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GaN表面极性的光电子衍射研究
引用本文:徐彭寿,邓锐,潘海斌,徐法强,谢长坤,李拥华,刘凤琴,易布拉欣·奎热西.GaN表面极性的光电子衍射研究[J].物理学报,2004,53(4):1171-1176.
作者姓名:徐彭寿  邓锐  潘海斌  徐法强  谢长坤  李拥华  刘凤琴  易布拉欣·奎热西
作者单位:(1)中国科学技术大学国家同步辐射实验室,合肥 230029; (2)中国科学院高能物理研究所同步辐射中心,北京 100039
基金项目:中国科学院知识创新工程资助的课题.
摘    要:利用x射线光电子衍射的极角扫描模式,采集了GaN(0001)表面由(1010)和(1120)晶面产生的光电子衍射实验曲线,并运用光电子衍射的前向聚焦效应确定了GaN(0001)表面是Ga在最外层的极性面.利用与能量有关的光电子衍射即角分辨光电发射精细结构谱技术并结合多重散射团簇模型计算对GaN(0001)表面的极化性质进行了研究,进一步证实了GaN表面是Ga在最外层的极性面. 关键词: GaN 表面极性 光电子衍射

关 键 词:GaN  表面极性  光电子衍射
收稿时间:2003-05-26

Photoelectron diffraction study on the polarity of GaN surface
Xu Peng-Shou,Deng Rui,Pan Hai-Bin,Xu Fa-Qiang,Xie Chang-Kun,Li Yong-Hu,Liu Feng-Qin and K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface[J].Acta Physica Sinica,2004,53(4):1171-1176.
Authors:Xu Peng-Shou  Deng Rui  Pan Hai-Bin  Xu Fa-Qiang  Xie Chang-Kun  Li Yong-Hu  Liu Feng-Qin and K Yibulaxin
Abstract:We have obtained the photoelectron diffraction curves from (1010) and (1120) crystal planes on GaN(0001) surface by using a polar scan mode of x-ray photoelectron diffraction (XPD). On the basis of principle of “forward focusing" of XPD, we have determined that its polarity is Ga termination. The polarity of GaN(0001) surface is also studied by using energy dependence photoelectron diffraction called angle-resolved photoemission extended fine structure, as well as the calculation of multiple scattering cluster models, which confirmed that its polarity is Ga termination.
Keywords:GaN  surface polarity  photoelectron diffraction
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