α-Al2O3:C晶体的热释光和光释光特性

以高纯α-Al₂O₃和石墨为原料,采用温梯法生长了α-Al₂O₃：C晶体,使用Ris TL/OSL-DA-15型热释光和光释光仪研究了其热释光和光释光特性.α-Al₂O₃：C晶体在462K附近有单一热释光峰,发射波长位于410nm.随着辐照剂量的增加,热释光强度逐渐增强,462K的热释光特征峰位置保持不变.α-Al₂O₃：C晶体的 关键词： 2O₃：C')" href="#">α-Al₂O₃：C 热释光 光释光     

α-Al2O3单晶的热释光和光释光特性

研究了纯α-Al₂O₃单晶的热释光发光曲线和三维发光谱，以及光释光衰变曲线，对它们的发光机理和剂量学特性进行了分析和讨论.实验观察到α-Al₂O₃单晶β射线照射后立即测量的热释光发光曲线，有峰温为76℃和207℃两个发光峰.经γ射线照射数小时后测量的三维发光谱，只有峰温207℃波长为416 nm发光峰，它与α-Al₂O₃:C晶体的发光波长基本相同，是受热激发到导带的电子与F< 关键词： 2O₃')" href="#">α-Al₂O₃ 三维发光谱 TL/OSL剂量响应     

不同退火温度的Al_2O_3:C薄膜热释光和光释光性能

α-Al_2O_3:C晶体的热释光和光释光性能优越,但其制备要求高,需高温和高还原气氛.与α-Al_2O_3:C晶体性能接近的α-Al_2O_3:C陶瓷,热释光峰不单一.本文采用两次阳极氧化法在0.5 mol/L的草酸溶液中5℃恒温制备高度均匀有序的多孔Al_2O_3:C薄膜,主要研究不同退火温度对其热释光和光释光特性的影响.结果表明,经不同温度退火后的Al_2O_3:C薄膜均为非晶结构;不同退火温度的Al_2O_3:C薄膜热释光的主发光峰约在310℃左右,符合通用级动力学模型.600℃退火后的Al_2O_3:C薄膜热释光灵敏度最强,其热释光剂量曲线在1-10 Gy范围内具有很好的线性响应,在剂量10-120 Gy范围内出现超线性响应;在相同的辐照剂量下,随着退火温度的升高(≤600℃)光释光的初始发光强度逐渐增强.不同退火温度的Al_2O_3:C薄膜光释光衰减曲线都呈典型的指数衰减且快衰减速率相比α-Al_2O_3:C晶体显著加快.600℃退火后的Al_2O_3:C薄膜光释光灵敏度最强,其光释光剂量响应曲线在1-200 Gy整体上都具有很好的剂量线性关系.与热释光相比,Al_2O_3:C薄膜的光释光具有更宽的线性剂量响应范围.此研究为Al_2O_3:C薄膜作为光释光辐射剂量材料做出了有益的探索.     

蓝光激发的Y2.93Al5O12∶0.07Ce3+黄色荧光粉的制备及光致发光

以Al₂(SO₄)₃·18H₂O、尿素为原料,采用水热-热解法制备了球形α-Al₂O₃粉体。以自制α-Al₂O₃、Y₂O₃及CeO₂为原料,固相法制备了白光LED用Y_2.93Al₅O₁₂∶0.07Ce3+黄色荧光粉,通过X射线衍射（XRD）、扫描电镜（SEM）、X射线能谱（EDS）及荧光光谱（PL）等对产物的物相、形貌及光致发光性能进行了表征。结果表明：水热-热解法制备出了物相纯净、分散性良好的球形α-Al₂O₃粉体,以该α-Al₂O₃为原料,合成出可被460 nm蓝光有效激发,发射光谱为峰值在550 nm宽带的Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉,色坐标为（0.453,0.531 9）,采用GSAS软件对Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉的XRD图进行了Rietveld结构精修,精修图与XRD测试图完全吻合,Y,Al,Ce,O四元素均匀地分布在黄色荧光粉产物中,Y_2.93Al₅O₁₂∶0.07Ce3+黄色荧光粉的激发光谱由两个部分组成,在340和460 nm处有两个非常明显的吸收峰,Ce3+的4f能级由于自旋-耦合而劈裂为两个光谱支项2F_7/2和2F_5/2,其中2F_5/2为基谱项。340 nm的激发峰对应于2F_5/2→5D_5/2的跃迁,460 nm的激发峰属于2F_7/2→5D_3/2的跃迁,并且460 nm处的激发强度强于340 nm处激发强度。以460 nm为监测波长得到的发射光谱,最强发射峰位于550 nm,Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉是一种适用于白光LED的高性能黄色荧光粉。     

