ZnO亚微米和微米棒的晶体生长及发光性质

用硝酸锌Zn(NO3 )2·4H2O和六亚甲基四胺 (CH2 )6N4,通过化学溶液法在玻璃衬底上生长出ZnO六角形亚微米和微米棒(长 5~6μm,直径 0. 8 ~5μm)。生长时间达两天后,ZnO棒呈中空六角形微米管。测量了样品的X射线衍射(XRD)谱,扫描电镜像和喇曼光谱。ZnO微米棒的光致发光为橙红色宽谱带发射(峰值 630nm, 半峰全宽 250nm), 其激发光谱除带间本征激发(短于 370nm)外,还有很强的在导带底附近的室温激子激发峰(峰值 387nm,半峰全宽 30nm)。而阴极射线发光有两个发射峰,橙色宽谱带强峰 (峰值580nm,半峰全宽约为140nm)是缺陷发光峰,近紫外窄谱带弱峰(峰值 395nm,半峰全宽约为 20nm)是激子发光峰。     

直流磁控溅射生长(002)择优取向AlN薄膜及其光致发光

采用直流反应磁控溅射法,在玻璃衬底上生长了沿(002)择优取向的AlN薄膜,用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对AlN薄膜结构和表面形貌进行表征,并测量了AlN薄膜在405 nm激光激发下的光致发光(PL)光谱。结果表明,在不同氮气含量条件下生长的AlN薄膜均呈(002)择优取向,薄膜表面呈小颗粒密堆积排列,颗粒尺寸在20 nm左右。不同氮气含量条件下生长的AlN薄膜在550 nm处均有较强的由于V_(Al)能级向价带跃迁引起的缺陷能级发光峰;AlN薄膜在589,614,654 nm处也有较弱的缺陷能级发光峰,随着氮气含量增大,缺陷能级发光峰越来越明显,产生原因分别为O_N-O_N缺陷对向V_(Al)-2O_N产生的复合缺陷能级的跃迁、导带向与氧有关的杂质能级(I_O)间的跃迁以及V_(Al)-O_N深能级向价带的跃迁。     

C(膜)/Si(SiO2)(纳米微粒)/C(膜) 的光致发光性质研究

用直流辉光溅射法结合真空镀膜法制备出了一种“多层三明治结构”的光致发光材料—C(膜 ) /Si(SiO2 ) (纳米微粒 ) /C(膜 )夹层膜 ,然后分别在 40 0、6 5 0和 75 0℃退火 1h .在波长为 2 5 0nm的紫外光激发下 ,刚制备出来未经退火处理的样品具有一个在 398nm (3.12eV)处的紫光宽带PL1峰 .在 6 5 0℃退火后 ,又出现了一个在 36 0nm (3.44eV)附近的PL2 峰 .PL1和PL2 峰形状和峰位与退火温度和激发波长无关 ,但强度却与退火温度和激发波长密切相关 .结合形态结构分析可知 ,紫光PL1峰可用量子限制 -发光中心 (QC LCs)模型进行解释 :即光激发发生在SiO2 微粒内部 ,而光发射源于SiO2 与Si界面上的缺陷中心 .紫外荧光PL2 峰则源自SiC内部的电子 空穴复合发光     

铜掺杂氧化锌纳米棒的非线性光学响应竞争特性

利用飞秒脉冲激光激发Cu掺杂ZnO纳米棒,研究其特有的非线性光学性质和激发机制。在激发波长为750 nm的荧光光谱中,二次谐波峰非常弱,几乎可以忽略,存在非常强的激子发光峰和Cu掺杂导致缺陷发光峰。激发强度的增大会导致这两个发光峰强度呈非线性增大,激子发光峰位产生明显红移,而缺陷发光峰位没有变化。进一步增大激发强度,缺陷发光峰强度会出现饱和甚至有所下降,而激子发光峰强度持续增大。当激发波长增加到760 nm时,从样品的荧光光谱可以清楚地识别到二次谐波峰和激子发光峰以及缺陷发光峰并存。随着激发波长的进一步增加,二次谐波强度不断增大,而激子发光峰和缺陷发光峰的强度却随之下降。当激发波长为790 nm和800 nm时,未发现激子发光峰和缺陷发光峰,非线性光谱以二次谐波为主导。研究结果表明,通过选择合适的激发波长和激发强度,可以实现发光颜色的转变,使得Cu掺杂ZnO纳米棒在全光显示方面具有潜在的发展前景。     

