不同气氛下SiOx纳米线的制备及形貌、红外、光致发光研究

以N2/H2、N2或NH3为载气,利用碳辅助化学气相沉积法,常压1140℃下在石英衬底上制备了大量直径为20-300 nm,长数百微米的非晶SiOx纳米线.制备得到的纳米线具有高度定向生长的特性.利用透射电子显微镜、扫描电子显微镜及电子能谱对SiOx纳米线的形貌及组分进行了分析,Si与O原子之比为1∶1.8.傅里叶红外吸收谱显示了非晶氧化硅的三个特征峰(482,806和1095 cm-1)及1132 cm-1无序氧化硅结构的强吸收峰.SiOx纳米线光致发光光谱(PL)在440 nm(2.83 eV)处具有较强的荧光峰;N2为载气生长的SiOx纳米线的PL峰强比NH3为载气生长的SiOx纳米线峰强大四个数量级.     

红外吸收光谱法研究磁控溅射沉积SiOx非晶薄膜的过程

利用磁控溅射技术,在单晶Si衬底上生长了SiOx非晶薄膜.傅里叶变换红外吸收光谱(FTIR)显示,SiOx非晶薄膜存在3个吸收谱带.研究发现,随着溅射功率的提高,薄膜中先后形成Si-Oy-Si4-y(0＜y≤4),Si6环以及无桥氧空位中心(NBOHC)缺陷等结构,这几种结构对应的Si-O-Si键的伸缩振动吸收、非对称伸缩振动吸收以及O-Si-O键的振动吸收是导致薄膜的FTIR光谱出现3个吸收谱带的根本原因.     

化学镀制备镍纳米线/管阵列铂钯催化剂载体

以阳极氧化铝作为模板,用化学镀的方法制备了可以用作铂钯复合催化剂载体的镍纳米线和纳米管阵列,利用置换反应将铂钯复合催化剂沉积在镍纳米阵列材料上．SEM图片表明镍纳米线的平均直径 为100 nm,镍纳米管的平均内径为20 nm． EDS扫描的结果表明铂钯元素均匀地分布在阵列材料上．循环伏安研究发现载有铂钯催化剂的镍纳米管阵列对乙醇氧化的电催化活性明显高于载有铂钯催化剂的镍纳米线阵列．     

ECR-CVD制备的非晶SiOxNy薄膜的光致蓝光发射

使用90%N2稀释的SiH4与O2作为前驱气体，利用微波电子回旋共振等离子体化学气相沉积（ECR CVD）方法制备了非晶氮氧化硅薄膜（a-SiOxNy）.红外吸收光谱的结果表明，a SiOxNy薄膜主要由Si O Si和Si N键的两相结构组成，在存在氧流量的情形下，薄膜主要成分是SiOx相，而在无氧流量的情形下，薄膜则主要是SiNx相.使用565eV的紫外光激发，发现SiOxNy薄膜出现了位于460nm的光致蓝光主峰，且其发光强度随着氧流量的降低而显著增强.根据缺陷态发光中心和SiNx蓝光发射能隙态模 关键词： ECR CVD 红外吸收光谱 非晶氮化硅薄膜 光致发光     

掺铒纳米晶硅和掺铒非晶纳米硅薄膜的发光性质

采用等离子体增强化学气相沉积（PECVD）方法制备含有纳米晶硅的SiO2（NCSO）和含有非晶纳米硅颗粒的氢化非晶氧化硅（a—SiOx：H）薄膜。采用离子注入和高温退火方法将稀土Er掺入含有纳米晶硅（ncSi）和非晶纳米硅（a—n—Si）颗粒的基体中。利用IFS／20HR傅里叶变换红外光谱仪和微区拉曼散射光谱仪研究含有纳米晶硅和非晶纳米硅颗粒的薄膜掺稀土前后的发光特性。结果表明来自Be-Si在800nm的发光强度比来自a—SiOx：H基体中非晶纳米硅的发光强度高近一个数量级,而来自a-SiOx：H在1．54μm的发光强度比NCSO高4倍。还研究了掺铒a-SiOx：H薄膜中Si颗粒和Er^3＋的发光强度随退火温度的变化,结合掺铒纳米晶硅和非晶纳米硅薄膜发光强度随Er掺杂浓度变化和Raman散射等的测量结果,进一步明确指出a-Si颗粒在Er^3＋的激发中可以起到和nc-Si同样的作用,即作为光吸收介质和敏化剂的作用。     

