Effect of Pyrolysis Atmosphere on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Films Prepared by Sol-Gel Method

The effect of pyrolysis atmosphere is investigated for Bi3.25 La0.75 Ti3O12 （BLT） films prepared on Pt/TiO2/SiO2/p-Si（100substrates by sol-gel processes. The pyrolysis is carried out at 400℃ for 20 min under air or O2 atmosphere and the successive anneal is performed at 700℃ for 30min under O2 atmosphere. The pyrolysis under O2 is enough for complete removal of organic species, however after pyrolysis under air, carbon and hydrogen atomic species as organic fragment are partly remained in the film. This incomplete removal of organic fragments affects the grain growth and cause more defects in the film or between interfaces during the annealing for the crystallization of BLT film. The growth direction and grain size of the BLT film is revealed to affect ferroelectric properties. The remanent polarization PTfor the BLT films of pyrolysis in O2 and air are measured to be 18.85μC/cm^2 and 12.56μC/cm^2,respectively. The defects degrade the fatigue property dramatically for the film of pyrolysis in air. It can be concluded that the pyrolysis is an important procedure to control ferroeleetrie properties.     

Influences of annealing on structural and compositional properties of Al_2O_3 thin films grown on 4H–SiC by atomic layer deposition

Annealing effects on structural and compositional performances of Al_2O_3 thin films on 4H–Si C substrates are studied comprehensively. The Al_2O_3 films are grown by atomic layer deposition through using trimethylaluminum and H_2 O as precursors at 300?C, and annealed at various temperatures in ambient N_2 for 1 min. The Al_2O_3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750?C to 768?C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy(XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar.     

Influences of annealing temperature on properties of Fe~(2+):ZnSe thin films deposited by electron beam evaporation and their applications to Q-switched fiber laser

Fe~(2+):ZnSe thin films are prepared on sapphire substrate at room temperature by electron beam evaporation and then annealed in vacuum(about 1 × 10~(-4) Pa) at different temperatures. The influences of thermal annealing on the structural and optical properties of these films such as grain size and optical transmittance are investigated. The x-ray diffraction patterns show that the Fe~(2+):ZnSe thin film is preferred to be oriented along the(111) plane at different annealing temperatures.After the film is annealed, the full-width-at-half-maximum( FWHM) of the x-ray diffraction peak profile(111) of the film decreases and its crystal quality is improved. Scanning electron microscope images show that the films are more dense after being annealed. Finally, the sample is used as a saturable absorber in ZBLAN fiber laser. The annealed Fe~(2+):ZnSe thin films can be used to realize stable Q-switching modulation on ZBLAN fiber laser. The results demonstrate that the Fe~(2+):ZnSe thin film is a promising material for generating the high-power pulses of mid-infrared Q-switched fiber lasers.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film

BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.     

Study of Phase Transition Properties in Epitaxial Ferroelectric Film

Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green＇s function, we study the phase transition properties of the epitaxial ferroeleetric film with one substrate. A general recursive equation of the ferroelectric thin film with two n-layer materials is obtained, which enables us to study the phase transition properties for any number layers for epitaxial ferroelectric thin film. With the help of this equation, we analyze the effect of the exchange interaction and the transverse field in the phase diagram, the influence to the polarizations and Curie temperature numerically. The results show that epitaxial ferroelectric film are able to induce a strong increase or decrease of Curie temperature to different exchange interactions and transverse fields within the epitaxial film layers. The theoretical results are in reasonable accordance with experimental data of different ferroelectric thin film.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.     

Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films

The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si （100） substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700℃. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite （OZn）, interstitial oxygen （Oi）, interstitial zinc （Zni） and zinc vacancy （VZn^-）, which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.     

Dependence of Thermal Annealing on Transparent Conducting Properties of HoF_3-Doped ZnO Thin Films

A kind of n-type HoF_3-doped zinc oxide-based transparent conductive film has been developed by electron beam evaporation and studied under thermal annealing in air and vacuum at temperatures 100–500℃.Effective substitutional dopings of F to O and Ho to Zn are realized for the films with smooth surface morphology and average grain size of about 50 nm.The hall mobility,electron concentration,resistivity and work function for the asdeposited films are 47.89 cm~2/Vs,1.39×10~(20)cm~(-3),9.37×10~(-4)Ω·cm and 5.069 eV,respectively.In addition,the average transmittance in the visible region(400–700 nm)approximates to 87%.The HoF_3:ZnO films annealed in air and vacuum can retain good optoelectronic properties under 300℃,thereinto,more stable electrical properties can be found in the air-annealed films than in the vacuum-annealed films,which is assumed to be a result of improved nano-crystalline lattice quality.The optimized films for most parameters can be obtained at 200℃ for the air-annealing case and at room temperature for the vacuum annealing case.The advisable optoelectronic properties imply that HoF_3:ZnO can facilitate carrier injection and has promising applications in energy and light sources as transparent electrodes.     

