GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应

研究了1 MeV和1.8 MeV电子辐照下GaInP/GaAs/Ge三结太阳电池的辐照损伤效应.电学性能研究结果表明,GaInP/GaAs/Ge三结太阳电池的开路电压、短路电流和最大功率随辐照剂量的增加发生明显衰降,在1 MeV电子辐照下剂量为1×10¹⁵cm^-2时,与辐照前相比最大功率衰降了17.7%.暗I-V特性分析表明,高能电子辐照下三结电池串、并联电阻的变化是引起太阳电池电学性能衰降的重要原因.光谱响应分析结果表明,GaInP 关键词： GaInP/GaAs/Ge太阳电池 电子辐照 电学性能 光谱响应     

位移损伤剂量法评估空间GaAs/Ge太阳电池辐照损伤过程

本文针对GaAs/Ge太阳电池,利用位移损伤剂量法研究了其在轨服役条件下的性能退化行为.首先在地面模拟辐照环境中,试验获得了在不同能量的电子和质子辐照下的电池性能随辐照注量的退化行为.基于上述实验结果以及计算获得的带电粒子在电池中的非电离能量损失(NIEL)获得了不同能量电子辐照位移损伤的等效指数n为1.7,电子损伤剂量转化为质子损伤剂量等效系数为5.2,并进一步建立了电池性能随位移损伤剂量的退化方程.利用该方法对国产GaAs/Ge太阳电池在500,22000和36000 km轨道带电粒子辐 关键词： GaAs/Ge太阳电池 辐照损伤 带电粒子 位移损伤剂量     

GaInP/GaAs/Ge三结太阳电池不同能量质子辐照损伤模拟

以GaInP/GaAs/Ge三结太阳电池为研究对象,开展了能量为0.7, 1, 3, 5, 10 MeV的质子辐照损伤模拟研究,建立了三结太阳电池结构模型和不同能量质子辐照模型,获得了不同质子辐照条件下的I-V曲线,光谱响应曲线,结合已有实验结果验证了本文模拟结果,分析了三结太阳电池短路电流、开路电压、最大功率、光谱响应随质子能量的变化规律,利用不同辐照条件下三结太阳电池最大输出功率退化结果,拟合得到了三结太阳电池最大输出功率随位移损伤剂量的退化曲线.研究结果表明,质子辐照会在三结太阳电池中引入位移损伤缺陷,使得少数载流子扩散长度退化幅度随质子能量的减小而增大,从而导致三结太阳电池相关电学参数的退化随质子能量的减小而增大.相同辐照条件下,中电池光谱响应退化幅度远大于顶电池光谱响应退化幅度,中电池抗辐照性能较差,同时中电池长波范围内光谱响应的退化幅度比短波范围更大,表明中电池相关电学参数的退化主要来源于基区损伤.     

不同能量质子辐照诱发子电池GaAs退化模拟研究

为了研究空间辐照诱发的子电池GaAs相关参数的退化行为,以三结太阳电池的子电池GaAs为研究对象,开展了不同辐照条件下的质子辐照模拟研究,建立了子电池GaAs结构模型,得到了不同辐照能量和注量下短路电流、开路电压、转化因子、最大功率的退化结果。利用现有实验数据,验证了不同能量质子辐照诱发的子电池GaAs的归一化最大功率随质子注量的退化。结合子电池GaAs在不同辐照条件下的最大功率退化结果,得到了归一化最大功率随位移损伤剂量的退化方程。研究结果表明:质子辐照诱发的辐照缺陷是导致子电池退化的直接原因,子电池GaAs的短路电流、开路电压、转化因子和最大功率随质子注量的增加而逐渐退化。当质子注量大于1×10~(11) cm~(-2)时,子电池GaAs的归一化电学参数的退化幅度与质子注量的对数值近似成正比,电学参数的退化随质子辐照能量的减小而逐渐增加。质子辐照诱发的子电池GaAs的外量子效率在长波长范围内的退化情况比其在短波长范围内的退化情况更严重。     

100 keV质子辐照对空间GaAs/Ge太阳电池光电效应的影响

利用空间环境模拟设备,用固定能量为100keV、注量为1×10⁹—3×10¹²cm^-2的质子,对空间实用GaAs/Ge太阳电池进行了辐照试验.利用伏安(I-V)特性、光谱响应和光致发光(PL)光谱测试,研究分析了电池的光电效应.试验表明,电池的各种电性能参数如短路电流(I_sc)、开路电压(V_oc)、最大输出功率(P_{m< 关键词： GaAs/Ge太阳电池 质子辐照 光电效应}     

质子辐射下互补金属氧化物半导体有源像素传感器暗信号退化机理研究

对某国产0.5 μm工艺制造的互补金属氧化物半导体有源像素传感器进行了10 MeV质子辐射试验, 当辐射注量达到预定注量点时, 采用离线的测试方法, 定量测试了器件暗信号的变化情况. 试验结果表明, 随着辐射注量的增加暗信号迅速增大. 采用MULASSIS (multi-layered shielding simulation software)软件计算了电离损伤剂量和位移损伤剂量, 在与γ辐射试验数据对比的基础上, 结合器件结构和工艺参数, 建立了分离质子辐射引起的电离效应和位移效应理论模型, 深入分析了器件暗信号的退化机理. 研究结果表明, 对该国产器件而言, 电离效应导致的表面暗信号和位移效应导致的体暗信号对整个器件暗信号退化的贡献大致相当.     

