首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   3篇
  免费   7篇
物理学   10篇
  2018年   1篇
  2013年   2篇
  2011年   2篇
  2010年   2篇
  2009年   3篇
排序方式: 共有10条查询结果,搜索用时 31 毫秒
1
1.
傅兴海  尹伊  张磊  叶辉 《物理学报》2009,58(7):5007-5012
采用直流磁控溅射并通过优化工艺参数,在(100)Si衬底上成功制备了高度(100)择优的MgO薄膜和MgO/TiN双层膜结构.对 (100)MgO择优取向温度影响机理做了详细讨论,并利用XRD,AFM,FESEM等手段研究了在(100)Si和(100)TiN/Si两种衬底上,不同工艺条件下MgO薄膜的表面和断面微观结构,表征了MgO薄膜的柱状生长结构和与TiN薄膜的良好外延关系.在对薄膜光学特性的研究中,利用Sellmeier模型获得了Si上MgO薄膜在可见光波段的折射率参数(550 nm处折射率为1.6 关键词: MgO薄膜 择优取向 直流溅射 折射率拟合  相似文献   
2.
研究了一种LaB6与TaC混合涂层热阴极,其发射层通过均匀混合LaB6与TaC粉末得到。比较了该阴极在LaB6与TaC混合比例为1∶1, 2∶1和3∶1下的发射特性,发现混合型LaB6阴极的功函数与多晶LaB6阴极的非常接近,在3∶1的混合比例下,电极的发射电流稳定,得到的电流密度为30 A/cm2。该电极可被应用于需要大电流密度和超大面积阴极的真空电子器件及动态真空电子束设备中。  相似文献   
3.
马海敏  洪亮  尹伊  许坚  叶辉 《物理学报》2011,60(9):98105-098105
用分子自组装的方法在玻璃衬底上分别制备了TiO2纳米颗粒层和SiO2-TiO2复合纳米颗粒阵列结构. 其中,SiO2 纳米颗粒层用旋涂法制备,得到密排阵列结构,而TiO2纳米颗粒层则用浸渍提拉法制备. 文章分析了TiO2纳米颗粒层和SiO2-TiO2复合纳米颗粒阵列结构的理论粗糙度,并通过扫描电子显微镜研究了它们的微观结构,用接触角 关键词: 自清洁 表面粗糙度 光催化 分子自组装  相似文献   
4.
<正>A new organic-inorganic hybrid material,which shows photo-induced reduction of refractive index as well as volume contraction,is prepared using a sol-gel method.This material is coated on a Si substrate by spin-coating to manufacture film.After irradiated by ultraviolet(UV) light with a deuterium lamp for 5 h, the thickness of film decreases largely by 55%,and the refractive index of film changes from 1.484 to 1.445 at 550 nm.The film's optical thickness exhibits an exponential change with the increasing irradiation time.Futhermore.the photo-patternning of the organic-inorganic hybrid film without any further process (wet etching and thermal curing) is performed utilizing the volume contraction on UV-light irradiation. This film has potential applications for fabrication of patterned filter array and apodizing filter by direct light writing,and also demonstrates good temperature stability and immunity to visible light exposure.  相似文献   
5.
The preparation and characterization of in-plane polarized lead zirconate titanate (PZT) piezoelectric diaphragms for sensors and actuators applications are demonstrated in this letter. The single phase PZT films can be obtained on SiO2-passivated silicon substrates via sol-gel technique, in which PbTiO3 (PT) films are used as seed layers. Al reflective layer is deposited and patterned into concentric interdigitated top electrode by lithographic process, subsequently. The diaphragms are released using orientation-dependent wet etching (ODE) method. The size of the diaphragms is 5 mm in diameter and the outer interdigitated (IDT) electrode diameter (4.25 mm) is fixed at 85~ of the diaphragm diameter. The three-dimensional (3D) profiles results indicate that the measured maximum central deflection at 15 V is approximately 9 μm. Sensing measurements show that the capacitance continually decreases with an increase of applied force, while the case of induced charge exhibits a reverse tendency.  相似文献   
6.