氮化镓纳米粒子的制备及光致发光研究

采用直接氮化法制备出尺寸不同的GaN纳米粒子,分别利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）和光致发光（PL）谱测试手段对所制样品进行表征和发光特性的研究。结果表明：所制备的两种GaN纳米粒子直径分别为100 nm和300 nm左右。在GaN纳米粒子的PL谱中,中心在357 nm的发射源于本征发光,中心在385 nm的发射带源于浅施主能级到价带的辐射复合,中心在560 nm左右的发射带源于浅施主能级到深受主能级间的施主-受主对辐射发光。     

CVD两步法生长ZnO薄膜及其光致发光特性

用CVD两步法在常压下于p型Si(100)衬底上沉积出具有较好择优取向的多晶ZnO薄膜。在325nm波长的光激发下,室温下可观察到显著的紫外光发射(峰值波长381nm)。高温退火后氧空位缺陷浓度增加,出现了一个450~600nm的绿光发光带,发光峰值在510nm。作为比较,用一步法生长的ZnO薄膜结晶质量稍差。在其PL谱中不仅有峰值波长389nm的紫外发射而且还出现了一个很强的蓝光发光中心(峰值波长437nm),退火后同样产生绿光发光带。对这两种绿光发光带的发光机制进行了研究,认为前者源于VO,而后者与O_Zn有密切的关系。     

Si／SiNx／SiO2多层膜的光致发光

采用射频磁控溅射法,制备了具有强光致可见发光的纳米Si/SiNx/SiO2多层膜,利用傅立叶红外吸收(FTIR)谱,光致发光(PL)谱对其进行了研究。用260nm光激发得到的PL谱中观察到高强度的392nm(3.2eV)和670nm(1.9eV)光致发光峰,分析认为它们分别来自于缺陷态≡Si-到价带顶和从导带底到缺陷态≡Si-的辐射跃迁而产生的光致激发辐射复合发光。PL谱中只有370nm(3.4eV)处发光峰的峰位会受退火温度的影响,结合FTIR谱认为370nm发光与低价氧化物—SiOx(x<2.0)结合体有密不可分的关系。当SiO2层的厚度增大时,发光强度有所增强,800℃退火后出现最强发光,认为具有较大SiO2层厚度的Si/SiNx/SiO2结构多层膜更有利于退火后形成Si—N网络,能够得到更高效的光致发光。用量子限制-发光中心(QCLC)模型解释了可能的发光机制,并建立了发光的能隙态(EGS)模型。     

碳硅共掺杂p型AlN的光电性能研究

在SiC衬底上生长了碳硅共掺杂p型AlN晶体,通过X射线衍射、X射线光电子能谱(XPS)、光致发光(PL)光谱、霍尔测试对碳硅共掺杂p型AlN晶体的结构、光学及电学性能进行了综合研究。通过XPS测试分析(尤其是对样品中Si 2p和C 1s的XPS谱分析)发现,样品中C替代N成为受主,而Si替代Al成为施主。样品的PL谱主要包括两个特征发射峰,分别来自于C、Si在AlN中形成的复合物V N-C N和C N-Si Al。     

两步溶液法制备亚微米ZnO棒阵列及其退火后的发光

通过改变溶液浓度、酸碱度等生长条件,用两步化学溶液沉积法在玻璃衬底上制备出有序排列的亚微米级ZnO棒阵列,棒的截面呈正六边形,直径约为200~500nm。测量了样品的XRD谱和扫描电镜像,证明这些样品都是六方纤锌矿结构的ZnO单晶,且以[002]方向择优生长。将样品退火前后的PL光谱进行比较分析,发现退火后样品的发射光谱中紫外峰消失而长波段的红色发光峰红移并且增强(峰位由630nm左右移到720nm),而其激发光谱中的室温激子激发峰也增强。当退火时间增加到6h后,出现了由430nm的蓝峰和505nm绿峰组成的宽谱带蓝绿色发射。并对发光机理进行了讨论。     

