Cr掺杂对Bi0.5Ca0.5MnO3磁性和电输运性质的影响

通过对M～T曲线、M～H曲线和P～T曲线的测量,研究了Bi0.5Ca0.5Mn1-xCrxO3(O≤x≤0.12)系列样品的磁性和电输运特性.结果表明,随Cr掺杂量的增加,反铁磁转变和电荷有序转变分别在x～0.03和x～0.12相继消失.低温下始终出现自旋玻璃或团簇玻璃行为,说明存在反铁磁与铁磁的相互竞争.对电阻率数据的拟合表明,所有组分载流子的电输运可用可变程跃迁描述.我们用相分离的图象解释了相关现象.     

稀磁半导体--自旋和电荷的桥梁

稀磁半导体可能同时利用载流子的自旋和电荷自由度构造将磁、电集于一体的半导体器件．尤其是铁磁半导体材料的出现带动了半导体自旋电子学的发展．室温铁磁半导体材料的制备，半导体材料中有效的自旋注入，以及自旋在半导体结构中输运和操作已成为目前半导体自旋电子学领域中的热门课题．稀磁半导体呈现出强烈的自旋相关的光学性质和输运性质，这些效应为人们制备半导体自旋电子学器件提供了物理基础．     

La0.7-xDyxSr0.3MnO3(0.00≤x≤0.30)体系低温磁行为和电阻率的反常

通过测量样品的磁化强度-温度曲线、电阻率-温度曲线及磁电阻-温度曲线.研究了 Dy 掺杂(0.00≤x≤0.30)对 La_(0.7-x)Dy_xSr_(0.3)MnO_3 体系磁电性质的影响.实验发现,随 Dy 掺杂量的增加,体系磁结构从长程铁磁有序向自旋团簇玻璃态、反铁磁状态转变；x=0.20、0.30时的低温磁行为发生异常,电行为存在低温电阻率极小值现象.这些奇特现象不仅来源于掺杂引起的晶格效应,也来源于掺杂引起的额外磁性耦合.     

La_(0.4)Ca_(0.6)MnO_3中Mn-位Fe和Cr掺杂对磁性质的影响

研究了Fe和Cr掺杂对La0.4Ca0.6Mn O3中电荷有序反铁磁基态的调控作用.磁性质的测量结果表明,两种离子掺杂均能有效抑制原型样品中的长程电荷有序相,但是Fe离子掺杂样品均具有反铁磁的基态,而Cr掺杂样品中则出现了显著的铁磁性.结合电输运测量结果显示,Cr掺杂引起的铁磁态同时具有金属性,表明其中是电子双交换作用占主导.对比两种掺杂离子的电子结构发现,Cr离子空的e g电子轨道促进了电子双交换作用,而Fe掺杂则只是引入了不同的自旋交换作用,导致自旋无序.     

钙钛矿锰氧化物(Nd1-xLax)0.5Ca0.5MnO3体系中的铁磁再入现象

研究了(Nd1-xLax)0.5Ca0.5MnO3(0≤x≤0.5)体系的X射线衍射谱,Raman吸收谱和电输运特性.通过电输运性质的测量给出了金属绝缘转变温度Tm与A位离子平均半径之间的关联.结果表明,La3 离子的掺杂压制低温下的电荷有序,导致金属绝缘转变开始出现,且随掺杂浓度的增加,金属绝缘转变(MI)温度(Tm)向高温区移动,对应的峰值电阻率ρp降低.X射线衍射谱和电输运特性均表明,La3 离子的掺入使得A位平均离子半径(〈rA〉)增大,导致局部晶格畸变减小.在掺杂量0.3≤x≤0.5的区域范围内,随着x的增加,双交换作用逐渐增强,有利于低温下铁磁态的形成.但热循环实验的研究结果表明,这种铁磁态属于亚稳态,在能量上反铁磁态比铁磁态更稳定.     

