| Si调制掺杂AlGaN/GaN异质结磁阻拍频现象 |
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| 引用本文： | 姚炜,仇志军,桂永胜,郑泽伟,吕捷,唐宁,沈波,褚君浩.Si调制掺杂AlGaN/GaN异质结磁阻拍频现象[J].物理学报,2005,54(5):2247-2251. |
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| 作者姓名： | 姚炜 仇志军 桂永胜 郑泽伟 吕捷 唐宁 沈波 褚君浩 |
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| 作者单位： | (1)南京大学物理系，南京 210093; (2)中国科学院上海技术物理研究所红外物理国家重点实验室，上海 200083 |
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| 基金项目： | 国家重点基础研究发展规划项目(批准号:001CB309506-2)资助的课题. |
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| 摘 要： | 在低温（15K—25K）和强磁场（0—10T）条件下，对二维电子气占据两个子带的Si调制掺杂AlGaN/GaN异质结构进行磁输运测量.在一定温度范围内观察到磁阻拍频现象.根据Sander等人和Raikh等人给出的磁阻振荡的具体表达式，拟合实验结果表明磁阻拍频是由第一子带S dH振荡和磁致子带间散射引起的磁阻振荡导致的.
关键词：
AlGaN/GaN异质结构
SdH振荡
磁致子带间散射
磁阻拍频
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| 关 键 词： | AlGaN/GaN异质结构 SdH振荡 磁致子带间散射 磁阻拍频 |
| 文章编号： | 1000-3290/2005/54(05)2247-05 |
| 收稿时间： | 2004-07-12 |
Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure |
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| Yao Wei,Qiu Zhi-Jun,Gui Yong-Sheng,Zheng Ze-Wei,Lü Jie,Tang Ning,Shen Bo,Chu Jun-Hao.Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure[J].Acta Physica Sinica,2005,54(5):2247-2251. |
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| Authors: | Yao Wei Qiu Zhi-Jun Gui Yong-Sheng Zheng Ze-Wei Lü Jie Tang Ning Shen Bo Chu Jun-Hao |
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| Abstract: | Magneto-transport measurements have been carried out on a Si modulation-doped Al 0.22 Ga 0.78 N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband. |
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| Keywords: | AlGaN/GaN heterostructure SdH oscillator magneto-intersubband scattering beating patterns |
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