基于密度泛函理论解读不同高密度储氢材料释氢能力

采用基于密度泛函理论的第一原理平面波赝势方法,研究了MgH₂, LiBH₄,LiNH₂,NaAlH₄几种高密度储氢材料及其合金的释氢及影响机理.结果表明:高密储氢材料MgH₂,LiBH₄,LiNH₂,NaAlH₄都比较稳定,释氢温度都很高,合金化可以降低它们的稳定性,但系统稳定性不是决定高密度储氢材料释氢性质的关键因素;带隙的宽窄基本可以表征储氢材料成键的强弱,能隙越宽,键断开越难,释氢温度就越高;LiNH₂价带顶成键峰主要由Li—N成键贡献,N—H键构成较低的峰,使得LiNH₂储氢材料的带隙虽很窄释氢温度却较高,且放氢过程中有氨气放出;合金化使得几种高密度储氢材料的带隙变窄,费米能级进入导带,从而使它们的释氢性能大大改善;电荷布居分析发现LiBH₄中B—H键最强,LiNH₂中H—N键最弱,因此LiNH₂中H相对容易放出.合金化后,各储氢材料中X—H键强度都有所降低,且LiMgNH₂中N—H键强度最低,因此从降低释氢温度角度,发展LiNH₂储氢材料最为有利. 关键词： 储氢材料 第一原理 释氢能力     

元素替代对MgH2储氢材料释氢影响机理的第一原理研究

用基于密度泛函理论的赝势平面波第一原理方法研究金属元素替代对MgH₂释氢的影响机理.结果表明：带隙的宽窄和带隙中是否存在杂质能级是影响MgH₂储氢材料释氢性能的关键因素,Nb,Fe,Ti,V在能隙近中央引入杂质能级,使得MgH₂的H-Mg键键强减弱,有利于放氢.La在导带底引入杂质能级,降低带隙宽度,晶体中结合最弱的键断裂变得容易,也有利于放氢.Nb,Fe,Ti,V,La与近邻氢原子间形成共价键,形成金属氢化物,对释氢起到催化作用.La与H间的共价作用较弱,其金属氢化物的催化作用相对较弱.掺杂元素使Mg与周围H的静电作用力不对称,与Mg作用力小的H容易释放出来,起到提高MgH₂释氢的作用.比较发现V,Fe明显降低Mg-H间的离子键强度.     

元素替代对LiNH2储氢材料释氢能力影响的第一性原理研究

采用第一性原理赝势平面波方法,研究了元素替代对 LiNH₂释氢能力影响及作用机理.计算给出了结合能、电子态密度、电荷布居,分析了结构的稳定性和原子间的成键情况.结果表明：金属Ca,Na,Al替代LiNH₂部分Li时,可以使N—H键有所减弱.Mg,Al同时替代Li时,效果最好.在Li（Mg）NH₂中,非金属元素B,C,P替代N时,C的效果最好.预测Mg,Al,C共同替代时,会得到的一种较低释氢温度的储氢材料. 关键词： 2储氢材料')" href="#">LiNH₂储氢材料 密度泛函理论 元素替代行为 释氢能力     

NH3分子在LiH（100）表面吸附的第一性原理研究

采用第一性原理方法研究了NH₃分子在LiH（100）晶面的表面吸附情况.通过研究LiH（100）/NH₃体系的吸附位置、吸附能和电子结构,发现NH₃分子在LiH（100）晶面主要是化学吸附,初始位置为NH₃分子中N-H键在Li顶住时失去一个H原子,并在LiH（100）面形成NH₂基,其吸附能为0.511 eV,属于强化学吸附,吸附作用最强.此时NH₂基与附近H原子和Li原子之间为离子键作用,NH₂基中N—H键为共价键;NH₃分子中另一个H原子与LiH表面的一个H原子形成一个H₂分子逸出表面.H₂分子中H-H键为明显的共价键.     

H掺杂α-Fe2O3的第一性原理研究

α-Fe₂O₃是一种重要的磁性半导体材料, 在电子器件中应用广泛, 具有重要的研究意义. 本文基于密度泛函理论, 采用GGA+U方法, 应用第一性原理对间隙H掺杂前后的六方相α-Fe₂O₃的晶格常数、态密度、Bader 电荷分布进行了计算分析. 研究了U值对结果的影响, 发现U=6 eV时, 体相α-Fe₂O₃的晶胞平衡体积、Fe原子磁矩、带隙值与实验值最符合. 在选取合适U值后, 第一性原理计算结果表明, H掺杂后, 间隙H部分被氧化, 其最近邻的Fe 和O部分被还原, H和O有一定程度的成键. 在费米面附近, 出现了新的杂化能级, 杂化能级扩展了价带顶的宽度, 同时导带底下移, 引起带隙减小, 表明H掺杂是一种有效的能带结构调控方法.     

