The properties of GaMnN films grown by metalorganic chemical vapour deposition using Raman spectroscopy

An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LVM), respectively. After annealing, the intensity ratio between the LVM and E2 (high) mode, i.e., ILVM /IE2 (high) , increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.     

The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy

An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm^-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LVM), respectively. After annealing, the intensity ratio between the LVM and E₂(high) mode, i.e., I_LVM=I_E2(high), increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.     

Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0 0 0 1) by metal-organic chemical vapor deposition

A high-quality ferromagnetic GaMnN (Mn=2.8 at%) film was deposited onto a GaN buffer/Al₂O₃(0 0 0 1) at 885 °C using the metal-organic chemical vapor deposition (MOCVD) process. The GaMnN film shows a highly c-axis-oriented hexagonal wurtzite structure, implying that Mn doping into GaN does not influence the crystallinity of the film. No Mn-related secondary phases were found in the GaMnN film by means of a high-flux X-ray diffraction analysis. The composition profiles of Ga, Mn, and N maintain nearly constant levels in depth profiles of the GaMnN film. The binding energy peak of the Mn 2p_3/2 orbital was observed at 642.3 eV corresponding to the Mn (III) oxidation state of MnN. The presence of metallic Mn clusters (binding energy: 640.9 eV) in the GaMnN film was excluded. A broad yellow emission around 2.2 eV as well as a relatively weak near-band-edge emission at 3.39 eV was observed in a Mn-doped GaN film, while the undoped GaN film only shows a near-band-edge emission at 3.37 eV. The Mn-doped GaN film showed n-type semiconducting characteristics; the electron carrier concentration was 1.2×10²¹/cm³ and the resistivity was 3.9×10⁻³ Ω cm. Ferromagnetic hysteresis loops were observed at 300 K with a magnetic field parallel and perpendicular to the ab plane. The zero-field-cooled and field-cooled curves at temperatures ranging from 10 to 350 K strongly indicate that the GaMnN film is ferromagnetic at least up to 350 K. A coercive field of 250 Oe and effective magnetic moment of 0.0003 μ_B/Mn were obtained. The n-type semiconducting behavior plays a role in inducing ferromagnetism in the GaMnN film, and the observed ferromagnetism is appropriately explained by a double exchange mechanism.     

The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy

GaMnN and Be-codoped GaMnN were grown via molecular beam epitaxy using a single GaN precursor and their structural and magnetic properties were examined. X-ray diffraction and superconducting quantum interference device (SQUID) measurements revealed that the grown layers are homogeneous without precipitates. The saturation magnetization of GaMnN has increased from ∼4 to ∼16 emu/cm³ via codoping of Be. The d–d exchange interaction between Mn atoms was discussed for the ferromagnetism of GaMnN.     

基于XPS与XAS的稀磁半导体GaMnN电子结构研究

采用基于同步辐射技术的X射线光电子能谱(XPS)与X射线吸收谱(XAS)测试由金属有机化学气相沉积(MOCVD)技术制备的不同Mn掺杂浓度的稀磁半导体GaMnN薄膜的电子结构,探究Mn掺杂浓度对磁性原子Mn周围的局域环境和电子态等方面的影响,并阐述材料铁磁性变化的机理. XPS和XAS图谱分析表明：Mn²⁺和Mn³⁺共存于薄膜样品内,样品D中Mn²⁺占比高达70%-80%,N空位随Mn掺杂浓度增加而增多且N空位能够使空穴浓度降低,导致Mn 3d和N 2p轨道间的相互交换作用减小,从而减弱体系铁磁性.此外,Mn不同的掺杂浓度会影响GaMnN薄膜p-d耦合杂化能力的强弱,当掺Mn 1.8%时具有较强的p-d耦合杂化能力.     

Role of vacancy-type defects in magnetism of GaMnN

Role of vacancy-type(N vacancy(VN) and Ga vacancy(VGa)) defects in magnetism of GaMnN is investigated by first-principle calculation.Theoretical results show that both the VNand VGainfluence the ferromagnetic state of a system.The VNcan induce antiferromagnetic state and the VGaindirectly modify the stability of the ferromagnetic state by depopulating the Mn levels in GaMnN.The transfer of electrons between the vacancy defects and Mn ions results in converting Mn~(3+)(d~4) into Mn~(2+)(d5).The introduced VNand the ferromagnetism become stronger and then gradually weaker with Mn concentration increasing,as well as the coexistence of Mn~(3+)(d~4) and Mn~(2+)(d~5) are found in GaMnN films grown by metal–organic chemical vapor deposition.The analysis suggests that a big proportion of Mn~(3+)changing into Mn~(2+)will reduce the exchange interaction and magnetic correlation of Mn atoms and lead to the reduction of ferromagnetism of material.     

