非晶硒合金膜载流子特性研究

在X射线医学成象和无损检测方面,非晶硒现在被认为是最有前途的探测材料之一,其我流子特性对应用至关重要。本文描述了非晶硒(掺砷)合金材料的制备和合金膜的真空蒸镀制备方法,并用滚越时间方法测量了载流于的漂移迁移率和寿命。讨论了一些对非晶硒合金膜性能有重要影响的因素。实验表明,制备方法对非晶硒合金膜的性能有显着影响。可以看到,在低电场下被陷讲捕获的我流子形成的空间电荷对测量我流永寿命和对光的敏感度有很大影响.实验得到了良好的结果,在10v/μm场强下,空穴迁移长度约1500μm,电子迁移长度约1200μm.该结果表明,可以用几百微米厚的非晶硒合金膜作为X射线探测或成象的光电导接受器。     

用于X射线成像的非晶硒合金膜的制备和性能测试

在X射线诊断成像方面，非晶硒（a-Se)是最有前途的探测材料之一，通过实验研究了a-Se合金膜的制备方法，用飞行时间方法测量了载流子的漂移迁移率和寿命，讨论了对a-Se合金膜性能有重要影响的因子，通过对400μm厚a-Se合金膜X射线光电流的测量，确定了a-Se合金膜对X射线的光电响应特性。实验表明，a-Se合金膜具有线性的光电转换特性；灵敏度与场强有关。在10V／μm场强下，对于医疗诊断常用的轫致辐射X射线谱，用X射线在a-Se合金膜中产生一电子－－空穴对约需45eV的能量。     

X射线与非晶硒作用中的散射光子重吸收研究

本文对光电吸收占优的条件下,X射线与非晶硒作用中产生的散射光子重吸收作了较为详细的研究.结果显示,有相当一部分散射光子被非晶硒重吸收;随着入射光子能量的升高和非晶硒膜层厚度的加大,因散射重吸收而增加的能量吸收与初级作用中能量吸收的比值增大.这表明对于能量较高的入射X射线光子和厚的非晶硒膜层,散射重吸收将对X射线成象过程产生一定的影响.     

自支撑CsI/PC膜及其X射线光电转换性能研究

为了获得大面积自支撑的高效率X射线光电转换材料,通过化学气相沉积和热蒸发镀膜工艺,制备出了大面积自支撑的CsI/PC膜,其中PC(聚碳酸酯)膜厚度为300nm,CsI膜厚度在100nm到1μm。通过扫描电镜、X射线衍射仪研究了镀膜速度和受潮对样品表面形貌结构的影响。利用MANSON光源的X射线对不同沉积速率和受潮程度的样品的X射线转换效率进行了研究。在北京同步辐射装置标定了样品X射线光电转换效率,其响应灵敏度峰值大于3000μA/W;将样品作为X射线光电阴极应用在X射线条纹相机上,在神光Ⅲ主机平台上获得了清晰的X射线图像。     

用蒙特卡罗方法模拟直接转换X射线探测器的响应特性

采用Monte Carlo方法模拟了HgI₂、非晶Se和CdTe几种直接X射线转换探测器在医用X射线范围(10—100keV)的透过谱、背向散射谱、吸收效率和光电灵敏度. 对X射线和HgI₂的作用过程模拟采用了EGSnrc Monte Carlo代码系统, 对信号电荷的产生考虑了电荷产生的高斯噪声和材料深陷阱作用造成的部分电荷收集影响. 结果表明, 载流子平均自由程(Schubweg)在相对于探测材料厚度较小时, 陷阱作用能很大地影响探测灵敏度. HgI₂的灵敏度是非晶Se的5倍以上, CdTe的灵敏度是非晶Se的10倍以上, 采用高Z序数材料可以大大提高探测灵敏度.     

45°内反射镜高功率InGaAs/AlGaAs/GaAs面发射半导体激光器结构设计和制备

研究了具有45°内反射镜的0 98μm辐射波长的应变InGaAs/AlGaAs/GaAs单量子阱面发射半导体激光器结构,并采用MBE方法进行了材料制备。同时利用X射线双晶衍射,低温(10K)光致发光(PL)和电化学C V方法检测和分析了外延薄膜的光电和结构特性。在光致发光谱线中我们得到了发射波长0 919μm的谱峰,谱峰范围跨跃0 911～0 932μm,双晶回摆曲线、电化学C V分布曲线显示所设计的结构基本得到实现。     

高密度外延电阻淬灭硅光电倍增器研究

针对表面淬灭电阻技术引起死区面积较大,以及高光子探测效率与大动态范围不能同时满足的矛盾,应用外延电阻淬灭技术,采用与雪崩光电二极管微单元相连的衬底外延层硅材料制作了淬灭电阻.研制成功的外延电阻淬灭硅光电倍增器的有源区面积为1×1mm~2,微单元尺寸为7μm,微单元密度高达21 488个/mm~2,测试结果表明:漏电流为10量级,反向击穿电压为24.5V,过偏压为2.5V时,增益达1.4×10~5,室温下暗计数率约为600kHz/mm~2,串话率低于10%,说明该器件具有良好的光子计数特性.该高密度硅光电倍增器测量的动态范围是1.8×10~4个/mm,光子探测效率为16%(@λ_(peak)=480nm),恢复时间为8.5ns,单光子分辨能力较高,并且在液氮温度环境能够探测光子,这对于拓展硅光电倍增器在极低温度条件下的应用,比如暗物质测量实验方面具有潜力.     

