内敏乳剂的正电子湮没研究

研究了内核乳剂化学增感时间以及铑盐掺杂对内敏乳剂正电子湮没的影响，随着内核乳剂化学增感时间的增加，内部感光度上升到一最大值，然后又下降，正电子湮没的平均寿命也随增感时间的上升而达到最大值，然后下降，正电子湮没的中间寿命随增感时间的上升变化不大，但其所占比份先下降后上升，当颗粒内部掺入铑盐量增大时，正电子湮没的中间寿命所占比份上升，这些结果表明，卤化银颗粒内部的空穴浓度和银离子空位浓度与乳剂制备要求     

Fe掺杂的LaBa2Cu3O7的晶体微结构

本文应用Ｒｉｅｔｖｅｌｄ精修方法对高浓度Ｆｅ掺杂的ＬａＢａ２Ｃｕ３Ｏｄ（ＬＢＣＯ）超导体的Ｘ射线衍射谱进行了仔细的分析，得到了各掺杂样品的品格参数和原子结构参数，结果表明，Ｆｅ掺杂诱导了ＬＢＣＯ晶格的结构相变，随着Ｆｅ浓度的增加，出现了从正交到四方再到正交的结构震荡。     

掺镁YFeO3固溶体的电导和气敏性能研究

用化学共沉淀法制备了复合氧化物ＹＦｅＯ３镁掺杂固溶体Ｙ１－ＭｇｘＦｅＯ３气敏半导体材料,并对其相组成、电导和气敏性能进行了研究。结果表明：Ｍｇ＾２＋在ＹＦｅＯ３的Ａ位固溶范围为０≤ｘ≤０．８;电导测量显示,该Ｐ型固溶材料电导突变较纯相ＹＦｅＯ３低１００℃以上;９００℃以下灼烧４ｈ所得的Ｙ０．９４Ｍｇ０．０６ＦｅＯ３粉料制作的元件在２５７℃时对乙醇灵敏度最高,对４．５μｍｏｌ／Ｌ乙醇的灵敏度高达４４     

m线法研究掺杂LiNbO_3晶体波导基片的光损伤

采用ｍ线法研究了掺杂ＬｉＮｂＯ３晶体波导基片的光损伤，发现抗光损伤能力依次为Ｍｇ：ＬｉＮｂＯ３、ＬｉＮｂＯ３、Ｆｅ：ＬｉＮｂＯ３（氧化），Ｆｅ：ＬｉＮｂＯ３（还原）。对于同样材料，质子交换光波导的抗光损伤能力高于钛扩散光波导。     

La—Ce—Mn系钙钛矿型催化剂性能研究

采用共沉淀法制得了Ｃｅ＾４＋，部分取代Ｌａ＾３＋的Ｌａ１－ｘＣｅｘＭｎＯ３钙钛矿型催化剂，实验结果表明，随Ｃｅ＾４＋取代量ｘ的增大，Ｌａ１－ｘＣｅｘＭｎＯ３催化剂越易被还原，其还原活化逐渐降低，对于ＣＯ，ＣＨ４氧化的反应其活性有一最大值，ＣＯ反应ｘ的０．４，ＣＨ４反应ｘ为０．２，这是由于随ｘ值的增大，催化剂晶格缺陷增多，晶格氧的化学势增大，以及ＣｅＯ２杂质相的协同作用的结果，在ＣＯ氧化和用Ｈ２还原     

Nd_(1-x)Ba_xMnO_3和La_(0.67)Mg_(0.33)Mn_(0.85)M_(0.15)O_3(M=Mn,Ga,Fe)中Mn位自旋磁矩对电导性的影响

研究了Ｎｄ１－ｘＢａｘＭｎＯ３和Ｌａ０．６７Ｍｇ０．３３Ｍｎ０．８５Ｍ０．１５Ｏ３（Ｍ＝Ｍｎ，Ｇａ，Ｆｅ）的导电性，发现Ｍｎ位的自旋磁矩排列状态和大小对体系的导电性有强烈的影响．在Ｎｄ１－ｘＢａｘＭｎＯ３中，当Ｍｎ３＋／Ｍｎ４＋的浓度比值为２∶１，１∶１，１∶２时，电阻率出现半导体－金属转变．推论该类体系的导电性首先由体系中Ｍｎ３＋和Ｍｎ４＋自旋磁矩形成的磁结构状态决定，然后才取决于由Ｂａ掺杂浓度所决定的载流子浓度．在Ｌａ０．６７Ｍｇ０．３３Ｍｎ０．８５Ｍ０．１５Ｏ３（Ｍ＝Ｍｎ，Ｇａ，Ｆｅ）中，Ｍｎ位自旋磁矩大小的改变对导电性有强烈的影响，另外发现该类体系均以变程跳跃模式进行导电．     

