation of Pr:ZBLAN.     

Infrared Optical Characterization of PLT Thin Films for Applications in Uncooled Infrared Detectors

Lanthanum-modified lead titanate (PLT) thin films have been grown directly on Pt/Ti/SiO₂/Si (100) and LaNiO₃/Si (100) substrates by a modified sol-gel method. X-ray diffraction analysis shows that the PLT thin films are polycrystalline. The infrared optical properties of the thin films were investigated using infrared spectroscopic ellipsometry (IRSE) in the spectral range of 2.5–12.5 m. By fitting the measured ellipsometric parameter (tan and cos) data with a three phase model (air/PLT/Pt) for the PLT thin films on Pt/Ti/SiO₂/Si (100) and a four phase model (air/PLT/LNO/Si) for the PLT thin films on LaNiO₃/Si (100) substrates, and a derived classical dispersion relation for the thin films, the optical constants and thicknesses of the thin films have been simultaneously obtained. The refractive index and extinction coefficient of the PLT thin films on Pt/Ti/SiO₂/Si (100) substrates are slightly larger than those on LaNiO₃/Si (100) substrates. Given the infrared semitransparent metal of Nickel currently used, the absorption of the Ni/PLT/Pt and Ni/PLT/LNO/Si multilayer thin films in this study is very large around 3.0 m and 5.7 m wavelength range and decrease to 15% or 20% in the 8–12.5 m wavelength region.     

Nonlinear refraction and nonlinear absorption of As2S3 aqueous solution

We report for the first time to our knowledge on the preparation of colloidal solution of chalcogenide semiconductor As₂S₃ by laser ablation and the measurements of its nonlinear-optical characteristics using Z-scan method at the wavelength of Nd:YAG laser radiation ( = 1064 nm, = 25 ns). The nonlinear refractive index was measured to be –7.5 × 10^–18 m² W^–1. Nonlinear absorption coefficient of chalcogenide solution was measured to be 1 cm GW^–1.     

Spectroscopic ellipsometry investigations of PLT ferroelectric thin films with various La concentrations in the mid-infrared spectral region

(Pb_1-xLa_x)Ti_1-x/4O₃ (PLT) ferroelectric thin films with various La concentrations have been grown on LaNiO₃/Si(100) substrates by a modified sol-gel technique. X-ray-diffraction analyses show that the PLT and LaNiO₃ thin films are polycrystalline and entirely perovskite phase. The infrared optical properties of the PLT thin films have been investigated using infrared spectroscopic ellipsometry in the wavelength range of 2.5–12.5 m. By fitting the measured ellipsometric parameter (cos and cos) data with a four-phase model (air/PLT/LaNiO₃/Si), and a derived dispersion relation for the PLT thin films, the optical constants and thicknesses of the thin films have been determined. The refractive index of the PLT thin films decreases with increasing wavelength; however, by a Kramers–Kronig analysis the extinction coefficient increases with increasing wavelength. Moreover, the refractive index and extinction coefficient of the PLT thin films increase with increasing La concentration. This indicates that the infrared optical constants of the PLT thin films are a function of the La concentration. It is believed that the increase in the infrared optical constants of the PLT thin films with increasing La concentration is mainly due to the crystallinity and the electronic band structure of the PLT thin films. PACS 77.55.+f; 78.66.-w; 78.30.Am; 81.70.Fy