乙醇对纳米多孔氧化铝薄膜热释光的影响

以乙醇-草酸混合溶液为电解液,用二次阳极氧化法制备纳米多孔Al_2O_3∶C薄膜。在制备过程中,碳的掺杂浓度可控。实验结果表明,随着碳浓度的增加,热释光强度逐渐增大;随着退火温度的升高,320℃左右的主热释光峰的强度先升高后降低。在退火温度为500℃时,主热释光峰的强度达到最大。纯草酸溶液制备的Al_2O_3薄膜的热释光剂量响应曲线在10~50 Gy是线性的,在50~100 Gy呈超线性;而乙醇-草酸混合溶液制备的Al_2O_3∶C薄膜在10~100 Gy基本呈线性。     

分散第二相γ-Al2O3对β-Li2SO4离子导电性的影响

本文研究了分散第二相γ-Al₂O₃对β-Li₂SO₄离子导电性的影响。β-Li₂SO₄(γ-Al₂O₃)的电导率随γ-Al₂O₃含量的增加而提高,到γ-Al₂O₃为50mol％时达到极大。当温度为253℃时,β-Li₂SO< 关键词：     

低维黑磷的合成及其抗氧化研究

二维黑磷（2D-BP）和黑磷量子点（BP-QDs）等低维黑磷材料在结构和光电性能方面表现出巨大的潜在应用价值,但其仍面临着合成不可控和抗氧化性差等问题。通过引入微波法实现了低维黑磷的简便、低成本合成;研究了微波退火温度和退火时间对低维黑磷结构、形貌和光致发光性能的影响;通过原子层沉积法在BP-QDs样品表面沉积氧化铝（Al₂O₃）保护层,研究了Al₂O₃薄膜厚度对BP-QDs抗氧化性的影响。结果表明：随着微波退火温度的增加,量子点尺寸逐渐减小,光致发光发射峰出现蓝移,这说明反应温度会影响材料的尺寸,进而影响其带隙和光致发光特性;当微波退火时间持续增加时,黑磷纳米片被逐渐剥离并形成BP-QDs;当微波退火温度和时间分别为250℃和4 h时,BP-QDs分布均匀且尺寸更小;随着Al₂O₃膜厚的增加,保护性能越来越好;当Al₂O₃薄膜厚度为20 nm时,BP-QDs在空气中的抗氧化性最佳。     

含碳Na-β(β")-Al2O3的导电性能

本文研究了含碳(1—10)wt％的Na-β(β″)-Al₂O₃,指出含碳6wt％以下仍是良好的快离子导体,而且由于混入了碳,离子电导率比纯的Na-β(β″)-Al₂O₃提高一到两个数量级。样品的体电阻,晶界电阻,双电层电容及其漏电阻等参量都随含碳量的不同而变化。文中详细地讨论了碳的影响。在-40℃到80℃温度范围测量了纯样品与含碳样品的电导温度特性,指出含碳的Na-β(β″)-Al₂O₃是做双电层电容器的良好材料。 关键词：     

用于α-Al2O3分子动力学模拟的长程Finnis-Sinclair势函数

用金属势函数描述氧化物是实现金属-氧化物界面分子动力学模拟的关键.基于此,通过拟合α-Al₂O₃的晶格能、晶格常数、弹性常数,获得了一套用于描述α-Al₂O₃的长程Finnis-Sinclair（F-S）势.通过与已报道的描述α-Al₂O₃的EAM势、Glue势和modified Matsui（m-Matsui）势的比较,结果达到或优于前人的结果.进而,在300 K的温度下对 关键词： 长程F-S势 2O₃')" href="#">α-Al₂O₃ 2O₃界面')" href="#">Fe-Al₂O₃界面 2O₃界面')" href="#">Al-Al₂O₃界面     