(La_(1-x)Ce_x)_(2/3)Ca_(1/3)MnO_3体系的结构和输运性质研究

对Ce掺杂锰氧化物 (La1 -xCex) 2 3Ca1 3MnO3(x =0— 1.0 )多晶样品的结构和输运性质系统研究的结果 .实验表明 ,在低掺杂浓度下 ,样品呈现完整的正交钙钛矿结构 ;随掺杂浓度的增加 ,有少量CeO2 杂相出现 ,同时伴随有Ce3 和Ce4 离子两种价态的涨落和Mn2 Mn3 Mn4 混合价态的共存 ,Ce掺杂导致的体系无序度增加 ,使得绝缘体 -金属 (I M)和顺磁 -铁磁 (PM FM)转变温度向低温方向移动 .有趣的是 ,Ce掺杂样品的电阻率测量I M转变峰值温度TIM 较PM FM转变温度Tc 为高 ,其差值ΔT(=TIM -Tc)随Ce掺杂含量的增加而增加 ,最大差值ΔT达 5 0K .各样品的磁电阻则随温度的降低而增加 ,在Tc 附近MR达到最大值 ,且随Ce掺杂含量增加Tc 附近的MR最大值迅速增加 ,达到 10 4 %以上 ,表现出很强的庞磁电阻效应 .在x≥ 0 .7时 ,磁电阻效应则表现出反常减小 .整体上而言 ,各样品的磁特性与输运行为间有较强的关联 ,电输运特性可用双交换作用模型进行很好的解释 ,在高温区满足热激活模型 .最后 ,在Ce掺杂对Tc 和MR的影响机理方面进行了初步讨论 .     

Eu掺杂对Ca_3Co_4O_9磁性、电输运和热电性质的影响

采用固相反应法制备了单相的Ca3-xEuxCo4O9(x=0.00,0.10,0.20,0.30)系列多晶样品,并系统地研究了其磁性、电输运和热电性质.结果表明,随着Eu掺杂浓度的增加,亚铁磁转变逐渐消失,低温导电机制由热激活半导体转变为二维变程跳跃;热电势也随着掺杂量x而增加,当x增加到0.2时热电势在低温呈现陡然的上翘,导致热电优值(ZT)大幅度增加.我们将低温热电势行为归结于两个方面的原因:一是三价Eu3+离子替换二价Ca2+引起载流子浓度减小,导致电子关联效应增强;二是掺杂破坏磁有序引起自旋熵的增加.     

La_(2/3)Ca_(1/3)Mn_(1-x)Fe_xO_3电磁输运性质和电子自旋共振谱的研究

用固相合成法制备了La2/3Ca1/3Mn1-xFexO3(x=0、0.1、0.2)材料,通过X射线衍射、磁化强度-温度曲线、电子自旋共振谱线,研究了Fe替代部分的Mn对La2/3Ca1/3Mn1-xFexO3电磁性质的影响.结果表明:Fe离子掺杂对晶体结构影响较小;对电磁输运性质和磁结构影响较大,体系在低温区域较宽的温度范围内显示出巨磁电阻效应;ESR的测量结果也表明Fe离子掺杂形成反铁磁的交换作用,阻塞了铁磁Mn3+-O-Mn4+双交换通道,降低了体系的铁磁性.     

表面活性剂和n型载流子对钴掺杂氧化锌薄膜铁磁性的双重调控

本文提出了一种利用表面活性剂钝化和电子载流子掺杂来调制钴掺杂氧化锌稀磁半导体薄膜固有铁磁性的"双重操纵效应"新方法.第一性原理计算表明,氢表面钝化作为薄膜表面Co-O-Co磁耦合的磁开关,可以控制掺杂钴原子的自旋极化.同时,电子载流子掺杂可以进一步用作类层状铁磁性媒介来调节薄膜内部原子层的铁磁性.该双重操纵效应揭示了n型钴掺杂氧化锌稀磁半导体薄膜的本质铁磁性来源,并且还有可能用作其他n型稀磁半导体氧化物薄膜增强铁磁性的替代策略.     

