| 高功率垂直腔面发射激光器的湿法腐蚀工艺 |
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| 引用本文： | 侯立峰,冯源,杨永庄,瞿建新,赵英杰.高功率垂直腔面发射激光器的湿法腐蚀工艺[J].发光学报,2011,32(6):598-602. |
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| 作者姓名： | 侯立峰 冯源 杨永庄 瞿建新 赵英杰 |
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| 作者单位： | 1. 装甲兵技术学院 电子工程系, 吉林 长春 130117;
2. 长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022 |
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| 基金项目： | 国家自然科学基金(60677009)资助项目 |
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| 摘 要： | 为提高高功率垂直腔面发射激光器(VCSEL)光电性能,对氧化限制型高功率VCSEL湿法腐蚀工艺进行了实验研究。实验中采用H3PO4系溶液替代以往制备此类器件常用的H2SO4系溶液作为高功率VCSEL外延片的腐蚀液,利用扫描电镜(SEM)研究了腐蚀后外延片氧化窗口的腐蚀形貌变化与腐蚀液浓度的关系,消除了以往采用H2SO4系溶液腐蚀时,高功率VCSEL氧化层侧壁出现的"燕尾"结构;通过改变湿法腐蚀工艺的外部温度条件和腐蚀液的浓度配比,实验研究了高功率VCSEL湿法腐蚀速率规律,最后得出了制备高功率VCSEL时湿法腐蚀工艺的最佳外部温度条件与腐蚀液的最佳浓度配比。
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| 关 键 词： | 激光技术 垂直腔面发射激光器 湿法腐蚀 腐蚀速率 |
| 收稿时间： | 2010-12-18 |
The Wet Etching Process of High-power VCSEL |
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| HOU Li-feng,FENG Yuan,YANG Yong-zhuang,QU Jian-xian,ZHAO Ying-jie.The Wet Etching Process of High-power VCSEL[J].Chinese Journal of Luminescence,2011,32(6):598-602. |
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| Authors: | HOU Li-feng FENG Yuan YANG Yong-zhuang QU Jian-xian ZHAO Ying-jie |
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| Institution: | 1. Department of Electronic Engineering, Armor Technique Institute of PLA, Changchun 130117, China;
2. National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China |
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| Abstract: | The processing of the wet etching have been studied with experiments in oxidation confinement high-power vertical-cavity surface-emitting lasers(VCSEL) in order to improve opto-electric characteristics of high-power VCSEL.In the experiments we use the H3PO4 liquid as etching liquid in stead of H2SO4 liquid.The relation between the etching shape change of the epitaxial wafer with etching liquid consistency by scanning electron microscope(SEM),we eliminated the dovetail structure that conventionally happened ... |
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| Keywords: | laser technique VCSEL wet etching etching rate |
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