尹伊  傅兴海  张磊  叶辉 《物理学报》2009,58(7):5013-5021
分别采用sol-gel法和磁控溅射法在Si(001)单晶衬底上制备出(111)和(001)取向的MgO缓冲层薄膜,随后在其上生长Ba0.7Sr0.3TiO3(BST30)铁电薄膜.通过X射线衍射,扫描电子显微镜,原子力显微镜等方法研究了薄膜的微结构.实验结果发现,在较厚的MgO(001)缓冲层上可长出(101)取向的BST30薄膜,而在较薄的MgO(111) 缓冲层上则表现出(101)和(111)取向相互竞争的现象,随着MgO(111)缓冲 关键词: 0.7Sr0.3TiO3')" href="#">Ba0.7Sr0.3TiO3 铁电薄膜 择优取向 sol-gel  相似文献   
7.
We report a new structure for broadband antireflection coating by dip-coating technique, which has minimal cost and is compatible with large-scale manufacturing. The coatings are prepared by depositing SiO 2 sol-gel film on a glass substrate, subsequently depositing SiO 2 single-layer particle coating through electrostatic attraction, and depositing a final very thin SiO 2 sol-gel film to improve the mechanical strength of the whole coating structure. The refractive index of the structure changes gradually from the top to the substrate. The transmittance of a glass substrate has been experimentally found to be improved in the spectral range of 400 1 400 nm and in the incidence angle range from 0 to at least 45 . The mechanical strength is immensely improved because of the additional thin SiO 2 sol-gel layer. The surface texture can be applied to the substrates of different materials and shapes as an add-on coating.  相似文献   
8.
The Chiral Magnetic Effect(CME) is a macroscopic manifestation of fundamental chiral anomaly in a many-body system of chiral fermions, and emerges as an anomalous transport current in the fluid dynamics framework. Experimental observation of the CME is of great interest and has been reported in Dirac and Weyl semimetals. Significant efforts have also been made to look for the CME in heavy ion collisions. Critically needed for such a search is the theoretical prediction for the CME signal. In this paper we report a first quantitative modeling framework, Anomalous Viscous Fluid Dynamics(AVFD), which computes the evolution of fermion currents on top of realistic bulk evolution in heavy ion collisions and simultaneously accounts for both anomalous and normal viscous transport effects. AVFD allows a quantitative understanding of the generation and evolution of CME-induced charge separation during the hydrodynamic stage, as well as its dependence on theoretical ingredients. With reasonable estimates of key parameters, the AVFD simulations provide the first phenomenologically successful explanation of the measured signal in 200 AGe V Au Au collisions.  相似文献   
9.
分别采用sol-gel法和磁控溅射法在Si(001)单晶衬底上制备出(111)和(001)取向的MgO缓冲层薄膜,随后在其上生长Ba0.7Sr0.3TiO3(BST30)铁电薄膜.通过X射线衍射,扫描电子显微镜,原子力显微镜等方法研究了薄膜的微结构.实验结果发现,在较厚的MgO(001)缓冲层上可长出(101)取向的BST30薄膜,而在较薄的MgO(111) 缓冲层上则表现出(101)和(111)取向相互竞争的现象,随着MgO(111)缓冲层厚度的增加,BST30薄膜的(101)取向被抑制,而(001)取向逐渐增强.利用反射率测定仪、阻抗分析仪研究了BST30薄膜的光学和电学性能. 通过改进的单纯形法拟合反射率曲线,得到了BST30及其MgO缓冲层薄膜的光学常数, 由BST30薄膜的电压-电流特性(I-V曲线),发现MgO缓冲层对BST30薄膜的漏电流有明显的阻隔作用,可以有效消除BST30膜层的p-n结效应.  相似文献   
10.
基于压电聚合物薄膜可调谐Fabry-Perot滤波器的研究   总被引:2,自引:0,他引:2       下载免费PDF全文
采用DBR/电极/间隔层/电极/DBR的结构形式制作滤波器,器件透光部分刻蚀以消除电光效应.测试滤波器透过率光谱,并通过加电压对滤波器中心波长进行调制.据实际结果得到腔的光学厚度为8.04μm,腔长在电场作用下收缩.在140V电压下,腔长收缩量约为0.757%.实验证明电致伸缩效应在调制中起作用.  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号