玻璃表面层光学参数分布的研究

利用并改进平板玻璃两面Ｐ偏振光反射光强比的测量来确定玻璃表面光学参数的方法，测量了平板玻璃两面Ｐ偏振光反射光强比γ与入射角θｉ的关系曲线，运用新的表面层模型进行数据模拟，获得了表面层的光学参数分布。     

基于p偏振光双面反射的薄膜传感器光学参数的优化

ｐ偏振光在镀膜平板玻璃上、下表面反射光强比γ的角度调制曲线的性状与膜层光学参数密切相关。分析了γ与膜层折射率、消光系数及膜厚的相对梯度随光参数变化的着急为基于ｐ偏振光双面反射的薄膜传感器选择最佳参数提供了理论依据,计算表明该类型传感器对膜层折射率的测量分辨率高达１０＾－７。对不同工艺条件下得到的溶胶－凝胶ＳｎＯ２膜进行光学参数测定及初步气敏实验,结果表明ｐ偏振光双面反射可作为高灵敏度光化学传感器的     

利用4400系统构造具有光学多道分析功能的信号处理系统

基于4400系统,通过引入光电二极管列阵作为传感器,构造了具有光学多道分析功能的信号处理系统。利用该系统对实际的激光空间分布进行了描绘,给出了高斯场分布的相应参数。通过进一步观测p偏振光在K9玻璃上下表面反射光强比(γ)的角度调制曲线,获得了玻璃表面层的光学参数。实验结果表明,该系统测量精度高,可应用在激光时间信号及空间场分布的表征与测量领域。     

利用P—偏振光双面反射法测量多层膜的光学参数

利用Ｐ－偏振光双面反射法测量了浸泡提拉法制备了“有机硅树脂－二氧化硅－有机硅树脂”三层膜样品两面Ｐ－偏振光反射强比γ与入射角θ关系曲线，经过数据拟合，确定了这三层薄膜的光学参数，同时研究了薄膜间的相互作用层的光学参数，测量结果表明此方法可能成为研究薄膜和膜层之间的相互作用的一种新手段。     

Sb掺和对TeOx薄膜光学和静态记录特性的影响

以真空蒸镀法在K9玻璃基底上制备了TeO_x:Sb单层薄膜,对薄膜的结构、光学和静态记录特性进行了研究.结果表明,Sb掺和后TeO_x薄膜的结构、反射光谱和光学常量均发生了明显变化.TeO_x:Sb薄膜具有良好的写入灵敏性并具有了一定的可擦除性能,该类薄膜有望作为可擦除光存储介质.     

高折射率光学薄膜的化学法制备研究

 报道了一种以ZrOC₁₂·8H₂O为源,溶胶-凝胶法制备高激光负载高折射率薄膜的新方法。薄膜采用旋转镀膜法制备,对薄膜的结构、光学特性及激光损伤阈值进行了测量,有机粘接剂对薄膜折射率及机械强度的影响也作了探讨。以该薄膜与SiO₂溶胶凝胶膜交替涂覆制成的多层高反膜,剩余透过率仅0.98%,激光损伤阈值达16J/cm²（3ns）。     

SR-FEL宽带腔镜与双带腔镜光学膜系实验研究与研制

利用“电子束蒸发沉积薄膜生长技术+离子束溅射沉积薄膜生长技术”、“HfO₂/SiO₂+Al₂O₃/SiO₂+M-SiO₂”复合光学膜系设计技术、400°C4h高温处理技术, 研制的SR-FEL宽带腔镜光学膜系在355nm中心波长的绝对光学反射率测量值为R(355nm)=99.45%, 反射光谱带宽测量值为Δλ(R≥99.00%)=75nm; 研制的355nm/248nm双带腔镜光学膜系, 在355nm中心波长, 其绝对光学反射率测量值为R(355nm)=99.69%, 反射光谱带宽测量值为Δλ(R≥99.00%)=59nm; 在248nm中心波长, R(248nm)=98.21%, 绝对光学反射率光谱带宽测量值Δλ(R≥99.00)=9mm, Δλ(R≥98.00%)=33nm.     

ZrO2/SiO2溶胶-凝胶薄膜膜层间的渗透行为

 分别以丙醇锆和正硅酸乙酯为原料，采用溶胶-凝胶工艺制备了性能稳定的ZrO₂和SiO₂溶胶。用旋转镀膜法在K9玻璃上分别制备了单层SiO₂薄膜、单层ZrO₂薄膜、ZrO₂/ SiO₂双层膜和SiO₂/ZrO₂双层膜。采用原子力显微镜观察了薄膜的表面形貌，用椭偏仪测量薄膜的厚度与折射率，用紫外-可见光分光光度计测量了薄膜的透射率。对薄膜的透射光谱和椭偏仪模拟的数据进行分析，发现SiO₂/ZrO₂双层膜之间的渗透十分明显，而ZrO₂/SiO₂双层膜之间几乎不发生渗透。利用TFCalc模系设计软件,采用三层膜模型对薄膜的透射率进行模拟，得出的透射曲线与用紫外-可见光分光光度计测量的透射曲线十分符合。     

