快速电信号的外电光采样测量系统

建立了小型适用的外电光采样系统,利用增益开关半导体激光器产生的皮秒超短光脉冲做为取样门,以LiTaO₃电光探头作为电场传感器,实现了对梳状波电脉冲波形的光学采样测量,测量结果与用采样示波器测量的结果相符.分析了系统的主要性能,获得了25ps的时间分辨率及20mV/√Hz的电压灵敏度.实验分析了电光探头对系统测量精度的影响.同时用该系统测量了共面微带传输线的传输特性.     

一种实验确定微电子器件灵敏体积的方法

介绍一种实验确定微电子器件单粒子翻转(SEU)灵敏体积(S_V)厚度d的方法.用从低到高不同能量的重离子辐照微电子器件, 测量其SEU截面随离子射程的变化曲线σ_seu(r), 用数学计算从σ_seu(r)和LET(r)函数提取d. 利用测得的d和σ_seu(LET), 经过模型计算可得到更精确的空间SEU率的预言值.     

微通道板空间光调制器中电光调制的传递特性

本文利用折射率椭球和点电荷模型研究了MSLM中偏z轴斛切LiNbO₃晶体的介电,电光传递过程。导出了在纵向,横向电场同时存在时电光效应的表达式及调制区的电荷——电压传递函数解析式。讨论了横向电场和器件结构参数对输出的影响及优化设计问题。指出偏z轴30°～60°切割晶体都可得到较好结果。     

高功率InGaAs量子阱垂直腔面发射激光器的研制

采用AlAs氧化物限制工艺实验制备了衬底出光的高功率大出光窗口（直径为300 μm）InGaAs/GaAs量子阱垂直腔面发射半导体激光器,实现了器件室温准连续工作（脉冲宽度为50 μs,重复频率为1000 Hz）,并对器件的伏安特性、光输出特性、发射光谱,以及器件的远场发射特性等进行了实验测试.器件阈值电流为460mA,器件的最大光输出功率为100mW,发射波长为978.6nm, 光谱半功率全宽度为1.0 nm,远场发散角小于10°,垂直方向的发散角θ_⊥为8°,水平方向的发散角θ_∥为9°,基本为圆形对称光束.     

La0.67Sr0.33MnO3薄膜光响应特性研究

实验测量了在不同温度和电场下,超巨磁电阻CMR(colossal magnetoresistance)薄膜材料La_0.67Sr_0.33MnO₃(LSMO)的光响应特性.发现样品被激光照射后,具有光诱导电阻变化的特性.在温度小于居里点Tc时,电阻随温度升高而增大,在Tc以上时,电阻则随温度升高而减小.通过对样品的光脉冲响应和偏置电场的关系分析,可认为其光响应特性的机理与激光激励下引起的自旋系统变化有关.     

狭缝相机测量目标速度的精度分析

本文对狭缝相机测量目标速度的公式: V₀=(l/l′)V_F(1)V₀=tgφ·V_F/M(2)进行了分析;讨论了影响测量精度的因素。用X—70狭缝摄影机对目标进行了多次拍摄,得到了翔实的实验数据,并对数据进行了处理。根据(1)式计算的目标速度与速度的标定值作了比较;扫描拍摄时,根据(2)式计算的速度与自由落体运动的理论速度进行了比较。得出了XF—70狭缝相机作同步摄影时,其测量速度的相对精度达0.2%。用作扫描摄影时,其速度测量精度相对达0.8%的结论。     

Configuration of the valence neutrons of 17B

The reaction cross section of ¹⁷B on ¹²C target at (43.7±2.4)MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou (RIBLL). The root-mean-square matter radius (R_rms) was deduced to be (2.92±0.10)fm, while the R_rms of the core and the valence neutron distribution are 2.28fm and 5.98fm respectively. Assuming a ``core plus 2n' structure in ¹⁷B, the mixed configuration of (2s_1/2) and (1d_5/2) of the valence neutrons is studied and the     

栅漏间表面外延层对4H-SiC功率MESFET击穿 特性的改善机理与结构优化

本文提出了一种带栅漏间表面p型外延层的新型MESFET结构并整合了能精确描述4H-SiC MESFET工作机理的数值模型,模型综合考虑了高场载流子饱和、雪崩碰撞离化以及电场调制等效应. 利用所建模型分析了表面外延层对器件沟道表面电场分布的改善作用,并采用突变结近似法对p型外延层参数与器件输出电流(I_ds)和击穿电压(V_B)的关系进行了研究.结果表明,通过在常规MESFET漏端处引入新的电场峰来降低栅极边缘的强电场峰并在栅漏之间的沟道表面引入p-n结内建电场进一步降低电场峰值,改善了表面电场沿电流方向的分布.通过与常规结构以及场板结构SiC MESFET的特性对比表明,本文提出的结构可以明显改善SiC MESFET的功率特性.此外,针对文中给定的器件结构,获得了优化的设计方案,选择p型外延层厚度为0.12 μupm,掺杂浓度为5× 10¹⁵ cm^-3,可使器件的V_B提高33%而保持I_ds基本不变.     