金属有机化学气相淀积技术制备GaMnN薄膜材料光学性质研究

研究由MOCVD 技术制备的 GaMnN 外延薄膜光吸收谱.实验发现Mn掺杂后较未掺杂GaN吸收系数在近紫外区增加,在吸收谱低能区144 eV附近观察到吸收峰,吸收系数随Mn浓度的增加而增大.实验结果与基于密度泛函理论的第一性原理计算结果一致,结合理论计算分析认为144 eV附近的吸收峰源于Mn³⁺离子e态与t₂态间的带内跃迁⁵T₂→⁵E. 关键词： GaMnN MOCVD 密度泛函理论 光学性质     

基于电子回旋共振-等离子体增强金属有机物化学气相沉积技术生长GaMnN稀磁半导体的研究

利用电子回旋共振-等离子体增强金属有机物化学气相沉积 (ECR-PEMOCVD)方法,采用二茂锰(Cp₂Mn)作为Mn源,高纯氮气作为氮源,三乙基镓(TEGa)作为Ga源,在蓝宝石(α-Al₂O₃)(0001)衬底上外延生长GaMnN稀磁半导体薄膜.反射高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)表征了GaMnN薄膜的晶体结构和表面形貌.GaMnN薄膜均表现出良好的(0002)择优取向,表明制备的薄膜倾向于 关键词： GaMnN薄膜 稀磁半导体 铁磁性 居里温度     

Phenomenological band structure model of magnetic coupling in semiconductors

A unified band structure model is proposed to explain the magnetic ordering in Mn-doped semiconductors. This model is based on the p-d and d-d level repulsions between the Mn ions and host elements and can successfully explain magnetic ordering observed in all Mn doped II-VI and III-V semiconductors such as CdTe, GaAs, ZnO, and GaN. The model can also be used to explain the interesting behavior of GaMnN, which changes from ferromagnetic ordering to antiferromagnetic ordering as the Mn concentration increases. This model, therefore, is useful to provide a simple guideline for future band structure engineering of magnetic semiconductors.     

GaMnN材料红外光谱中洛伦兹振子模型的遗传算法研究

利用红外反射光谱研究了蓝宝石衬底上用金属有机物化学气相淀积方法生长的稀磁半导体GaMnN材料的晶格振动特性. 并成功地将改进的遗传算法应用于其红外反射光谱洛伦兹振子模型参数的提取. 通过与GaN薄膜的洛伦兹振子模型参数的对比研究发现,GaN掺入Mn后,ω_TO向高频方向移动,γ,ε_∞和ε_s均增加,而ω_LO基本保持不变. 文中同时分析和讨论了Mn对晶格振动特性的影响及 关键词： 稀磁半导体GaMnN材料 遗传算法 洛伦兹振子模型 参数提取     

Plasma-assisted molecular beam epitaxy of wurtzite GaMnN displaying ferromagnetism assessed by means of X-ray magnetic circular dichroism

We report on the optimization of the growth conditions of wurtzite GaMnN grown by plasma-assisted molecular beam epitaxy in order to obtain intrinsic ferromagnetic behavior. By growing with a Ga/N ratio lower than unity and by introduction of periodic growth interruptions, we succeed in synthesizing single-phase GaMnN epilayers containing up to 6.3 at.% of Mn. The structural quality of the GaMnN epilayer and the absence of secondary phases are demonstrated by means of X-ray diffraction experiments and X-ray linear dichroism measurements performed at the Mn and Ga K-edges. The intrinsic ferromagnetism for 6.3 at.% of Mn in our GaMnN epilayer is demonstrated by means of magnetization measurements in a 5 T Quantum Design superconducting quantum interference device (SQUID) and X-ray magnetic circular dichroism investigations performed at the K-edge of Mn. The Curie temperature thus determined is equal to 8 K and a spontaneous magnetic moment of 2.4μ_B per Mn atom is found at 2 K.     