+3价离子掺杂钨酸铅晶体发光性能和微观缺陷的研究

通过透射光谱、x射线激发发射光谱（XSL）的测试，研究了Bridgman法生长的几种不同+3价离子掺杂钨酸铅晶体的发光性能，并利用正电子湮没寿命谱（PAT）和x光电子能谱（XPS）的实验手段，对不同钨酸铅晶体的微观缺陷进行研究.实验表明，不同的+3价离子掺杂，对钨酸铅晶体发光性能的改善不同，并使得晶体中正电子俘获中心和低价氧的浓度发生不同变化.其中掺镧晶体的正电子俘获中心和低价氧浓度均上升，而掺钇和掺铋晶体的正电子俘获中心和低价氧浓度均下降，掺锑晶体则出现了正电子俘获中心浓度上升、低价氧浓度下降的情况.提 关键词： 钨酸铅晶体 +3价离子掺杂 正电子湮没寿命谱 x光电子能谱     

钠米材料Fe＿2O＿3微结构的正电子寿命谱学研究

用Ｘ射线衍射确定了纳米材料Ｆｅ＿２Ｏ＿３的平均粒径。测量了正电子的寿命。给出了平均粒径随退火温度的变化和短寿命成分τ＿１、中等寿命成分τ＿２以及它们的强度比Ｉ＿２／Ｉ＿１随平均粒径的变化。讨论了纳米材料Ｆｅ＿２Ｏ＿３的界面结构、平均正电子寿命τ与多普勒展宽谱Ｓ参效间的对应关系。     

Zn∶Fe∶LiNbO_3晶体四波混频效应的研究

报道了一种新掺杂铌酸锂晶体Ｚｎ∶Ｆｅ∶ＬｉＮｂＯ３，它具有优良的光折变四波混频性能，位相共轭反射率可达１００％。且与Ｆｅ∶ＬｉＮｂＯ３相比，抗光散射能力强，响应速度快。本文通过对高掺ＺｎＯ后晶体的抗光损伤能力和光电导值的测试分析，讨论了Ｚｎ∶Ｆｅ∶ＬｉＮｂＯ３晶体抗光散射和响应速度提高的机理。     

利用正电子湮没技术研究钾掺杂钨合金中的缺陷

钨合金中钾的掺杂会引入大量的缺陷,如尺寸几十纳米的钾泡、高密度的位错以及微米量级的晶粒带来的晶界等,这些缺陷的浓度和分布直接影响合金的服役性能.本文运用正电子湮没谱学方法研究钾掺杂钨合金中的缺陷信息,首先模拟计算了合金中各种缺陷的正电子湮没寿命,发现钾的嵌入对空位团、位错、晶界等缺陷的寿命影响很小;然后测量了不同钾含量掺杂钨合金样品的正电子湮没寿命谱,建立三态捕获模型,发现样品中有高的位错密度和低的空位团簇浓度,验证了钾对位错的钉扎作用,阐述了在钾泡形成初期是钾元素与空位团簇结合并逐渐长大的过程;最后使用慢正电子多普勒展宽谱技术表征了样品中缺陷随深度的均匀分布和大量存在,通过扩散长度的比较肯定了钾泡、晶界等缺陷的存在.     

Nb2O5掺杂对提高钨酸铅晶体发光性能的微观研究

通过透射谱、X射线激发发射谱(XSL)的测试，研究了布里奇曼(Bridgman)法生长的掺铌钨酸铅晶体的发光性能，并利用正电子湮没寿命谱(PAT)和X射线光电子能谱(XPS)的实验手段，对其微观缺陷进行了深入研究。结果表明，铌掺杂能够有效地改善钨酸铅晶体的350nm吸收带，提高钨酸铅晶体的发光快成分比例，并使得晶体中的正电子捕获中心浓度上升，低价氧浓度上升。提出掺铌钨酸铅晶体中Nb^5 将占据W^6 格位并使得晶体内部分(WO4)^2-根团成为(NbO3 Vo)^-，由此可改善钨酸铅的发光性能。     

Effect of doping and thermal vacancies on positron annihilation in semiconductors

The effect of lattice defects on positron annihilation in semiconductors was studied. In silicon, any detectable doping effect could not be found. In germanium, the thermal equilibrium measurements of annihilation lineshapes showed no vacancy effect. From these experimental facts, the interaction of positrons with lattice defects was discussed.     

Effect of doping on positron annihilation in GaAs

The effect of doping on positron annihilation was studied in GaAs single crystals. The positron lifetimes in Si- and Ge-doped crystals (n-type) are similar to that in an instrinsic crystal. On the other hand, the lifetimes in Zn-, Cd-, Cr- and Mn-doped crystals (p-type) are shorter than that in an intrinsic one. The difference is small but significant.     

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping.     

