Fe-C合金膜光纤腐蚀传感器传感规律研究

利用PVD溅射镀以及PVD与电镀复合两种方法在光纤纤芯上制备了不同厚度的Fe-C合金膜,对其进行X-射线衍射分析,所制膜层晶体结构类型与普通碳钢基本一致.通过将镀膜光纤放入不同浓度的HNO3溶液中以及埋入混凝土结构中,进行了腐蚀实验.结果表明:在低浓度的腐蚀溶液中,不同厚度的Fe-C合金膜会从外到内被均匀地腐蚀掉,输出光功率会在腐蚀末期有一个急剧的增大现象;在高浓度的腐蚀溶液中,Fe-C合金膜会在各个局部产生裂纹,膜层被一块一块地腐蚀掉;输出光功率整体趋势增大,但并没有特别急剧的增大现象;混凝土试块中的腐蚀实验中,输出光功率的变化复杂多变,但整体趋势还是一个增大的过程.     

锗红外光学窗口海洋潮差区腐蚀特性研究

对未镀膜及表面镀类金刚石（DLC）膜锗（Ge）红外光学窗口在中国南海海域进行了海洋潮差区腐蚀试验研究,观察测试海洋腐蚀试验前后Ge窗口及膜层的表面形貌和腐蚀速率,报道了腐蚀结果,分析了Ge窗口在海洋潮差区腐蚀特性,探讨了Ge窗口在海洋腐蚀破坏机理,得出了延长Ge窗口在海洋环境下使用寿命的研究方向。研究结果对于了解Ge窗...     

镁合金阳极氧化膜腐蚀特性的红外显微成像分析

采用显微红外成像技术对镁合金阳极氧化膜表面的腐蚀特性进行了研究。镁合金在7.3 Wt% Na₂SO₄溶液中浸泡后,表面氧化层中的部分MgO逐渐转化为Mg(OH)₂,进而发生溶解和脱落,使得镁合金失去保护作用。当浸泡时间达到2 h时,显微红外成像结果表明阳极氧化膜中Mg(OH)₂的红外吸收信号最强,Mg(OH)₂的含量最多。而4 h后Mg(OH)₂的红外吸收信号开始减弱,Mg(OH)₂开始减少,镁合金不断被腐蚀。氧化膜中另一成分Al₂O₃随浸泡时间的显微红外成像信息与Mg(OH)₂的变化规律相同。采用电化学阻抗谱技术对阳极氧化膜的阻抗进行测试,其阻抗随时间的变化特点基本符合氧化膜腐蚀规律。本研究对于镁合金阳极氧化膜的表征具有很好的指导作用和推广应用价值。     

电子俘获型红外上转换屏

利用溶液悬浮分层提取技术获得粒度较为一致的电子俘获材料（ＥＴＭ）粉末，考虑ＥＴＭ屏空间分辨率、红外→可见发光亮度、ＥＴＭ化学稳定性和膜层均匀性等主要因素，采用不同方法制作了ＥＴＭ屏，较好地解决了ＥＴＭ膜层均匀性及器件封装后的化学稳定性等问题，并通过测试比较，提出了一种兼顾空间分辨率和红外上转换发光亮度的微镶嵌屏制作技术方案．     

CdTe薄膜太阳电池背接触的研究

用近空间升华法制备了CdTe多晶薄膜，用硝酸-磷酸(NP)混合液对薄膜表面进行了腐蚀.经SEM观测，腐蚀后的CdTe薄膜晶界变宽，XRD测试发现，经NP腐蚀后，在CdTe薄膜表面生成了一层高电导的富Te层.在腐蚀后的CdTe薄膜上分别制备了Cu，Cu/ZnTe：Cu，ZnTe：Cu，ZnTe/ZnTe：Cu四种背接触层，比较了它们对太阳电池性能的影响.结果表明，用ZnTe/ZnTe：Cu复合层作为背接触层的效果较好，获得了面积为0.5cm²，转换效率为13.38%的CdTe多晶薄膜太 关键词： 硝磷酸腐蚀 背接触层 CdTe太阳电池     