Mechanism for Alternating Electric Fields Induced-Effects on Cytosolic Calcium

In this work, from the point of calcium ions in the cytosol, we extend a V_m-[Ca²⁺]_cyt model to explain the changes of action potential V_m of the plasma membrane and the calcium concentration in the cytosol [Ca²⁺]_cyt under an alternating electric field in cells. An alternating external electric field may exert an oscillating force to each of the free electrolytes, existing on both sides of the plasma membrane. The mechanism for the alternating electric field induced-effects on V_m and [Ca²⁺]_cyt is elucidated. The simulation results show a correlation between the changes of [Ca²⁺]_cyt and the alternating electric field. When the numerical ratio between the intensity E₀(mV/m) and the frequency υ (Hz) of the field was about 1-2, the [Ca²⁺]_cyt signal is changed dramatically. The bioactive changes of [Ca²⁺]_{_cyt} appear at low frequency, in the range of 0-100Hz.     

A result on certain coset subalgebras of the βγ-system

In this paper, for the highest weight module V₄ of sl(2,C) with the highest weight 4, we describe subalgebras S_β(V₄)^θ+ and S_γ(V₄)^θ+ of the βγ-system coset S(V₄)^θ+ by giving their generators. These coset subalgebras are interesting, new examples of strongly finitely generated vertex algebra.     

光波导振荡场传感器

针对消逝场传感器的不足,提出了一种传感介质处于波导芯层,且以超高阶导模为探针的光波导振荡场传感器.由于其波导芯层处于功率密度极高的振荡场区域,而超高阶导模又具有对芯层参数极为灵敏的性质,因此这种新型传感器的灵敏度大大增强.实现了超越消逝场传感器灵敏度极限值几个量级的位移传感器.     

Pulsed excitation of luminescence in dihydrated oxalic acid

Luminescence has been excited by an a.c. electric field in oxalic acid dihydrate at temperatures 273, 283 and 293 K. The voltage and frequency dependence of the emitted light flux has been studied. The brightness (B) has been observed to increase with voltage (V_rms) and frequency (v). The relation b = b₀ exp(-b/V^{$\text{1}\text{2}$_rms)} describes the voltage dependence of brightness quite accurately at frequencies greater than 500 Hz. The brightness wave forms at different voltages and frequencies of the applied field have also been studied. One primary and one secondary peak have been observed in each half cycle of the applied sinusoidal voltage.     

A TiO2 Film/K+ Ion-Exchanged Glass Composite Optical Waveguide and Its Application to a Refractive Index Sensor

A composite optical waveguide for biological and chemical sensors was successfully developed by sputtering a thin TiO₂ film onto the surface of a low loss potassium ion-exchanged optical waveguide. The electric field of the evanescent wave at the film surface was made strong through adiabatic transition of the guided light. The attenuation of the guided light was sufficiently small in the air, and the guided light intensity was changed sensitively with the refractive index of the cladding layer (n_c). Thus, n_c can be sensitively monitored with a detecting sensitivity of about 10^-4.     

Photonic Electric-Field Sensor Utilizing an Asymmetric Ti:LiNbO3 Mach–Zehnder Interferometer with a Dipole Antenna

Abstract

The use of an asymmetric Ti:LiNbO₃ Mach–Zehnder interferometer with a dipole antenna to measure an electric-field strength is described in this article. The device has a small size of 46 × 7 × 1 mm and operates at a wavelength of 1.3 μm. The AC output characteristics show the modulation depth of ~75% at V_π voltage of ~5.3 V. The minimum detectable electric fields are ~0.28 V/m and ~0.646 V/m, corresponding to a dynamic range of about ~32 dB and ~26 dB at frequencies 20 MHz and 50 MHz, respectively. The sensors exhibit an almost linear response for the applied electric-field intensity from 0.298 V/m to 29.84 V/m.     

