窄禁带稀磁半导体二维电子气的拍频振荡

通过对调制掺杂的n型Hg_0.82Cd_0.16Mn_0.02Te/Hg_0.3Cd_0.7Te第一类量子阱中磁性二维电子气磁阻拍频振荡的研究，发现温度、栅压的变化都会引起磁阻拍频节点位置的变化.从对拍频的分析中，可以将依赖于栅压的Rashba自旋-轨道分裂和依赖于温度的巨大塞曼分裂区分开来. 关键词： 磁性二维电子气 自旋分裂 sp-d交换相互作用 拍频     

HgMnTe磁性二维电子气自旋-轨道和交换相互作用研究

通过分析不同温度下HgMnTe磁性二维电子气Shubnikov-de Hass（SdH）振荡的拍频现象，研究了量子阱中电子自旋 轨道相互作用和spd交换相互作用.结果表明：（1）在零磁场下，电子的自旋 轨道相互作用导致电子发生零场自旋分裂；（2）在弱磁场下，电子的自旋-轨道相互作用占主导地位，并受Landau分裂和Zeeman分裂的影响，电子的自旋分裂随磁场增加而减小；（3）在高磁场下，电子的spd交换相互作用达到饱和，电子的自旋分裂主要表现为Zeeman分裂.实验证明了当电子的Zeeman分裂能量与零场 关键词： 磁性二维电子气 Zeeman分裂 Rashba自旋分裂     

赝形InGaAs/InAlAs渐变异质结中的零磁场自旋分裂

在赝形渐变InGaAs/In_0.52Al_0.48As异质结的二维电子气中,发现了自旋方向向上的电子和自旋向下的电子在零磁场下存在着自旋分裂.利用Shubnikov-de Haas振荡研究了异质结中的自旋分裂行为,通过振荡中的拍频现象,发现了零磁场下的自旋分裂量为8.76meV. 关键词：     

n-Hg0.80Mg0.20Te界面积累层中二维电子气的输运特性研究

通过变磁场霍耳测量研究了MBE生长的Hg_0.80Mg_0.20Te薄膜在15 —250K温度范围内的输运特性.采用迁移率谱(MS)和多载流子拟合过程(MCF)相结合的方法对 实验数据进行了分析,由该方法获得的结果和Shubnikov de Hass(SdH)振荡测量的结果都证 明材料中存在二维(2D)电子和三维(3D)电子.其中2D电子主要来自于Hg_1-xMgxTe-CdTe的界面积累层或Hg_1-x关键词： 变磁场霍耳测量 界面积累层 二维电子气 1-xMg_xTe')" href="#">Hg_1-xMg_xTe     

高x值混晶Hg1-xCdxTe光吸收边的压力效应

采用金刚石对顶砧高压装置,在0—36kbar流体静压力范围和室温条件下测量了高x值的P型碲镉汞混晶Hg_0.3Cd_0.7Te光吸收边及其随压力的变化。300K下Hg_0.3Cd_0.7Te光学能隙的实验值与用经验公式的计算值一致。用最小二乘法拟合不同压力下的实验结果,得到Hg_0.3Cd_0.7Te能隙的一阶压力系数α=8.7×10^-11eV/Pa,与用化学键介电 关键词：     

Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应

通过磁输运测量研究了Al_0.22Ga_0.78N/GaN二维电子气的电子相干散射中的弱局域和反弱局域化现象.在外加弱磁场的情况下，该系统表现出正-负磁阻的变化，说明在Al_0.22Ga_0.78N/GaN异质结中存在晶体场引起的电子自旋-轨道散射.同时讨论了二维电子气中不同的散射时间对温度的依赖关系，实验得到的非弹性散射时间与温度成反比，表明非弹性散射机理主要来源于小能量转移的电子-电子散射. 关键词： 二维电子气 弱局域 磁阻     

稀磁半导体Hg0.89Mn0.11Te磁化强度及磁化率的研究

利用MPMS-7(magnetic property measurement system)型超导量子磁强计对垂直布里奇曼法生长的Hg_0.89Mn_0.11Te晶片磁化强度变化规律进行了测量.试验采用了两种不同的外场和冷却条件.首先在5 K恒温下，-5200到5200 kA/m范围内改变磁场强度进行了测定.然后维持800 kA/m恒定磁场，分别在有场冷却和无场冷却条件下，从5到300 K范围内改变温度，研究了变温条件下的磁化特性.并采用分子场近似模型，用类布里渊函数，最小二乘法对磁化强度随磁场强度变化的实验结果进行拟合和分析，结果表明，Mn²⁺离子之间存在反铁磁相互作用.磁化率和温度关系分析表明：在测试范围内Hg_0.89Mn_0.11Te是单一的顺磁相，在高温区磁化率和温度服从居里-万斯定律，呈线性关系，低于40 K时，磁化率和温度的关系偏离居里-万斯定律，表现出顺磁增强现象. 关键词： 0.89Mn_0.11Te')" href="#">Hg_0.89Mn_0.11Te 磁化强度 磁化率 类布里渊函数     