C波段高温超导滤波器实用化研究

主要对高温超导滤波器在国内、外应用现状进行分析。在高温超导滤波器的制备上,对现流行的两种衬底MgO基片和LaA lO3基片制备的超导膜所制作的C波段高温超导滤波器的性能进行分析比较。经多次实验测试,实际曲线结果表明:MgO基片制备的超导膜所制作的C波段高温超导滤波器,比LaA lO3基片制备的超导膜所制作的C波段高温超导滤波器在性能和制备上具有优势,便于生产。对滤波器所用制冷器的制冷量进行了计算,计算结果表明可用小型制冷机。     

高功率垂直腔面发射激光器的湿法腐蚀工艺

为提高高功率垂直腔面发射激光器(VCSEL)光电性能,对氧化限制型高功率VCSEL湿法腐蚀工艺进行了实验研究。实验中采用H₃PO₄系溶液替代以往制备此类器件常用的H₂SO₄系溶液作为高功率VCSEL外延片的腐蚀液,利用扫描电镜(SEM)研究了腐蚀后外延片氧化窗口的腐蚀形貌变化与腐蚀液浓度的关系,消除了以往采用H₂SO₄系溶液腐蚀时,高功率VCSEL氧化层侧壁出现的"燕尾"结构;通过改变湿法腐蚀工艺的外部温度条件和腐蚀液的浓度配比,实验研究了高功率VCSEL湿法腐蚀速率规律,最后得出了制备高功率VCSEL时湿法腐蚀工艺的最佳外部温度条件与腐蚀液的最佳浓度配比。     

硅（100）晶面上硅和二氧化硅的横向与纵向腐蚀速率

定义了硅表面上硅和二氧化硅的横向腐蚀速率 ,系统地测量了硅 (10 0 )晶面上的硅和二氧化硅在 4 0 %(质量分数 )氟化铵水溶液中的横向与纵向腐蚀速率 ,并和硅 (111)晶面上的测量结果进行了对比 .对比结果表明 ,尽管两种晶面上的硅和二氧化硅的腐蚀速率有明显的差别 ,其相应的表观活化能在误差范围内相同 .实验中还发现 ,溶液的温度为 38.2℃时 ,硅腐蚀过程中形成的气泡对硅的腐蚀速率有显著的影响 :开始时加速硅的腐蚀 ;但随着气泡在硅 /溶液界面的聚集 ,阻碍硅的腐蚀 .     

MgO/Pt界面对增强Co/Ni多层膜垂直磁各向异性及热稳定性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层和MgO/Pt双底层的Co/Ni多层膜样品, 通过反常霍尔效应研究了不同MgO厚度和退火温度对样品垂直磁各向异性(perpendicular magnetic anisotropy, PMA)的影响. 随着底层中MgO厚度的逐渐增加, 样品的矫顽力也随之增强, 霍尔电阻变化不大; 对样品进行退火处理后发现, 单纯Pt底层的Co/Ni多层膜随着退火温度的升高, 霍尔电阻逐渐降低, 矫顽力则迅速降低, 热稳定性较差; 而当MgO/Pt双底层的样品在200 ℃退火后矫顽力大幅增加, 霍尔电阻略微有所减小, 更高的退火温度使得Co和Ni合金化, 导致多层膜的PMA特征减弱.     

响应面方法的硅刻蚀工艺优化分析（英）

利用响应面分析方法优化了用于压力传感器硅敏感芯体的刻蚀操作条件。主要考虑了温度、KOH浓度和腐蚀时间三个操作参数，将它们的范围分别设定为40~60 ℃，0.4~0.48 mol/L 和 5~12.5 h，并设定各向异性腐蚀速率为响应值。通过建立二次方模型，分析这些参数的单独影响以及多个操作条件之间对腐蚀速率的相互交叠作用。分析结果表明:模型可以精确预测99%的响应值，相比于腐蚀时间，溶液浓度和工作温度对刻蚀速率的影响更为明显。     

Layer-by-layer growth of MgO thin films controlled by inserting a TiN seed layer using an in-situ pulsed laser deposition

