GaN(0001)表面电子结构和光学性质的第一性原理研究

采用基于第一性原理的密度泛函理论平面波超软赝势方法计算了(2×2)GaN(0001)清洁表面的能带结构、态密度、表面能、功函数和光学性质.发现弛豫后GaN(0001)表面的能带结构发生较大变化,表面呈现金属导电特性,导带底附近存在明显的表面态,在偶极矩的作用下表面电荷发生转移,Ga端面为正极性表面;计算获得了GaN(0001)表面的表面能和功函数分别为2.1J.m^-2和4.2eV;比较分析了GaN(0001)表面和体相GaN的光学性质,发现两者存在较大差异.     

氯原子在Cu(111)表面的吸附结构和电子态

密度泛函理论(DFT)总能计算研究了不同覆盖度下氯原子在Cu(111)表面的吸附结构和表面电子态。计算结果表明,清洁Cu(111)表面自由能 为15.72 ,表面功函数φ为4.753eV。在1/4ML和1/3ML覆盖度下,每个氯原子在Cu(111)表面fcc谷位的吸附能分别等于3.278eV/atom和3.284eV/atom。在1/2ML覆盖度下,两个紧邻氯原子分别吸附于fcc和hcp谷位,氯原子的平均吸附能为2.631eV/atom。在1/3ML覆盖度下,fcc和hcp两个位置每个氯原子吸附能的差值约为2meV/atom,与正入射X光驻波实验结合蒙特卡罗方法得到结果(<10meV/atom)基本一致。在1/4ML、1/3ML和1/2ML覆盖度下,吸附后Cu(111)表面的功函数依次为5.263eV、5.275eV和5.851eV。吸附原子和衬底价轨道杂化形成的局域表面电子态位于费米能级以下约1.2eV、3.6eV和4.5eV等处。吸附能和电子结构的计算结果表明,氯原子间的直接作用和表面铜原子紧邻氯原子数目是决定表面结构的两个重要因素。     

TiO2分子在GaN(0001)表面吸附的理论研究

采用基于密度泛函理论的平面波超软赝势法,计算了TiO₂分子在GaN(0001)表面的吸附成键过程、吸附能量和吸附位置. 计算结果表明不同初始位置的TiO₂分子吸附后,Ti在fcc或hcp位置,两个O原子分别与表面两个Ga原子成键,Ga-O化学键表现出共价键特征,化学结合能达到7.932-7.943eV,O-O连线与GaN[1120]方向平行,与实验观测(100)[001] TiO₂//(0001)[1120]GaN一致. 通过动力学过程计算分析,TiO₂分子吸附过程经历了物理吸附、化学吸附与稳定态形成的过程,稳定吸附结构和优化结果一致. 关键词： GaN(0001)表面 2分子')" href="#">TiO₂分子 密度泛函理论 吸附     

ZnO(0001)表面吸附B的电子结构和光学性质研究

采用基于密度泛函理论的总体能量平面波超软赝势方法,结合广义梯度近似,对清洁ZnO(0001)表面及B/ZnO(0001)吸附体系进行了几何结构优化,计算了B/ZnO(0001)吸附体系的吸附能、能带结构、电子态密度和光学性质.计算结果表明:B在ZnO(0001)表面最稳定的吸附位置是T₄位.吸附后B/ZnO(0001)吸附体系表面带隙有所减小,表面态的组成发生变化,n型导电特性有一定程度的减弱,同时,对紫外光的吸收能力显著增强. 关键词： ZnO(0001)表面 B吸附 电子结构 光学性质     

氧在Nb(110)表面吸附的第一性原理研究

通过第一性原理赝势平面波方法研究了氧在Nb(110)表面的吸附性质随覆盖度变化规律. O在Nb(110)表面最稳定吸附位是洞位,次稳定吸附位是长桥位. 在长桥位吸附时, O诱导Nb(110)表面功函数随覆盖度的增加而几乎线性增加;但当O在洞位吸附时, 与干净Nb表面相比, 覆盖度为0.75 ML和1.0 ML时功函数增加, 而覆盖度为0.25 ML和0.5 ML时功函数减小.通过对面平均电荷密度分布和偶极矩变化的讨论, 解释了由吸附导致功函数复杂变化的原因.通过对表面原子结构和态密度分析, 讨论了O在Nb表面吸附时引起表面原子结构变化以及O和Nb(110)表面原子的相互作用.     

温度对GaN(0001)表面生长吸附SrO、BaO和TiO_2影响的理论研究

采用基于第一性原理的从头计算分子动力学方法,模拟了300、400、500、600和700℃下SrO、BaO和TiO_2分子在GaN(0001)表面吸附的动力学过程,研究了温度对原子运动轨迹、吸附能、界面电荷分布、稳定吸附方位和扩散系数的影响.温度不同,O-Ga成键时间不同,SrO分子中的O原子与GaN基底成键的Ga原子不同; TiO_2分子中O原子与GaN表面Ga原子成键的顺序也不同.温度对SrO、BaO和TiO_2分子在GaN(0001)表面的最终吸附形态和吸附方位有显著的影响.温度对不同吸附体系吸附能的影响也不相同;小分子在GaN(0001)基片表面优先吸附的顺序依次为TiO_2、SrO和BaO分子.数据分析显示SrO和BaO分子的最优生长温度是600℃,TiO_2分子的最优生长温度是500℃.     

