单锥形纳米孔的制备和离子传导特性研究

用荷能重离子径迹刻蚀的方法在高分子多聚物膜 (PET) 上制备出单锥形纳米孔. 刻蚀过程通过监测跨膜电流来控制, 最大刻蚀电流I_max不同, 得到的锥形孔小孔孔径也不同. 研究单锥形纳米孔在KCl 溶液中的I-V曲线发现, 单锥形纳米孔的离子传导呈现出不对称特性, 该现象称为整流效应, 整流系数γ大小随纳米小孔孔径大小和电解质溶液浓度而变化. 关键词： 径迹刻蚀 纳米孔 离子传导 整流系数     

快重离子辐照金红石型TiO2的肿胀效应及化学蚀刻行为研究

二氧化钛（Titatium Dioxide,简称TiO₂）晶体在中能重离子辐照时表面会出现肿胀效应, 肿胀高度与入射离子的电子能损和辐照注量有关。 辐照后的TiO₂在一定条件下能够被氢氟酸溶液化学蚀刻,化学蚀刻的电子能损阈值为8.2keV/nm,未辐照TiO₂呈现几乎零蚀刻率。要达到饱和蚀刻深度,辐照离子的注量必须大于或等于1×1013ions/cm2。采用离子辐照的潜径迹理论分析研究了辐照损伤及对化学蚀刻的影响, 快重离子辐照结合化学蚀刻是制备TiO₂微结构的有效方法。 There appears volume swelling on the surface of the irradiated rutile TiO₂ crystal and the volume swelling is affected by the ion fluence and the electronic stopping power. To induce adequate irradiation damage for the chemical etching, the irradiation parameters must fulfill some requirement. There is minimum electronic stopping power for the chemical etching of the irradiated region in TiO₂ crystal, which is about 8. 2 keV/nm. If the ion fluence is below 1×1013ions/cm2, the saturated etching depth of the irradiated region in TiO₂crystal cannot be reached. The irradiation damage based on latent track formation frame and the theoretical linkage to the etching technique is investigated. It is hopeful to fabricate micro and nano scale structurce in rutile TiO₂ crystal by using the ion irradiation and chemical etching technique.      

快重离子微观尺度二维分布的模拟研究

在快重离子的辐照中,无论通过束流扫描还是束流散焦,在微观尺度上入射离子依然是随机分布的。最近,这种微观上的离子不均匀性对于快重离子的前沿应用,如高密度微孔膜的制备和航空电子器件的单粒子效应的评估等变得至关重要。本工作利用蒙特卡罗方法模拟了垂直于束流方向的二维平面上随机分布的离子。从统计角度来看,蒙特卡罗方法模拟的潜径迹的分布与相同离子注量下微孔膜的电镜观测结果相一致。根据模拟结果,微孔膜的有效孔隙率可以通过辐照注量和孔径来进行有效预测。另外,也提出了计算有效孔隙率的经验公式。利用此公式可以在一定程度上预测最优化的离子辐照和化学蚀刻参数,从而得到理想的孔隙率。同时,为了评估微孔膜的选择性,计算了形成重孔的概率,这有助于在膜的孔隙率和选择性之间达到平衡,从而获得最好的膜性能。通过蒙特卡罗模拟,还研究了微观尺度下离子辐照的均匀性问题,其结果可以为单粒子效应等应用提供重要参考。     

抗金属污染的超绝缘材料研究

使用串列加速器产生的32S离子对不同厚度的聚碳酸酯、聚脂膜进行了不同密度的辐照，并在不同温度、不同碱度和不同蚀刻时间条件下，研究了蚀刻对孔形状、孔径以及膜表面损耗等的影响.通过表面金属镀膜的方式研究了该膜的抗金属污染的绝缘性能.结果显示，其抗金属污染的绝缘性能得到了大幅度提高.     