Completely (200)-oriented MgO films were grown on Si(100) with insertion of a TiN seed layer by pulsed laser deposition (PLD). Compared with the conventional direct ablation of a metal Mg or ceramic MgO target, we successfully demonstrated an effective way to improve the crystallinity of MgO thin films. By using TiN as a seed layer, high-quality MgO films with an atomic-scale smooth surface of about 0.55 nm (Ra) were obtained. Moreover, it is found that the quality of MgO films was independent of the thickness of the TiN seed layer. The improved crystalline quality of the MgO films was attributed to the layer-by-layer growth mode during the deposition of MgO films, which was monitored in-situ by reflection high energy electron diffraction (RHEED). PACS 68.55.Jk; 81.15.Fg     

Effect of ZnO sacrificial layer thickness on the structure and optical properties of GaN nanoparticles prepared by RF magnetron sputtering

GaN nanoparticles were prepared on sapphire (0001) substrates with ZnO sacrificial layers by self assembly of Ga₂O₃ films in their reaction with NH₃. ZnO sacrificial layers with different thicknesses and Ga₂O₃ films were deposited on sapphire substrates in turn by a radio frequency (RF) magnetron sputtering system. Nitridation of the Ga₂O₃ films was then carried out in a quartz tube furnace. The effect of ZnO sacrificial layer thickness on the structure and optical properties of nanoparticles prepared by RF magnetron sputtering were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and photoluminescence (PL). GaN nanoparticles with ZnO sacrificial layers of different thicknesses possess hexagonal wurtzite crystal structure and have a preferred orientation with c axis perpendicular to the sapphire substrates. XRD, SEM, and AFM results reveal that the better-crystallinity, uniform, and well-dispersed GaN nanoparticles (～30 nm) without agglomeration were obtained with a ZnO sacrificial layer 300-nm thick. The PL result reveals that the optical properties of the GaN nanoparticles are improved with a ZnO sacrificial layer 300-nm thick. Therefore, we suggest that a ZnO sacrificial layer 300-nm thick is the most suitable condition for obtaining better-quality GaN nanoparticles with good luminescence performance. Moreover, the mechanism of the formation of GaN nanoparticles with ZnO sacrificial layers is also discussed.     

择优取向MgO在Si衬底上的直流溅射制备及其性能表征

采用直流磁控溅射并通过优化工艺参数,在（100）Si衬底上成功制备了高度（100）择优的MgO薄膜和MgO/TiN双层膜结构.对 （100）MgO择优取向温度影响机理做了详细讨论,并利用XRD,AFM,FESEM等手段研究了在（100）Si和（100）TiN/Si两种衬底上,不同工艺条件下MgO薄膜的表面和断面微观结构,表征了MgO薄膜的柱状生长结构和与TiN薄膜的良好外延关系.在对薄膜光学特性的研究中,利用Sellmeier模型获得了Si上MgO薄膜在可见光波段的折射率参数（550 nm处折射率为1.6 关键词： MgO薄膜 择优取向 直流溅射 折射率拟合     

Growth of completely (110)-oriented Pt film on Si (100) by using MgO as a buffer by pulsed laser deposition

(110)-textured MgO films were grown on Si (100) with etching and without etching by pulsed laser deposition. The deposited MgO films were shown to be droplets-free. The MgO film was used as a buffer layer to further grow Pt film on Si (100). A completely (110)-oriented Pt film was obtained on such a buffer layer and its surface is very smooth with a roughness of about 7.5 nm over 5×5 μm. This can be used as a new oriented Pt electrode on silicon for devices. Received: 23 January 2001 / Accepted: 27 April 2001 / Published online: 27 June 2001     

车间空气中锰及其化合物的测定

采用磷酸－高碘酸钾比色法，通过大气采样器，定量抽取工作车间的空气空气中的各种飘浮物与被微孔滤膜阻留。用磷酸溶样，在酸性溶液中，锰及其化合物被高碘酸钾氧化而生成紫红色高碘酸盐，再用分光光度计比色测定。     

Thermal and irradiation induced interdiffusion in magnetite thin films grown on magnesium oxide (0 0 1) substrates