Effect of annealing time on the structural and ferromagnetic properties of the GaMnN thin films

GaMnN thin films were deposited on a sapphire (0001) substrate by using laser assisted molecular beam epitaxy. Subsequently, the samples were annealed in the ammonia ambience at 1000 °C for different time lengths. The crystalline quality was improved gradually, and the room temperature ferromagnetism of our samples becomes stronger with the increase of the annealing time within 25 min. The X-ray photoelectron spectra analysis confirmed that the Mn³⁺ concentration in the GaMnN films increased after annealing. The stronger ferromagnetism was observed in the sample with the higher Mn³⁺ concentration. However, too long annealing time, such as 35 min, will lead to the degradation of the crystalline quality and the decrease of Mn³⁺ concentration, which results in the weakened ferromagnetism. The optimal annealing time is 25 min at 1000 °C in our experiments. Finally, the origin of the room temperature ferromagnetism in our samples was discussed preliminarily.     

Magnetic properties of p-doped GaMnN diluted magnetic semiconductors containing clusters

Magnetic properties of p-doped GaMnN diluted magnetic semiconductors, having both randomly distributed Mn ions and Mn_xN_y clusters, are presented under the theory based on the hole-mediated ferromagnetism. The critical temperature of the second order phase transition between ferromagnetic and paramagnetic phases and the magnetization as a function of temperature are obtained from the free energy calculation. The Curie temperature of the p-doped GaMnN containing clusters depends not on the type of clusters but on the composition rate of clusters. The behavior of the spontaneous magnetization as a function of temperature is strongly affected by carrier concentration. The p-doped GaMnN diluted magnetic semiconductors containing clusters have room temperature ferromagnetism regardless of the magnetic type of clusters, as long as hole-mediated spin-spin interactions occur in them.     

Reconstruction control of magnetic properties during epitaxial growth of ferromagnetic Mn3-deltaGa on Wurtzite GaN(0001)

Binary ferromagnetic Mn(3-delta)Ga (1.2<3-delta< or =1.5) crystalline thin films have been epitaxially grown on wurtzite GaN(0001) surfaces using rf N-plasma molecular beam epitaxy. The film structure is face-centered tetragonal with CuAu type-I (L1(0)) ordering with (111) orientation. The in-plane epitaxial relationship to GaN is nearly ideal with [110](MnGa) parallel[1100](GaN) and [112](MnGa) parallel[1120](GaN). We observe magnetic anisotropy along both the in-plane and out-of-plane directions. The magnetic moments are found to depend on the Mn/(Mn+Ga) flux ratio and can be controlled by observation of the surface reconstruction during growth, which varies from 1x1 to 2x2 with increasing Mn stoichiometry.     

氮原子、分子与团簇离子注入Si(111)的特性研究

用椭偏仪、傅氏变换红外吸收谱(FTIR)、X射线光电子能谱(XPS)以及原子力显微镜(AFM)对N⁺₁,N⁺₂,N⁺₁₀离子高剂量(1.7×10¹⁷ions/cm²)注入Si(111)的表面进行测试分析,发现三种不同尺度的离子注入后,均使Si由复折射率变化为实折射率,表面出现含氮硅键的介质层.但其表面形貌各异:N^{+关键词： 氮团簇注入 表面特性}     

热退火对Mn离子注入非故意掺杂GaN微结构、光学及磁学特性的影响

通过Mn离子注入非故意掺杂GaN外延层制备了GaN:Mn薄膜,并研究了退火温度对GaN:Mn薄膜的微结构、光学及磁学特性的影响.对不同退火温度处理后的GaN:Mn薄膜的拉曼谱测试显示,出现了由与离子注入相关的缺陷的局域振动(LV)和(Ga,Mn)N中Mn离子的LV引起的新的声子模.在GaN:Mn薄膜的光致发光谱中观察到位于2.16,2.53和2.92 eV处的三个新发光峰(带),其中位于2.16 eV处的新发光带不能排除来自Mn相关辐射复合的贡献.对GaN:Mn薄膜的霍尔测试显示,退火处理后样品表现出n型体材料特征.对GaN:Mn薄膜的振动样品磁强计测试显示,GaN:Mn薄膜具有室温铁磁性,其强弱受Mn相关杂质带中参与调节磁相互作用的空穴浓度的影响.     