GaN表面极性的光电子衍射研究

利用x射线光电子衍射的极角扫描模式,采集了GaN（0001）表面由(1010)和(1120)晶面产生的光电子衍射实验曲线,并运用光电子衍射的前向聚焦效应确定了GaN(0001)表面是Ga在最外层的极性面.利用与能量有关的光电子衍射即角分辨光电发射精细结构谱技术并结合多重散射团簇模型计算对GaN(0001)表面的极化性质进行了研究,进一步证实了GaN表面是Ga在最外层的极性面. 关键词： GaN 表面极性 光电子衍射     

Be(0001)薄膜中的量子尺寸效应与吸附氢的第一性原理计算

通过基于密度泛函理论的第一性原理方法对铍自由表面的电子结构及表面原子氢的吸附能作了详细计算，给出Be(0001)薄膜的电子结构、表面能、电子功函数、层间弛豫等物理量随厚度变化关系，同时讨论了原子氢在Be(0001) 表面的吸附性质，给出了吸附能及局域电子态密度随铍薄膜层厚的变化关系，体现了铍薄膜的量子尺寸效应.     

O在Au(111)表面吸附的密度泛函理论研究

应用密度泛函理论，本文系统地研究了O在Au(111)表面上的吸附能、吸附结构、功函数、电子密度和投影态密度，给出了覆盖度从0.11ML到1.0ML的范围内，O的吸附特性随覆盖度变化的规律.研究发现O的稳定吸附位为3重面心立方(fcc)洞位，O在fcc洞位的吸附能对覆盖度比较敏感，其值随着覆盖度的增加而减小；O诱导Au(111)表面功函数的变化量与覆盖度成近线性关系，原因是Au表面电子向O偏移，形成表面偶极子；O—Au的相互作用形成成键态和反键态，且反键态都被占据，造成O—Au键很弱，O吸附能较小. 关键词： 表面吸附 Au(111)表面 密度泛函理论 电子特性     

硫在Fe(100)面吸附的第一性原理研究

基于密度泛函理论的第一性原理方法,在广义梯度近似下,计算了硫原子在Fe(100)面吸附的结构和电子性质,并计算了其分子轨道和吸附能.同时讨论了相关吸附性质与硫原子表面覆盖度(0.25-1.0ML)的关系.结果表明：硫原子吸附在H位最稳定,吸附能均随浓度的增加而单调增加;B位吸附的硫原子与Fe(100)表面的距离随浓度非单调变化,在0.5ML时达到最大,是由较高的局域电子云重叠产生的排斥作用所导致的;对比分析吸附前后硫和Fe的s及p电子的态密度,显示了硫化亚铁的生成.     

Comparative study of adsorption characteristics of Cs on the GaN(0001) and GaN(000) surfaces

The adsorption characteristics of Cs on GaN(0001) and GaN(000) surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations.The results show that the most stable position of the Cs adatom on the GaN(0001) surface is at the N-bridge site for 1/4 monolayer coverage.As the coverage of Cs atoms at the N-bridge site is increased,the adsorption energy reduces.As the Cs atoms achieve saturation,the adsorption is no longer stable when the coverage is 3/4 monolayer.The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer,and then rises with Cs atomic coverage.The most stable position of Cs adatoms on the GaN(000) surface is at H3 site for 1/4 monolayer coverage.As the Cs atomic coverage at H3 site is increased,the adsorption energy reduces,and the adsorption is still stable when the Cs adatom coverage is 1 monolayer.The work function reduces persistently,and does not rise with the increase of Cs coverage.     

Comparative study of adsorption characteristics of Cs on the GaN （0001） and GaN （0001） surfaces

The adsorption characteristics of Cs on GaN （0001） and GaN （0001） surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN （0001） surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN （000i） surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.     

Al2O3衬底无催化剂生长GaN纳米线及其光学性能

采用一种绿色的等离子增强化学气相沉积法,以Al2O3为衬底, Ga金属为镓源, N2为氮源,在不采用催化剂的情况下,成功制备获得了结晶质量良好的GaN纳米线.研究表明,生长温度可显著调控GaN纳米线的形貌,当反应温度为950℃时,生长出的GaN微米片为六边形;当反应温度为1000℃时,生长出了长度为10-20μm的超长GaN纳米线.随着反应时间增加, GaN纳米线的长度增加. GaN纳米线内部存在着压应力,应力大小为0.84 GPa.同时,也进一步讨论了GaN纳米线无催化剂生长机制. GaN纳米线光致发光结果显示, GaN纳米线缺陷较少,结晶质量良好,在360 nm处有一个较为尖锐的本征发光峰,可应用于紫外激光器等光电子器件.本研究结果将为新型光电器件低成本绿色制备提供一个可行的技术方案.     

