少子陷阱特性和铍硅共注半绝缘GaAs空穴陷阱

用深能级瞬态谱（ＤＬＴＳ）技术测量了高温退火的Ｂｅ和Ｓｉ共注入的ＬＥＣ半绝缘ＧａＡｓ（无掺杂）。在多子脉冲作用下的Ａｌ／Ｂｅ－Ｓｉ共注ＬＥＣＳＩＧａＡｓ肖特基势垒中，观测到Ｅ₀₁（０．２９８），Ｅ₀₂（０．３４１），Ｅ₀₃（０．５５５）和Ｅ₀₄（０．８２１）等四个电子陷阱以及两个主要的少子（空穴）陷阱Ｈ＇₀₃（０．５４）和Ｈ″₀₃（０．５７）。两少子陷阱的ＤＬＴＳ信号具有若干特点，比如它们的ＤＬＴＳ·峰难于通过增宽脉冲达到最大高度；以及峰的高度强烈地依赖于温度等。这些现象可以用少子陷阱的少子俘获和热发射理论进行合理地解释。鉴于用ＤＬＴＳ技术测量这种陷阱的困难，我们用恒温电容瞬态技术测定它们的空穴表观激活能分别为０．５４和０．５７ｅＶ。它们是新观测到的和Ｂｅ－Ｓｉ共注ＳＩＧａＡｓ有关缺陷。 关键词：

PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATION

The deep levels have been investigated by the deep level transient spectroscopy (DLTS) technique in Si-and Be-coimplanted undoped semi-insulating LEC GaAs. The four electron traps, Ｅ₀₁（０．２９８），Ｅ₀₂（０．３４１），Ｅ₀₃（０．５５５） and Ｅ₀₄（０．８２１），and two hole traps, Ｈ＇₀₃（０．５４） and Ｈ″₀₃（０．５７）, were observed by majority carrier pulse DLTS measurement. The DLTS signals of the two hole (minority carrier) traps possesses several interesting properties, for example, it is very difficult to make the heights of the DLTS peaks of them reach their maxima by broadening the pulse width, and the heights of the peaks depend strongly on the temperature of the samples. These phenomena can be successfully explained by the theory of the capture and thermal emission of the minority carrier at the trap. It is impossible to measure the energy levels of such two traps using the traditional DLTS technique, therefore, the hole apparent activation energies were measured to be 0.54 and 0.57eV by the constant teuiperature capacitance transient technique, respectively. The Ｈ＇₀₃ and Ｈ″₀₃ are newly observed defects which relate to the Si-and Be-coimplantaion in semi-insulating LEC GaAs.