第一性原理研究Hf对ZrCoH3放氢的影响

过渡金属元素Hf被设计成通过占据Co原子、Zr原子和间隙位点来添加到ZrCoH₃中.通过第一性原理计算研究了Hf对ZrCoH₃放氢的影响.发现用Hf掺杂会使ZrCoH₃不稳定，导致氢离解能(E_d)、Co-H平均单位键长的键序(SBO_Co-H)降低，顺序为Zr₁₆Co₁₆H₄₈> Zr₁₆Co₁₆HfH₄₈> Zr₁₆Co₁₅HfH₄₈> Zr₁₅Co₁₆HfH₄₈.理论研究表明在ZrCoH₃-Hf体系中，较弱的Co-H共价键相互作用、金属特性和Hf-H键的形成都有利于提高ZrCoH₃的放氢能力. Hf原子优先占据间隙位，但这对氢离解能影响很小，氢离解能与位置...     

单原子催化剂Ir1/MoS2表面上的NH3吸附与直接分解的第一性原理

NH₃的催化分解一直是制备高纯度氢的有效途径之一,因此具有良好的催化活性的贵金属被广泛的应用于催化解离的研究中.然而,由于纯金属催化剂的利用效率低,增加催化成本.最近的研究发现单原子催化剂Ir₁/MoS₂以其突出的优势被认为是一种潜在的能替代现有贵金属催化剂的材料.本文采用密度泛函理论与周期性平板模型相结合的方法,研究了NH₃在单原子催化剂Ir₁/MoS₂上的吸附与活化.结果表明:NH₃的优势吸附位为Ir原子的顶位,构型为倾斜结构(atop),NH₃与体系表面的金属Ir成键,吸附能达到1.63 eV,是化学吸附;进一步分析了NH₃直接催化分解的反应路径,给出了相应的反应热、活化能,结果显示NH₃在atop位的解离比脱附有利,第一步脱氢反应活化能最小,N-H键易断裂,第二步反应能垒较高,此步为整个反应的决速步.     

钆、氟掺杂二氧化钒的晶体结构演变行为与相变机理

二氧化钒(VO₂)是一种热致相变材料，其过高的相变温度制约了其潜在应用.元素掺杂能够使VO₂的能带结构、态密度、键长和晶胞体积等晶格参数改变，引起其相变行为的变化.借助Materials Studio软件，基于第一性原理和分子轨道理论研究了钆、氟掺杂二氧化钒的晶体结构演变行为与相变机理.结果表明，无论F掺杂于VO₂(M型)中间O的位置还是两侧O位置，都会引起O—O键收缩，V—V键增长，β角增大，体系亥姆霍自由能增加，带隙相对减小，F侧位掺杂效果最好，随着V⁴⁺—V⁴⁺同极结合的减少，在1 at%F掺杂时相变温度达到最低；当Gd以0-1.8 at%掺杂于VO₂(M)中V位置时，O—O键和V—V键发生收缩，β角减小，亥姆霍自能增加，带隙减小，Gd 4f态与t_Ⅱ轨道重合，使相变能垒变低，相变温度显著降低.钆、氟两种元素掺杂VO₂相变机理更符合Peierls-Mott协同相变.     

密度泛函理论研究硫族元素取代对单层Ag2S结构和电子性质的影响

本文利用第一性原理计算讨论了硫族元素掺杂单层Ag₂S的缺陷形成能和电子性质.缺陷形成能反映了在富Ag条件下的掺杂更容易.计算得到的带隙、Mulliken布居和态密度展示出了其相应结构的电子性质.与纯单层的Ag₂S相比,Se/Te掺杂Ag₂S后的带隙显示出其电导率变化不大.基于Mulliken原子和键布居,研究了硫族元素掺杂后Ag₂S中的共价性.此外,通过讨论态密度,分析了能级的移动和电子的贡献.     

PECVD a-SiNx:H薄膜中的氢分布

用红外光谱、质子核磁共振谱对以SiH₄/NH₃/N₂混合气体为源、用等离子体增强化学气相淀积法淀积的非晶氢化氮化硅(a-SiNx:H)薄膜进行了分析,结果表明膜中H以Si-H和N-H形式存在,均呈集聚和疏散两种分布状态,衬底温度影响氢的总量和分布均匀性,射频功率显著影响[N-H]/[Si-H],退火后氢仍呈集聚和疏散两种分布.     