弯曲表面上ZnO亚微米棒阵列的制备

以ZnS和金属Zn粉末混合物为蒸发源以及金属Zn片为衬底,利用热蒸发气相沉积方法,在弯曲的金属Zn微球表面上,成功地获得了ZnO亚微米棒阵列结构。场发射扫描电镜研究表明:在弯曲的Zn微球表面,能自组织地生长出大量的截面为六边形的ZnO亚微米棒,这些亚微米棒的平均直径为500nm,长约1μm。棒的顶部是平滑的。能量散射X射线谱结果表明:合成的产品只存在Zn和O两种元素,其成分比例接近1∶1。没有观察到S元素。光致发射(PL)光谱显示:在387nm紫外波长处,出现一个强的半峰全宽为16nm的窄发光峰,可归属于ZnO的近带边发光,而509nm左右较弱的宽峰则源于界面缺陷态发光。这些研究结果说明我们所合成的这种ZnO亚微米棒阵列材料在紫外受激发射器件方面有着潜在的应用价值。     

制备一维可控形貌的ZnO微米棒

用化学溶液法以醋酸锌和六亚甲基四胺为原料在玻璃衬底上生长出不同形貌的亚微米和微米ZnO棒。探讨了反应液的酸碱度和反应液浓度对生成的ZnO棒形貌的影响，并分析了其生长机制。通过控制一定的酸碱度和溶液浓度，可以得到规则的六角ZnO棒状阵列。这种规则的六角棒沿着[002]方向生长。测量了样品的XRD，扫描电镜像(SEM)，并对其发光性能进行了测量分析。其中规则六角ZnO棒的光致发光光谱中有一很强的峰值650nm红色宽谱带和一峰值约387nm的激子发光峰。激子发光峰加宽，实际上是自由激子的发光峰(380nm)和Zni的发光峰(430nm)的叠加。而红色发光峰可能是Vo2+中的电子和价带中的空穴辐射复合所致。     

水热法合成ZnS∶Au,Cu超细X射线发光粉

报道了水热法合成的高强度ZnS∶Au,Cu超细X射线发光粉及其光致发光(PL)和X射线激发发光(XEL)的光谱特性。200℃水热处理12h直接合成样品的纳米晶粒约15nm,尺寸分布窄,分散性好,具有纯立方相的类球形结构。氩气保护下1000℃焙烧1h后的样品存在一定的团聚,但团聚后尺寸为1～2μm,为超细X射线发光粉,此时样品为纯六角相的类球形为主的结构。所有样品的PL和XEL光谱均为宽带谱,水热法直接合成样品的XEL强度最强时,样品的Cu/Zn,Au/Cu比值分别为3×10-5和2。在此比值条件下,1000℃焙烧1h样品的XEL发光最强,此时其2个峰值分别位于445和513nm,且与未焙烧前相比强度增强了10倍左右。另外通过比较PL光谱与XEL光谱特性,讨论了PL和XEL光谱的发光机理和其不同的激发机制。     

Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence(PL) with the excitation wavelength as short as ～ 177 nm. Annealing experiments were carried out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200℃ to 1600℃. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties,a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL–ONcomplex in the AlN material.     

一步溶液法制备ZnO亚微米晶体棒及其发光性能

用硝酸锌(Zn(NO₃)₂·4H2O)或醋酸锌(Zn(CH₃COO)₂·2H2O)分别与六亚甲基四胺((CH₂)₆N₄)以等浓度0.005mol/L配制成两种反应溶液,通过化学溶液法在玻璃衬底上生长出ZnO六角型亚微米棒(长5~8μm,直径300~700nm)。测量了样品的XRD和扫描电镜像。经XRD分析,所得样品均为纤锌矿的ZnO六角型晶体。扫描电镜(SEM)像表明,生长时间为3h或5h时,样品为细长条的棒状结构,长径比超过10:1;生长48h后的ZnO亚微米棒的一端被腐蚀成一定深度的ZnO亚微米管。用负离子配位四面体生长模型分析了ZnO亚微米棒的生长机理。ZnO亚微米棒退火前后的光致发光谱表明,退火处理后的发射谱中的紫外峰消失,而红色发光峰红移并且增强(峰值由630nm左右移到710nm),同时它的激发光谱中的室温激子激发峰也增强。     

Characterization and optical property of ZnO nano-, submicro- and microrods synthesized by hydrothermal method on a large-scale

