基于探针光调制的皮秒分辨X-ray探测方法与实验

高能密度物理研究中涉及许多单次皮秒现象的诊断测量, 然而对单次X-ray脉冲形状、X-ray与激光脉冲的皮秒精度同步依然是极具挑战的课题. 传统行波选通分幅相机受电子渡越时间限制, 难以突破40 ps时间分辨极限. 本文围绕半导体中光学探针光的全光调制效应, 提出一种以低温GaAs材料为基础, 实现皮秒时间分辨X-ray探测的新方法, 详细阐述了该探测器的工作机理、器件参数设计和时间分辨能力. 通过飞秒激光打靶实验, 验证了其概念设计的正确性. 结果表明该探测器具有约1.5 ps时间响应和10 ps时间分辨能力, 通过材料优化可将时间分辨提升 至1 ps以内.     

GENERATION OF MULTI-WAVELENGTH VISIBLE LIGHT IN Er3+-DOPED AND Er3+/Yb3+-DOPED SINGLE-MODE OPTICAL FIBER PUMPED AT 1313 nm

We report the generation of multi-wavelength visible light through amplified spontaneous emission (ASE) in Er³⁺-doped and Er³⁺/Yb³⁺-doped germanosilicate single-mode optical fiber pumped by a Nd:YLF laser at 1313nm. In the Er³⁺-doped fiber, the intense multi-wavelength blue emission hnes around 463-510nm corre-spond to transitions born ²G_7/2 etc. excited states to the metastable ⁴I_13/2 state, and their pumping mechanists is aecomphshed by a stepwise four-photon absorption. Some emission hnes in this wavelength region are attributed to the three-wave sum-frequency process of 1313 and 1530nm (corresponds to ⁴I_13/2 -⁴I_15/2). The intense green emission hnes at 525 and 540 nm are also observed in the Er³⁺-doped fiber. In the Er³⁺/Yb³⁺-doped fiber the blue and green lines are very weak compared with those in the Er³⁺-doped fiber.     

X射线皮秒分幅相机技术的初步研究

本文介绍了我们正在研究的x射线皮秒分幅相机技术的最新理论和实验研究结果。我们提出了一种新的实现皮秒分幅的技术方案。设计了适合于本方案的新型变象管。用直流X射线源测得该管的静态空间分辨举为201p/mm,并得到了四幅准静态分幅象。用激光打靶产生的脉冲x射线初步测量了脉冲静态和动态空间分辨率,拍摄到了单幅动态照片。     

红外InGaAsP光电阴极研究

本文主要对阈值波长可达1.25μm的InGaAsP光电阴极进行了详细的研究。在国内首次实现了在0.5μm～1.25μm波段范围内具有光电响应的半导体光电阴极。用Cs和O₂激活后得到的光电阴极在1.06μm处的反射式光电灵敏度为3.4mA/W,量子效率为0.4%。本文还对激活表面及热清洁工艺进行了系统地分析,确定出了最佳的表面清洁温度及时间。     

GENERATION OF MULTI-WAVELENGTH VISIBLE LIGHT IN Er3+-DOPED AND Er3+/Yb3+-DOPED SINGLE-MODE OPTICAL FIBER PUMPED AT 1313 nm

We report the generation of multi-wavelength visible light through amplified spontaneous emission (ASE) in Er³⁺-doped and Er³⁺/Yb³⁺-doped germanosilicate single-mode optical fiber pumped by a Nd:YLF laser at 1313nm. In the Er³⁺-doped fiber, the intense multi-wavelength blue emission hnes around 463-510nm corre-spond to transitions born ²G_7/2 etc. excited states to the metastable ⁴I_13/2 state, and their pumping mechanists is aecomphshed by a stepwise four-photon absorption. Some emission hnes in this wavelength region are attributed to the three-wave sum-frequency process of 1313 and 1530nm (corresponds to ⁴I_13/2 -⁴I_15/2). The intense green emission hnes at 525 and 540 nm are also observed in the Er³⁺-doped fiber. In the Er³⁺/Yb³⁺-doped fiber the blue and green lines are very weak compared with those in the Er³⁺-doped fiber.     

X射线皮秒条纹相机时间分辨率测试

本文从X射线皮秒条纹变象管的工作原理入手,分析了影响X射线条纹相机时间分辨率的因素,就我所研制的X射线条纹相机的时间分辩率进行了测量。条纹相机中应用全雪崩晶体管高速扫描线路。它具有抖动小、延时小寿命长的特点。X射线皮秒脉冲是用激光打靶的方法产生。为了得到窄的X射线脉冲,用非共振环型腔YAG激光器作为激     

啁啾脉冲激光放大的数值分析

 从Maxwell波动方程出发,建立了描述脉冲在啁啾放大系统中传播的非线性薛定谔方程;采用数值计算,系统地分析研究了放大过程中的各种效应对脉冲的影响,给出了啁啾脉冲在频域、时域内及放大压缩后脉冲信噪比的动态演化特征;讨论了展宽器附加色散量在放大过程中的影响。     

一种发红光的电子陷获型红外上转换材料的制备

本文研制的电子陷获（ＥＴ）型红外上转换材料是在改进传统工艺的基础上，使用硫化助熔法，在石英反应管中，基质合成和掺杂一次完成，具有工艺简单、生长周期短、重复性好的优点。由于反应在密闭系统中完成，安全可靠，对实验室环境保护好，用这种方法制备出的红外上转换材料，在室温下用紫外光或可见光激励后，用红外激发时发红光，并测得了其激发光谱（红外）和发射光谱（红光）。     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。