双金属/TiO2纳米管复合结构中增强的光电流

将传统半导体材料与金属微纳结构相结合,利用其表面等离激元共振效应,可有效地增强复合结构的光电转换效率,使其广泛地被用于光电化学和光电探测等领域.本文以氧化铝纳米管为模板,采用原子层沉积技术制备出高有序的TiO2纳米管,并通过电子束热蒸发技术在大孔径的纳米管薄膜中分别负载金、铝和双金属金/铝纳米颗粒,形成金属纳米颗粒/TiO2纳米管复合结构.研究结果表明,相对于纯TiO2纳米管,Au/TiO2复合纳米管在568 nm的可见光照射下,其光电流密度约有400%的提高;在365 nm紫外光照射下,Al/TiO2复合纳米管的光电流提高约50%;同时负载双金属Au和Al纳米颗粒的TiO2纳米管在整个紫外-可见光区域光电流均显著增强.     

飞秒脉冲激光辐照下硅表面光致荧光特性(英文)

采用钛宝石飞秒脉冲激光对单晶硅在空气中进行辐照,研究了硅表面在不同扫描速度和能量密度下的光致荧光特性。光致荧光谱(PL)测量表明,在样品没有退火处理的情况下,激光扫描区域观察到橙色荧光峰(603nm)和红色荧光带(680nm附近)。扫描电子显微镜(SEM)测量显示,在飞秒脉冲激光辐照硅样品的过程中硅表面沉积了大量的纳米颗粒。利用傅里叶变换红外光谱仪(FT-IR)检测到了低值氧化物SiOx(x2)的存在,并且结合能谱仪(EDS)检测结果发现氧元素在光致发光中起着重要作用。研究表明:603nm处橙色荧光峰来自微构造硅表面低值氧化物SiOx,680nm附近红色荧光带来自量子限制效应。同时样品表面硅纳米颗粒的尺寸和氧元素的浓度分别决定了红色荧光带和橙色荧光的强度,通过调节飞秒激光脉冲的扫描速度和能量密度,可以有效地控制样品的荧光强度。     

毛刺状竹节结构氮化硼纳米管的合成与生长机理

以非晶硼和氧化镍纳米颗粒为原料,在氨气中1100 oC下合成了毛刺状竹节结构的氮化硼纳米管. 利用X射线衍射和透射电镜研究了氮化硼纳米管的结构和形貌. 竹节结构纳米管表面的毛刺是六方氮化硼的纳米薄片. 提出了一种基于固态硼和气态二氧化硼扩散的毛刺形貌生长机理.     

金属纳米薄膜在石墨基底表面的动力学演化

采用分子动力学方法研究了金属Au和Pt纳米薄膜在石墨(烯)基底表面的动力学演化过程,探讨了金属薄膜和石墨(烯)基底间的相互作用对金属纳米薄膜在固态基底表面的去湿以及脱附的动力学演化的影响.研究结果表明,在高温下,相同层数的Au和Pt纳米薄膜在单层石墨基底表面上存在不同的去湿现象,主要表现为厚度较小的Pt纳米薄膜在去湿过程中有纳米空洞形成,而同样厚度的Au薄膜在去湿过程中没有形成空洞.Au和Pt两种金属薄膜在高温下都去湿形成纳米液滴,这些液滴最终都以一定的速度脱离基底.在模拟的薄膜厚度范围内(0.2—2.3 nm),Au和Pt纳米液滴脱离基底的速度随厚度增加表现出不同的变化规律.Pt纳米液滴的脱离速度随薄膜初始厚度的增加先增加后减少,而Au脱离速度随厚度的增加先减少,达到一个临界厚度后脱离速度突然迅速增加.利用薄膜与基底间相互作用的不同导致去湿过程中的黏滞耗散不同,定性分析了这种变化规律的原因.此外,进一步研究还发现金属液滴的脱离时间与薄膜厚度和模拟温度的依赖关系,发现脱离时间随薄膜厚度的增加而增加,随模拟温度的升高而减小.这些研究结果可以为金属镀膜、浮选、表面清洁、器件表面去湿等工业生产过程提供理论指导.     