Theoretical study on the reactions of CH3NHNH2 with ground state O(3P) atom and excited state O(1D) atom

The reaction mechanisms of methylhydrazine (CH₃NHNH₂) with O(³P) and O(¹D) atoms have been explored theoretically at the MPW1K/6-311+G(d,p), MP2/6-311+G(d,p), MCG3-MPWPW91 (single-point), and CCSD(T)/cc-pVTZ (single-point) levels. The triplet potential energy surface for the reaction of CH₃NHNH₂ with O(³P) includes seven stable isomers and eight transition states. When the O(³P) atom approaches CH₃NHNH₂, the heavy atoms, namely N and C atoms, are the favourable combining points. O(³P) atom attacking the middle-N atom in CH₃NHNH₂ results in the formation of an energy-rich isomer (CH₃NHONH₂) followed by migration of O(³P) atom from middle-N atom to middle-H atom leading to the product P6 (CH₃NNH₂+OH), which is one of the most favourable routes. The estimated major product CH₃NNH₂ is consistent with the experimental measurements. Reaction of O(¹D) + CH₃NHNH₂ presents different features as compared with O(³P) + CH₃NHNH₂. O(¹D) atom will first insert into C–H2, N1–H4, and N2–H5 bonds barrierlessly to form the three adducts, respectively. There are two most favourable paths for O(¹D) + CH₃NHNH₂. One is that the C–N bond cleavage accompanied by a concerted H shift from O atom to N atom (mid-N) leads to the product P_I (CH₂O + NH₂NH₂), and the other is that the N–N bond rupture along with a concerted H shift from O to N (end-N) forms P_IV (CH₃NH₂ + HNO). The similarities and discrepancies between two reactions are discussed.     

The role of vacancy,impurity,impurity-vacancy complex in the kinetics of LiNH2 complex hydrides:a first-principles study

This paper studies first-principles plane-wave pseudopotential based on density functional theory of hydrogen vacancy,metal impurity,impurity-vacancy complex in LiNH 2,a promising material for hydrogen storage.It finds easy formation of H vacancy in the form of impurity-vacancy complex,and the rate-limiting step to the H diffusion.Based on the analysis of the density of states,it finds that the improvement of the dehydrogenating kinetics of LiNH 2 by Ti catalysts and Mg substitution is due to the weak bonding of N-H and the new system metal-like,which makes H atom diffuse easily.The mulliken overlap population analysis shows that H vacancy leads to the H local diffusion,whereas impurity-vacancy complexes result from H nonlocal diffusion,which plays a dominant role in the process of dehydrogenation reaction of LiNH 2.     

［Mg(NH2)2］n(n=1—5)团簇的密度泛函理论研究

用密度泛函理论的杂化密度泛函B3LYP方法在6-31G^*基组水平上对［Mg(NH₂)₂］_n(n=1—5)团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构.对最稳定结构的振动特性、成键特性、电荷特性等进行了理论研究.结果表明：团簇易形成链状结构,Mg—N键长为0.190—0.234 nm,N—H键长为0.101—0.103 nm,H—N—H键角为100.2°—107.5°;团簇中M 关键词： 2)₂］_n(n=1—5)团簇')" href="#">［Mg(NH₂)₂］_n(n=1—5)团簇 密度泛函理论 结构与性质 储氢材料     

Crystal structure analysis of novel complex hydrides formed by the combination of LiBH4 and LiNH2

Combination of LiBH₄ and LiNH₂ by ball milling forms the series of novel complex hydrides Li₂BNH₆, Li₃BN₂H₈ and Li₄BN₃H₁₀, depending on the combination ratios. The crystal structure of Li₄BN₃H₁₀ analyzed by synchrotron X-raydiffraction measurements is determined to be a cubic system (space group: I2₁3) with the lattice constant of a=10.673(2)Å. It should be emphasized that Li₄BN₃H₁₀ is an ionic crystal which is composed of a lithium cation Li⁺ and two different kinds of the complex anion [BH₄]^- and [NH₂]^-. These anions are located in the vertex and face-center of the cubic sub-lattice, and the lithium cation Li⁺ in the interstitial site between the anions, respectively. The other series of complex hydrides, Li₂BNH₆ and Li₃BN₂H₈, are also predicted to possess similar structures composed of a lithium cation Li⁺ and two different kinds of the complex anion [BH₄]^- and [NH₂]^-.     

Theoretical study of cisplatin adsorption on silica

The adsorption of cisplatin and its complexes, cis-[PtCl(NH₃)₂]⁺ and cis-[Pt(NH₃)₂]²⁺, on a SiO₂(1 1 1) hydrated surface has been studied by the Atom Superposition and Electron Delocalization method. The adiabatic energy curves for the adsorption of the drug and its products on the delivery system were considered. The electronic structure and bonding analysis were also performed. The molecule-surface interactions are formed at expenses of the OH surface bonds. The more important interactions are the Cl-H bond for cis-[PtCl₂(NH₃)₂] and cis-[PtCl(NH₃)₂]⁺ adsorptions, and the Pt-O interaction for cis-[Pt(NH₃)₂]²⁺ adsorption. The Cl p orbitals and Pt s, p y d orbitals of the molecule and its complexes, and the s H orbital and, the s and p orbitals of the O atoms of the hydrated surface are the main contribution to the surface bonds.     