Si调制掺杂AlGaN/GaN异质结磁阻拍频现象

在低温（15K—25K）和强磁场（0—10T）条件下，对二维电子气占据两个子带的Si调制掺杂AlGaN/GaN异质结构进行磁输运测量.在一定温度范围内观察到磁阻拍频现象.根据Sander等人和Raikh等人给出的磁阻振荡的具体表达式，拟合实验结果表明磁阻拍频是由第一子带S dH振荡和磁致子带间散射引起的磁阻振荡导致的. 关键词： AlGaN/GaN异质结构 SdH振荡 磁致子带间散射 磁阻拍频     

Zn0.04Cd0.96Te中深能级的红外光电导谱研究

应用红外光电导谱研究半绝缘p型Zn_0.04Cd_0.96Te中的深能级,在温度从4.2到165K范围内,观察到了位于0.24,0.34,0.38,0.47,0.55和0.80eV处6个光电导响应峰.结合4.2K下光致发光谱的测量结果以及对Zn_xCd_1-xTe中深能级发光光谱、深能级瞬态谱等已有的研究结果,对这些响应峰对应的深能级特性进行了讨论 关键词： xCd_1-xTe')" href="#">Zn_xCd_1-xTe 光电导 杂质 深能级     

分子束外延生长的n-Hg1-xCdxTe的磁输运特性

采用迁移率谱和多电子拟合过程相结合的混合电导分析法，对分子束外延（MBE）生长的Hg_1-xCd_xTe材料的变磁场实验数据进行了处理．该方法可以将外延层中体电子对电导的贡献与界面电子的贡献区分开，通过对不同温度下变磁场数据的分析，表明该方法是准确和可靠的，可以成为一种半导体材料和器件的常规电学测试和分析手段 关键词：     

Using the Hg_xMg_(1-x)Te ternary compound as a room temperature photodetector: The electronic structure,charge transport,and response function of the energetic electromagnetic radiation

In the present work, firstly, a first-principles study of the structural, electronic, and electron transport properties of the Hg_xMg_(1-x)Te(HMT) ternary compound is performed using the ABINIT package and the results are compared with Cd_(0.9)Zn_(0.1) Te(CZT) as a current room-temperature photodetector. Next, the response functions of Hg_(0.6)Mg_(0.4)Te and Cd_(0.9)Zn_(0.1)Te under electromagnetic irradiation with 0.05 Me V, 0.2 MeV, 0.661 MeV and 1.33 MeV energies are simulated by using the MCNP code. According to these simulations, the Hg_(0.6)Mg_(0.4)Te ternary compound is suggested as a good semiconductor photodetector for use at room temperature.     

非简并p型Hg1-xMnxTe单晶(x>0.17)的负磁电阻机理研究

研究磁性半导体中负磁电阻产生机理对正确理解载流子与磁性离子间的sp-d磁交换作用 是非常重要的.通过变温(10---300 K)磁输运和变温(5---300 K)磁化率实验研究了一系列不同Mn含量 非简并p型Hg_1-xMn_xTe单晶(x>0.17)的负磁电阻和顺磁增强效应. 实验结果表明其负磁电阻与温度的关系和磁化率与温度的关系基本一致, 两者都包含一个呈指数型变化的温度函数exp(-K/T).根据磁性半导体的杂质能级理论, 非简并p型Hg_1-xMn_xTe单晶在低磁场范围内出现负磁电阻效应的主要物理机理 为外磁场的磁化效应使得受主杂质或受主型束缚磁极化子的有效电离能减小.     