飞秒脉冲激光辐照对硅发光性能的影响

利用飞秒脉冲激光对单晶硅进行辐照,研究了在不同环境(纯水和空气)和能量密度条件下激光刻蚀过后硅片的光致荧光特性.对于辐照后的硅片,利用了场发射扫描电子显微镜(FESEM)、能谱仪(EDS)、傅里叶红外光谱仪(FT-IR)、光致荧光光谱仪(PL)进行表征.结果显示:在空气中样品表面形成了条纹状微结构,纯水中硅片表面生成了尺寸更小的珊瑚状微结构;激光刻蚀后在硅片表面的生成物主要是SiOx(x2),在纯水中处理后硅片氧元素的含量接近是空气中的4倍;傅里叶变换红外透射谱中主要为Si—Si键(610 cm-1)和Si—O—Si键(1105 cm-1)的振动;在空气和纯水中激发出的荧光均为蓝光(420—470 nm),在各自最佳激发波长下,纯水中荧光强度比空气中强2到3倍,但是在可见光范围内荧光峰的位置和形状都基本没有发生变化.研究表明:氧元素在光致发光增强上起着重要作用,光致发光最主要是由形成的氧缺陷SiOx(x2)导致的,生成低值氧化物SiOx的多少决定了发光的强弱.     

532 nm纳秒激光辐照下的单晶硅表面微结构及荧光特性

采用Nd:YAG纳秒脉冲激光对单晶硅在空气中进行辐照,研究了表面微结构在不同能量密度和扫描速度下的演化情况。扫描电子显微镜测量表明,激光在相对较低能量密度下辐照硅表面诱导出鱼鳞状波纹结构,激光能量密度相对较大时,诱导出絮状多孔的不规则微结构。光致荧光谱（PL）表明,激光扫描区域在710 nm附近有荧光发射。用氢氟酸腐蚀掉样品表面的SiOx后,荧光峰的强度显著降低,说明SiOx在光致发光增强上起重要作用。能量色散X射线谱（EDS）表明氧元素的含量随激光能量密度的增大而增加。研究表明:纳秒激光的能量密度和扫描速度对微结构形成起着决定性作用,改变了硅材料表面微结构尺寸,增大了光吸收面积; 氧元素在光致发光增强上起重要作用,微构造硅和SiOx对光致荧光的发射都有贡献。     

Unusual freezing and melting of gallium encapsulated in carbon nanotubes

The freezing and melting behavior of gallium (Ga) encapsulated in carbon nanotubes was investigated through in situ observation in a transmission electron microscope. It is shown that Ga remains liquid up to -80 degrees C when encapsulated in carbon nanotubes. Results of detailed electron diffraction analysis show that the encapsulated Ga can crystallize in either beta phase or gamma phase rather than the common alpha phase upon freezing. Both beta-Ga and gamma-Ga melt at around -20 degrees C. While this is very close to the melting point of bulk beta-Ga (-16 degrees C), it is considerably higher than that of bulk gamma-Ga (-35.6 degrees C). It was observed that upon solidification, Ga has its unique crystallographic orientation relative to the host carbon nanotube.     

碳纳米管包裹的硅纳米线复合结构的热稳定性研究

采用经典分子动力学方法模拟一定直径[111]晶向的硅纳米线填充不同扶手椅型单壁碳纳米管复合结构的加热过程, 通过可视化和能量分析的方法判断复合结构中硅纳米线和碳纳米管的热稳定性. 通过讨论碳纳米管的空间限制作用和分子间相互作用力的关系, 对碳纳米管和硅纳米线的热稳定性变化进行初步解释. 研究发现碳纳米管中硅纳米线的热稳定性和碳纳米管的直径关系密切: 当管径较小时, 硅纳米线的热稳定性有所提高, 当管径增大到一定大小时, 硅纳米线的热稳定性会突然显著地下降, 直到硅纳米线与管壁不存在分子间相互作用力, 硅纳米线的热稳定性才会恢复. 而硅纳米线填充到碳纳米管中对碳纳米管的热稳定性有着明显的降低作用.     

Si基GaN外延层光致发光光谱与二次离子质谱的研究

报道了在Si基上用简便的真空反应法制备出GaN外延层．光致发光光谱测试结果表明不同的生长温度和退火工艺会对GaN外延层的发光特性产生影响,在1050℃下生长的GaN外延层的发光强度高于其他温度下生长的发光强度,退火可以使GaN外延层的发光强度增强．二次离子质谱(SIMS)测试结果表明外延层中Ga和N分布均匀,在表面处Ga发生了偏聚,同时外延层中还存在Si,O等杂质,这使得外延层中背景电子浓度高达1.7×10¹⁸/cm³. SIMS测试结果还表明,在外延生长前采用 关键词：     

热丝和射频等离子体化学气相沉积法制备定向碳纳米管薄膜

采用热丝和射频等离子体复合化学气相沉积设备(PE-HF-CVD),以CH4、H2和N2为反应气体.在较低衬底温度下(500℃),用简单的催化剂制备方法--旋涂法在硅片上涂覆Ni(NO3)2溶液,经热处理及H2还原后的Ni颗粒为催化剂,在硅衬底上制备出了垂直于硅片且定向生长的碳纳米管薄膜.扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果显示,1 mol/l的硝酸镍溶液旋涂硅片所得催化剂制得的碳纳米管管径为30～50 nm,长度超过4μm,定向性好.并用拉曼光谱(Raman)对不同摩尔浓度Ni(NO3)2溶液条件下制备的碳纳米管薄膜样品进行了表征.     

