注硅半绝缘GaAs的深能级

用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E₀₁,E₀₂,E₀₃和E₀₄。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E₀₄与EL2有关,但不是EL2缺陷。E₀₄的电子 关键词：

DEEP LEVELS IN Si-IMPLANTED SEMI-INSULATOR GALLIUM ARSENIDE

The deep centers in Si-implanted LEC semi-insulator gallium arsenide have been carefully studied using the deep level transient spectroscopy (DLTS) technique. The results are as follows. The four majority carrier traps,E₀₁ ,E₀₂,E₀₃ and E₀₄ have been observed in the active regions of the Si-implanted LEC semi-insulator gallium arsenide after high temperature an-nealling, and their electron apparent activation energies are 0.298, 0.341, 0. 555 and 0. 821 eV respectively. The E₀₄ trap is related to the EL2. The activation energy of the electron capture cross section of E₀₄ is 0. 119 eV Three minority carrier (hole) traps have been newly found in the same active regions. The hole apparent activation energy of the H₀₃ trap is 0. 713 eV and its concentration is about 2. 8×10¹⁶cm^-3.