二氧化铈基稀磁氧化物的第一性原理研究

基于第一性原理的计算方法研究了纯CeO_2、Co掺杂CeO_2和同时引入氧空位Vo和Co掺杂的CeO_2稀磁半导体体系.通过计算体系的能带结构和态密度,探讨了该体系磁性产生的机制.计算发现,纯CeO_2体系不具有磁性;没有氧空位Vo的Co掺杂CeO_2体系中,Co离子之间通过O原子发生超交换反铁磁耦合,体系无铁磁性;当氧空位Vo和Co离子同时存在于CeO_2体系中时,Co离子之间通过氧空位Vo发生铁磁耦合,该体系表现出铁磁性能.另外,由氧空位Vo诱导的Co离子之间的铁磁耦合不仅发生在紧邻的两个Co离子,而且可以扩展到几个原子距离的长度.计算结果证明了氧空位Vo诱导铁磁性耦合机制.本文工作将为CeO_2基稀磁半导体体系制备与磁学性质的研究提供支持.     

Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates

Passivation treatment on indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04Te substrates by molecular beam epitaxy has been performed in order to improve the surface stability of the Hg_0.8Cd_0.2Te layers. Room-temperature capacitance–voltage measurements clearly revealed metal-insulator–semiconductor (MIS) behavior for the Al/ZnS/passivated Hg_0.8Cd_0.2Te layer/Cd_0.96Zn_0.04Te diodes. The fast state density and the fixed charge density of the Al/ZnS/passivated Hg_0.8Cd_0.2Te/Cd_0.96Zn_0.04Te diode with a sulfur-treated Hg_0.8Cd_0.2Te layer were smaller than those with a chemically oxidized Hg_0.8Cd_0.2Te layer. The interface state density at the ZnS/sulfur-treated Hg_0.8Cd_0.2Te interface were low at 10¹¹ eV⁻¹ cm⁻² at the middle of the Hg_0.8Cd_0.2Te energy gap. These results indicate that the Hg_0.8Cd_0.2Te epilayer is significantly passivated by sulfur treatment and that the passivated Hg_0.8Cd_0.2Te layers can be used for Hg_1−xCd_xTe-based MIS diodes and MIS field-effect transistors.     

单轴压力下Ge2X2Te5(X=Sb,Bi)薄膜拓扑相变的第一性原理研究

随着拓扑绝缘体的发现, 材料拓扑物性的研究成为凝聚态物理研究的热点领域. 本文基于第一性原理计算, 研究了化合物Ge₂X₂Te₅ (X=Sb, Bi) 的块体结构和二维单层和双层薄膜结构的拓扑物性, 以及单双层薄膜在垂直方向单轴压力下的拓扑量子相变. 研究发现, A型原子序列排列的这两种化合物都是拓扑绝缘体, 其单层薄膜都是普通金属, 而双层薄膜都是拓扑金属, 单层和双层薄膜在单轴加压过程中都没有发生拓扑量子相变; 这两种化合物的B型原子序列的晶体是普通绝缘体, 其所对应的薄膜, Ge₂Sb₂Te₅单层是普通金属, 双层薄膜和Ge₂Bi₂Te₅的单层和双层薄膜均为普通绝缘体, 但是在单轴加压过程中B 型原子序列所对应的单层和双层薄膜都转变为拓扑金属.     

Synthesis and thermoelectric properties of Bi-doped SnSe thin films

Bi doped n-type SnSe thin films were prepared by chemical vapor deposition (CVD) and their structure and thermoelectric properties were studied. The x-ray diffraction patterns, x-ray photoelectron spectroscopy, and microscopic images show that the prepared SnSe thin films were composed of pure SnSe crystals. The Seebeck coefficients of the Bi-doped SnSe were greatly improved compared to that of undoped SnSe thin films. Specifically, Sn_0.99Bi_0.01Se thin film exhibited a Seebeck coefficient of -905.8μV·K^-1 at 600 K, much higher than 285.5 μV·K^-1 of undoped SnSe thin film. Further first-principles calculations reveal that the enhancement of the thermoelectric properties can be explained mainly by the Fermi level lifting and the carrier pockets increasing near the Fermi level due to Bi doping in the SnSe samples. Our results suggest the potentials of the Bi-doped SnSe thin films in thermoelectric applications.     