Epitaxial Fe₃O₄(0 0 1) thin films (with a thickness in the range of 10-20 nm) grown on MgO substrates were characterized using low-energy electron diffraction (LEED), conversion electron Mössbauer spectroscopy (CEMS) and investigated using Rutherford backscattering spectrometry (RBS), channeling (RBS-C) experiments and X-ray reflectometry (XRR). The Mg out-diffusion from the MgO substrate into the film was observed for the directly-deposited Fe₃O₄/MgO(0 0 1) films. For the Fe₃O₄/Fe/MgO(0 0 1) films, the Mg diffusion was prevented by the Fe layer and the surface layer is always a pure Fe₃O₄ layer. Annealing and ion beam mixing induced a very large interface zone having a spinel and/or wustite formula in the Fe₃O₄-on-Fe film system.     

Shadowgraphy investigation of laser-induced forward transfer: Front side and back side ablation of the triazene polymer sacrificial layer

Thin films of a photodecomposible triazene polymer are used as sacrificial layer for the micro-deposition of sensitive materials by laser-induced forward transfer. To understand the ablation process of this sacrificial layer, the ultraviolet laser ablation of triazene films was investigated by time-resolved shadowgraphy. Irradiation from the film side shows a complete decomposition into gaseous fragments, while ablation through the substrate causes ejection of a solid flyer of polymer. The occurence of the flyer depends on the film thickness as well as on the applied fluence, and a compact flyer is obtaind when these two parameters are optimized.     

Control of polarity of heteroepitaxial ZnO films by interface engineering

Control of polarity of heteroepitaxial ZnO films has been examined by interface engineering. ZnO films were grown by plasma-assisted molecular beam epitaxy on Ga-polar GaN template and c-plane sapphire substrates. Polarity of all the samples is determined by coaxial impact collision ion scattering spectroscopy. Zn- and O-polar ZnO films have successfully grown by Zn- and O-plasma pre-exposures on Ga-polar GaN templates prior to ZnO growth. High-resolution transmission electron microscopy revealed formation of a single-crystalline monoclinic Ga₂O₃ interface layer by O-plasma pre-exposure on Ga-polar GaN templates, while no interface layer was observed for Zn pre-exposed ZnO films. The polarity of ZnO films grown under oxygen ambient on c-plane sapphire with MgO buffer is revealed as O-polar. Fabrication of polarity inverted ZnO heterostructure has been studied: polarity of ZnO films on Ga-polar GaN templates was changed from Zn-polar to O-polar by inserting a MgO layer. High-resolution transmission electron microscopy revealed atomically flat interfaces at both lower and upper ZnO/MgO interfaces and no inversion domain boundaries were detected in the upper ZnO layer.     

Localized grafting through chemical lift-off

In this work we present two techniques that provide localized functionalization of the surface of materials. Both lead to localized grafted thin organic films (10-200 nm). The localization is brought by a chemical lift-off process, which relies on patterned weakly bonded films as sacrificial layers, combined with electrochemical (SEEP) or chemical (GraftFast©) processes which provides the final robust pattern on the surface. Both grafting processes, which were recently described, take advantage of the redox activation of diazonium salts associated with vinylic monomers in aqueous solution, and lead to similar grafted polymer films. Thanks to the high difference in adhesion between the grafted polymer and the patterned sacrificial layer (either an ink or weakly bound self-assembled monolayers), the latter may be easily removed, which unveils uncovered areas of the substrate.     

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

We report the fabrication and electrical characteristics of thin film transistors based on MgZnO thin films with different thicknesses of MgO buffer layer. The MgZnO thin films with MgO buffer layers were grown on SiO₂/p-Si substrates by plasma assisted molecular beam epitaxy. The effects of the buffer layer thickness on the structural properties of MgZnO films are investigated by X-ray diffraction, and the results show that the crystal quality of the MgZnO film is enhanced with 4 nm MgO buffer layer. The MgZnO TFT with 4 nm MgO buffer layer exhibits an n-type enhancement mode characteristics with a field effect mobility of 1.85 cm²/V s, a threshold voltage of 27.6 V and an on/off ratio of above 10⁶.