快重离子辐照聚酰亚胺潜径迹的电子能损效应

快重离子辐照聚合物材料时，由于密集电离激发在其路径上产生几纳米直径的潜径迹，径迹形貌受离子种类、离子能量等多种因素的影响.为了研究电子能损对径迹形成所起的作用，利用1.158GeV 的Fe⁵⁶离子和 1.755GeV Xe¹³⁶离子在室温真空环境下辐照叠层聚酰亚胺(PI)薄膜，结合傅里叶转换红外光谱(FTIR)分析技术对辐照引起的化学变化进行了测量.聚酰亚胺官能团的降解及炔基的生成是离子辐照聚合物的主要特征，在注量1×10¹¹到6×10¹²/cm²范围及较宽的电子能损(dE/dX)_e范围 (Fe⁵⁶ 离子：2.2 到 5.2 keV/nm， Xe¹³⁶ 离子：8.6 到 11.3 keV/nm)对官能团的断键率及炔基生成率进行了研究. 红外结果显示在实验涉及的能损范围都有炔基生成，应用径迹饱和模型对实验结果进行拟合，不同能损下的平均损伤径迹半径及炔基生成径迹半径被得到，通过热峰模型对实验结果拟合，给出了离子在聚酰亚胺中产生潜径迹的能损阈值，实验给出的径迹形貌的电子能损效应曲线与热峰模型预言走势基本一致. 关键词： 离子辐照 潜径迹 红外光谱 热峰模型     

纳米孔径核孔膜的制备研究

高能硫、氪、氙离子轰击聚酯(PET)和聚碳酸酯(PC)膜后,对样品进行陈化和紫外线照射敏化.用电导法着重研究蚀刻条件对样品的归一化径迹蚀刻速率(灵敏度)的影响,结果表明优化条件下灵敏度较通用条件下提高约2倍,PET的灵敏度可达1000,PC的灵敏度可达2000,可以用于制备纳米孔径核孔膜.核孔膜中填充的铜纳米线的电镜照片显示出纳米线最小直径为20nm.用电导法计算纳米孔的孔径,该值与纳米线直径的电镜测量值在孔径大于30nm时符合良好.     

纳米孔径核孔模的制备研究

高能硫、氪、氙离子轰击聚酯（PET）和聚碳酸酯（PC）膜后,对样品进行陈化和紫外线照射敏化。用电导法着重研究蚀刻条件对样品的归一化径迹蚀刻速率（灵敏度）的影响,结果表明优化条件下灵敏度较通用条件下提高约2倍,PET的灵敏度可达1000,PC的灵敏度可达2000,可以用于制备纳米孔径核孔膜。核孔膜中填充的铜纳米线的电镜照片显示出纳米线最小直径为20nm。用电导法计算纳米孔的孔径,该值与纳米线直径的电镜测量值在孔径大于30nm时符合良好。     

纳米孔径核孔膜的制备研究

高能硫、氪、氙离子轰击聚酯(PET)和聚碳酸酯(PC)膜后，对样品进行陈化和紫外线照射敏化．用电导法着重研究蚀刻条件对样品的归一亿径迹蚀刻速率(灵敏度)的影响，结果表明优化条件下灵敏度较通用条件下提高约2倍，PET的灵敏度可达1000，PC的灵敏度可达2000，可以用于制备纳米孔径核孔膜．核孔膜中填充的铜纳米线的电镜照片显示出纳米线最小直径为20nm．用电导法计算纳米孔的孔径，该值与纳米线直径的电镜测量值在孔径大于30nm时符合良好．     

~(32)S离子辐照PET薄膜制备亚微米孔径核孔膜研究

使用中国原子能科学研究院HI-13串列加速器产生的32S离子轰击BOPET薄膜,薄膜在空气中陈化3个月后在专用装置中使用Na OH溶液蚀刻制备核孔膜,研究Na OH溶液浓度、蚀刻温度对微孔孔形的影响。在不同温度和蚀刻液浓度条件下,蚀刻出微孔孔径为0.2至0.93μm的亚微米核孔膜,计算其微孔锥角,得出微孔锥角随着蚀刻温度、蚀刻液浓度和微孔孔径的变化趋势。研究表明,采用低浓度、高温度的Na OH溶液蚀刻有利于减小微孔锥角,有利于制备较小孔径的核孔膜。如选用0.5mol/L的Na OH溶液浓度,在蚀刻温度为90℃的条件下蚀刻,此时蚀刻时间小于2 h,既可以得到高质量微孔膜也有利于提高生产效率。     

重离子辐照SiO2通过能量损失产生发光色心的研究

通过红外光谱和荧光发射光谱分别对600 keV、4 MeV和5 MeV Kr离子辐照的SiO2进行发光特性的研究。在低能量辐照体系中,简单色心(F2色心)的形成在损伤过程中占据主导地位,其主要诱发蓝光发射带;在高能离子辐照条件下,离子径迹上的能量密度较大,因此缺陷浓度的增大产生了一些缺陷团簇和离子径迹,形成了复杂的色心(F2+和F3+色心等)并诱发了强烈的绿光发射带和红光发射带。该实验结果与能量损失过程中统一热峰理论模型(一个综合的基于电子能损与核能损的非弹性碰撞模型和弹性碰撞模型)的模拟结果能够很好地吻合,表明在keV～MeV能区上存在电子能损过程与核能损过程的协同效应。     

Electrophoretic NMR studies of electrical transport in fluid-filled porous systems.

