Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric

Deep-trap properties of high-dielectric-constant （k） HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5eV, 1.8 ×10^-16 cm^2 and 1.0 × 10^16 cm^-3, respectively.     

Electrochemical studies on lead iodide

The total d.c. electrical conductivity of undoped PbI₂ was measured as a function of iodine potential in the region 150–300°C to determine the nature of charge carriers in PbI₂. Results indicate that PbI₂ is an ionic conductor with electron holes as the minority carriers in this temperature range. Electrical polarization experiments were also performed to determine the electron hole conductivity and concentrations, mobilities and chemical diffusion coefficients of electron holes in undoped PbI₂ between 150 and 300°C.     

高温高压下掺杂N型PbTe的热电性能

 以Sb₂Te₃作为掺杂剂，利用高温高压技术，成功合成出N型PbTe。在常温下对其热电性能的测试结果表明：掺杂微量的Sb₂Te₃后，PbTe的赛贝克系数绝对值和电阻率大幅度下降，热导率随掺杂浓度的增加缓慢升高。掺杂后PbTe的品质因子先大幅度增加，后逐渐降低，最高达到8.7×10^-4 K^-1，它比常压合成的PbTe掺杂PbI₂高一倍以上。结果表明，将高温高压方法与掺杂相结合，能有效地改善PbTe的热电性能。     

Gate dielectrics prepared by double nitridation in NO and N2O

Oxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N₂O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less charge trapping and generation of electron/hole traps in oxide, and larger charge-to-breakdown are observed for the doubly-nitrided gate dielectrics than the singly-nitrided one. By analyzing the nitrogen profiles in these oxynitrides, it is revealed that the involved mechanisms lie in the smaller distance of peak nitrogen concentration from the oxide/Si interface and the higher nitrogen content near the oxide/Si interface in the doubly-nitrided oxynitrides.     

Luminescence from Mn-doped PbI2 crystals

Luminescent properties of PbI₂ and PbI₂: 0.5 mol % MnCl₂ crystals under X-ray or N₂-laser excitation are studied experimentally. The measurements are performed at temperatures ranging from 85 to 295 K. For PbI₂ crystals under laser excitation, spectral bands with peaks near 495 and 512 nm, respectively, are observed at 85 K. With X-ray excitation at the same temperature, luminescence is observed in the 515-and 715-nm bands. The doping decreases the intensity in the 515-nm band, increases it for longer wavelengths, and shifts the highest peak to 700 nm. At 85 K, the doping has an insignificant effect on the excitation energy accumulated by trapped electrons. Certain PbI₂ crystals also exhibit a peak in a region of 580–595 nm. This peak becomes much higher if the crystal is treated with an N₂ laser at room temperature or if it is heated to 450–485 K. As the measurement temperature rises from 85 to 295 K, luminescence intensity decreases considerably. With X-ray excitation at room temperature, the yield of PbI₂: Mn luminescence peaked at 660 nm for doped crystals is about three times larger than the yield peaked at 555 nm for nondoped crystals. The spectral curves and underlying radiative processes are discussed.     

Thermoluminescence characterization of traps involved in the photodarkening of ytterbium-doped silica fibers

The photodarkening (PD) mechanisms of ytterbium-doped silica optical fibers have still not been elucidated, although hardening routes have been proposed. Most basic questions are still under debate about the assignment of the darkening excitation bands into the UV range, the nature of absorbing centers (photoionized centers or trapped carriers?), or of traps accepting photo-released carriers (electron or hole traps?). We used thermoluminescence measurements to characterize traps populated by different radiation types. It is notably demonstrated that photodarkening involves silica hole traps. The popular idea that color centers are formed upon carrier trapping is not consistent with our observations.     

少子陷阱特性和铍硅共注半绝缘GaAs空穴陷阱

用深能级瞬态谱（ＤＬＴＳ）技术测量了高温退火的Ｂｅ和Ｓｉ共注入的ＬＥＣ半绝缘ＧａＡｓ（无掺杂）。在多子脉冲作用下的Ａｌ／Ｂｅ－Ｓｉ共注ＬＥＣＳＩＧａＡｓ肖特基势垒中，观测到Ｅ₀₁（０．２９８），Ｅ₀₂（０．３４１），Ｅ₀₃（０．５５５）和Ｅ₀₄（０．８２１）等四个电子陷阱以及两个主要的少子（空穴）陷阱Ｈ＇₀₃（０．５４）和Ｈ″₀₃（０．５７）。两少子陷阱的ＤＬＴＳ信号具有若干特点，比如它们的ＤＬＴＳ·峰难于通过增宽脉冲达到最大高度；以及峰的高度强烈地依赖于温度等。这些现象可以用少子陷阱的少子俘获和热发射理论进行合理地解释。鉴于用ＤＬＴＳ技术测量这种陷阱的困难，我们用恒温电容瞬态技术测定它们的空穴表观激活能分别为０．５４和０．５７ｅＶ。它们是新观测到的和Ｂｅ－Ｓｉ共注ＳＩＧａＡｓ有关缺陷。 关键词：     