Formation of Gallium-induced nanostructures on single crystal HOPG surface

The room temperature growth of gallium atoms on the highly oriented pyrolytic graphite (HOPG) surface has been performed. The gallium atoms were deposited by thermal evaporation method in an ultra high vacuum system at a base pressure 5 × 10⁻¹⁰ torr. The X-ray photo electron spectroscopy (XPS) studies had been performed to confirm the presence of gallium atoms on HOPG surface. Scanning tunneling spectroscopy (STM) technique was employed to study the surface morphology of the clean HOPG surface and gallium covered HOPG surfaces which recognize the formation of gallium induced nanostructures. The deconvoluted XPS core level spectra of C (1s) and Ga (3d) demonstrate the possible interaction between substrate and the adsorbate atoms. The STM analysis revealed that the gallium deposition on HOPG led to significant change in the surface morphology. It was observed that the Ga atoms adsorbed as layer structure on HOPG surface for low coverage while quasi one-dimensional chain like nanostructure (1 ± 0.2 nm) has been formed for higher Ga coverage. The nanostructured surfaces induced by Ga deposition are found to be stable and could be used as a template for the growth of metallic nanostructures.     

Diffusion slowdown in the nanostructured liquid Ga‐Sn alloy

The diffusion of gallium in liquid Ga‐Sn alloy embedded into different porous silica matrices was studied by NMR. Spin relaxation was measured for two gallium isotopes, ⁷¹Ga and ⁶⁹Ga, at two magnetic fields. Pronounced rise of quadrupole contribution to relaxation was observed for the nanostructured alloy which increased with decreasing the pore size. The correlation time of atomic mobility was evaluated and found to be much larger than in the relevant bulk melt which evidenced a pronounced diffusion slowdown in the Ga‐Sn alloy under nanoconfinement. It is shown that the diffusion was slower by a factor of 30 for the alloy within 7 nm pores. The spectral densities of electric field gradients at zero frequency were found to double for the finest pores. The Knight shift was found to decrease but slightly for the nanostructured alloy.     

Electron microscope vualization of muliphase fluids contained in closed carbon nanotubes

Aqueous multiphase fluids trapped in closed multiwall carbon nanotubes are visualized with high resolution using transmission electron microscopy (TEM). The hydrothermally synthesized nanotubes have inner diameter of 70 nm and wall thickness 20 nm, on average. The nanotubes are hydrophilic due to oxygen groups attached on their wall surfaces. Segregated liquid inclusions contained in the nanotubes under high pressure can be mobilized by heating. A resistive heating stage is utilized to heat a thin membrane inside a nanotube, causing the membrane to evaporate slowly and eventually pinch off. Focused electron beam heating is employed as a second means of thermal stimulation, which results in localized heating. With the latter method, gas/liquid interface motion is observed inside the thin channel of a carbon nanotube. Experiments like the ones presented herein may help understand the dynamics of fluids contained in nanoscale channels.     

Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties

In-doped Ga₂O₃ zigzag-shaped nanowires and undoped Ga₂O₃ nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In₂O₃ and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.     

Selective growth of carbon nantoubes on SiO2/Si substrate

Three-step raising temperature process was employed to fabricate carbon nanotubes by pyrolysis of ferrocene/melamine mixtures on silica and single crystalline silicon wafers respectively. Then the morphologies, structures and compositions of obtained carbon nanotubes are investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscope (EDX) and electron energy-loss spectroscopy (EELS). TEM and SEM observation shows that on silica substrate, high-oriented carbon nanotube can grow compactly to form continuous film on both frontal and cross-section surfaces, but on silicon substrate, only can form on cross-section surface. These carbon nanotubes have much irregular cup-like structure, and with outer diameter varying from 25 nm to 35 nm. At the top end of carbon nanotube there is a catalyst particle. EDX analysis reveals that the particle are iron cluster, and EELS spectrum indicates that the nanotube is composed of pure carbon. Finally, the effect of substrate surface roughness on the growth behavior of carbon nanotubes has been discussed.