Ti和蓝宝石的界面反应

在超高真空中用电子束蒸发在抛光的(1102)取向的蓝宝石(α-Al₂O₃)衬底上蒸镀500nm的Ti膜,在恒温炉中退火,然后用XRD(包括一般的和小角度的X射线衍射),AES(俄歇电子谱,包括深度剖面分布和通过界面的谱形分析)和SIMS(二次离子质谱)等表面分析技术详细研究了从室温至850℃,Ti与α-Al₂O₃的固相界面反应.结果表明室温及300℃,30min退火已有反应,Al₂O_{3< 关键词：}     

不同粒径α-Al2O3:C晶态粉体热释光和光释光特性

本文探讨了α -Al₂O₃:C晶态粉体的辐照剂量效应, 使用RisøTL/OSL-DA-15 型热释光和光释光仪研究其热释光和光释光特性, 结果发现, 相同粒径的α-Al₂O₃:C晶态粉体具有单一热释光峰, 且随着辐照剂量的增加热释光强度不断增加, 但热释光峰位置保持不变, 符合一级动力学模型; 而在相同的辐照剂量和测试条件下, 随着α -Al₂O₃:C晶态粉体粒径的减小, 其热释光强度先增强后减弱, 热释光峰却逐渐增加至趋于稳定, 表明粒度为40—60 μ的α -Al₂O₃:C晶态粉体具有最佳的热释光效应. 同时α -Al₂O₃:C晶态粉体的光释光特性的研究发现, 其光释光曲线具有典型的指数衰减特征, 粒径对其光释光强度和衰减速率的影响符合浅电子陷阱能级理论.     

石墨烯在Al_2O_3(0001)表面生长的模拟研究

基于密度泛函理论的广义梯度近似法,对用化学气相沉积法在蓝宝石(α-Al_2O_3)(0001)表面上生长石墨烯进行理论研究.研究结果表明:CH_4在α-Al_2O_3(0001)表面上的分解是吸热过程,由CH_4完全分解出C需要较高能量及反应能垒,这些因素不利于C在衬底表面的存在.在α-Al_2O_3(0001)表面,石墨烯形核的活跃因子并不是通常认为的C原子,而是CH基团.通过CH基团在α-Al_2O_3(0001)表面上的迁移聚集首先形成能量较低的(CH)_x结构.模拟研究(CH)_x对揭示后续石墨烯的形核生长机理具有重要意义.     

Dy或Tb掺杂的MgB4O7磷光体的热释光特性

用高温固相反应法研制了MgB₄O₇:Dy和MgB₄O₇:Tb两种热释光材料.用自制的三维热释光谱仪测量了两种磷光体的三维发光谱,从MgB₄O₇:Dy磷光体的三维发光谱观察到:1.热释光发光峰峰温为220,380℃;2.Dy³⁺离子的发光波长为480,575,660nm;3.220,380℃发光峰的相对强度随高温固相反应温度的升高而变化,但发光峰温和波长基本保持不变.由MgB₄O₇:Tb磷光体的三维发光谱可看到在230,340,420℃附近有三个发光峰,发光谱线波长分别为489,543,589,620nm.不同的高温烧结温度不仅对发光峰的发光强度有很大影响,而且还对Tb³⁺发光谱形产生影响,当温度高于850℃时Tb³⁺离子发光谱线开始变成了发光谱带.此外,对比MgB₄O₇:Dy和MgB₄O₇:Tb两种热释光材料的二、三维发光谱,得出了掺入三价稀土离子的热释光材料的发光峰峰温主要由基质材料决定,发光波长则取决于稀土离子的4f电子能级间的跃迁.     