Inverted structure perovskite solar cells: A theoretical study

We analysed perovskite CH₃NH₃PbI_3-xCl_x inverted planer structure solar cell with nickel oxide (NiO) and spiro-MeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.     

Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers

Defects created in rapid thermally annealed n-GaAs epilayers capped with native oxide layers have been investigated using deep-level transient spectroscopy (DLTS). The native oxide layers were formed at room temperature using pulsed anodic oxidation. A hole trap H0, due to either interface states or injection of interstitials, is observed around the detection limit of DLTS in oxidized samples. Rapid thermal annealing introduces three additional minority-carrier traps H1 (E_V+0.44 eV), H2 (E_V+0.73 eV), and H3 (E_V+0.76 eV). These hole traps are introduced in conjunction with electron traps S1 (E_C-0.23 eV) and S2 (E_C-0.45 eV), which are observed in the same epilayers following disordering using SiO₂ capping layers. We also provide evidence that a hole trap whose DLTS peak overlaps with that of EL2 is present in the disordered n-GaAs layers. The mechanisms through which these hole traps are created are discussed. Capacitance–voltage measurements reveal that impurity-free disordering using native oxides of GaAs produced higher free-carrier compensation compared to SiO₂ capping layers. Received: 12 March 2002 / Accepted: 15 July 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +61-2/6125-0381, E-mail: pnk109@rsphysse.anu.edu.au     

注硅半绝缘GaAs的深能级

用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E₀₁,E₀₂,E₀₃和E₀₄。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E₀₄与EL2有关,但不是EL2缺陷。E₀₄的电子 关键词：     

Water-related charge carrier traps in thermal silicon dioxide films prepared in dry oxygen

The parameters of electron and hole traps in thermal silicon dioxide films prepared in dry oxygen have been investigated using avalanche injection of electrons and holes from silicon in combination with measurements of capacitance-voltage and current-voltage characteristics of photoinjection of electrons from junctions with variations in the conditions of oxidation, annealing, and storage of Si-SiO₂ structures. The model concepts proposed by the author for water-related charge carrier traps in such films have been confirmed. It has been found that the transport characteristics of the traps depend on the time of contact between Si-SiO₂ structures and atmospheric air of natural humidity. The results obtained can be used for the suppression of degradation processes in devices based on Si-SiO₂ structures, in the design of electroluminescent instruments based on Si-SiO₂ structures, and in the study of the transport characteristics of some molecules (for example, water), atoms, and ions in pores (structural channels) whose sizes are comparable to the sizes of water molecules.     

The effects of deep trap population on the thermoluminescence of Al2O3:C

The influence of deep traps on the 450 K thermoluminescence (TL) peak of Al₂O₃:C is studied. Depending upon the sample and on the degree of deep trap filling, features such as the TL width, area and height can vary considerably. These effects are interpreted to be due to: (a) sensitivity changes introduced by competition mechanisms involving deep electron and hole traps, and (b) the multiple component nature of the 450 K TL peak. The influence of the deep traps on the TL was studied using different excitation sources (beta irradiation or UV illumination), and step annealing procedures. Optical absorption measurements were used to monitor the concentration of F- and F⁺-centers. The data lead to the suggestion that the competing deep traps which become unstable at 800–875 K are hole traps, and that the competing deep traps which become unstable at 1100–1200 K are electron traps. Both the dose response of the TL signal and the TL sensitivity are shown to be influenced by sensitization and desensitization processes caused by the filling of deep electron and hole traps, respectively. Changes in the TL peak at low doses were also shown to be connected to the degree of filling of deep traps, emphasizing the influence of deep trap concentration and dose history of each sample in determining the TL properties of the material. Implications of these results for the optically stimulated luminescence properties are also discussed.     

Excitation spectra of donor-acceptor pair photoluminescence in ZnTe

Photoluminescence excitation spectra of donor-acceptor pairs have been observed in phosphorus doped ZnTe. Binding energies of the donor and the acceptor is estimated from the spectra. Emission spectra measured under below-band-gap excitation showed sharp bands superimposed with a broad emission band. The result indicates the existence of two decay processes under the below-band-gap excitation: (1) recombination of an electron and a hole trapped on a given D-A pair, and (2) recombination of D-A pairs with various distances for which bound electrons are formed via conduction band.     