Topological analysis of charge density in heptasulfur imide (S7NH) from isolated molecule to solid

Intra and intermolecular interactions of heptasulfur imide (S₇NH) are investigated in terms of topological properties analyses, such analyses are applied to both experimental (multipole model) and theoretically calculated (DFT and PDFT calculations) charge densities of the isolated molecule and of the crystal. The same analyses are also applied to a multipole model density obtained from theoretically (PDFT) derived structural amplitudes. The covalent bond character of S-N, N-H and S-S bonds are well described in terms of density, ρ_b, and total energy density, H_b, at the bond critical point r_c, though it is clear that the S-S bonds are weaker shared interactions than those of N-H and S-N bonds. Lone pair electron regions of sulfur and nitrogen atoms are revealed as the local charge concentration site from the Laplacian of charge density. The even weaker intermolecular interactions are well characterized; these include the N-H?S hydrogen bonding, N?S binding interactions and S?S binding interactions. All these intermolecular binding interactions are closed-shell interactions. The Laplacian of charge density demonstrates a directional intermolecular binding interaction. The corresponding intermolecular binding energies are derived by MP2/6-311+G(d,p) calculations. Atomic graph of each atom of the molecule is described in detail by the vertices, edges and faces of the polyhedron around the nucleus to illustrate such directional interactions.     

PbWO4晶体中的填隙氧及其对晶体光学性质的影响

运用GULP计算软件模拟计算了PbWO₄(PWO)晶体中不同位置的填隙氧原子点缺陷的生成能，计算结果表明：当填隙氧原子存在于(WO₄)^2-的周围时，填隙氧原子点缺陷的生成能最低；进一步运用基于密度泛函理论的全数值自洽DV-Xα方法计算了包含填隙氧原子的PWO晶体的态密度，计算结果表明：当填隙氧处在(WO₄)^2-的周围时，容易与(WO₄)^2-上的一个或两个氧离子相互作用形成分子离子O₂^2-或O₃^4-，通过分析这些计算结果，认为PWO晶体中350 nm吸收带的出现很可能与晶体中的氧分子离子有关.     

High-purity F atom beam source

Fluorine atoms are generated by 2.45 GHz microwave dissociation of 99.99% F₂ in a synthetic sapphire single-crystal discharge tube. Typical F₂ gas flow and beam intensity are: 0.1 mbar ls^?1 and 9.5×10¹⁷ atoms sterad^?1 s^?1. The measured degree of dissociation into atoms isD>98%. The high total F atom flux together with the purity of the beam seem to make the source a very promising device for both reaction kinetic-and molecular beam-experiments     

Modeling of CN-functionalized silica as vehicle for delivery of the chemotherapeutic agent: cisplatin

The adsorption of cisplatin and its complexes, cis-[PtCl(NH₃)₂]⁺ and cis-[Pt(NH₃)₂]²⁺, on a CN-functionalized SiO₂(111) surface has been studied by the atom superposition and electron delocalization method. The adiabatic energy curves for the adsorption of the drug and its complexes on the delivery system were considered. Electronic structure and bonding analyses were also performed. The molecules are adsorbed on the functionalized surface resulting in a major absorption of the cis-[Pt(NH₃)₂]²⁺ complex. The molecule?Csurface interactions are strengthened due to the incorporation of the CN silane group. The most important bonds occur through Pt?CC, Pt?CN and Pt?CSi interactions. Despite the new interactions, the functionalized carrier maintains its matrix properties after adsorption. The remarkable properties may be attributed to the small electronic structure changes in the Si?CCN groups caused by the interaction with neighboring cisplatin molecules and the enhancement in Pt-bonding interactions due to the surface incorporation of the CN silane groups.     

Self-interstitial configuration in molybdenum studied by modified analytical embedded atom method

The stability of various atomic configurations containing a self-interstitial atom (SIA) in a model representing Mo has been investigated using the modified analytical embedded atom method (MAEAM). The lattice relaxations are treated with the molecular dynamics (MD) simulation at absolute zero of temperature. Six relatively stable self-interstitial configurations and formation energies have been described and calculated. The results indicate that the [111] dumbbell interstitial S₁₁₁ has the lowest formation energy, and in ascending order, the sequence of the configurations is predicted to be S₁₁₁, C, S₁₁₀, T, S₀₀₁ and O. From relaxed displacement field up to the fifth-NN atoms of six configurations, we know that the relaxed displacements depend not only on separation distances of the NN atoms from the defect centre but also strongly on the direction of the connected line between the NN atoms and the defect centre. The equilibrium distances between two nearest atoms in the core of the S₁₁₁, C, S₁₁₀, T, S₀₀₁ and O configurations are 0.72a, 0.72a, 0.71a, 0.72a, 0.70a and 0.70a, respectively.