In the present paper, well-dispersed ZnO nano-, submicro- and microrods with hexagonal structure were synthesized by a simple low temperature hydrothermal process from zinc nitrate hexahydrate without using any additional surfactant, organic solvent or catalytic agent. The phase and structural analysis were carried out by X-ray diffraction (XRD), the morphological analysis was carried out by field emission scanning electron microscopy (FESEM) and the optical property was characterized by room-temperature photoluminescence (PL) spectroscopy. The results revealed the high crystal quality of ZnO powder with hexagonal (wurtzite-type) crystal structure and the formation of well-dispersed ZnO nano-, submicro- and microrods with diameters of about 50, 200 and 500 nm, and lengths of 300 nm, 1 μm and 2 μm, respectively, on a large-scale just using the different temperatures. Room-temperature PL spectrum from the ZnO nanorods reveals a strong UV emission peak at about 360 nm and no green emission band at ∼530 nm. The strong UV photoluminescence indicates the good crystallization quality of the ZnO nanorods. Room-temperature PL spectra from the ZnO submicro- and microrods reveal a weak UV emission peak at ∼400 nm and a very strong visible green emission at 530 nm, that is ascribed to the transition between V_oZn_i and valence band.     

玻璃中CdSeS纳米晶体的室温光致发光谱

对掺有过饱和的镉、硒和少量硫的玻璃在500～800℃分别退火4h,生长了不同尺寸的CdSe_1-xS_x纳米晶体。测量了纳米晶体的室温吸收光谱和光致发光(PL)光谱,550℃生长的样品在300～800nm的范围没有观察到吸收和发光峰,表明温度低于550℃玻璃中不能形成纳米晶体。生长温度在600～650℃,纳米晶体的PL光谱主要为两个宽的发光带,即带边激子发光带和通过表面态复合的发光带。随着生长温度的升高,带边复合发光的蓝移减小,通过表面态的发光逐渐消失,并出现了叠加于宽发光带上的一系列明显的弱发射峰。不同温度生长的样品中,叠加峰的能量相同。同一样品中叠加峰的能量不随激发光波长的变化而变化。     

Characterization of photoluminescence spectra from poly allyl diglycol carbonate (CR-39) upon excitation with the ultraviolet radiation of various wavelengths

The induced photoluminescence (PL) from the π-conjugated polymer poly allyl diglycol carbonate (PADC) (CR-39) upon excitation with the ultraviolet radiation of different wavelengths was investigated. The absorption and attenuation coefficients of PADC (CR-39) were recorded using a UV–visible spectrometer. It was found that the absorption and attenuation coefficients of the PADC (CR-39) exhibit a strong dependence on the wavelength of ultraviolet radiation. The PL spectra were measured with a Flormax-4 spectrofluorometer (Horiba). PADC (CR-39) samples were excited by ultraviolet radiation with wavelengths in the range from 260 to 420 nm and the corresponding PL emission bands were recorded. The obtained results show a strong correlation between the PL and the excitation wavelength of ultraviolet radiation. The position of the fluorescence emission band peak was red shifted starting from 300 nm, which was increased with the increase in the excitation wavelength. The PL yield and its band peak height were increased with the increase in the excitation wavelength till 290 nm, thereafter they decreased exponentially with the increase in the ultraviolet radiation wavelength. These new findings should be considered carefully during the use of the PADC (CR-39) in the scientific applications and in using PADC (CR-39) in eyeglasses.     

Influence of excitation light wavelength on the photoluminescence properties for ZnO films prepared by magnetron sputtering

Highly orientated polycrystalline ZnO films were deposited on sapphire, silicon and quartz substrates at room temperature by r.f. magnetron sputtering. Different photoluminescence (PL) spectra were observed when excited with different wavelength light. A UV emission peak (356 nm) and a blue peak (446 nm) were generated for the films on sapphire, silicon and quartz substrates, and only the 446 nm blue emission appeared for the films on glass substrates when the wavelength of the excitation light was 270 nm. With increasing the wavelength of the excitation light up to 300 and 320 nm, the UV emission disappeared for films on various substrates and the wavelength of the PL peaks increased up to 488 and 516 nm, respectively. When the wavelength of the excitation light increased to 398 nm, the PL spectrum becomes a wide band that is consistent with three emission peaks.