NEA GaAs光电阴极激活工艺研究

本文报道了 GaAs 反射式光电阴极的激活工艺过程和结果.通过实验确定了 GaAs表面的热清洁温度,利用钼丝热辐射加热方法达到了比较理想的清洁效果,采用铯分子源和高纯氧作氧源获得了高于1000μA/1m 的激活积分灵敏度.     

ZnO半导体电导型X射线探测器件研究

本文制备了基于ZnO纳米线阵列和ZnO薄膜的Ag-ZnO-Ag电导型X射线探测器件,研究了它们对X射线的响应特性.薄膜器件在100 V偏置时的响应度达到0.12μC/Gy,纳米线阵列器件在50 V偏压下的响应度达到0.17μC/Gy.器件工作机理研究表明,器件的响应过程与表面氧吸附与解吸附效应有关,氧气吸附与解吸附过程使得X射线辐照下的载流子寿命大幅度增加,从而使得器件对X射线具有较高的响应度.本文研究结果表明ZnO薄膜和纳米线阵列器件在X射线剂量测量领域具有应用前景.     

红外InGaAsP光电阴极研究

本文主要对阈值波长可达1.25μm的InGaAsP光电阴极进行了详细的研究。在国内首次实现了在0.5μm～1.25μm波段范围内具有光电响应的半导体光电阴极。用Cs和O₂激活后得到的光电阴极在1.06μm处的反射式光电灵敏度为3.4mA/W,量子效率为0.4%。本文还对激活表面及热清洁工艺进行了系统地分析,确定出了最佳的表面清洁温度及时间。     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Novel high-voltage power device based on self-adaptive interface charge

This paper presents a novel high-voltage lateral double diffused metal--oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (E_I) and increase breakdown voltage (BV). The BV and E_I of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on E_I are defined and analysed.     

A new analytical model of high voltage silicon on insulator （SOI） thin film devices

A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1μm which is much larger than the normal value of about 30V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (V_B,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.     

Enhanced field emission and patterned emitter device fabrication of metal-tetracyanoquinodimethane nanowires array

Ag(TCNQ) and Cu(TCNQ) nanowires were synthesized via vapor-transport reaction method at a low temperature of 100 °C. Field emission properties of the as-obtained nanowires on ITO glass substrates were studied. The turn-on electric fields of Ag(TCNQ) and Cu(TCNQ) nanowires were 9.7 and 7.6 V/μm (with emission current of 10 μA/cm²), respectively. The turn-on electric fields of Ag(TCNQ) and Cu(TCNQ) nanowires decreased to 6 and 2.2 V/μm, and the emission current densities increased by two orders at a field of 8 V/μm with a homogeneous-like metal (e.g. Cu for Cu(TCNQ)) buffer layer to the substrate. The improved field emission is due to the better conduct in the nanowires/substrate interface and higher internal conductance of the nanowires. The patterned field emission cathode was then fabricated by localized growing M-TCNQ nanowires onto mask-deposited metal film buffer layer. The emission luminance was measured to be 810 cd/m² at a field of 8.5 V/μm.     

Improving the field-emission properties of carbon nanotubes by magnetically controlled nickel-electroplating treatment

A novel magnetically controlled Ni-plating method has been developed to improve the field-emission properties of carbon nanotubes (CNTs). The effect of the magnetic field and Ni-electroplating on CNT field-emission properties was investigated, and the results are demonstrated using scanning electron microscopy, J-E and the duration test. After treatment, the turn-on electric field declines from 1.55 to 0.91 V/μm at an emission current density of 100 μA/cm², and the emission current density increases from 0.011 to 0.34 mA/cm² at an electric field of 1.0 V/μm. Both the brightness and uniformity of the CNT emission performance are improved after treatment.     

A-188 V 7.2Ω·mm~2,P-channel high voltage device formed on an epitaxy-SIMOX substrate

This paper proposes a new n +-charge island (NCI) P-channel lateral double diffused metal-oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate.Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n +-regions on the interface of a buried oxide layer,and therefore the electric field of a dielectric buried layer (E I) is enhanced by these holes effectively,leading to an improved breakdown voltage (BV).The V B and E I of the NCI P-channel LDMOS increase to-188 V and 502.3 V/μm from 75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer,respectively.The influences of structure parameters on the proposed device characteristics are investigated by simulation.Moreover,compared with the conventional device,the proposed device exhibits low special on-resistance.     

Photorefractive polymer composites for the IR region based on carbon nanotubes

The photorefractive properties of polymer composites based on aromatic polyimide and single-wall carbon nanotubes are studied using radiation at a wavelength of 1064 nm. It is found that the nanotubes possess photoelectric sensitivity in this spectral region and that the kinetic photorefractive characteristics of the polymer composites are entirely determined by the photogeneration and charge transport characteristics of the layers. The two-beam gain coefficient of the signal beam measured for a composite consisting of aromatic polyimide and 0.25 wt % of single-wall carbon nanotubes in a constant electric field E₀ = 79 V/μm is equal to 84 cm^?1 and exceeds the optical absorption coefficient by 59 cm^?1. The refractive index modulation is equal to Δn = 0.004 at E₀ = 54 V/μm.     

ZnO纳米棒的低温溶液法制备、光电特性研究及其在有机/无机复合电致发光中的应用

利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm²时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm²,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移. 关键词： ZnO纳米棒 场发射 水热法 有机/无机复合电致发光