Temperature and 8 MeV electron irradiation effects on GaAs solar cells |
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Authors: | Asha Rao Sheeja Krishnan Ganesh Sajeev and K Siddappa |
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Institution: | 1.Department of Physics,Mangalore Institute of Technology and Engineering,Moodbidri,India;2.Microtron Centre, Department of Physics,Mangalore University,Mangalagangothri,India;3.JSS Foundation for Science and Society,Bangalore,India |
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Abstract: | GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in
advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions
and the stability of the cells against particle irradiation in space. In this paper, the results of the studies carried out
on the effect of 8 MeV electron irradiation on the electrical properties of GaAs solar cells are presented. The I–V (current-voltage) characteristics of the cells under dark and AM1.5 illumination condition are studied and 8 MeV electron
irradiation was carried out on the cells where they were exposed to graded doses of electrons from 1 to 100 kGy. The devices
were also characterized using capacitance measurements at various frequencies before and after irradiation. The effect of
electron irradiation on the solar cell parameters was studied. It is found that only small changes were observed in the GaAs
solar cell parameters up to an electron dose of 100 kGy, exhibiting good tolerance for electrons of 8 MeV energy. |
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