不同工艺制备的高反射薄膜在真空与大气环境下的激光损伤特性

 建立了光学元件在真空环境下的激光损伤测量系统,采用电子束蒸发和离子辅助技术制备了Hf­₂/SiO₂高反射薄膜。对不同工艺制备的薄膜在真空与大气环境下的1 064 nm波长的激光损伤阈值进行了测量,对薄膜的损伤形貌进行了观测。对薄膜的损伤特性研究分析结果表明：薄膜在真空环境中的损伤阈值相对大气环境中有明显下降,其1∶1测试和R1测试损伤阈值下降约30%;两种环境中的薄膜损伤特性也不同,真空环境中损伤阈值的下降可能与热传导的不同有关。     

研究玻璃表面层参数的一种新方法——平板双面偏振光反射光强比的测量

力偏振光在玻璃或其它透明材料平行平板前后表面反射光强比值与入射角的关系。对样品表面层的物理参数(折射率、厚度和吸收)很敏感,特别是当表面层的折射率与平板基底的折射率很接近时,尤其明显。本文结出的薄膜光学为基础的数字模拟和初步实验结果。采用数值拟合的方法,根据比值与角度的实验曲线可以得出样品表面层的物理状态。本法设备简单,结果直观。     

Laser spectroscopic investigation of a new precursor-type polyparaphenylenevinylene

Optical, structural and morphological properties of thin films of polyparaphenylenevinylene (PPV) formed by an alkyl sulfinyl precursor route have been studied. Thin films were fabricated on an optical glass and on quartz glass either by spin-coating of the precursor solution or by layer-by-layer deposition using Langmuir–Blodgett technique. PPV precursor films were also spin-coated on gold-coated glass in order to study thin-film optical parameters by surface plasmon spectroscopy. We have been successful in forming about 40 precursor mono layers on quartz glass by Langmuir–Blodgett technique using optimized surface pressure and dipping conditions. After thermal conversion of the precursor layers good quality fluorescent PPV films of yellow colour have been obtained. Optical characterization of the films was carried out by linear absorption and emission spectroscopy, ellipsometry, and surface plasmon spectroscopy. Structural and morphological studies on the thin films were carried out by using X-ray scattering and atomic force microscopy. Wave-guided travelling-wave laser action has been achieved in a PPV film on quartz glass. The sample was transversally pumped with picosecond laser pulses (wavelength 347.15 nm, duration 35 ps). Laser emission occurred at 550 nm for pump pulse energy densities above .     

Femtosecond laser patterning of Ta0.1W0.9Ox/ITO thin film stack

Selective laser patterning of thin films in a multilayered structure is an emerging technology for process development and fabrication of optoelectronics and microelectronics devices. In this work, femtosecond laser patterning of electrochromic Ta_0.1W_0.9O_x film coated on ITO glass has been studied to understand the selective removal mechanism and to determine the optimal parameters for patterning process. A 775 nm Ti:sapphire laser with a pulse duration of 150 fs operating at 1 kHz was used to irradiate the thin film stacks with variations in process parameters such as laser fluence, feedrate and numerical aperture of objective lens. The surface morphologies of the laser irradiated regions have been examined using a scanning electron microscopy and an optical surface profiler. Morphological analysis indicates that the mechanism responsible for the removal of Ta_0.1W_0.9O_x thin films from the ITO glass is a combination of blistering and explosive fracture induced by abrupt thermal expansion. Although the pattern quality is divided into partial removal, complete removal, and ITO film damage, the ITO film surface is slightly melted even at the complete removal condition. Optimal process window, which results in complete removal of Ta_0.1W_0.9O_x thin film without ablation damage in the ITO layer, have been established. From this study, it is found that focusing lens with longer focal length is preferable for damage-free pattern generation and shorter machining time.     

Reversible and athermal photo-vitrification of As50Se50 thin films deposited onto silicon wafer and glass substrates

Photo-vitrification of As₅₀Se₅₀ thin films deposited onto silicon wafer and glass substrates has been studied using X-ray diffraction, far-infrared, and differential infrared spectroscopies. The optical study of this photo-amorphization effect has been carried out by two different methods enabling the determination of the average thickness and refractive index of a wedge-shaped thin film. The refractive-index behaviour of the as-evaporated, crystallized, and photo-vitrified As₅₀Se₅₀ films is analyzed within the single-oscillator approach. The optical-absorption edge is described using the non-direct transition model, and the optical energy gap is calculated. In the course of the vitrification of an As₅₀Se₅₀ thin film deposited on a silicon substrate the photo-oxidation of the film has been additionally detected and arsenic trioxide micro-crystals were formed on the surface of the film. Such oxidation has not been observed with As₅₀Se₅₀ films deposited on glass substrates, which demonstrates that the photo-vitrification phenomenon depends also on the type of substrate. Finally, it is concluded from the optical study that a reversible photo-darkening effect accompanies the photo-induced vitrification phenomenon. Received: 3 August 1998 / Accepted: 13 January 1999 / Published online: 7 April 1999     