Bi-YIG的穆斯堡尔谱研究

本文对Y_3-xBi_xFe₅O₁₂石榴石型铁氧体(x=0,0.06,0.15,0.32,0.57,0.85,1.00)的穆斯堡尔谱进行了讨论。对此材料的居里温度随其Bi含量x的增加而升高的机理提出了初步看法。 关键词：     

MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光

利用Raman显微镜系统对两块用MOCVD方法在Cd_0.96Zn_0.04Te衬底上生长的Hg_0.8Cd_0.2Te外延薄膜样品在光谱范围50～5000cm^-1进行了测量,在其中的一块样品上首次发现了143eV至193eV范围内出现的具有周期结构的光致发光峰,该发光峰对应的能带中心位于Hg_0.8Cd_0.2Te外延层导带底上方173eV,在另外一块外延薄膜样品中仅观察到四个Raman散射峰,没有周期结构的发光峰。为了分析上述光致发光的起因,对两块样品进行了X射线的双晶回摆曲线样品结构分析,得出样品在143eV至193eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致,通过分析指出该光致发光峰是来源于Hg_0.8Cd_0.2Te外延层中的阴性离子空位的共振能级。     

FORMATION AND MAGNETIC PROPERTIES OF NEW COMPOUNDS R3Fe29-xCrx(R=Y,Ce,Nd,Sm,Gd,Tb,and Dy)

A systematic investigation of structure and magnetic properties of the new R₃Fe_29-xCr_x compounds(R=Y,Ce,Nd,Sm,Gd, Tb,and Dy)has been performed. The Curie temperature of R₃Fe_29-xCr_x increased with increasing atomic number fromR=Ce to Gd and de creased from Gd to Dy. The saturation magnetization of R₃Fe_29-xCr_x at 4.2 K decreased gradually with increasing atomic number from R=Y to Dy,except for Ce. The spin reorientations of the easy magnetization d irection were observed at around 230 K for Nd₃Fe_24.5Cr_4.5 and 180 K for Tb₃Fe_28.0Cr_1.0,and the magnetohistory effects were obser ved for Nd₃Fe_24.5Cr_4.5 and Sm₃Fe_24.0Cr_5.0 in a low field of about 0.04 T. First order magnetization process occurs in magnetic field of around 2.3 T at room temperature for Tb₃Fe_28.0Cr_1.0. The saturation magnetization of Y₃Fe_27.2Cr_1.8 at 4.2 K is 52.2μ_B/f.u., which corresponds to an average magnetic moment of 1.92μ_B per each Fe atom.     

Composition and electric field effects on the transport properties of Bi doped chalcogenide glasses thin films

The temperature dependence of the DC electrical conductivity σ_DC was measured in the temperature range from 300–500 K. It was found that there are double activation energies, E_σ, for Ge₂₀Se_80−xBi_x (x=0, 2.5 and 5 at%) films, while there is single activation energy for Ge₂₀Se_72.5Bi_7.5. when incorporation of Bi=7.5 at%, the pre-exponential value σ₀ decreases by about six order of magnitude, the activation energy in the extended states E_σ decreases from 0.96 to 0.09 eV. Also the effect of applied electric field was studied and observed that, activation energy in high temperature region increases with increasing electric field; this behavior can be understood assuming that the contribution to the conductivity activation process is due to conduction in the extended states and also due to hopping in the localized states. With the increasing electric field, as former process, which is having high activation energy, becomes more predominant due to the dumping of the carriers in the extended states, the effective activation energy of the system increases, in spite of the fact that the activation energy of the extended states conduction may remain constant. Finally, the electrical data suggests that the addition of bismuth produces localized states near the conduction band edge so that the electrical transport is due to hopping of electrons after being excited into localized states at the conduction band edge.     