Oscillations in the threshold photoemission spectra of GaN(0001) with submonolayer Cs coverages

It is found that Cs adsorption on the n-type GaN(0001) surface generates an unusual change in the electronic properties of the surface and the near-surface space-charge layer, which leads to the appearance of photoelectron emission upon excitation in the transparent region of GaN. It is established that the photoemission is due to the formation of quasimetallic states induced by Cs adsorption in the band-bending region near the surface. The behavior of the photoemission threshold upon excitation by s-polarized light is studied as a function of the Cs coverage. It is found that the minimum value of the threshold corresponds to ～1.4 eV at a concentration of Cs atoms of ～4.5×10¹⁴ atom/cm² in the submonolayer coverage. A new effect is revealed, namely, the appearance of oscillations in the spectral curves of threshold photoemission. A model is proposed for photocurrent oscillations that takes into account the formation of quasimetallic states in the near-surface layer of GaN band bending and the occurrence of interference in the GaN slab upon light irradiation in the transparent region.     

Influence of Pb adatom on adsorption of oxygen molecules on Pb(111) surface: a first-principles study

Using first-principles calculations, we systematically study the influence of Pb adatom on the adsorption and the dissociation of oxygen molecules on Pb(111) surface, to explore the effect of a point defect on the oxidation of the Pb(111) surface. We find that when an oxygen molecule is adsorbed near an adatom on the Pb surface, the molecule will be dissociated without any obvious barriers, and the dissociated O atoms bond with both the adatom and the surface Pb atoms. The adsorption energy in this situation is much larger than that on a clean Pb surface. Besides, for an adsorbed oxygen molecule on a clean Pb surface, a diffusing Pb adatom can also change its adsorption state and enlarge the adsorption energy for O, but it does not make the oxygen molecule dissociated. And in this situation, there is a molecule-like PbO2 cluster formed on the Pb surface.     

Growth behavior of GaN film along non-polar [1 1 -2 0] directions

We studied the atomic assembly mechanisms of non-polar GaN films by the molecular dynamics method as a function of the N:Ga flux ratio at a fixed adatom energy on non-polar planes. Our study revealed that high quality crystal growth occurred only when off-lattice atoms (which are usually associated with amorphous embryos or defect complexes) formed during deposition were able to move to unoccupied lattice sites by thermally activated diffusion processes, which attests to the experimental difficulties in obtaining smooth surfaces due to dense stacking faults lying in non-polar GaN. Furthermore, surface structures on different planes played an important role. We further suggested favorable conditions for growing high quality GaN films and nano-structures along non-polar directions.     

Optoelectronic properties of two-dimensional GaN adsorbed with H,N and O: A first-principle study

In this paper, we have investigated optoelectronic properties of two-dimensional GaN adsorbed with non-metal atoms: H, N and O based on first-principle. We find that adsorption of H, N and O atom on 2D GaN is achieved by chemisorption, and the most stable adsorption site is at the top of N atom. Band structure of 2D GaN after adsorbing H atom moves to low energy region and two-dimensional GaN is transformed into an n-type semiconductor. After adsorption of N atom, a new impurity energy appears at the Fermi level, and N adatom could induce magnetism into 2D GaN. Static dielectric constants of 2D GaN increase and adsorption spectrums have extend to infrared band when adsorbing H and N. Strong reflection peaks and strong adsorption peaks after adsorption are located at deep ultraviolet range, which is beneficial for optoelectronic application in the deep ultraviolet. Specifically, two-dimensional GaN adsorbed with H atom is more conducive to manufacture of nano-optoelectronic devices.     

单层GaSe表面Fe原子吸附体系电子自旋性质调控

Ⅲ族金属单硫化物因其优越的光电和自旋电子特性而备受关注,实现对其自旋性质的有效调控是发展器件应用的关键.本文采用密度泛函理论系统地研究了GaSe表面Fe原子吸附体系的几何构型及自旋电子特性.Fe/GaSe体系中Fe吸附原子与最近邻Ga,Se原子存在较强的轨道耦合效应,使体系呈现100%自旋极化的半金属性.其自旋极化贡献主要来源于Fe-3d电子的转移及Fe-3d,Se-4p和Ga-4p轨道杂化效应.对于Fe双原子吸附体系,两Fe原子之间的自旋局域导致原本从Fe转移至GaSe的自旋极化电荷量减少,从而费米能级附近的单自旋通道转变为双自旋通道,费米能级处的自旋极化率转变为0.研究结果揭示了Fe_n/GaSe吸附体系自旋极化特性的形成和转变机制,可为未来二维自旋纳米器件的设计与构建提供参考.