Characteristics of TL and PTTL glow curves of gamma irradiated pure Li2B4O7 single crystals

The TL glow curve of X-ray irradiated pure and Cu-doped Li₂B₄O₇ shows that the most intense TL peak is at 160°C. In the present work the characteristics of the TL and PTTL glow curves from gamma irradiated pure Li₂B₄O₇ single crystal samples (prepared by Mitui Kinzoku Kougyo, Japan) have been studied. The samples were irradiated with different gamma doses (from 0.5 up to 500 Gy) using a ⁶⁰Co gamma ray source at a dose rate of 78 Gy h⁻¹. The TL glow curve shows three intense peaks (at 160°C, 260 and 305°C) and three weak ones (at 110, 140 and 220°C). The most intense TL peak is at 160°C, which agrees with the TL glow curve from X-ray irradiated samples [Kutomi Y. and Tomita A. (1990) TSEE and TL of Li₂B₄O₇:Cu single crystals. Radiat. Prot. Dosim. 33, 347–350]. The 305°C peak in gamma irradiated samples also appears to be very intense, which indicates its possible use in high-dose high-temperature dosimetry. Further, the characteristics of the PTTL glow curve have been studied as a function of ultraviolet exposure and number of repeated PTTL cycles.     

Thermoluminescence of natural and synthetic diopside

Diopside, a natural silicate mineral of formula CaMgSi₂O₆, has been investigated concerning its thermoluminescence (TL) and electron paramagnetic resonance (EPR) properties. Glow curves and TL vs. γ-dose were obtained irradiating natural samples to additional dose varying from 50 to 10,000 Gy. Except for a 410 °C peak found in the Al-doped artificial diopside, all the other peaks grow linearly with radiation dose, but saturate beyond 1 kGy. To investigate high-temperature effect before irradiation, measurements of TL intensity in samples annealed at 500–900 °C and then irradiated to 1 kGy γ-dose were carried out. Also the TL emission spectrum has been obtained. To compare with natural diopside, a synthetic pure polycrystal was produced and further those doped with iron, aluminum and manganese were also produced.     

Radioluminescence (RL) behaviour of Al2O3:C-potential for dosimetric applications

The radioluminescence (RL) of carbon doped aluminium oxide (Al₂O₃:C) TL dosimeter material (TLD-500) was investigated using a ¹³⁷Cs conversion electron source (which also emits β and γ) for simultaneous irradiation and luminescence excitation. Furthermore, RL dosimetry characteristics of this material were studied. The main RL emission occurs at 420 nm. That matches the known main TL and OSL emissions for this material as well as an emission that was investigated in earlier RL studies, excited at higher energies (4 MeV electrons) and very high pulse delivered doses (≈800 kGy·s⁻¹). Furthermore, the saturation dose for the main peak is reached at the dose level of ≈80 Gy as known from TL and earlier RL investigations. Other peaks at 700 and 790 nm and broad emission bands at photon energies higher than 3.00 eV and others between 2.00 and 2.50 eV were observed. The 700 nm emission shows growth also at higher dose levels, and saturates at an estimated dose of ≈800 Gy. The 790 nm emission reaches its maximum intensity at ≈10 Gy absorbed dose. The reported results give an outlook to the usability and the potential of Al₂O₃:C combined with RL measurements for radiation dosimetry as well as for beta source calibration, using radioluminescence.     

Eu,Dy共掺杂SrAl2O4长余辉材料制备新工艺

活化Al-Sr合金粉末水解制备SrAl₂O₄长余辉材料的前驱体,并采用高温固相反应法制备出Eu,Dy共掺杂的SrAl₂O₄长余辉材料,对其微观结构和发光特性进行了研究。实验结果表明:前驱体中Al、Sr元素在微观状态下分布均匀,所制成的长余辉发光材料的发射主峰位于520nm附近,为典型的Eu²⁺离子4f5d-4f的特征发射,初始亮度达到18cd/m²,余辉时间长达46h。     

Interactions between vacancies and prismatic Σ3 grain boundary in α-Al_2O_3:First principles study

Interactions between vacancies and Σ3 prismatic screw-rotation grain boundary in α-Al_2O_3 are investigated by the first principles projector-augmented wave method.It turns out that the vacancy formation energy decreases with reducing the distance between vacancy and grain boundary(GB) plane and reaches the minimum on the GB plane(at the atomic layer next to the GB) for an O(Al) vacancy.The O vacancy located on the GB plane can attract other vacancies nearby to form an O–O di-vacancy while the Al vacancy cannot.Moreover,the O–O di-vacancy can further attract other O vacancies to form a zigzag O vacancy chain on the GB plane,which may have an influence on the diffusion behavior of small atoms such as H and He along the GB plane of α-Al_2O_3.