Influences of grain size and microstructure on optical properties of microcrystalline diamond films

Microcrystalline diamond(MCD) films with different grain sizes ranging from 160 nm to 2200 nm are prepared by using a hot filament chemical vapor deposition(HFCVD) system, and the influences of grain size and structural features on optical properties are investigated. The results show that the film with grain size in a range of 160 nm–310 nm exhibits a higher refractive index in a range of(2.77–2.92). With grain size increasing to 620±300 nm, the refractive index shows a value between 2.39 and 2.47, approaching to that of natural diamond(2.37–2.55), and a lower extinction coefficient value between 0.08 and 0.77. When the grain size increases to 2200 nm, the value of refractive index increases to a value between 2.66 and 2.81, and the extinction coefficient increases to a value in a range of 0.22–1.28. Visible Raman spectroscopy measurements show that all samples have distinct diamond peaks located in a range of 1331 cm~(-1)–1333 cm~(-1),the content of diamond phase increases gradually as grain size increases, and the amount of trans-polyacetylene(TPA)content decreases. Meanwhile, the sp~2 carbon clusters content and its full-width-at-half-maximum(FWHM) value are significantly reduced in MCD film with a grain size of 620 nm, which is beneficial to the improvement of the optical properties of the films.     

Influence of Ambient Atmosphere on the Plasmon Resonance Absorption of Ag／SiOx（0≤x≤2） Nanocomposite Film

Nanocomposite films consisting of nanosized Ag particles embedded in partially oxidized amorphous Si-containing matrices were prepared by radio frequency magnetron co-sputtering deposition.We studied the influence of ambient atmosphere during the preparation and heat-treatment of Ag/SiOx(0≤x≤2) nanocomposite film on its optical absorption properties.We found that the plasmon resonance absorption peak shifts to shorter wavelengths with the increasing oxygen content in the SiOx matrix.The analysis indicates that the potential barrier between Ag nanoparticles and SiOx matrix increases with the increasing x value,which will induce the surface resonance state to shift to higher energy.The electrons in the vicinity of the Fermi level of Ag nanoparticles must absorb more energy to be transferred to the surface resonance state with the increasing x value.It was also found that the plasmon resonance absorption peaks of the samples annealed in different ambient atmospheres are located at about the same position.This is because the oxidation surface layer is dense enough to prevent the oxygen from peretration into the sample to oxidize the silicon in the inner layer.     

Preferential orientation of modified SrBi2Nb2O9 ferroelectric thin films prepared by pulsed laser deposition

We report on the deposition of SrBi₂Nb₂O₉ and Sr_1-xNa_xBi_2-xTe_xNb₂O₉ ferroelectric thin films on Pt/TiO₂/SiO₂/(100)Si substrates using the pulsed laser deposition technique. Deposition on substrates heated to 600-700 °C produces {11l} film texture and dense films with grain sizes up to about 500 nm. The recrystallization at 700 °C of amorphous films deposited at lower temperatures enhances the contribution of the {100} and {010} orientations. These films show smaller grain size, namely 50-100 nm. {11l}-oriented Sr_1-xNa_xBi_2-xTe_xNb₂O₉ films have remnant polarization P_rۆ 7C/cm², a coercive field E_c䏐 kV/cm and dielectric constant, )𪓴. The low value of P_r is probably related to the low fraction of grains with the ferroelectric axis in the direction of the applied field, E. The recrystallized films have more grains with the ferroelectric axis parallel to E; however, they have a low resistivity which so far has prevented electrical characterization.     

Influences of Bi2O3/V2O5 Additives on the Microstructure and Magnetic Properties of Lithium Ferrite

Lithium ferrite materials with different concentrations of Bi2O3 and V2O5 additives are prepared by the conventional ceramic technique. The x-ray diffraction analysis proves that the additives do not affect the final crystal phase of the lithium ferrite in our testing range. Both Bi2O3 and V2O5 additives could promote densification and lower sintering temperature of the lithium ferrite. The average grain size first increases, and then gradually decreases with the Bi2O3 content. The maximal grain size appears with 0.25 wt% Bi2O3. The average grain size first increases, and then is kept almost unchanged with the V2O5 content. The maximal average grain size of the samples with V2O5 additive is much smaller than that of the samples with Bi2O3 additive. Furthermore, the V2O5 additive more easily enters the crystal lattice of the lithium ferrite than the Bi2O3 additive. These characteristics evidently affect the magnetic properties, such as saturation flux density, ratio of remanence Br to saturation flux density Bs, and coercive force of the lithium ferrite. The mechanisms involved are discussed.     

Femtosecond Third-Order Optical Nonlinearity of Au：Bi203 Nanocomposite Films

Ultrafast third-order optical nonlinearities of the as-deposited and annealed Au：Bi2O3 nanocomposite films deposited by magnetron cosputtering are investigated by using femtosecond time-resolved optical Kerr effect （OKE） and pump probe techniques. The third-order optical nonlinear susceptibility is estimated to be 2.6Ф×10^- 10 esu and 1.8 × 10.9 esu at wavelength of 800nm, for the as-deposited and the annealed film, respectively. The OKE signal of the as-deposited film is nearly temporally symmetrical with a peak centred at zero delay time, which indicates the dominant contribution from intraband transition of conduction electrons. For the annealed film, the existence of a decay process in OKE signal implies the important contribution of hot electrons. These characteristics are in agreement with the hot electron dynamics observed in pump probe measurement.     