STRUCTURE AND MAGNETIC PROPERTIES OF NITRIDES R3Fe29-xCrxN4

A systematic investigation of nitrides R₃Fe_29-xCr_xN₄(R=Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed. The nitrogen concentration in the nitride R₃Fe_29-xCr_xN_y was determined to be y=4. Nitrogenation leads to a relative volume expansion of about 5.3%. The lattice constants and unit cell volume decrease with in creasing rare earth atomic number from Nd to Dy, reflecting the lanthanide contraction. In average, the increase of Curie temperature upon nitrogenation is about 200 K, compared with its parent compound. The nitrogenation also results in a remarkable improvement in the saturation magnetization and anisotropy fields for R₃Fe_29-xCr_xN₄ at 4.2 K and room temperature, comp ared with their parent compounds. A spin reorientation of Nd₃Fe_24.5 Cr_4.5N₄ occurs at around 368 K, which is 138 K higher than that of Nd₃Fe_24.5Cr_4.5.Magnetohistory effects of R₃Fe_29-xCr_xN₄(R=Nd and Sm) are observed in a low field of 0.04 T. First order magneti zation process occurs in Sm₃Fe_24.0Cr_5.0N₄ in magnetic fields of around 3.0 T at 4.2 K. After nitrogenation the easy magnetization direction of Sm₃Fe_24.0Cr_5.0 is changed from the easy cone structure to the uniaxial. The excellent intrinsic magnetic properties of Sm₃Fe_24.0Cr_5.0N₄ make this compound a hopeful candidate for new high performance permanent magnets.     

YTi(Fe1-xCox)11的磁性和穆斯堡尔谱的研究

YTi(Fe_1-xCo_x)₁₁在012型四方结构,居里温度随Co含量的增加而提高,本文为了揭示YTi(Fe_1-xCo_x)₁₁磁性与微观结构的联系,对这一系列化合物进行穆斯堡尔谱研究,在室温下,测量YTi(Fe_1-xCo_x)₁₁(其中x=0.0,0.2,0.4)的穆斯堡尔谱,最佳拟合结果证实在这种化合物中,Co原子优先占据j和f晶位,在所测样品中,超精细场在x=0.2处出现极值,这与YTi(Fe_1-xCo_x)₁₁饱和磁化强度测量结果相符合。并对YTi(Fe_1-xCo_x)₁₁,Y₂(Fe_1-xCo_x)₁₄和YTi(Fe_1-xCo_x)₁₁的穆斯堡尔谱的实验结果进行比较,分析在YTiFe₁₁中与Y₂Fe₁₄B中的3d电子能带结构的差异。 关键词：     

包钴铁氧体型γ-Fe2O3磁粉穆斯堡尔效应的研究

包钴铁氧体型,γ-Fe₂O₃磁粉(简记为CoFe-γ-Fe₂O₃)是针状γ-Fe₂O₃磁粉与Co⁺⁺和Fe⁺⁺溶液起反应,在每个针状颗粒上包覆了一层钴铁氧体固溶体。经此种方法处理后的γ-Fe₂O₃磁粉的矫顽力及其它磁特性有较大的提高。如矫顽力由原来415Oe增加到715Oe;剩磁和矫顽力随时间及温度变化小等。我们利用穆斯堡尔效应并配合其它研究手段进行了研究,认为:CoFe-γ-Fe₂O₃磁粉矫顽力的提高,主要是由于γ-Fe₂O₃磁粉表面包覆了一层钴铁氧体固溶体,γ-Fe₂O₃与钴铁氧体固溶体之间发生磁耦合作用之故。 关键词：