重离子辐照SiO2通过能量损失产生发光色心的研究

通过红外光谱和荧光发射光谱分别对600 keV、4 MeV和5 MeV Kr离子辐照的SiO2进行发光特性的研究。在低能量辐照体系中,简单色心(F2色心)的形成在损伤过程中占据主导地位,其主要诱发蓝光发射带;在高能离子辐照条件下,离子径迹上的能量密度较大,因此缺陷浓度的增大产生了一些缺陷团簇和离子径迹,形成了复杂的色心(F2+和F3+色心等)并诱发了强烈的绿光发射带和红光发射带。该实验结果与能量损失过程中统一热峰理论模型(一个综合的基于电子能损与核能损的非弹性碰撞模型和弹性碰撞模型)的模拟结果能够很好地吻合,表明在keV～MeV能区上存在电子能损过程与核能损过程的协同效应。     

载能离子辐照的ODS铁素体钢硬化效应的研究

研究了氧化物弥散强化(ODS) 的3 种铁素体钢,包括: 19Cr-3.5Al ODS钢(MA956),16Cr-0.1TiODS和16Cr-0.1Zr ODS铁素体钢,在多能量的氦离子和MeV能量级的Bi、Xe 离子辐照条件下的硬化效应。获得了辐照硬化与原子离位损伤水平(dpa)、He 注入浓度的关系。结果表明,材料的硬度在低剂量范围会随着辐照剂量迅速增加,而在高剂量范围材料的硬度逐渐趋于饱和,可以用1/2 次的幂函数拟合辐照硬化与离位损伤水平之间的关系。不同入射离子——Bi离子和Xe离子都会引起ODS 钢的硬化,而氦离子还会在材料中聚集导致氦泡的形成,造成更加明显的硬化。实验证明,Ti 或Zr 掺杂的16Cr-ODS 铁素体钢较19Cr-3.5AlODS钢具有更强的抗辐照硬化能力,原因可归于其含有更高数密度的细小氧化物粒子——能够有效俘获点缺陷和氦原子,从而有效抑制晶粒内部和晶界出缺陷的长大。The present work investigates the irradiation hardening of ODS ferritic steels after multi-energy Heion implantation, or energetic Bi-ion and Xe-ion irradiation, to get an understanding of dependence of irradiationhardening on atomic displacement damage and gas accumulation. Three kinds of high-Cr ODS ferritic steels including the commercial MA956 (19Cr-3.5Al), the 16Cr-0.1Ti and the 16Cr-0.1Zr ODS ferritic steels were used.The results show that the hardness increases rapidly at the lower doses but tends to saturate at the higher dose.An 1/2-power law dependence on dpa value is obtained. Helium implantation contributes significantly to the irradiation hardening, possibly due to the impediment of the motion dislocations by helium bubbles. 16Cr-ODS (Ti or Zr added) ferritic which contains finer oxide particles in higher number density shows higher resistance to irradiation hardening than the MA056.     

电子束辐照剂量对PAN/PEO交联度的影响

对PAN/PEO凝胶(5%PAN,5%PEO)在1.0 MeV电子束下进行了不同剂量的辐照。红外光谱测量表明,PAN/PEO凝胶辐照后发生了化学交联。分析结果指出,PAN/PEO的凝胶分数随着辐照剂量的增加而不断增加;其凝胶分数增长率的变化可以分为3个阶段,即快速增加阶段(0~39kGy)、下降阶段(39~130 kGy)和稳定阶段(130 kGy)。拟合发现,引入材料刚性参数β的半经验修正方程与未考虑材料刚性的Char1esby-Pinner方程相比,更符合实际测量值(对于该配比PAN/PEO,β为0.166)。交联度-辐照剂量曲线显示,交联度随辐照剂量的增加而增加,为设计新型能功能材料中所需的固定交联度的PAN/PEO凝胶提供了辐照剂量参考值。     

高能238U离子辐照AlN 晶体薄膜的光学特性研究

通过傅里叶变换红外光谱、拉曼光谱和光致发光谱测试手段分析了由HIRFL 提供的高能238U离子辐照AlN 晶体薄膜的光学特性变化。辐照后出现了A1(To),A1(Lo),E1(To) 和E2 等声子振动吸收模式,并且辐照使其在样品近表面Al—N 等振动模式遭到破坏后悬空的Al— 键很快与空气中的O离子发生结合,形成了Al—O 键。综合分析得出了蓝光发射带是与O 离子相关的VAl-ON-3N 和VAl-2ON-2N两种类型缺陷以及F-型缺陷聚合所致;绿光发射带是由基底中Al 原子产生的价带之间的跃迁所致。AlN thin film irradiated with 100 MeV 238U ions delivered from HIRFL (Heavy Ion Research Facility in Lanzhou) were investigated by Fourier Transform Infrared spectra, Raman spectra and Photoluminescence spectra. Phonon vibration absorption modes including A1(To), A1(Lo), E1(To) and E2 appeared in the irradiated samples. The irradiation made the Al—N bonds broken and the formation of Al—dangling bonds, which combined soon with oxygen atoms existing in air to form Al—O bonds. Blue light emission band are related to the two types of defects of VAl-ON-3N and VAl-2ON-2N and F-type defects aggregation. Green light emission band is due to energy transition among valence band of Al atoms in sapphire substrate.