Phase equilibrium of Cd_(1-x)Zn_xS alloys studied by first-principles calculations and Monte Carlo simulations

The first-principles calculations based on density functional theory combined with cluster expansion techniques and Monte Carlo(MC) simulations were used to study the phase diagrams of both wurtzite(WZ) and zinc-blende(ZB)Cd_(1-x)Zn_xS alloys.All formation energies are positive for WZ and ZB Cd_(1-x)Zn_xS alloys,which means that the Cd_(1-x)Zn_xS alloys are unstable and have a tendency to phase separation.For WZ and ZB Cd_(1-x)Zn_xS alloys,the consolute temperatures are 655 K and 604 K,respectively,and they both have an asymmetric miscibility gap.We obtained the spatial distributions of Cd and Zn atoms in WZ and ZB Cd_(0.5)Zn_(0.5)S alloys at different temperatures by MC simulations.We found that both WZ and ZB phases of Cd_(0.5)Zn_(0.5)S alloy exhibit phase segregation of Cd and Zn atoms at low temperature,which is consistent with the phase diagrams.     

125Te NMR tomography of [Re6] cluster in Re6Te15 and related cluster compounds

The static and magic angle spinning NMR solid-state spectra of Re6Te15 and a series of Re(6)-Te cluster compounds demonstrate the positive and negative 125Te NMR chemical shifts indicating that the [Re6] cluster distorts strongly magnetic field at the neighboring Te sites. The local magnetic field is decreased at the facial tellurium sites (Teface) and enhanced at the apexial tellurium sites (Teapex). The facial and sagittal sections of the Re(6)-Te clusters were reconstructed from analysis of Teface and Teapex NMR spectra, respectively.     

Superconductivity at the Normal Metal/Dirac Semimetal Cd_3As_2 Interface

We investigate the interface between a three-dimensional Dirac semimetal Cd_3As_2 and a normal metal via softpoint contact spectroscopy measurement.The superconducting gap features were detected below 3.8 K and 7.1 K in the case of Cd_3As_2 single crystals sputter-coated with the Pt and Au films,respectively,in the differential conductance dI/dV-V plots of the point contacts.As the applied magnetic field increased,the drop in the zerobias contact resistance shifted toward lower temperatures.The topologically non-trivial band structure of Cd_3As_2 is considered to play a crucial role in inducing the superconductivity.Apart from realizing superconductivity in topological materials,our creative approach can be used to investigate possible topological superconductivity and exhibits a high application potential in electronic devices.     

Density functional studies on the ferromagnetic properties of (Zn,Cr)Te

We have investigated the electronic and magnetic properties of the room temperature ferromagnetic diluted magnetic semiconductor (DMS) (Zn,Cr)Te with density functional calculations. The electronic and magnetic properties of (Zn,Cr)Te are very similar with those of the typical DMS (Ga,Mn)As. The stronger ionicity of ZnTe plays a key role in the electronic and magnetic properties of (Zn,Cr)Te.     

Magnetic susceptibility study of Ce in PbCeA (A=Te,Se, S)

The magnetic susceptibility of Pb_1-xCe_xA (A=S, Se and Te) crystals with Ce³⁺ concentrations 0.006≤x≤0.036 was investigated in the temperature range from 2 K to 300 K. The magnetic susceptibility data was found to be consistent with a ²F_5/2 lowest manifold for Ce³⁺ ions with a crystal-field splitting Δ=E(Γ₈)−E(Γ₇) of about 340 K, 440 K and 540 K for Pb_1-xCe_xTe, Pb_1-xCe_xSe, and Pb_1-xCe_xS, respectively. For all the three compounds the doublet Γ₇ lies below the Γ₈ quadruplet which confirms the substitution of Pb²⁺ by Ce³⁺ ions in the host crystals. The observed values for the crystal-field splitting are in good agreement with the calculated ones based on the point-charge model. Moreover, the effective Landé factors were determined by X-band (∼9.5 GHz), electron paramagnetic measurements (EPR) to be g=1.333, 1.364, and 1.402 for Ce ions in PbA, A = S, Se and Te, respectively. The small difference with the predicted Landé factor g of 10/7 for the Γ₇ (J=5/2) ground state was attributed to crystal-field admixture.     

Evidence of anisotropic Landau level splitting in topological semimetal ZrSiS under high magnetic fields

Magneto-transport study has been performed in topological semimetal ZrSiS single crystals under high pulsed magnetic fields. Obvious dependence of Landau level splitting on temperature and angular was investigated. The strong three-dimensional anisotropic nature of Landau level splitting under high pulsed magnetic fields was revealed by the angular dependent measurements, in which the orbital contribution is more dominant than Zeeman splitting. Our studies provide more insights into the physical properties of topological semimetals ZrSiS and shed light on future spintronic applications of ZrSiS.