An NMR technique is described which allows the observation of ionic charge carriers moving in the electric field within a porous system saturated with electrolyte solution. This method, which was recently developed in our laboratory, gives experimental access to the study of electric transport in disordered media on a microscopic level and offers new potential for morphology studies. We performed 1H NMR PFG self-diffusion measurements on ions combined with ionic drift velocity measurements by electrophoretic NMR (ENMR), each as a function of observation time Delta. In this way we obtained time-dependent self-diffusion coefficients D(+/-) (Delta) and time-dependent electric mobilities mu(+/-) (Delta) of polyatomic cations and anions in porous media. The porous media used were gels and glass bead packs. From the behaviour of D(+/-) (Delta) and mu(+/-) (Delta) at long observation times the tortuosities T(p) (D(+/-)) and T(p) (mu(+/-)) are derived, allowing a direct experimental check of the validity of the Einstein relation (D(+/-) is proportional to mu(+/-)) in a disordered medium. The tortuosities obtained via the diffusivity of ions are compared with those obtained via the diffusivity of water molecules. We also make a first attempt to derive the specific surface S/V(p) from the time-dependence of the ionic mobility at short observation times and discuss possible advantages of those measurements in morphology studies of porous media.     

Effect of oxygen implantation on ionoluminescence of porous silicon

We report on ionoluminescence investigations of porous Si prepared from the p⁺-type Si, which exhibited, after prolonged ambient air exposure, moderate photon emission with a maximum in the red–orange region. In an attempt to activate a shorter wavelength emission, the samples were implanted with 225 keV O⁺ ions at the dose of 1×10¹⁷ cm⁻². The strong blue band at 2.7 eV, well known in silica, has emerged in the ionoluminescence spectra following the oxygen implantation. The results of the comparative ionoluminescence experiments, performed on both porous Si and two forms of silica, show the important role of SiO₂ defect-related states in ion-induced optical emission from porous Si.     

Optical properties of erbium-doped porous silicon waveguides

Planar and buried channel porous silicon waveguides (WG) were prepared from p⁺-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl₃-saturated solution. Erbium concentration of around 10²⁰ at/cm³ was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 μs was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.     

Novel synthesis of highly porous three-dimensional nickel cobaltite for supercapacitor application

Highly porous 3D nickel cobaltite nanoparticles were synthesized by combustion technique. X-ray diffraction study reveals the changes in phase, crystallinity, and particle size of the prepared samples with respect to calcination temperature. Typical porous 3D foam like morphology of the materials was identified from the FESEM and HRTEM images. BET measurement further confirms the mesoporous nature of the samples with high-surface area. Mixed valence state of ions was identified from XPS measurements. Electrochemical studies disclose the impact of calcination temperature on the electrodes capacitive performance. 3D porous morphology of the material allows the complete utilization of active material available for the electrolyte ions. NiCo₂O₄ calcined at 400 °C exhibited the maximum specific capacitance of 908 Fg⁻¹ at 5 mV/s scan rate among the prepared samples and 90 % capacitance retention at the end of 1000 cycles. Impedance study demonstrates the low resistance and facile diffusion of electrolyte ions within the material.

     

The (29)Si T(1) and T(2) NMR relaxation in porous paramagnetic material SiO(2)-MnO-Al(2)O(3)

The (29)Si spin-lattice relaxation in porous silica-based material 1, doped by ions Mn(2+) at a Si/Mn ratio of 3.5, is non-exponential, independent of magic-angle spinning (MAS) rates and governed by direct dipolar coupling between electron and nucleus where an electron relaxation time is estimated to be about 10(-8)s. In the absence of mutual energy-conserving spin flips (spin diffusion) in 1, the (29)Si T(2) time increases linearly with spinning rates. None was observed in diamagnetic porous system 2. The unexpected (29)Si T(2) dependence has been interpreted in terms of the large bulk magnetic susceptibility (BMS) effects. It has been shown that editing the (29)Si Hahn-echo MAS NMR spectra eliminates wide lines, belonging to (29)Si nuclei in the proximity of paramagnetic centers, and reduces the BMS broadenings in sideband patterns for nuclei remote from these centers.     