Free-volume changes at nanoscale in doped polyacrylic acid studied by positron annihilation spectroscopy

Polyacrylic acid (PAA) doped with carbon black (CB), chromium oxide (Cr₂O₃) and cupferron with different wt% (0.25%, 0.50%, 0.75%, and 1%) was studied using positron annihilation lifetime (PAL) technique and Doppler broadening of annihilation radiation (DBAR). Ortho-positronium lifetime components (τ₃ and I₃) were used to estimate the nanoscale free-volume hole sizes (V_f) and its fractions (f). It was found that the hole size V_f and its fractions f as well as S-parameters decreased at high value of doping concentration due to dopants-polymer formation. These results are supported by a significant narrowing in the nanoscale free-volume hole size distributions.

The correlation between positron annihilation parameters and electric conductivity are discussed.     

The role of quenched‐in vacancies for the decomposition of aluminium alloys

The very early stages of decomposition during room temperature storage, i.e. just a few minutes after quenching, are investigated by positron annihilation lifetime spectroscopy for both an AlMgSi alloy and an AlCuMg alloy. It turns out that by freezing the decomposition kinetics during measurements we can detect vacancy–solute atom pairs. The formation of larger solute clusters with structural vacancies is seen by an increase of the mean positron lifetime in the course of storage at room temperature (RT). Earlier findings concerning aging at RT were unable to discover this effect. The detected changes are interpreted in terms of cluster formation. Thus we show that positron annihilation spectroscopy (PAS) is one of the very few methods to access early stages of decomposition in metallic alloys. Moreover, the lower limit of the concentration of quenched‐in vacancy‐like defects is calculated to be at least 2 × 10^–5 per atom. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spin-orbit quenching of positronium during atomic collisions

When positrons are injected into a gas, 75% of the positronium (Ps) is likely to be formed as long-lived ortho-Ps. The main decay mechanisms for the ortho-Ps have been assumed to be natural decay of ortho-Ps and pickoff annihilation of the positron during Ps-atom collisions. A third possibility for annihilation is ortho-Ps-->para-Ps conversion due to the spin-orbit interaction between the atom and colliding Ps. This extra quenching mechanism may explain a number of phenomena observed in the annihilation spectrum of Kr and Xe, including the very small Ps fraction of 3% seen for Xe.     

SMMA/SMA共聚物共混物的自由体积的热动态特性与相分离行为的PALS研究

基于自由体积理论，利用正电子湮灭寿命谱仪(PALS)分别研究在不同升温速率条件下，聚苯乙烯-甲基丙烯酸甲酯共聚物(SMMA)和聚苯乙烯-马来酸酐共聚物(SMA)混合物(30/70)的自由体积参数的温度依赖性，探索相容共混物相行为的热动态特性.在PALS实验中，在玻璃化转变温度T_g以上，当结构松弛的弛豫时间与等温停留时间相当，发现在某一段温度范围内，共混物的自由体积参数随着温度的变化明显地偏离线性关系.从自由体积孔的浓度I₃值在该段的变化趋势，初步推断共混物在该温 关键词： 正电子湮没 正电子素 聚合物共混物 相分离     

Structure and electronic structure of S-doped graphitic C₃N₄ investigated by density functional theory

The structures of the heptazine-based graphitic C3N4 and the S-doped graphitic C3N4 are investigated by using the density functional theory with a semi-empirical dispersion correction for the weak long-range interaction between layers.The corrugated structure is found to be energetically favorable for both the pure and the S-doped graphitic C3N4.The S doptant is prone to substitute the N atom bonded with only two nearest C atoms.The band structure calculation reveals that this kind of S doping causes a favorable red shift of the light absorption threshold and can improve the electroconductibility and the photocatalytic activity of the graphitic C3N4.     

氮掺杂TiO2的冲击合成及可见光催化活性研究

 冲击相变及冲击诱导化学反应可导致材料的物理、化学性能发生显著改变。采用炸药爆轰驱动飞片高速碰撞产生冲击波的方法,对富氮掺杂物双氰胺（C₂N₄H₄）与P25 TiO₂或偏钛酸（H₂TiO₃）的粉末混合物进行冲击加载,对回收产物进行X射线粉末衍射、透射电子显微镜、X光电子能谱、比表面积及紫外-可见漫反射光谱表征,通过亚甲基蓝和罗丹明B评价了回收产物的可见光催化降解活性。结果表明：以P25 TiO₂为原料的冲击氮掺杂浓度可达8.88%,掺杂样品具有明显的可见光吸收,能带宽度减小到1.75 eV,样品中形成了少量Srilankite高压相;而以偏钛酸为原料的冲击氮掺杂浓度为3%～4%,能带宽度变化较小,但是由于其独特的冲击脱水膨胀机理,比表面积剧增。冲击氮掺杂样品对亚甲基蓝和罗丹明B染料有较好的吸附和可见光催化降解作用,其中高飞片速度处理的样品有更高的光催化降解活性。