Polarisation-insensitive strip-loaded waveguide for electro-optic modulators and switches

A polarisation-insensitive electro-optic (EO) waveguide consisting of a dye-doped TiO₂/SiO₂ slab and a SU-8 strip-loaded rib is designed and fabricated. By optimizing the refractive index and size of waveguide, a trade-off between polarisation-insensitive condition and large EO efficiency (optical field interaction with the EO material) is obtained. The average transmission loss of the waveguide is less than 2.0 dB/cm. A Mach-Zehnder (M-Z) interferometer intensity modulator based on this waveguide with excellent poling stability is fabricated and measured, exhibiting 7 V half-wave voltage with 1.8 cm EO interaction length and 2.7 cm total length. This strip-loaded structure is proved to be a valuable application in EO modulators and switches.     

Demonstration for a two-axis interferometric tilt sensor in KAGRA

Recently, a folded Mach–Zehnder interferometer with homodyne in- and quadrature-phase detection was proposed as a high-precision, wide-dynamic range tilt sensor. By way of a practical application and to validate actual performance, two-axis tilt sensors were developed and installed for one mirror of the input mode cleaner cavity in KAGRA, the large-scale cryogenic gravitational-wave telescope in Kamioka, Gifu, Japan. Building on previous work, we have demonstrated that the two-axis tilt sensor has properly sensed the tilt angle changes of the mirror motion with high precision and without calibration. Compared with our initial angular sensor, an optical lever, which is calibrated by using the interferometer tilt sensor, we found that both sensors showed actual tilt motions of the mirror at low frequencies, and the two-axis interferometer sensor has a better sensitivity at higher frequencies.     

A fiber-optic voltage sensor based on macrobending structure

We propose and demonstrate an optical voltage sensing scheme based on a macrobending optical fiber in a ratiometric power measurement system. This novel approach to sensing has not been utilized before and has the advantage that the sensor involves simple fabrication compared to existing fiber-optic voltage sensors. To prove the feasibility of such a fiber-optic sensor, a sensor for a voltage range from 0∼100 V is demonstrated, with a resolution of 0.5 V. The sensor is robust, linear, and shows a competitive measurement resolution. The sensor can be easily scaled to suit other voltage levels and be effectively combined with optical current sensors.     

主动相位偏置折叠型萨尼亚克光纤传感阵列时分复用技术

针对折叠结构萨尼亚克(Sagnac)光纤传感阵列存在噪声光与信号光混叠的问题,提出了一种主动相位偏置时分复用方案.在传统梯形结构传感阵列的基础上,通过调整总线光纤的长度关系和附加延迟光纤的方法,使噪声光和信号光依次交替返回而不会发生混叠.进一步分析表明,通过调整延迟光纤环的长度,可以使输入光脉冲的重复频率达到标准时分复用系统重复频率的二分之一.整个阵列的相位偏置由一个与输入光脉冲同步的相位调制信号驱动集成光学芯片实现.实验演示了一个两基元的传感阵列,最小时间间隔为331.25 ns,输入光脉冲重复频率可达754.727 kHz,在5 kHz处相位灵敏度为7.3μrad√(Hz),探头间串扰约为-51.75 dB.     

Experimental Investigation of Integrated Optical Intensive Impulse Electric Field Sensors

We design and fabricate an integrated optical electric field sensor with segmented electrode for intensive impulse electric field measurement. The integrated optical sensor is based on a Mach-Zehnder interferometer with segmented electrodes. The output/input character of the sensing system is analysed and measured. The maximal detectable electric field range （-75 kV/m to 245kV/m） is obtained by analysing the results. As a result, the integrated optics electric field sensing system is suitable for transient intensive electric field measurement investigation.     

Theory of absorption integrated optical sensor of gaseous materials

The eigen and noneigen (leaky) modes of a three-layer planar integrated optical waveguide are described. The dispersion relation of a three-layer planar waveguide and other dependences are derived, and the cutoff conditions are analyzed. The diagram of propagation constants of the guided and radiation modes of an irregular asymmetric three-layer waveguide and the dependence of the electric field amplitudes of radiation modes of substrate on vertical coordinate in a tantalum integrated optical waveguide are presented. The operating principles of an absorption integrated optical waveguide sensor are investigated. The dependences of sensitivity of an integrated optical waveguide sensor on the sensory cell length, the coupling efficiency of the laser radiation into the waveguide, the absorption cross-section of the studied material, and the level of additive statistical noise are investigated. Some of the prospective areas of application of integrated-optical waveguide sensors are outlined.