Preparation and Properties of Novel Modified Humidity Control Composite Materials

Montmorillonite /polyacrylamide (MMT/PAM) humidity control materials, with the MMT modified separatly by argent-ammonium complex ions ([Ag(NH₃)₂]⁺) and copper ions (Cu²⁺) (Ag-MMT/PAM, Cu-MMT/PAM) were prepared. The structures of the Ag-MMT/PAM and Cu-MMT/PAM were characterized with X-ray diffraction (XRD), Fourier transform infrared spectra (FTIR) and scanning electron microscopy (SEM). The humidity control property was examined by a desiccator method. Antibacterial properties were tested with an inhibition zone method. The results showed that the structures of Ag-MMT/PAM and Cu-MMT/PAM were loose and porous. Polyacrylamide was intercalated into the layers of the MMT. The increasing interlayer spacings of Ag-MMT/PAM and Cu-MMT/PAM were from 1.51 nm for the original MMT to 2.04 nm and 2.11 nm, respectively. Both Ag-MMT/PAM and Cu-MMT/PAM presented good humidity control and antibacterial properties.     

Surface morphology of Mn implanted Ge(1 0 0): A systematic investigation as a function of the implantation substrate temperature

Ge (1 0 0) wafers were implanted with 100 keV Mn⁺ ions with a dose of 2 × 10¹⁶ ions/cm² at different temperatures, ranging from 300 to 573 K. The surface morphology of implanted samples, analyzed with scanning electron microscopy and atomic force microscopy measurements, reveals for the 300-463 K implant temperature range the formation of a surface swelled and porous film, containing sponge-like structures. On the contrary, samples implanted in the 513-573 K temperature range present an atomically flat surface, with a roughness less than 1 nm, indicating that crystalline order has been preserved. X-ray photoemission spectroscopy depth profiling measurements indicate the presence of adsorbed oxygen in the porous layer of lower-temperature implanted samples, as well the presence of a large Mn concentration below the expected end of range for impinging ions. Mn and O concentrations at anomalously great depths are maximum in the 413 K implanted sample, indicating that the phenomenon of ion beam induced porosity is best favored at a well defined temperature.     

多孔硅/DR1复合膜三阶非线性光学性质的研究

采用物理吸附方法制备出多孔硅和偶氮化合物染料分散红（DR1）的复合薄膜.用单光束扫描法研究了多孔硅/ DR1复合膜的三阶非线性光学性质，测量了在1064 nm处多孔硅/DR1复合膜的双光子吸收系数和非线性折射率.实验结果表明，同多孔硅相比，多孔硅/DR1复合膜三阶非线性光学效应明显得到了增强.     

Effect of pore structure parameters of porous glass on luminescence properties of Eu/Dy co-doped high silica luminescence glass

The Eu²⁺/Dy³⁺ co-doped high silica luminescence glasses were prepared through sintering porous glasses which have adsorbed rare earth ions previously and the effect of pore structure parameters including average pore size, specific surface area, and pore volume on luminescence properties of high silica glass were analyzed by utilizing BET method and emission spectra. The results show that the pore parameters of porous glasses do not affect the shapes of emission spectra but affect the luminescence intensities of high silica glasses. The luminescence intensities of high silica glass increase when the specific surface area of porous glasses increases, which can be interpreted by mechanism of adsorption of rare earth ions onto porous glass. The average pore size and pore volume indirectly affect the luminescence intensities through influencing specific surface area of porous glass.     

Study of porous carbon thin films produced by pulsed laser deposition

Amorphous carbon is an interesting material and its properties can be varied by tuning its diamond-like (sp³) fractions. The diamond-like fractions in an amorphous carbon films depends on the kinetic energy of the deposited carbon ions. Porous amorphous carbon thin films were deposited onto silicon substrates at room temperature in a vacuum chamber by Glancing Angle Pulsed Laser Deposition (GAPLD). Krypton fluoride (248 nm) laser pulses with duration of 15 ns and intensities of 1-20 GW/cm² were used. In GAPLD, the angles between the substrate normal and the trajectory of the incident deposition flux are set to be almost 90°. Porous thin films consisting of carbon nanowires with diameters less than 100 nm were formed due to a self-shadowing effect. The kinetic energies of the deposited ions, the deposition rate of the films and the size of the nanowires were investigated. The sp³ fraction of the porous carbon films produced at intensity around 20 GW/cm² were estimated from their Raman spectra.