Structural and electrical properties of La0.5Sr0.5CoO3 films on SrTiO3 and porous a-Al2O3 substrates

Films of La_0.5Sr_0.5CoO₃ (LSCO) have been deposited on specially treated TiO₂-terminated (001) SrTiO₃ substrate surfaces and on macroporous polycrystalline !-Al₂O₃ substrates, having a mean pore diameter of 80 nm, by pulsed laser deposition. The films deposited on SrTiO₃ are good conducting, (001) textured, and exceptionally smooth (1-2 Å for 100 nm thick films). LSCO films deposited on porous !-Al₂O₃ are polycrystalline and exhibit good crystallographic and electrical properties despite the large substrate roughness and the differences in lattice parameters and crystal structure between the film and the substrate. Different growth modes have been observed on the porous !-Al₂O₃ substrates depending on the oxygen pressure during film deposition. Films grown at an oxygen pressure of 10^-1 mbar are macroporous, whereas films grown at 10^-2 mbar completely cover the substrate pores. In the latter case, strain effects lead to film cracking.     

退火气压对Bi3.25La0.75Ti3O12铁电薄膜的微观结构和铁电性能的影响

采用sol-gel法在Pt/TiO₂/SiO₂/p-Si(100)衬底上制备了Bi_3.25La_0.75Ti₃O₁₂(BLT)铁电薄膜,研究了在750 ℃时不同退火气压(p_{O2:10^-4—3 atm)对薄膜微观结构和电学性能的影响.XRD和拉曼光谱结果表明在10^-4和3 atm氧气压下退火 关键词： 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ 铁电性能 sol-gel法 正交化度     

Influence of oxygen pressure on structural and optical properties of Al2O3 optical waveguides prepared by pulsed laser deposition

Pure and europium doped alumina waveguides have been prepared by Pulsed Laser Deposition using a KrF excimer laser at oxygen pressures in the range from 10^-7 to 0.1 mbar. The composition of the films and the doping ion concentration were determined by Rutherford Backscattering Spectroscopy. From X-ray diffraction measurements, a progressive growth of %-Al₂O₃ crystallites is observed as the oxygen pressure decreases. After annealing treatment, the alumina films are constituted of !-Al₂O₃ crystallites while europium doped alumina films remain constituted of %-Al₂O₃ crystallites. The films have optical waveguiding properties. The mean refractive index of the film increases as oxygen pressure decreases.     

Low-temperature growth of Y2O3 thin films by ultraviolet-assisted pulsed laser deposition

Thin Y₂O₃ films have been grown on (100) Si using an in-situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. When compared to conventional pulsed laser deposited (PLD) films under similar conditions, the UVPLD-grown films exhibited better structural and optical properties, especially those grown at lower substrate temperatures, from 200 °C to 400 °C. X-ray diffraction investigations showed that the films grown were highly crystalline and textured. According to X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry investigations, UVPLD-grown Y₂O₃ films have a better overall stoichiometry and contain less physisorbed oxygen than the conventional PLD-grown films. The refractive index values, measured in the range 300-750 nm by using variable-angle spectroscopic ellipsometry, were similar to those of a reference Y₂O₃ film.     

A Spectroscopic Ellipsometry Study of TiO2 Thin Films Prepared by dc Reactive Magnetron Sputtering： Annealing Temperature Effect

TiO2 thin films are obtained by dc reactive magnetron sputtering. A target of titanium （99.995%） and a mixture of argon and oxygen gases are used to deposit TiO2 films on to silicon wafers （100）. The crystalline structure of deposited and annealed film are deduced by variable-angle spectroscopic ellipsometry （VASE） and supported by x-ray diffractometry. The optical properties of the films are examined by VASE. Measurements of ellipsometry are performed in the spectral range O. 72-3.55 e V at incident angle 75^o. Several SE models, categorized by physical and optical models, are proposed based on the ＇simpler better＇ rule and curve-fits, which are generated and compared to the experimental data using the regression analysis. It has been found that the triple-layer physical model together with the Cody-Lorentz dispersion model offer the most convincing result. The as-deposited films are found to be inhomogeneous and amorphous, whereas the annealed films present the phase transition to anatase and rutile structures. The refractive index of TiO2 thin films increases with annealing temperature. A more detailed analysis further reveals that thickness of the top sub-layer increases, whereas the region of the bottom amorphous sub-layer shrinks when the films are annealed at 300℃.     

Comparison of TiO2 and ZrO2 Films Deposited by Electron-Beam Evaporation and by Sol-Gel Process

TiO2 and ZrO2 films are deposited by electron-beam （EB） evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold （LIDT） test. It is found that the sol-gel films have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the film, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.     

Transport Behaviour of La0.8Sr0.2AlO3 Thin Film on Oxygen Deficient SrTiO3 Substrate

La_0.8Sr_0.2AlO₃ (LSAO) thin films are grown on SrTiO₃ (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that theLSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films.