掺杂比对Hg1－xCdxGa2S4晶体频率转换的影响

在相位匹配和可接受掺杂比理论的基础上,针对Cd掺杂的不同相Hg1－xCdxGa2S4晶体,研究了掺杂比对频率转换的影响.依据相应的Sellmeier方程得到了倍频和Nd3+∶YAG与Ho3+∶YLF激光器泵浦光学参量振荡的相位匹配调谐曲线,并给出了不同掺杂下的可接受掺杂比.结果表明:掺杂晶体可实现1~5 μm范围内非临界相位匹配的倍频和1~13 μm的参量光产生;随着掺杂比的增大,可接受掺杂比近似线性减小,并随着波长改变展现出不同变化趋势.     

BaZr(BO3)2:Eu的合成及发光性能研究

用硝酸盐热分解法成功制备了BaZr(BO₃)₂:Eu(Eu³⁺的掺杂量为摩尔分数5％)荧光材料，并研究了其在254及147nm光束激发下的发光特性.254nm光束激发下的发射主峰位于612nm处，归属于Eu³⁺的⁵D₀—⁷F₂的电偶极跃迁，但在147nm光束激发下的发射主峰位于592nm处，归属于Eu³⁺的相似文献   

Cs2 23△1g态碰撞线归属和超精细结构解释

根据最新的Cs₂分子中间态A¹∑⁺_u -b³Πu全局解微扰获得的能级数据, 归属了通过微扰增强红外-红外光学双共振中间态A¹∑⁺_u 到上态2³△_1g的140条碰撞线, 包含之前实验观测到的221条2³△_1g←A¹∑⁺_u← X¹∑⁺_g 双共振跃迁[J. Chem. Phys. 128, 204313 (2008)], 重新计算了2³△_1g态的分子常数和势能曲线(排除54个微扰能级). 本次拟合得到的离心畸变常数和从经验公式计算得到的值相符合. 在亚多普勒激发光谱中,没有分辨出2³△_1g态的超精细结构. 对2³△_1g态的超精细结构进行初步计算,比较实验结果给出解释和说明.     

Al2O3:V3+晶体局域结构及其自旋哈密顿参量研究

提出了解释掺杂离子局域结构畸变的配体平面移动模型，建立了此模型下晶体微观结构与自旋哈密顿参量之间的定量关系.在考虑自旋与自旋、自旋与另一电子轨道和轨道与轨道作用等微小磁相互作用的基础上，采用全组态完全对角化方法，对Al₂O₃晶体中V³⁺的局域结构和自旋哈密顿参量进行了系统的研究.结果表明，V³⁺掺入Al₂O₃晶体后，上下配体氧平面间距离增大了0.0060 nm.从而成功地解释了Al₂O₃:V³⁺晶体的自旋哈密顿参量.在此基础上，研究了三角晶场下3d²离子自旋哈密顿参量的微观起源.研究发现，自旋三重态对自旋哈密顿参量的贡献是主要的，微小磁相互作用对自旋哈密顿参量的贡献只与自旋三重态有关.     

Ag-Cu纳米颗粒修饰的N掺杂TiO2纳米棒阵列及其高效光催化CO2还原应用

本文采用微纳加工方法制备了负载高密度Ag-Cu纳米颗粒的N掺杂TiO₂纳米棒阵列样品. 通过TiO₂的N掺杂,可将其吸光范围调控至与Ag纳米颗粒的等离激元吸收频率相匹配的波段,从而实现复合材料中肖特基结与共振能量转移过程的协同作用. 与此同时,Cu纳米颗粒可以为CO₂还原提供活性位点. 在全谱光照射下,复合样品光催化CO₂还原的活性显著提高,CH₄生成速率可达720 μmol·g^-1·h^-1.     

Nd掺杂对Bi4Ti3O12铁电薄膜的微结构和铁电性能的影响

利用溶胶-凝胶法在Pt/Ti/SiO₂/Si(100)衬底上制备了Nd掺杂Bi₄Ti₃O₁₂(Bi_4-xNd_xTi₃O₁₂, x=0.00,0.30,0.45,0.75,0.85,1.00,1.50)铁电薄膜样品.研究了Nd掺杂对Bi₄Ti₃O₁₂薄膜的微结构和铁电性能的影响.研究结果表明:Nd掺杂未改变Bi₄Ti₃O₁₂薄膜的基本晶体结构.在掺杂量x<0.45时,Nd³⁺只取代类钙钛矿层中的A位Bi³⁺.当x=0.45时,样品剩余极化强度达最大值,在270kV·cm^-1的电场下为32.7μC·cm^-2.掺杂量进一步增加时,结构无序度开始明显增大,Nd³⁺开始进入(Bi₂O₂)²⁺层,削弱其绝缘层和空间电荷库的作用,导致材料剩余极化逐渐下降.当掺杂量x达到1.50时,掺杂离子最终破坏(Bi₂O₂)²⁺层的结构,材料发生铁电-顺电相变.     