Preparation and properties of SnS film grown by two-stage process

SnS films have been prepared by a novel two-stage process. It involved sputtering of Sn film on glass substrate and sulfurization of the thin metallic tin precursor layers in a vacuum furnace. The X-ray diffraction results showed that the SnS layers had orthorhombic structure and (0 4 0) preferential growth is more and more obvious with the increase of sulfurization time. The SnS film obtained by this work shows high optical absorption efficiency, and the film has a direct optical band gap of about 1.3 eV. The films show p-type conductivity and the resistivity of SnS film decreased obviously under illumination.     

脉冲偏压电弧离子镀TiO2薄膜的力学与光学性能

用脉冲偏压电弧离子镀技术在玻璃基片上制备均匀透明的TiO₂薄膜.利用X射线衍射仪、原子力显微镜、扫描电子显微镜、紫外-可见透射光谱仪和纳米压痕仪等手段,对不同脉冲负偏压下合成薄膜的相结构、微观结构、表面形貌、力学和光学性能进行表征.结果表明，沉积态薄膜为非晶态.脉冲负偏压对薄膜性能有明显的影响.随偏压的增加，薄膜厚度、硬度和弹性模量均先增大后减小，前者峰值出现在100—200 V负偏压范围，后两者则在250—350V范围.300 V负偏压时薄膜硬度最高，薄膜达到原子级表面光滑度，均方 关键词： 2薄膜')" href="#">TiO₂薄膜 脉冲偏压电弧离子镀 硬度 折射率     

Effect of deposition method on the optical and microstructural properties of vacuum-deposited MgF2 thin films

The optical and structural properties of magnesium fluoride films deposited by conventional e-beam evaporation and sputtering have been investigated herein. Deposition processes were carried out on the glass substrates in the absence of any reactive gases. The results show that the deposition method has a considerable effect on the optical and microstructural properties MgF₂ film. Also, the results show that the deposition parameters of the sputtered MgF₂ films can be easily controlled to yield the desired layer. The optical, chemical, and structural properties of the deposited MgF₂ films were characterized by using spectrophotometer, X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, and atomic force microscopy.     

Cerium dioxide thin film optical waveguides

Cerium dioxide thin film optical waveguides were fabricated by an RF magnetron sputtering process. The films were deposited on glass substrates and on silicon dioxide layers grown on silicon substrates. Optical loss measurements for the fabricated waveguides are reported. It is seen that the volume losses in the films were fairly high compared with the surface losses.     

Thickness dependent optical dispersion parameters and nonlinear optical properties of nanostructured Cr doped CdO thin films

Cr doped CdO thin films were deposited on glass substrates by reactive DC magnetron sputtering with varying film thickness from 250 to 400 nm. XRD studies reveal that the films exhibit cubic structure with preferred orientation along the (2 0 0) plane. The optical transmittance of the films decreases from 92 to 72%, whereas the optical energy band gap of the films decreased from 2.88 to 2.78 eV with increasing film thickness. The Wemple–DiDomenico single oscillator model has been used to evaluate the optical dispersion parameters such as dispersion energy (E_d), oscillator energy (E_o), static refractive index (n_o) and high frequency dielectric constant (ε_∞). The nonlinear optical parameters such as optical susceptibility (χ⁽¹⁾), third order nonlinear optical susceptibility (χ⁽³⁾) and nonlinear refractive index (n₂) of the films were also determined.     

Deposition of MgF2 thin films for antireflection coating by using thermionic vacuum arc (TVA)

In this study, optical and surface properties of MgF₂ thin films produced by thermionic vacuum arc (TVA) technique have been investigated. By means of this technique the MgF₂ thin film produced by condensing the plasma of anode material generated by using TVA under high vacuum conditions on the glass. The optical properties have been investigated by using Filmetrics F20 and UV/VIS spectrometer. For surface properties of produced thin films EDS, SEM and AFM have been used. Our analysis shows that MgF₂ thin films produced by using TVA are proper single and multi layer anti-reflective (AR) coating and TVA technique brings very important advantages for ophthalmic glass coating and industrial applications' optical purposes.     

The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films

CdSe thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological, optical and electrical properties of CdSe thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature with hexagonal structure and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The optical absorption studies revealed that the films are found to be a direct allowed transition. The energy bandgap values were changed from 1.93 to 1.87 eV depending on the film thickness. The electron effective mass (m_e^?/m_o), refractive index (n), optical static and high frequency dielectric constant (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the film thickness. The resistivity of the films changed between 10⁶ and 10² Ω-cm with increasing film thickness at room temperature.