高温处理工艺对低压MOCVD外延GaAs/Ge太阳电池的影响

采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在Ge衬底(100)面向(111)偏9°外延生长出GaAs电池结构,对电池材料进行了X射线衍射分析另外,对由此材料制成的太阳电池进行了性能测试,测试结果表明,Ge衬底的高温处理工艺对GaAs/Ge太阳电池的电流电压特性有一定的影响试验表明,在600～700℃之间高温处理效果较好。     

电子辐照下GaAs/Ge太阳电池载流子输运机理研究

通过地面模拟辐照试验获得不同能量电子辐照下GaAs/Ge太阳电池电学参数退化的基本规律, 在此基础上使用PC1 D模拟程序分析太阳电池内部的载流子输运机理, 建立不同能量的电子辐照下GaAs/Ge太阳电池中多数载流子浓度和少数载流子扩散长度随辐照粒子注量变化的基本规律. 研究结果表明: 多数载流子浓度和少数载流子扩散长度均随入射电子注量的增大而减小, 多数载流子去除率和少数载流子扩散长度损伤系数均随电子能量的增高而增大, 多数载流子去除效应和少数载流子扩散长度缩短分别是电池开路电压和短路电流退化的主要原因.     

975 nm量子阱激光二极管的质子位移损伤

针对典型卫星轨道辐射环境下激光二极管(LD)的可靠性评估问题，对自研的975 nm GaAs基量子阱(QW)LD开展了10 MeV质子、3×10⁸～3×10¹¹ cm^-2注量的地面模拟辐照实验。结合蒙特卡罗软件仿真模拟和数学分析方法，全面研究了器件位移损伤退化规律，以及不同注量、不同辐照缺陷对器件功率特性、电压特性和波长特性等关键参数的影响。结果显示，质子辐照会引入非辐射复合中心等缺陷并破坏界面结构，导致载流子浓度降低、光电限制能力下降，宏观上体现为器件阈值电流增加、输出功率下降、波长红移和单色性受损。同时，3×10¹⁰ cm^-2以上注量的10 MeV质子等效位移损伤剂量辐照会对975 nm QW LD性能产生较大影响。     

电荷耦合器件在质子辐照下的粒子输运仿真与效应分析

应用蒙特卡洛方法计算了质子在科学级电荷耦合器件(charge-coupled device, CCD) 结构中的能量沉积, 并结合该CCD的质子辐照试验及退火试验数据, 分析了器件的辐射损伤机理. 仿真计算体硅内沉积的位移损伤剂量和栅氧化层的电离损伤剂量, 辐照与退火试验过程中主要考察暗信号、电荷转移效率两个参数的变化规律. 研究结果显示, 暗信号和电荷转移效率的变化规律与位移、电离损伤剂量一致; 退火后暗信号大幅度降低, 辐照导致的表面暗信号增加占总暗信号增加的比例至少为80%; 退火后电荷转移效率恢复较小, 电荷转移效率降低的原因主要为体缺陷. 通过总结试验规律, 推导出了电荷转移效率退化程度的预估公式及其损伤因子k_damage.     

Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under1-MeV electron irradiation

In this work the degradation effects of the Ga_(0.7)In_(0.3)As(1.0 eV) and Ga_(0.42)In_(0.58)As(0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence(PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction(SJ) GaAs(1.41 eV) solar cell, the electrical properties(such as Isc, Voc, and Pmax)of the newly sub-cells degrade similarly as a function of log ?, where ? represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga_(0.42)In_(0.58)As(0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga_(0.7)In_(0.3)As(1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga_(0.7)In_(0.3)As(1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time(τeff) in the SJ Ga_(0.7)In_(0.3)As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus,the output current of Ga_(0.7)In_(0.3)As sub-cell should be controlled in the irradiated IMM4J cells.     

Temperature and 8 MeV electron irradiation effects on GaAs solar cells

GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space. In this paper, the results of the studies carried out on the effect of 8 MeV electron irradiation on the electrical properties of GaAs solar cells are presented. The I–V (current-voltage) characteristics of the cells under dark and AM1.5 illumination condition are studied and 8 MeV electron irradiation was carried out on the cells where they were exposed to graded doses of electrons from 1 to 100 kGy. The devices were also characterized using capacitance measurements at various frequencies before and after irradiation. The effect of electron irradiation on the solar cell parameters was studied. It is found that only small changes were observed in the GaAs solar cell parameters up to an electron dose of 100 kGy, exhibiting good tolerance for electrons of 8 MeV energy.     

1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究

对采用MOCVD方法制备的晶格匹配(LM)与晶格失配(UMM)GaInP/GaInAs/Ge三结太阳电池进行了1MeV电子辐射效应研究。结果表明:在电子辐照下,两种电池的I-V特性参数(开路电压Voc,短路电流Isc,最大输出功率Pmax)均发生衰降,且晶格失配电池的I-V特性参数衰降均大于晶格匹配电池。在光谱响应方面,对于顶电池,晶格匹配电池的衰降大于晶格失配电池;而中间电池则前者衰降小于后者;另外,Ge底电池的光谱响应表现特殊,辐照后光谱响应变强。     

Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes

In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×10³ and 1.27×10⁴, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ _Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (N_ss) is obtained from the forward bias I-V. In addition, the values of series resistance (R_s) for the two diodes are calculated from Cheung's method and Ohm's law.     

Correlation between Displacement Damage Dose and Proton Irradiation Effects on GaInP/GaAs/Ge Space Solar Cells

The irradiation effects of 0.28-2.80 MeV protons on GalnP/GaAs/Ge solar cells have been analysed, and then correlated with the displacement damage dose. The results of I-V and spectral response measurements, combined with the SRIM-derived vacancies produced rates, show that the degradation of the solar cells is largely determined by the displacement damage of the GaAs sub-cell. Thus the SRIM-derived NIEL values for protons in the GaAs sub-cell are used to calculate the displacement damage dose. It is shown that the irradiation effects of the solar cells caused by protons at different energies are correlated well with the aid of displacement damage dose.