Phonon-assisted stimulated emission in 2H type PbI2

The stimulated emission in 2H type PbI₂ crystals has been observed under N₂ laser beam excitation at 4.2 K. The analysis of its gain spectrum shows that the emission is induced by the recombination of free exciton assisted by the emission of one longitudinal optical phonon. At a higher level of excitation, the gain spectrum peak shifts to lower energy side. Possible mechanisms of this spectral change are discussed.     

Luminescence properties of Tb-activated yttrium gallium garnet phosphors

Comparison of luminescence properties between electron-excited and uv-excited yttrium gallium garnet: Tb phosphors is reported. Although the thermoluminescence and phosphorescence in both cases are quite alike once traps are filled, an apparent difference in the behavior of trap filling has been observed. Small addition of V₂O₃ to these phosphors revealed a unique effect on luminescence properties either with the electron excitation or with the uv excitation.     

Size-Dependent Effects in EPR and Luminescence Spectra of NH<Subscript>4</Subscript>BPh<Subscript>4</Subscript> Excited States: from Bulk to Nanoparticles

Photoexcited states of NH₄BPh₄ (TPhBA) particles embedded in mesoporous frameworks of different pore sizes were studied by combined electron paramagnetic resonance (EPR), optical and photoluminescence techniques. A distribution of triplet states with short and long electron–hole distances was found. While EPR studies on TPhBA bulk sample suggested that the formation of electron–hole pairs upon the excitation was caused by electron capture on electron traps, the samples in mesoporous frameworks exhibit two ways of the pair formation. The first one is attributed to the capture on phenyl rings and another one is to be thought as the capture of electrons on adsorbed oxygen molecules. These results are also consistent with the thermoluminescence spectra and EPR studies of the photoexcited samples during annealing.     

Flexible X‐ray detector based on sliced lead iodide crystal

A promising flexible X‐ray detector based on inorganic semiconductor PbI₂ crystal is reported. The sliced crystals mechanically cleaved from an as‐grown PbI₂ crystal act as the absorber directly converting the impinging X‐ray photons to electron hole pairs. Due to the ductile feature of the PbI₂ crystal, the detector can be operated under a highly curved state with the strain on the top surface up to 1.03% and still maintaining effective detection performance. The stable photocurrent and fast response were obtained with the detector repeated bending to a strain of 1.03% for 100 cycles. This work presents an approach for developing efficient and cost‐effective PbI₂‐based flexible X‐ray detector.

     

Thermally stimulated current measurements in as-grown TlGaSeS layered single crystals

Charge carrier traps in as-grown TlGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TlGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have been found to be 8.9 × 10⁻²⁶ cm² and 2.0 × 10¹⁴ cm⁻³, respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 19 meV/decade for the shallow hole traps distribution.     

Size effects in photoexcitation of triplet states of ammonium tetraphenylborate

This paper reports on the results of complex investigations of photoexcited states of ammonium tetraphenylborate, which are characterized by self-sensitized luminescence. It has been established that the excitation by UV light at 77 K leads to the formation of stable triplet states due to the capture of electrons on electron traps. The EPR and luminescence excitation spectra exhibit the formation of a set of triplet states with different distances between electrons and holes. The performed investigations give grounds to affirm that, in bulk samples, cations in the structure of ammonium tetraphenylborate are electron traps. When the size of the ammonium tetraphenylborate sample is changed to 6 and 3 nm, the capture of excited electrons on sorbed oxygen molecules becomes dominant. In this case, the appearance of the spectrum of O₂⁻ anion radicals has been detected by the EPR method. The proposed interpretation of the observed effects has been confirmed by the thermoluminescence data on the recombination of electron-hole pairs, which correlate with a change in the intensity of the EPR spectra during annealing.     

Satellite peaks in the high energy photoelectron spectra of some small first row molecules

The gas phase high energy photoelectron spectra of CH₄, NH₃, H₂O, N₂, O₂, CO and CO₂ have been recorded, and in all cases weak satellite peaks to high binding energy of the main ionization peak are observed. These peaks are assigned to transitions to ionic states in which valence electron excitation as well as core ionization has occurred. The intensity and position of these peaks, relative to the main ionization peak have been estimated from ab initio UHF calculations on the core hole states, which in general allow assignment of the satellite peaks in terms of orbital transitions of the core hole ion.