图形化Silicon-on-Insulator衬底上分子束外延生长可动GaN微光栅的研究

GaN材料作为第三代半导体材料,具有宽禁带、直接带隙、耐腐蚀等优点,是一种非常有前景的MOEMS材料。由于GaN的刻蚀目前尚未成熟,因此图形化外延生长法是一种较好的选择。本文基于SOI(silicon-on-insulator)基片,利用硅的微加工技术和图形化GaN分子束外延生长工艺,设计并加工了工作在太赫兹波段的、可以在二维方向上运动的SOI基GaN光栅。光栅周期为16μm,光栅宽度为6μm,峰值位置为25.901μm。通过仿真优化,设计的微驱动器在水平电压220V时,水平方向上的位移为±7.26μm;垂直方向加200V电压时,垂直位移2.5μm。为了研究在图形化SOI衬底上外延生长的InGaN/GaN量子阱薄膜的光学性能,用激光拉曼光谱仪对薄膜进行了光致发光光谱实验。实验结果表明,InGaN/GaN量子阱薄膜具有良好的发光性能,其发光范围为350~500nm,覆盖了紫外光到黄绿光。由于局域态效应与禁带收缩的作用,随着环境温度由10K升高至室温,薄膜的PL光谱的峰位呈现"S"形变化趋势。     

基于GaN同质衬底的高迁移率AlGaN/GaNHEMT材料

研究了表面预处理对GaN同质外延的影响,获得了高电子迁移率AlGaN/GaN异质结材料.通过NH_3/H_2混合气体与H_2交替通入反应室的方法对GaN模板和GaN半绝缘衬底进行高温预处理.研究结果表明,NH_3/H_2能够抑制GaN的分解,避免粗糙表面,但不利于去除表面的杂质,黄光带峰相对强度较高;H_2促进GaN分解,随时间延长GaN分解加剧,导致模板表面粗糙不平,AlGaN/GaN HEMT材料二维电子气迁移率降低.采用NH_3/H_2混合气体与H_2交替气氛模式处理模板或衬底表面,能够清洁表面,去除表面杂质,获得平滑的生长表面和外延材料表面,有利于提高AlGaN/GaN HEMT材料电学性能.在GaN衬底上外延AlGaN/GaN HEMT材料,2DEG迁移率达到2113 cm~2/V·s,电学性能良好.     

Pre-edge features in X-ray absorption structure of Mn in GaMnN,GaMnAs and GeMn

_Ga1-xMnxN${\mathrm{Ga}}_{1-x}{\mathrm{Mn}}_x\mathrm{N}$ samples with a wide range of concentrations, from x=0.003$x=0.003$ to 0.057, were grown by molecular beam epitaxy. X-ray diffraction and the simulation of the extended X-ray absorption fine structure (EXAFS) confirmed the wurtzite structure of the samples, without any secondary phase, and the location of Mn in the gallium sublattice of GaN. The valence state of Mn was studied using the X-ray absorption near-edge structure (XANES) at the K-edge of Mn. The shape of the measured XANES spectra does not depend on the Mn concentration: that implies the same valence state and local atomic structure around the Mn atom in all samples. A calculation of the electronic band structure of GaMnN, GaMnAs, GeMn and the XANES spectra of Mn in GaMnN was performed using the linearized augmented plane wave (LAPW) method. The calculated spectra fit well our experimental data. In particular, the comparison demonstrates that a peak in the pre-edge structure is directly related to the 3+$3+$ valence state of Mn. This was confirmed experimentally by measurements of the Mn K-edge in GaMn²⁺As${\mathrm{GaMn}}^{2+}\mathrm{As}$ and ZnMn²⁺Te${\mathrm{ZnMn}}^{2+}\mathrm{Te}$. An application of proposed interpretation for GeMn is discussed.     

GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响

通过理论计算研究GaMnN铁磁共振隧穿二极管自旋电流输运特性.理论结果表明在电流特性曲线上出现两个明显的自旋分裂峰.该电流自旋分裂峰和相应的自旋极化随温度的升高而逐渐减小消失.当进一步考虑到GaN异质结界面极化电荷影响时,自旋向下的电流共振峰得到明显增强,同时电流的自旋极化也得到相应的提高.在一定的极化电荷条件下,可以获得较高的自旋极化电流. 关键词： GaMnN 共振隧穿 自旋电流 极化电荷