Sr2CeO4电荷迁移发光的光谱结构规律研究

利用高温固相反应法分别合成了不同物相形成机理的Sr₂CeO₄，Sr ₂CeO₄∶Ca ²⁺和Sr₂CeO₄∶Ba²⁺样品，并对其光谱特性进行 了研究.结果发现，对于由SrO和CeO₂直接反应生成的Sr₂CeO₄(Ⅰ)，激发主峰位于256nm 左右；而对于SrCeO₃和SrO反应生成的Sr₂CeO₄(Ⅱ)，激发主峰位于279nm左右.在Sr₂CeO₄(Ⅰ)中掺入Ca²⁺，其激发光谱随着Ca²⁺离子浓度的增加逐渐接近于Sr₂CeO_{4(Ⅱ)的激发光谱.激发主峰带应属于CeO6八面体终端Ce⁴⁺—O^2-键的电荷迁移 带.对于激发光谱中340nm左右的弱激发峰，其峰值波长不受形成机理及Ca²⁺掺杂的影响，只是其强度 随着 激发主峰的红移而增加，它可能属于CeO6八面体平面上Ce⁴⁺—O2-键的电荷 迁移带.形成机理及Ca²⁺掺杂对发射光谱没有影响.Ca²⁺在Sr 2CeO 4(Ⅱ)与Ba²⁺在Sr2CeO4(Ⅰ)和(Ⅱ)中均难 于替代Sr²⁺的位置.}     

掺杂浓度和烧结温度对CaWO4:Eu3+发光性能的影响

采用微乳液法合成掺杂浓度不同和烧结温度不同的CaWO₄:Eu³⁺系列荧光体, 这些荧光体都具有Eu³⁺离子的特征荧光发射. 在不同温度烧结后, 高浓度掺杂的样品(Eu³⁺掺杂30或50 mol%)可获得最大的发光强度, 低浓度掺杂的样品(掺杂0.5—2 mol%)在800 ℃烧结时也可获得优异的发光强度. 实验结果表明, Eu³⁺离子高浓度掺杂的CaWO₄:Eu³⁺在紫外光激发下可成为高效发光的荧光粉.     

在BEPCⅡ/BESⅢ上寻找η′c和1P1的Monte Carlo研究

使用SimBes(探测器模拟软件)和UGNT(物理事例产生器)模拟了在即将建造的BEPCⅡBESⅢ上寻找η′_c和¹P₁的过程.初步结论是如果收集到3×10⁹ψ(2S)事例,就有能力寻找这两个粒子,而且,寻找η′_c比寻找¹P₁需要更少的ψ(2S)事例.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

载波-包络相位稳定的周期量级近红外超短脉冲激光系统

利用光参量放大过程输出的闲置光载波-包络相位(CEP)被动稳定的特点,搭建了三级光参量放大(OPA)系统,获得了CEP稳定的近红外高能量超短激光脉冲(1.4 mJ/40 fs/1 kHz @ 1.8 μm),其CEP抖动为516 mrad(rms).经空心光纤展宽光谱和块体材料补偿色散,激光脉宽最终可被压缩至小于两个光学周期(<12 fs),脉冲能量达到0.54 mJ.该系统为单个阿秒脉冲的产生和其他高次谐波实验提供了优质的光源. 关键词： 光参量放大 周期量级近红外激光脉冲 载波-包络相位稳定     

Generation of Broadband Near-Infrared (2–2.5 μm) Radiation from an Optical Parametric Amplifier Driven by a Cr:Forsterite Laser Near Dispersion Anomalies of Tuning Curves

Pulses with a spectral width of 450 nm at a wavelength of 2.2 μm are generated in a parametric amplifier based on a type-I BBO crystal pumped by the second harmonic (620 nm) of a Cr:forsterite laser. Such a broadband radiation is obtained in a specific regime of the group velocity matching near the vertical region of the tuning curve. The generated pulses can be compressed to a duration of about 2.5 optical cycles (34 fs) in a medium with positive group-velocity dispersion.     

Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators

Long-wave infrared(IR) generation based on type-II(o→e+o) phase matching ZnGeP 2(ZGP) and CdSe optical parametric oscillators(OPOs) pumped by a 2.05 μm Tm,Ho:GdVO 4 laser is reported.The comparisons of the birefringent walk-off effect and the oscillation threshold between ZGP and CdSe OPOs are performed theoretically and experimentally.For the ZGP OPO,up to 419 mW output at 8.04 μm is obtained at the 8 kHz pump pulse repetition frequency(PRF) with a slope efficiency of 7.6%.This ZGP OPO can be continuously tuned from 7.8 to 8.5 μm.For the CdSe OPO,we demonstrate a 64 mW output at 8.9 μm with a single crystal 28 mm in length.     

Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators

Long-wave infrared (IR) generation based on type-II (o→e+o) phase matching ZnGeP₂ (ZGP) and CdSe optical parametric oscillators (OPOs) pumped by a 2.05 μm Tm,Ho:GdVO₄ laser is reported. The comparisons of the birefringent walk-off effect and the oscillation threshold between ZGP and CdSe OPOs are performed theoretically and experimentally. For the ZGP OPO, up to 419 mW output at 8.04 μm is obtained at the 8 kHz pump pulse repetition frequency (PRF) with a slope efficiency of 7.6%. This ZGP OPO can be continuously tuned from 7.8 to 8.5 μm. For the CdSe OPO, we demonstrate a 64 mW output at 8.9 μm with a single crystal 28 mm in length.     

Optical parametric generation in CdSiP2

We report efficient generation of picosecond pulses in the near- and mid-IR in the new nonlinear material CdSiP(2) pumped at 1.064 μm by an amplified mode-locked Nd:YVO(4) laser at a 100 kHz repetition rate. By using single-pass optical parametric generation in 8-mm-long crystal cut for type I(e→oo) noncritical phase matching, an average idler power of 154 mW at 6.204 μm together with 1.16 W of signal at 1.282 μm has been obtained for 6.1 W of pump at photon conversion efficiencies of 15% and 23%, respectively. Signal pulse durations of 6.36 ps are measured for 9 ps pump pulses.     

参变过程中的群速延迟对晶体匹配长度的影响

基于能量守恒和三波耦合波方程,建立了超短脉冲在参变过程中二次谐波产生时的I类和II类相位匹配条件、基波与谐波之间的群速延迟时间、以及群速失配对晶体长度限制的理论基础。以负单轴非线性光学晶体CsLiB6O10为例,分析和数值计算了超短脉冲宽度为100fs时,谐波的群速匹配长度随基波波长变化的规律。研究结果表明在I类相位匹配条件下,基波波长为642nm时,群速延迟最小,相应的群速匹配晶体长度最长为19.1mm;在II类相位匹配条件下,基波波长为767nm,群速延迟最小,群速匹配长度最长为0.89mm。     

KNbO_3高效倍频产生427～470nm蓝紫光

厚1.5 mm的KNbO_ 3晶体在室温下角度相位匹配倍频脉冲参量激光获得427～470nm蓝紫光,能量转换效率超过40％,输出单脉冲蓝紫光的峰功率达60kW.对相位匹配曲线、倍频效率与基波光强的关系和相应匹配角允差作了计算和讨论.     

Optical second harmonic generation in ammonium tartrate

Second harmonic generation was observed in ammonium tartrate single crystals by a phase matching technique at the fundamental wavelength 1.153 μm. The nonlinear coefficients were found to be comparable in magnitude to those of KDP. The optical transmission and the refractive indices were also measured.     

Optical properties and phase-matching in LiInS2

Investigation results on linear and non-linear optical properties, damage threshold and potential efficiencies of biaxial negative LiInS2 crystal are represented. It shows that the crystal has phase-matching and group-velocity matching in wide spectral range for second harmonic, sum- and difference-frequency generation of visible, near and middle IR lasers. The possibilities of designing middle IR optical parametric oscillator (OPO) pumped by Nd:YAG and dye lasers and specially possibility of frequency conversion with 3 um range femtosecond erbium lasers are given.